http://www.fujielectric.

com/products/semiconductor/

2MBI300VH-170-50 IGBT Modules

IGBT MODULE (V series)

1700V / 300A / 2 in one package
Features Package No. : M276
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage VCES 1700 V
Gate-Emitter voltage VGES ±20 V
TC =25°C 300
IC Continuous
TC =100°C 440
Collector current IC pulse 1ms 600 A
-IC 300
-IC pulse 1ms 600
Collector power dissipation PC 1 device 1805 W
Junction temperature Tj 175
Operating junction temperature (under switching conditions) Tjop 150
°C
Case temperature TC 125
Storage temperature Tstg -40 ~ 125
Isolation voltage between terminal and copper base (*1) Viso AC : 1min. 4000 VAC
Mounting (*2) - 6.0
Screw torque Nm
Terminals (*3) - 5.0
Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 3.0-6.0 N·m (M5 or M6)
Note *3: Recommendable Value : 2.5-5.0 N·m (M5)
Electrical characteristics (at Tj = 25°C unless otherwise specified)
Characteristics
Items Symbols Conditions Units
min. typ. max.
Zero gate voltage collector current ICES VGE = 0V, VCE = 1700V - - 2.0 mA
Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 400 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 300mA 6.0 6.5 7.0 V
Tj =25°C - 2.15 2.60
VCE (sat)
Tj =125°C - 2.55 -
(terminal)
VGE = 15V Tj =150°C - 2.60 -
Collector-Emitter saturation voltage V
IC = 300A Tj =25°C - 2.00 2.45
VCE (sat)
Tj =125°C - 2.40 -
(chip)
Tj =150°C - 2.45 -
Internal gate resistance RG (int) - - 2.5 - Ω
Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 33 - nF
ton - 1150 -
Turn-on time tr VCC = 900V, IC = 300A - 580 -
tr (i) VGE = ±15V, Rg_on= 4.7Ω, Rg_off= 2.4Ω - 60 - nsec
toff Tj =150°C, LS = 30nH - 1050 -
Turn-off time
tf - 140 -
Tj =25°C - 1.95 2.40
VF
Tj =125°C - 2.15 -
(terminal)
VGE = 0V Tj =150°C - 2.15 -
Forward on voltage V
IF = 300A Tj =25°C - 1.80 2.25
VF
Tj =125°C - 2.05 -
(chip)
Tj =150°C - 2.05 -
Reverse recovery time trr IF = 300A - 220 - nsec
Thermal resistance characteristics
Characteristics
Items Symbols Conditions Units
min. typ. max.
IGBT - - 0.083
Thermal resistance(1device) Rth(j-c)
FWD - - 0.130 °C/W
Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.0125 -
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.

1 7930a
May 2012
2MBI300VH-170-50 IGBT Modules
http://www.fujielectric.com/products/semiconductor/

Characteristics (Representative)

Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip Tj= 150°C / chip
700 700
VGE=20V 15V 12V VGE= 20V 15V
600 600
12V
Collector current: Ic [A]

Collector current: Ic [A]

500 500

400 400
10V 10V
300 300

200 200

100 100 8V
8V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage: VCE [V] Collector-Emitter voltage: VCE [V]

Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage
VGE= 15V / chip Tj= 25°C / chip
700 8

Tj=25°C 125°C 150°C

600
Collector-Emitter Voltage: VCE [V]

6
Collector Current: Ic [A]

500

400
4
300

Ic=600A
200 2 Ic=300A
Ic=150A
100

0 0
0 1 2 3 4 5 5 10 15 20 25
Collector-Emitter Voltage: VCE [V] Gate-Emitter Voltage: VGE [V]

Gate Capacitance vs. Collector-Emitter Voltage Dynamic Gate Charge (typ.)

