SOLVED MODEL QUESTION PAPER 1 -As PER 2024 PATTERN

Basic Electronics Engineering (ESC-101-ETC]

FE. (Common to All Branches) Sem VII (End Sem)

Time : 2, Hours]
[Maximum Marks : 70

Instructions
1) Answer Q.1 or Q.2; Q.3 or Q.4; Q.5 or Q.6; Q.7 or Q.8; Q.9 or Q.10.
2) Neat diagrans must be drawn wherever necessary.
3) Figures to the right indicate full marks.
4) Assume suitable data, if necessary.
5) Use of non-programmable electronic pocket calculator is permitted.
[4]
a.1 a) Compare active and passive components. (Refer section 1.2)
b) Explain the operation of diode in forward biased condition and draw its V-I characteristics.
(Refer sections 2.13 and 2.14) [5]

section 2.17) (5]

c) Draw the circuit of half wave rectifier and explain the operation with waveforms. (Refer
OR

(4]
Q.2 a) What is the impact of electronics in industry and society ? (Refer section 1.1)
and load resistance of
b) In acentre tapped FWR, the rms half secondary voltage is 10 V. Assuming ideal diodes
2 kse, Find : DC load current, ripple factor and efficiency of rectification. (Refer example 2.18.3)
[6]

[4]
c) Compare LED and conventional p-n junction diode. (Refer section 3.1)
Q.3 a) Explain the working principle of npn transistor with suitable diagram. (Refer section 4.5) [6]
section 5.3)
b) Explain the construction and operation of n-channel enhancement type MOSFET. (Refer [6]

What is channel length modulation ? (Refer section 5.10) [2]

c)
OR

Q.4 a) Calculate the . o and B for the given transistor for which Ic =5 mA, lg =50 A and lo = 1 4.
(Refer example 4.7.4) [6]
5.8)
Give the comparison between BJT and MOSFET. (Refer section
[7]
b)
[1]
c) Define channel length. (Refer section 5.10)
Q.5 a) i) Convert : 1) (372.26), to hexadecimal 2) (5F1.6C),6 to octal 3) (9D.33),6 to decimal.
(31
(Refer example 6.3.18)
 with suitable truth tables,
AND, OR, NOT and NAND gates
b) Draw and explain the circuit diagram of (6]
(Refer section 7.1)
betwcen microprocessor and microcontroller. (Refer section 8.9)
c) Gve the comparison
OR
(4]
hexadecimal. (Refer example 6.3.10)
Q. a) Convert i) (2BA-OC)), to octal ii) (462.27), to [41
b) State and prove DeMorgan's theorem. (Refer section 7.4)
truth table and logic diagram. (Refer section 8.2) [6]
C) Lxplain SR flip-flop with the help of their
Q.7 a) DIferentiate active and passive sensors. (Refer section 11.3)
system. (Refer section 11.11) [6]
b) Drawand explain the block diagram of loT-based automation
[6]
c) Draw and explain the block diagram of GSM. (Refer section 12.8)
OR

0°C resistance is 100 S2 and it's resistance

Q.8 a) An RTD is inserted in an oven is having a resistance 160 SQ. At
coefficient is 0.00392. Determine the change in temperature. (Refer example 11.6.2)
temperature (2]

b) Explain the working of biosensor with the help of neat block diagram. (Refer section 11.8) [6]

c) Explain different types of cables used in electronic communication.

(Refer section 12.4) [6]

Q.9 a) Draw the internal block schematic of op-amp and mention the role of each stage. (Refer section 9.4) [5]

b) Explain how to conert galvanometer to analog voltmeter and how to use it as multi-range voltmeter ?
(Refer section 10.3) [5]

c) Draw and explain the block diagram of digital multimeter. (Refer section 10.4) [4]
OR

Q.10 a) Define following parameters of op-amp and mention their ideal and practical values.
i) CMRRi) Input bias current ii) Input offset voltage iv) Slew rate v) PSRR (Refer section 9.6) [51

b) Explain the working of function generator, with the help of neat block diagram. (Refer section 10.5)
c) List the advantages of DS0. (Refer section 10.6) (3]
 SOLVED MODEL QUESTION PAPER 2 . AS PER 2024 PATTERN
Basic Electronics Engineering
F.E. (Common to All Branches) Sem(ESC-101-ETC]
VII (End Sem)
Hours) [Maximum Marks :70
Tine: 2;
2

at a) Define active and passive components stating their examples. (Refer section 1.2) [41
Draw and explain V- Icharacteristics of P-N junction diode and define these
parameters.
i)Cut-in voltage i) PIV i) Reverse saturation current. (Refer section 2.14) (51
What is LED ? Draw its Symbol and explain its construction. (Refer section 3.1) (51

OR

02 a) Abridge rectifier is applied with input from astep down transformer having turns ratio &: 1and input 230 V.
50 Hz. If the Ry = 1L, R. = 10 2 and Ru = 2kQ. Find : 1) DC power output 2) PIV across each dtode
3) Percentage eficiency 4) Percentage regulation at full load. (Refer example 2.19.1) (8]
b) Explain the working of photodiode along with its characteristics, Whu is it operated in reverse biased condition ?
(Refer section 3.3) [6]

0.3 a) With a neat diagram explain output characteristics of npn transistor in CE-configuration. Indicate and explain
[6]
three regions of operation. (Refer section 4.6)
b) Explain the n-well methods for fabricating CM0S transistors. (Refer section 5.12) [8]
OR

Q.4 a) Compare CB, CE and CC transistor configurations. (Refer section 4.7) [6]

b) Draw and explain drain characteristics of an n-channel enhancement type MOSFET and show its operating
regions. (Refer section 5.4) [5]

Why is MOSFET preferred in VLSI ? (Refer section 5.9) [3]

c)
Q.5 a) Perform (110011 - 111001) using 2's complement method. (Refer example 6.6.13) [3]
7.5.3)
b) Draw and explain full adder using two half address with its truth table. (Refer example [5]
section 8.13)
c) Explain the typical stages involved in the 1C fabrication process. (Refer [6]
OR

decimal
Q.6 a) i) Convert (105.15),n to binary i) Convert (4057.067), to
example 6.3.15)
ii) Convert (1101101110.1001 101), to hexadecimal. (Refer [3]
section 7.2)
b) Why NAND and NOR gates are called universal gates ? (Refer
section 8.7)
c)Draw and explain the block diagram of microprocessor. (Refer [6]

Q.7 a) Mention the factors to be considered while selecting asensors for an application. (Refer section 11.4) [4]

b) Explain the construction and principle of operation of thermocouple and also state the advantages, limitations
and applications of thermocouple. (Refer section 11.6.1) [6]
12.6)
Give comparison between wired and wireless media. (Refer section (4]
(M -3)
 OR
Q.8 a) Explain the construction and principle of operation of LVDT. (Refer section 11.5) (5]
b) Explain the construction and principle of operation of RTD and also state the applications of KTD.
(Refer section 11.6.3)
©) Explan the elements of communication system with the help of block diagram. (Refer section 12.2) (4]
Q.9 a)
Draw the circuit of op-amp as an inverting amplifier. Derive the expression for its gait.
(Refer section 9.12)
D) Explain how to convert galvanometer to analog ammeter and how to use it as multi-range ammeter ?
(Refer section 10.3)
[6]
OR
Q.10 a) Draw the circuit of op-amp as a noninverting amplifier. Derive the expression for its gain.
(Refer section 9.13)
b) Explain the block diagram of ac to dc power supply. (Refer section 10.7)
[6]