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Electronics Engineering: (Model Examination)

This document contains a 57 question multiple choice exam on electronics engineering and transistor fundamentals. The questions cover topics such as transistor biasing, common transistor configurations (common emitter, base, collector), transistor parameters (alpha, beta, input and output impedance), and operating points on output characteristics curves. Correct answers are one of the multiple choice options a, b, c or d listed after each question.

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0% found this document useful (0 votes)
33 views10 pages

Electronics Engineering: (Model Examination)

This document contains a 57 question multiple choice exam on electronics engineering and transistor fundamentals. The questions cover topics such as transistor biasing, common transistor configurations (common emitter, base, collector), transistor parameters (alpha, beta, input and output impedance), and operating points on output characteristics curves. Correct answers are one of the multiple choice options a, b, c or d listed after each question.

Uploaded by

sampreethp
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ECE/AE/SUBR/INSP/019/04

ELECTRONICS ENGINEERING
(Model Examination)
(Each question carries 1 mark, for each wrong answer 1/3 marks will be deducted from total score)

1. At the base –emitter junction of a transistor, one finds …….


a. reverse bias
b. a wide depletion layer
c. low resistance
d. none of the above
2. The input impedance of a transistor is ………
a. high
b. low
c. very high
d. almost zero
3. In a transistor,………..
a. IC =IE +IB
b. IB =IC +IE
c. IE =IC - IB
d. IE =IC +IB

4. The value of  of a transistor is ………………………..


a. more than 1
b. less than 1
c. 1
d none of the above
5. The output impedance of a transistor is .. …………………
a. high
2. Zero
c. low
d. very low
6. In a transistor, IC = 100mA and IE=100.5 mA. The value of β is ……………………..
a.100
b.50
c. about 1
d.200
7. In a transistor, β =100 and collector current is 10mA.Then IE is …………………….
a. 10mA
b 10.1 mA
c. 11mA
d. none of the above
8. The relation between β and α is …….
a. β = 1 / 1-α
b. β = 1-α / α
c. β =α / 1-α
d. β =α / 1+α
9. The value of β for a transistor is generally ………..
a.1
b. less than 1
c. between 20 and 500
d .above 500
10. The most commonly used transistor arrangement is …………. arrangement.
a. common emitter
b. common base
c. common collector
d. none of the above
11. The input impedance of a transistor connected in …….arrangement is the highest
a. common emitter
b. common collector
c. common base
d. none of the above
12. The output impedance of a transistor connected in ……………….. arrangement is the highest.
a. common emitter
b. common collector
c. common base
d. none of the above.
13.The phase difference between the input and output voltages in a common base arrangement is
…………………..
a. 180˚
b.90˚
c.270˚
d.0˚
14. The power gain of a transistor connected in ……..…….arrangement is the highest.
a. common emitter
b. common base
c. common collector
d. none of the above
15. The phase difference between the input and output voltages of a transistor connected in common
emitter arrangement is ………………………….
a. 0˚
b. 180˚ ˚
c. 90˚
d. 270˚
16. The voltage gain of a transistor connected in ……………..arrangement is the highest.
a. common base
b. common collector
c. common emitter
d. none of the above
17. As the temperature of a transistor goes up, the base-emitter resistance …………….
a. decreases
b. increases
c. remains the same
d. none of the above
18. The voltage gain of a transistor connected in a common collector arrangement is……………
a. equal to 1
b. more than 10
c. more than 100
d. less than 1
19. The phase difference between the input and output voltages of a transistor connected in common
collector arrangement is ….
a.180˚
b.0˚
c.90˚
d.270˚

20. BC 147 transistor indicates that is made of …………………..


a. germanium
b. silicon
c. carbon
d. none of the above
21. A transistor is connected in CB mode. If it is now connected in CE mode with same bias voltages,
the values of IE , IB and IC will …………………….
a. remain the same
b. increase
c. decrease
d. none of the above

22. If the value of  is 0.9, then value of  is ……….


a.9
b.0.9
c.900
d.90
23. In a transistor, signal is transferred from a ……….circuit.
a. high resistance to low resistance
b. low resistance to high resistance
c. high resistance to high resistance
d. low resistance to low resistance
24. The arrow in the symbol of a transistor indicates the direction of …………………
a. electron current the emitter
b. electron current in the collector
c. hole current in the emitter
d. donor ion current.
25. The leakage current in CE arrangement is …………… that in CB arrangement.
a. more than
b. less than
c. the same as
d. none of the above
26. A heat sink is generally used with a transistor to …………………..
a. increase the forward current
b. decease the forward current
c. compensate for excessive doping
d. prevent excessive temperature rise
27. The most commonly used semiconductor in the manufacture of a transistor is ……………..
A .germanium
b. silicon
c. carbon
d. none of the above
28. The collector –base junction in a transistor amplifier has ………………………
a. forward bias at all times
b. reverse bias at all times
c. low resistance
d. none of the above
29. In an npn transistor, p region is called …………………..
a. collector
b. emitter
c. base
d. none of the above
30. Most of the majority carriers from the emitter ……………..
a. recombine in the base
b. recombined in the emitter
c. are lost in the collector
d. none of the above
31. The value of α of a transistor is defined as ……………………
a. ∆IC /∆IE
b. ∆IC/∆IB
c. ∆IE /∆IB
d. ∆ IB/∆IC
32. In a transistor IC =9.5 mA, IE=10mA,Then the value of α is …………………..
a.10
b.9.5
c.95
d. 0.95
33. The β of a transistor is defined as …………………….
a. ∆IC/ ∆IE
b. ∆IE/∆IC
c. ∆IC/∆IB
d. ∆IE/∆IB
34. The base emitter junction in a transistor amplifier has ………………………
a. forward bias at all times
b. reverse bias at all time
c. high resistance
d. none of the above
35. In Fig. if VCB =4 V and VBE =0.7 V, then VCE is equal to ………..