VGE= 0V, ƒ= 1MHz, Tj= 25°C Vcc=900V, Ic=300A, Tj= 25°C
100 20 1200
Gate Capacitance: Cies, Coes, Cres [nF]

Cies 15 900
Collector-Emitter voltage: VCE [V]

VCE
Gate-Emitter voltage: VGE [V]

10 600
10
5 300
***

0 0
Cres
-5 -300
1 Coes VGE
-10 -600

-15 -900

0.1 -20 -1200

0 10 20 30 -4 -2 0 2 4
Collector-Emitter voltage: VCE [V]
Gate charge: Qg [μC]

2
2MBI300VH-170-50 IGBT Modules
http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg_on=4.7Ω, Rg_off=2.4Ω, Tj=125°C Vcc=900V, VGE=±15V, Rg_on=4.7Ω, Rg_off=2.4Ω, Tj=150°C

10000 10000
Switching time: ton, tr, toff, tf [nsec]

Switching time: ton, tr, toff, tf [nsec]

toff toff
1000 1000
ton tr ton tr

100 tf 100 tf

10 10
0 200 400 600 800 0 200 400 600 800

Collector current: Ic [A] Collector current: Ic [A]

Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=900V, Ic=300A, VGE=±15V, Tj=125°C Vcc=900V, VGE=±15V, Rg_on=4.7Ω, Rg_off=2.4Ω

10000 200
Switching loss: Eon, Eoff, Err [mJ/pulse]

180 Tj=125 oC Eon

Switching time: ton, tr, toff, tf [nsec]

toff ton
160 Tj=150 oC
tr Eoff
1000 140
120
100 Err
80
100
60
tf 40
20
10 0
1 10 100 0 100 200 300 400 500 600 700

Gate resistance: Rg_on, Rg_off [Ω] Collector current: Ic [A]

Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)
Vcc=900V, Ic=300A, VGE=±15V, Tj=125, 150°C +VGE=15V, -VGE=15V, Rg_off=2.4Ω, Tj=150°C
400 700
Tj=125 oC
Switching loss: Eon, Eoff, Err [mJ/pulse]

350 Eon
Tj=150 oC 600
300
Collector current: Ic [A]

500
250
400
200
300
150
Eoff
200
100

50 100
Err
0 0
1 10 100 0 500 1000 1500 2000
Gate resistance: Rg_on, Rg_off [Ω] Collector-Emitter voltage: VCE [V]
(Main terminals)

3
2MBI300VH-170-50 IGBT Modules
http://www.fujielectric.com/products/semiconductor/

Forward Current vs. Forward Voltage (typ.) Reverse Recovery Characteristics (typ.)
chip Vcc=900V, VGE=±15V, Rg_on=4.7Ω, Tj=125°C
700 1000

Tj=25°C

Reverse recovery time: trr [nsec]

600

Reverse recovery current: Irr [A]

Irr
Forward current: IF [A]

500
trr
400
100
300

200 125°C

100 150°C

0 10
0 1 2 3 0 100 200 300 400 500 600 700
Forward on voltage: VF [V] Forward current: IF [A]

Reverse Recovery Characteristics (typ.)

Transient Thermal Resistance (max.)
Vcc=900V, VGE=±15V, Rg_on=4.7Ω, Tj=150°C
1000 1
***
Reverse recovery time: trr [nsec]
Reverse recovery current: Irr [A]

Irr
Thermal resistanse: Rth(j-c) [°C/W]

FWD
0.1
trr
IGBT
100
4  t
-– 

0.01 Zth = Σ
n=1
rn •  1–e n 



τ


n 1 2 3 4
τn [sec] 0.0023 0.0301 0.0598 0.0708
rn IGBT 0.00890 0.02257 0.03189 0.01964
10 0.001
[°C/W] FWD 0.01394 0.03535 0.04994 0.03076

0 100 200 300 400 500 600 700 0.001 0.01 0.1 1
Forward current: IF [A] Pulse Width : Pw [sec]

FWD safe operating area (max.)

Tj=150°C
700

600
Reverse recovery current: Irr [A]

500

400
Pmax=600kW
300

200

100

0
0 500 1000 1500 2000
Collector-Emitter voltage: VCE [V]
(Main terminals)

4
2MBI300VH-170-50 IGBT Modules
http://www.fujielectric.com/products/semiconductor/

Outline Drawings, mm

1. Outline Drawing ( Unit : mm )

Weight: 370g (typ.)

2. Equivalent
Equivalent Circuit
Circuit Schematic

C1

G1
E1
C2E1

G2
E2

E2

5
2MBI300VH-170-50 IGBT Modules
http://www.fujielectric.com/products/semiconductor/

WARNING

1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2012.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.

2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.

3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.

4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
• Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment

6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).
• Space equipment • Aeronautic equipment • Nuclear control equipment
• Submarine repeater equipment

7.Copyright ©1996-2012 by Fuji Electric Co., Ltd. All rights reserved.

No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.