PC1 Lesson 4
PC1 Lesson 4
Bloch-Brilloin model
In a unidimensional approximation,
electrons in a solid experience a
E e– periodic potential due to the
positively charged atomic nuclei of
the crystal lattice. In Kronig-Penny’s
model, this situation is further
L
simplified by considering equidistant
+ + + + + potential wells of constant depth.
x
Solving the Schrödinger’s equation in
E this case yields:
allowed energy bands
!2
En = n2 ⋅
8m*e ⋅ L2
band gaps with n = ±1, ± 2, ...
me* is the electron effective mass, such
as it satisfies (within an allowed band)
de Broglie's relation :
p2 !2 ⋅ k 2
p E = =
2m*e 2m*e 47
Band theory
Energy bands can also be understood by
E considering mutual interactions of
N carbon atoms
4N states electronic wave functions of atoms
0 electron
constituting the solid. When a large
8N states
4N electrons number of atoms are brought together,
6N states (2p)
2N electrons
energy levels split, yielding many new
energy gap 2N states (2s) orbitals. The difference in energy between
2N electrons them becomes very small, so the levels may
cohesive energy
be considered as forming continuous bands
4N states
4N electron of energy. Some intervals of energy contain
C-C equilibrium distance (diamond) r no orbitals, no matter how many atoms are
aggregated, forming band gaps.
E cb conduction band
lowest empty or partially filled energy band
Ecb
Eg band gap
Evb band of forbidden energy
valence band
vb highest entirely occupied energy band
48
Electric conduction in solids
E cb cb cb
Eg Eg
vb vb vb
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Semiconductors
E cb cb cb
Eg < 3kBT
Eg Eg
vb vb vb
Semiconductors are insulators for which a Charge carriers can also be produced
conduction can however be obtained under by chemical doping of the solid.
some conditions. If Eg < 3 kBT, for instance, Donor impurities yield n-doping (ecb–
electrons can jump thermally across the band carriers). Acceptor impurities
gap and be promoted from the valence band produce holes in the valence band
to the conduction band. Both conduction (h vb + carriers) and p-doping. In
band electrons and valence band holes charge semiconductors, the density of charge
carriers contribute then to the conduction. carriers n is always rather small.
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Intrinsic light absorption
51
Band structure
p2 !2 ⋅ k 2
E = =
2m*e 2m*e
Gärtner's relations
direct transition: α ∝ hν − Eg
α
( )
2
indirect transition: α ∝ hν − Eg
α ∝ hν
2
α ∝ hν
λ ∝ 1 / hν
indirect transition:
absorption threshold
hν = Eg − E p
hν
Eg – Ep Eg Eg + Ep
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Excitonic absorption
cb
An exciton is an electron-hole pair in
which charge carriers are bound Ex
together by Coulombic interaction. The
Eg
exciton is a neutral entity which can hν = Eg – Ex
move easily in an insulator and carry
excitation energy.
vb
exciton absorption
α2 GaAs
α Exciton bond energy Ex [meV]
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m * ⋅ e2 m*
Ex = = ⋅ 13.6 [eV ]
2me ⋅ ε 2 ⋅ rH me ⋅ ε 2
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Quantum size effect
Quantum dots
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