30.10.

2024 PHYSCIS GRADE 12

SEMICONDCTOR ASSIGNMENT 1
1. What are energy bands ? How are these formed ?

2. Draw the energy band diagram of an intrinsic semiconductor.

3. Draw the energy band diagram of p-type & n-type semiconductor

4. Name the two important processes that occur during the formation of a p-n
junction
5. Explain how the width of depletion region in a p-n junction diode change,
when the junction is- (i) forward biased (ii) reverse biased.
6. Distinguish between intrinsic and extrinsic semiconductors

7. Distinguish between n-type and a p-type semiconductor

8. In the following circuit diagram, is the junction diode forward biased or

reverse biased ? Explain.
(i)

(ii)

9. Two semiconductor materials X and Y shown in given figure are made by

doping germanium crystal with Indium and Arsenic respectively. The two
are joined end to end and connected to a battery as shown (i) Will the
junction be forward biased or reverse biased ? (ii) sketch V-I graph for this
arrangement

10. Two semiconductor materials A and B shown in given figure are made by
doping germanium crystal with Arsenic and Indium respectively. The two
are joined end to end and connected to a battery as shown. (i) Will the
 junction be forward biased or reverse biased ? (ii) sketch V-I graph for this
arrangement.

11. How are the V-I characteristics of a p-n junction diode made use of in
rectification?
12. What is p-n junction ? Explain briefly, with the help of suitable diagram,
how a p-n junction is formed. Define the term Potential barrier and
depletion region.
13. Distinguish between a conductor, an insulator and a semiconductor on the
basis of energy band diagrams.
14. What is meant by forward and reverse biasing of a p-n junction ? Draw
the circuit diagram of a forward and reverse biasing of a p-n junction.
15. Draw the circuit diagram for studying the V-I characteristics of a p-n
junction diode in (i) forward bias and (ii) reverse bias. Draw the typical V-I
characteristics of a silicon diode.
16. Explain with the help of a circuit diagram, the working of p-n junction
diode as half wave rectifier.
17. Draw a labeled circuit diagram of a junction diode as a full wave rectifier.
Explain its underlying principle and working. Depict the input and output
wave forms.
ASSIGNMENT 2
1. A strip of copper and another of germanium are cooled from room
temperature to 80K. The resistance of:
1) Each of these decreases
2) copper strip decreases and that of germanium decreases
3) copper strip decreases and that of germanium increases
4) Each of these increases
2. To a germanium sample, traces of gallium are added as an impurity. The
resultant sample would behave like :
1) A conductor 2) A p-type semiconductor
3) A n-type semiconductor 4) An insulator
3. Identify the property which is not characteristic for a semiconductor?
1) At a very low temperatures, it behaves like an insulator
2) At higher temperatures two types of charge carriers will cause conductivity
3) The charge carriers are electrons and holes in the valence band at higher
temperatures
4) The semiconductor is electrically neutral.
4. In semiconductors the forbidden energy gap between V.B. and C.B. is of
the order of
1) 1eV 2) 5eV 3) 1 keV 4) 1MeV
5. On increasing temperature, the conductivity of pure semiconductors
1) decreases 2) increases 3) remains unchanged 4) becomes zero
6. An n-type and p-type silicon can be obtained by doping pure silicon with
1) Arsenic and phosphrous 2) Indium and aluminium
3) Phosphorous and indium 4) aluminium and boron
7. In a n - type semiconductor , the fermi energy level lies
1) in the forbidden energy gap nearer to the conduction band.
2) in the forbidden energy gap nearer to the valence band.
3) in the middle of forbidden energy gap
4) outside the forbidden energy gap
8. The value indicated by fermi energy level in an intrinsic semiconductor is
1) the average energy of electrons and holes
2) the energy of electrons in conduction band
3) the energy of holes in valence band
4) the energy of forbidden region
9. To obtain n-type extrinsic semiconductor, the impurity element to be added
to germanium should be of valency
1) 2 2) 5 3) 4 4) 3
10. The majority carriers in a p-type semi-conductor are........
1) Electrons 2) Holes 3) Both 4) Impurities
11. The objective of adding impurities in the extrinsic semiconductor is
a. to increase the conductivity of the semiconductor
 b. to increase the density of total current carries
c. to increase the density of either holes or electrons but not both
d. to eliminate the electron -hole pairs produced in intrinsic semiconductor.
12. In intrinsic semiconductor conductivity is
a. low 2) average 3) high 4) very low
13. The potential barrier at PN junction is due to
a. fixed acceptor and donor ions on either side of the junction
b. minority carriers on either side of the junction
c. majority carriers on either side of the junction
d. both majority and minority carriers on either side of junction
14. A PN junction diode cannot be used
a. as rectifier
b. for converting light energy to electric energy
c. for getting light radiation
d. for increasing the amplitude of an ac signal
15. A full wave rectifier along with the output is shown in fig. the contributions
from the diode-D2 are

