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1MBI300HH-120L-50 IGBT Modules

IGBT MODULE
1200V / 300A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter DB for Motor Drive
AC and DC Servo Drive Amplifier (DB)
Active PFC
Industrial machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
TC =25°C 450
IC Continuous
TC =80°C 300
TC =25°C 900
Collector current Icp 1ms A
TC =80°C 600
-IC 75
-IC pluse 1ms 150
Collector Power Dissipation PC 1 device 2090 W
Reverse voltage for FWD VR 1200 V
IF Continuous 300
Forword current for FWD A
IF pulse 1ms 600
Junction temperature Tj +150
°C
Storage temperature Tstg -40 to +125
between terminal and copper base (*1)
Isolation voltage Viso AC : 1min. 2500 VAC
between thermistor and others (*2)
Mounting (*3) 3.5
Screw Torque - Nm
Terminals (*4) 4.5
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
Note *3: Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6)
Note *4: Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)

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Electrical characteristics (at Tj = 25°C unless otherwise specified)

Characteristics
Items Symbols Conditions Units
min. typ. max.
VCE = 1200V
Zero gate voltage collector current ICES - - 4.0 mA
VGE = 0V
VCE = 0V
Gate-Emitter leakage current IGES - - 800 nA
VGE=±20V
VCE = 20V
Gate-Emitter threshold voltage VGE(th) 5.7 6.2 6.7 V
IC = 300mA
VCE(sat) Tj = 25°C - 3.45 3.75
IGBT+Inverse Diode

(terminal) IC = 300A Tj =125°C - 4.35 -

Collector-Emitter saturation voltage V
VCE(sat) VGE=15V Tj = 25°C - 3.20 3.50
(chip) Tj =125°C - 4.10 -
Input capacitance Cies VCE=10V,VGE=0V,f=1MHz - 23 - nF
ton VCC = 600V - 0.20 0.50
Turn-on time tr IC = 300A - 0.10 0.40
tr (i) VGE = ±15V - 0.30 - μs
toff RG = 2.1 Ω - 0.30 0.70
Turn-off time LS = 20nH
tf - 0.05 0.20
VF Tj = 25°C - 1.80 2.30
(terminal) IF = 75A Tj =125°C - 1.95 -
Forward on voltage V
VF VGE=0V Tj = 25°C - 1.70 2.15
(chip) Tj =125°C - 1.85 -
Reverse Current IR VCE = 1200V - - 1.0 mA
VF Tj = 25°C - 8.30 9.55
(terminal) IF = 300A Tj =125°C - 4.50 -
FWD

Forward on voltage V
VF VGE=0V Tj = 25°C - 7.90 9.15
(chip) Tj =125°C - 4.20 -
Reverse recovery time trr IF = 300A - - 0.20 μs
Lead resistance, terminal-chip (*5) R lead - 0.70 - mΩ
T = 25°C - 5000 -
Thermistor

Resistance R Ω
T = 125°C 465 495 520
B value B T = 25/50°C 3305 3375 3450 K
Note *5: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Characteristics
Items Symbols Conditions Units
min. typ. max.
IGBT - - 0.051
Thermal resistance(1device) Rth(j-c) Inverse Diode - - 0.460
°C/W
FWD - - 0.120
Contact Thermal resistance Rth(c-f) with Thermal Compound (*6) - 0.0125 -
Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.

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Characteristics (Representative)

Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C / chip Tj=125°C / chip
800 800

15V 12V
VGE=20V 15V 12V

Collector current : IC [A ]
Collector current : IC [ A ]

600 VGE=20V 10V 600

10V

400 400

8V
200 8V 200

0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
Collector-Emitter voltage : VCE [ V ] Collector-Emitter voltage : VCE [ V ]

Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip Tj=25°C / chip
800 10
Collector-Emitter voltage : VCE [ V ]

Tj=25°C Tj=125°C 8
Collector current : IC [ A ]

600

6
400
IC=600A
4
IC=300A
200
IC=150A
2

0 0
0 1 2 3 4 5 6 7 5 10 15 20 25
Collector-Emitter voltage : VCE [ V ] Gate-Emitter voltage : VGE [ V ]

Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)

VGE=0V, f=1MHz, Tj=25°C VCC=600V, IC=300A, Tj=25oC

100.0
Collector- Emitter voltage : VCE[ 200V/div ]
Capacitance : Cies, Coes, Cres [ nF ]

Cies
Gate-Emitter voltage : VGE [ 5V/div ]

VCE VGE
10.0

Coes

1.0
Cres

0.1
0 10 20 30 0 200 400 600 800
Collector-Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ]

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Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=2.1Ω, Tj=25oC VCC=600V, VGE=±15V, RG=2.1Ω, Tj=125oC
1000 1000
Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

toff toff

ton
ton
tr
100 100
tr

tf
tf

10 10
0 100 200 300 400 0 100 200 300 400
Collector current : IC [ A ] Collector current : IC [ A ]

Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
VCC=600V, IC=300A, VGE=±15V, Tj=25oC VCC=600V, VGE=±15V, RG=2.1Ω

10000 20
Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Eoff(125°C)
Switching time : ton, tr, toff, tf [ nsec ]

16 Eoff(25°C)

1000 toff ton

Err(125°C)
tr 12

Eon(125°C)
8
100 Err(25°C)
tf Eon(25°C)
4

10 0
1 10 100 0 100 200 300 400
Gate resistance : RG [ Ω ] Collector current : IC [ A ]

Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)
VCC=600V, IC=300A, VGE=±15V, Tj=125oC +VGE=15V, -VGE <= 15V, RG >= 2.1Ω,Tj <= 125oC

100 700
Eon
600
Switching loss : Eon, Eoff, Err [ mJ/pulse ]

80
Collector current : IC [ A ]

500

60
400

300
40

Eoff 200
20
100
Err
0 0
1 10 100 0 400 800 1200 1600
Gate resistance : RG [ Ω ] Collector-Emitter voltage : VCE [ V ]

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FWD FWD
Forward current vs. Forward on voltage for Inverse Diode (typ.) Reverse recovery characteristics (typ.)
chip VCC=600V, VGE=±15V, RG=2.1Ω
600 1000

Reverse recovery time : trr [ nsec ]

Reverse recovery current : Irr [ A ]
Tj=125°C Tj=25°C
450
Forward current : IF [ A ]

Irr (125°C)
Irr (25°C)

300 100
trr (125°C)

trr (25°C)

150

0 10
0 2 4 6 8 10 0 100 200 300 400
Forward on voltage : VF [ V ] Forward current : IF [ A ]

Inverse Diode
Forward current vs. Forward on voltage (typ.) Transient thermal resistance (max.)
chip
200 1.000
Inverse Diode
Thermal resistance : Rth (j-c) [ oC/W ]

Tj=25°C Tj=125°C
150
Forward current : IF [ A ]

FWD
0.100
IGBT

100

0.010
50

0 0.001
0 1 2 3 4 0.001 0.010 0.100 1.000
Forward on voltage : VF [ V ] Pulse width : Pw [ sec ]

Thermistor
Temperature characteristic (typ.)

100

10
Resistance : R [kΩ]

0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160 180

Temperature [°C ]

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Outline Drawings, mm

Equivalent Circuit Schematic

C1

FWD
T1(G1)
NTC
T2(E1) C2E1

G2 Inverse Diode
E2

E2

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WARNING

1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.

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