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7MBR75VN120-50 IGBT Modules

IGBT MODULE (V series)

1200V / 75A / PIM
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product

Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Maximum
Items Symbols Conditions Units
ratings
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Ic Continuous Tc=100°C 75
Inverter

Icp 1ms Tc=80°C 150

Collector current A
-Ic 75
-Ic pulse 1ms 150
Collector power dissipation Pc 1 device 385 W
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
IC Continuous Tc=80°C 50
Brake

Collector current A
ICP 1ms Tc=80°C 100
Collector power dissipation PC 1 device 280 W
Repetitive peak reverse voltage (Diode) VRRM 1200 V
Repetitive peak reverse voltage VRRM 1600 V
Converter

Average output current IO 50Hz/60Hz, sine wave 75 A

Surge current (Non-Repetitive) IFSM 10ms, Tj=150°C 520 A
I2t (Non-Repetitive) I2 t half sine wave 1352 A2 s
Inverter, Brake 175
Junction temperature Tj
Converter 150
Operating junciton temperature Inverter, Brake 150
Tjop °C
(under switching conditions) Converter 150
Case temperature Tc 125
Storage temperature Tstg -40 to +125
between terminal and copper base (*1)
Isolation voltage Viso AC : 1min. 2500 VAC
between thermistor and others (*2)
Screw torque Mounting (*3) - M5 3.5 Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)

1 1259c
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Electrical characteristics (at Tj= 25°C unless otherwise specified)

Characteristics
Items Symbols Conditions Units
min. typ. max.
Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 1.0 mA
Gate-Emitter leakage current IGES VGE = 0V, VGE = ±20V - - 200 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 75mA 6.0 6.5 7.0 V
Tj=25°C - 2.25 2.70
VCE (sat) VGE = 15V
Tj=125°C - 2.60 -
(terminal) IC = 75A
Tj=150°C - 2.65 -
Collector-Emitter saturation voltage V
Tj=25°C - 1.85 2.30
VCE (sat) VGE = 15V
Tj=125°C - 2.20 -
(chip) IC = 75A
Tj=150°C - 2.25 -
Internal gate resistance Rg (int) - - 10 - Ω
Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 6.0 - nF
Inverter

ton - 0.39 1.20

Turn-on time tr VCC = 600V - 0.09 0.60
IC = 75A
tr (i) - 0.03 - µs
VGE = +15 / -15V
toff RG = 2.2Ω - 0.53 1.00
Turn-off time
tf - 0.06 0.30
Tj=25°C - 2.10 2.55
VF
IF = 75A Tj=125°C - 2.25 -
(terminal)
Tj=150°C - 2.20 -
Forward on voltage V
Tj=25°C - 1.70 2.15
VF
IF = 75A Tj=125°C - 1.85 -
(chip)
Tj=150°C - 1.80 -
Reverse recovery time trr IF = 75A - - 0.35 µs
VGE = 0V
Zero gate voltage collector current ICES - - 1.0 mA
VCE = 1200V
VCE = 0V
Gate-Emitter leakage current IGES - - 200 nA
VGE = +20 / -20V
Tj=25°C - 2.10 2.55
VCE (sat) VGE = 15V
Tj=125°C - 2.45 -
(terminal) IC = 50A
Tj=150°C - 2.50 -
Collector-Emitter saturation voltage V
Tj=25°C - 1.85 2.30
Brake

VCE (sat) VGE = 15V

Tj=125°C - 2.20 -
(chip) IC = 50A
Tj=150°C - 2.25 -
Internal gate resistance Rg (int) - - 4 - Ω
ton - 0.39 1.20
Turn-on time VCE = 600V
tr IC = 50A - 0.09 0.60
µs
toff VGE = +15 / -15V - 0.53 1.00
Turn-off time RG = 15Ω
tf - 0.06 0.30
Reverse current IRRM VR = 1200V - - 1.00 mA
VFM terminal - 1.80 2.25
Thermistor Converter

Forward on voltage IF = 75A V

(chip) chip - 1.40 -
Reverse current IRRM VR = 1600V - - 1.0 mA
T = 25°C - 5000 -
Resistance R Ω
T = 100°C 465 495 520
B value B T = 25 / 50°C 3305 3375 3450 K

Thermal resistance characteristics

Characteristics
Items Symbols Conditions Units
min. typ. max.
Inverter IGBT - - 0.39
Inverter FWD - - 0.55
Thermal resistance (1device) Rth(j-c)
Brake IGBT - - 0.54 °C/W
Converter Diode - - 0.43
Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.05 -
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.

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Characteristics (Representative)

[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip Tj= 150oC / chip
150 150
VGE=20V 15V VGE=20V 15V
12V
125 125 12V
Collector current: IC [A]

Collector current: IC [A]

100 100

75 75
10V 10V

50 50

25 25
8V 8V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage: VCE[V] Collector-Emitter voltage: VCE[V]

[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip Tj= 25oC / chip
150 8
Tj=25°C
Collector - Emitter voltage: VCE [V]

Tj=150°C
125
Collector current: IC [A]

6
100 Tj=125°C

75 4

50
2 Ic=150A
Ic=75A
25
Ic=38A

0 0
0 1 2 3 4 5 5 10 15 20 25

Collector current: IC [A] Gate - Emitter voltage: VGE [V]

[ Inverter ] [ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25oC Vcc=600V, Ic=75A, Tj= 25°C
Collector - Emitter voltage: VCE [200V/div]