a. 3 volts
b. 5 volts
c. 4 volts
d. 4.7 volts
36. If VCE =10V, RC =10KΩ in above fig, what will be the voltage across RC ?
a.15 V
b.20 V
c.25 V
d.10 V
37. In the above question what will be the IC?
a. 5 mA
b. 4 mA
c. 3 mA
d. 2 mA
38. If in above fig, IB is adjusted to 10 μ A while β =100 and RC =10 kΩ, What will be VCE?
a.10V
b.15V
c.25V
d.20V
39. Referring to above fig, what will happen if emitter (E) and collector (C) are short circuited?
a. VCE will be 0 i.e. no output
b. Input will be zero
c. VCE will be 30 V
d. None of the above
40. Referring to above fig, what will happen if base (B) and emitter (E) are short circuited?
a. VCE will be 0 i.e. no output
b. Input will be zero
c. VCE will be 30 V
d. None of the above
41. Referring to above fig, what will happen collector load RC is short circuited?
a. VCE will be 0 i.e. no output
b. Input will be zero
c. VCE will be 30 V
d. None of the above
42. Fig shows one of the collector curves of a transistor. What is the Knee voltage?

a. 0.3 V
b. 0.8 V
c. 0.9 V
d. 0.7 V
43. In above Fig, what will be the value of β at point A?
a.100
b.200
c.150
d.250
44. Fig shows the output characteristics of a transistor and d.c . Load line. What will be the operating
point when base current is 10μA?

a. 10V, 2 mA
b.15V, 1 mA
c.10V, 1mA
d. 15 V, 2mA
45. In above fig, what will be the operating point when base current is 20μA?
a. 10V, 2 mA
b.15V, 1 mA
c.10V, 1mA
d. 15 V, 2mA
46. Fig. (i) shows the transistor circuit and fog (ii) its d.c. load line. What will be the value of VCC?

a. 10V
b.9V
c.11V
d. 12 V
47. Referring to above Figs (i) and (ii), what will be the value of RC?
a.1kΩ
b.3kΩ
c.4kΩ
d.2kΩ
48. If in above fig (ii), VCE =6V, what will be the operating point?
a.6V, 3mA
b.5V, 4mA
c.12V, 6mA
d. None of the above
49. The operating point in above fig is 6V, 3mA. If β =100, what will be d.c base current?
a.0.01mA
b. 0.02mA
c. 0.03mA
d. None of the above
50. It is desirable that a transistor amplifier should have …………..input impedance and ………..output
impedance.
a. low, high
b. high, low
c. high, high
d. low, low
51. If in a transistor, VCB =4V, VBE= 0.7V, then VCE is equal to ………………..
A.3.3 V
b.4.7V
c.5.4V
d.5.0V
52. The current gain of a transistor in common base mode is 0.99.To change the emitter current by
5mA, the necessary change in collector current is
A.0.916 mA
b.2.45mA
c.4.95mA
d.5.1mA
53. In an npn transistor circuit, the collector current is 10mA. If 90% of electrons are able to reach the
collector, then,
a. emitter current will be 9mA
b. emitter current will be 10mA
c. base current will be 0.1mA
d. base current will be 1mA
54. In fig, the base is at 0V, emitter at -2 V and collector at +1 V, then,

a. collector is reverse biased


b. emitter is forward biased
c. emitter is reverse biased
d. None of the above
55. In above fig,
a. collector is forward biased
b. collector is reverse biased
c. emitter is forward biased
d. None of the above
56. The α-rating and β–rating of a transistor are related as:
1 1
a. ∝ + 𝛽 =1
1 1
b. ∝
- 𝛽 =1

1 1
c. 𝛽
- ∝ =1

d. None of the above


57. Transistor biasing represents ……………………. conditions
a. a.c
b. d.c
c. both a.c and d.c
d. None of the above
58. Transistor biasing is done to keep ……………………. In the circuit.
a. proper direct current
b. proper alternating current
b. the base current small
d. collector current small
59. Operating point represents …………………………
a. values of IC and VCE when signal is applied
b. the magnitude of signal
c. Zero signal values of IC and VCE
d. None of the above
60. If biasing is not done in an amplifier circuit, it results in …………………
a. decrease in base current
b. unfaithful amplification
c. excessive collector bias
d. None of the above

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