1) C 2) A,C 3) B, D 4) A,B,C,D
16. A full-wave rectifier is used to convert ‘n’ Hz a.c into d.c, then the number
of pulses per second present in the rectified voltage is.
a. n 2) n/2 3)2n 4)4n
17. If the input frequency of half-wave rectifier is n Hz ac, then its output is
a. a constant dc 2) n/2 Hz pulsating dc
3) n Hz pulsating dc 4) 2n Hz pulsating dc
18. The current through any p-n junction is due to
a) drift of charge carriers
b) diffusion of charge carriers
c) different concentrations of same type of charge carriers in different
regions
d) same concentrations of same type of charge carriers in different
regions
1) a,b and c 2) a and b only 3) only d 4) a,b,c,d
19. The thickness of depletion layer is approximately
a. 1m 2) 1mm 3) 1cm 4) 1m
20. The depletion region is
a. region of opposite charges
b. neutral region
c. region of infinite energy
d. region of free current carriers
21. The diffusion current in a p-n junction is greater than the drift current
when the junction is
a. forward biased
b. reverse biased
c. un biased
d. both forward and reverse biased
22. Diode is forward biased and the applied voltage is greater than the potential
barrier then
I) resistance of the junction in the forward bias decreases
II) potential barrier remains same
III) width barrier remains decreases
IV) p-type is at higher potential than the n-type
1) all are true 2)all are false
3) I,III,IV are true 4)I,II, III are true
23. When a junction diode is reverse biased, the current called drift current is
due to
a. majority charge carriers of both n&p sides
b. minority charge carriers of both n&p sides
 c. holes of both n &p sides
d. conduction band electrons of n-side only
24. Among the following one statement is not correct when a junction diode is
in forward bias
a. the width of depletion region decreases
b. free electron on n- side will move towards the junction
c. holes on p -side move towards the junction
d. electron on n- side and holes on p-side will move away from junction.
25. When a p-n junction diode is forward-biased, energy is released
at the junction due to the recombination of electrons and holes.
This energy is in
a. Visible region 2) Infrared region
3) UV region 4) X-ray region
26. Assertion : Semiconductors do not obey Ohm's law.
Reason : Electric current is determined by the rate of flow of charge carries
a. Both Assertion and Reason are true and Reason is the correct
explanation of Assertion
b. Both Assertion and Reason are true and Reason not the correct
explanation of Assertion
c. Assertion is true but Reason is false
d. Assertion is false but Reason is true
27. Assertion : Germanium is preferred over silicon
for making semiconductor devices.
Reason : Energy gap for Ge is more than that of Si.
28. Assertion : A p-n junction cannot be used at ultra high frequencies.
Reason : Capacitive reactance of a p-n junction increases
with increasing frequency.
29. Assertion: I-V characteristic of P-N junction diode is
same as that of any other conductor.
Reason: P-N junction diode behave as conductor at room temperature.
30. Assertion (A) : When a donor electronsis excited to the
conduction band no hole is created
Reason(R) : Donor energy level does not exist in valence band
NUMERICALS FOR PRACTICE
1. Find the voltage VAin the circuit shown in figure . The potential barrier for
Ge is 0.3 V and for Si is 0.7 V
2. A p-n diode is used in a half wave rectifier with a load resistance of 1000W .
If the forward resistance (rf ) of diode is10W ,calculate the efficiency of this
half wave rectifier.
3. Afull wave rectifier uses two diodes with a load resistance of 100W . Each
diode is having negligible forward resistance.Find the efficiency of this full
wave rectifier.
4. If a p-n junction diode, a square input signal of 10V is applied as shown
Then what will be the out put signal across RL

5. The electrical conductivity of a semi conductor increases when

electromagnetic radiation of wavelength shorter than 1240 nm is incident on
it. Then what is the forbidden band energy for the semi conductor (in eV)
6. A semiconductor is known to have an electron concentration of 5´1013 / cm3
and hole concentration of 8´1012 / cm3 . Then what is the nature of
semiconductor.
7. A potential barrier of 0.5V exists across a p-n junction. If the width of
depletion layer is 10-6m, then what is the intensity of electric field in this
region.
8. A p - n junction diode has breakdown voltage of 28V. If applied external
voltage in reverse bias is 40V then what is the current through it.
9. What is the value of current in the following diagrams is (diode assumed to
be ideal one)

10. A half -wave rectifier is used to convert 50Hz A.C. to D.C. voltage. Then what
are the number of pulses per second in the rectified voltage.
11. If a full wave rectifier circuit is operating from 50Hz mains, Then what is the
fundamental frequency in the ripple.
12. Motilities of electrons and holes in a sample of intrinsic germanium at room
temperature are 0.36m2 / Vs and 0.17m2 / Vs .The electron and hole densities
are each equal to 2.5 ´1019 m-3 .Then what is the electrical conductivity of
germanium.
13. In a p-n junction diode the thickness of depletion layer is 2 X10-6 m and
barrier potential is 0.3V. Then what is the intensity of the electrical field at the
junction.
14. A potential barrier V volts exists across a P-N junction. The thickness of the
depletion region is ‘d’. An electron with velocity 'v ' approaches P-N junction
from N-side. Then what is the velocity of the electron crossing the junction.
15. If V1> V2, r is resistance offered by diode in forward bias then what is the
current through the diode.

16. A cell of emf 4.5V is connected to a junction diode whose barrier potential is
0.7V. If the external resistance in the circuit is 190 ohm, then what is the
current in the circuit.