100.0
VGE [5V/div]
Capacitance: Cies, Coes, Cres [nF]

10.0 Cies VCE

VGE
Gate - Emitter voltage:

1.0 0
Cres

Coes
0.1

0.0
0 10 20 30 -800 0 800

Collector - Emitter voltage: VCE [V] Gate charge: Qg [nC]

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[ Inverter ] [ Inverter ]
Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj= 125°C Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj= 150°C
10000 10000

Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

1000 1000
toff toff

ton ton

tr tr
100 100

tf tf

10 10
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Collector current: IC [A] Collector current: IC [A]

[ Inverter ] [ Inverter ] a
Switching time vs. gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=75A, VGE=±15V, Tj= 125°C Vcc=600V, VGE=±15V, Rg=2.2Ω
Switching loss : Eon, Eoff, Err [mJ/pulse ]

10000 20
Switching time : ton, tr, toff, tf [ nsec ]

Eon(150°C)
Eon(125°C)
15 Eoff(150°C)
1000 toff Eoff(125°C)

ton 10
tr
100 Err(150°C)
tf 5 Err(125°C)

10 0
0.1 1.0 10.0 100.0 0 25 50 75 100 125 150 175 200

Gate resistance : Rg [Ω] Collector current: IC [A]

[ Inverter ] [ Inverter ]
Switching loss vs. gate resistance (typ.) Reverse bias safe operating area (max.)
Vcc=600V, Ic=75A, VGE=±15V +VGE=15V,-VGE <= 15V, RG >= 2.2Ω ,Tj = 150°C
Switching loss : Eon, Eoff, Err [mJ/pulse ]

15 200

175
Eon(150°C)
Collector current: IC [A]

Eon(125°C) 150
10
125
Eoff(150°C)
Eoff(125°C) 100
RBSOA
75 (Repetitive pulse)
5 Err(150°C)
50
Err(125°C)
25

0 0
1 10 100 0 400 800 1200

Gate resistance : Rg [Ω] Collector-Emitter voltage : VCE [V]

(Main Terminals)
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[ Inverter ] [ Inverter ]
Forward current vs. forward on voltage (typ.) Reverse recovery characteristics (typ.)
chip Vcc=600V, VGE=±15V, Rg=2.2Ω
150 1000

Reverse recovery time : trr [ nsec ]

Reverse recovery current : Irr [ A ]
Tj=25°C

125
Forward current : IF [A]

100
trr(150°C)
trr(125°C)
75 Tj=150°C 100 Irr(150°C)
Irr(125°C)
Tj=125°C
50

25

0 10
0 1 2 3 4 5 0 50 100 150 200

Forward on voltage : VF [V] Forward current : IF [A]

[ Converter ]
Forward current vs. forward on voltage (typ.)
chip
150
Tj=25°C Tj=125°C
C
125
Forward current : IF [A]

100

75

50

25

0
0 1 2 3 4

Forward on voltage : VFM [V]

[ Thermistor ]
Transient thermal resistance (max.) Temperature characteristic (typ.)

10.00 100
Thermal resistanse : Rth(j-c) [ °C/W ]

4  −
t

Zth = ∑ rn ⋅  1 − e τ n 
 
n =1
 
Resistance : R [kΩ]

1.00 FWD[Inverter] 10
IGBT[Brake]

Conv. Diode
IGBT[Inverter]

0.10 1
n 1 2 3 4
τn [sec] 0.0023 0.0301 0.0598 0.0708
rn IGBT 0.04183 0.10606 0.14983 0.09228
[°C/W] FWD 0.05899 0.14957 0.21130 0.13014
B-IGBT 0.05792 0.14685 0.20746 0.12777
Conv 0.04612 0.11694 0.16520 0.10174
0.01
0.1
0.001 0.010 0.100 1.000 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

Pulse width : Pw [sec] Temperature [°C ]

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[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip Tj= 150oC / chip
100 100
VGE=20V VGE=20V
15V 15V
12V
Collector current: IC [A]

Collector current: IC [A]

75 75
12V

50 50
10V 10V

25 25
8V
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage: VCE[V] Collector-Emitter voltage: VCE[V]

[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip Tj= 25oC / chip
100 8
Tj=25°C
Collector - Emitter voltage: VCE [V]

Tj=150°C
Collector current: IC [A]

75 6
Tj=125°C

50 4

Ic=100A
25 2
Ic=50A
Ic=25A

0 0
0 1 2 3 4 5 5 10 15 20 25

Collector-Emitter voltage: VCE[V] Gate - Emitter voltage: VGE [V]

[ Brake ] [ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25oC Vcc=600V, Ic=50A, Tj= 25°C
Collector - Emitter voltage: VCE [200V/div]

10.0
VGE [5V/div]
Capacitance: Cies, Coes, Cres [nF]

VCE VGE
Cies
Gate - Emitter voltage:

1.0 0

Cres

Coes

0.1
0 10 20 30 -600 0 600

Collector - Emitter voltage: VCE [V] Gate charge: Qg [nC]

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Outline Drawings (Unit: mm)

shows theoretical dimension.

( ) shows reference dimension.

Section A-A

Equivalent Circuit Weight: 310g(typ.)

[ Converter ] [ Brake] [ Inverter ] [ Thermistor ]

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WARNING

1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2014.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.

2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.

3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.

4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
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• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment

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(without limitation).
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• Submarine repeater equipment

7.Copyright ©1996-2014 by Fuji Electric Co., Ltd. All rights reserved.

No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

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Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.