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ABHÍJEEET SIR (6)

Transistors
Transistor Classification:

The transistor is the main building block element of electronics. It is a semiconductor device and it comes in
three general types: the Bipolar Junction Transistor (BJT), Field Efect Transistor (FET) and metal oxide
semiconductor Field Effect Transistor (MOSFET)

TRANSISTORS

BJT FET MOSFET|

BJT: Bipolar Junction Transistor


FET:Field Effect Transistor
MOSFET: Metal Oxide Semiconductor Field Effect Transistor

$ BJT:(Bipolar Junction Transistor)


the internal
It is named as transistor which is an acronym of two terms: -transfer-of-resistor. It means that
resistance of transistor transfers from one value to other values depending on the biasing voltage applied to the
transistor. Thus, it is called Transfer resistor: i.e., TRANSISTOR.
A bipolar transistor (BJT) is a three terminal semiconductor device in which the operation depends on the
interaction of both majority and minority carriers i.e., both Electrons and holes and hence the name bipolar.
e.g.
If transistor operation depends only on majority careers ie., either Electrons or holes then it is unipolar
FET (field Effect Transistor)
terminal. So it is called
The output voltage between two terminals controls the input current through the third
current controlled device. E.g., Bipolar junction transistor.
The output voltage between two terminals controls the input voltage through So it is called Voltage controlled
device. E.g., field Effect Transistor
This is the basic principle of the BJT It can be used as amplifier and logic switches.
BJT Consists of three terminals: Collector: C, Base:B Emitter: E
TYPES: There are two types of bipolar transistors NPN transistor and PNP transistor.
* Symbol, Construction of BJT:

PNP Tranalstor NPN Translator

Emter Colector Emitter Colncto

P N

Base A)Construction Base

b) TKO-dode AnalgOY
Ve

Va

c). Symtboks

Transistor Construction:
A p-n junction is represented by a diode. therefore, the p-n-p and n-p-n transistors are cquivalent to two diodes
connected back-to-back as shown in fig.
PNP Transistor: In PNP transistor a thin layer of N-type silicon is sandwiched between two layers of P-type
silicon.
NPN Transistor: In NPN transistor a thin layer of P-type silicon is sandwiched between two layers of
N-type silicon. The two types of BJT are represented in figure 2.1
Area: [CE>B] The area of collector layer is largest. So it can dissipate heat quickly. Area of base layer is smallest
and it is very thin layer. Area of cmitter layer is medium.
Doping level: (E>CB] Collector layer is moderately doped. So it has modium number of charges. Base layer is
lightly doped. So, it has a very few numbers of charges. Emitter layer is heavily doped. So it has largest number of
charges.
Junctions: There are two junctions in this transistor - junction J-1 and junction J-2. The junction between or C-B
junction. collector layer and base layer is called as collector-base junction The junction between base layer and
emitter layer is called as base-emitter junction or B-E junction. The two junctions have almost same potential barrier
voltage of 0.6V to 0.7V, just like in a diode. Equivalent transistor. As shown in Fig 2,a transistor has two p-a
junctions namely BE (base to Emitter) junction and CB (Collector to Base) junction.
Symbol: The construction and circuit symbols for both the PNP and NPN bipolar transistor are given above with the
arrow in the circuit symbol always showing the direction of "conventional current flow" betwen the base terminal
and its emitter terminal. The direction of the arrow always points from the positive P-type region to the ncgative
N-type region for both transistor types, exactly the same as for the standard diode symbol.
& Working Principle /Operation of transistor:
Enoer

Eriter

electrons to flow from n-type


The forward bias at the B-E junction reduces the barrier potential and causes the
emitter to p-type base.
lightly doped
Holes also will flow from p-type base to n-type emitter. But as the base is more
consists of electrons
than the emitter, almost all the current flowing across the B-E junction
entering the base from the emitter. Hence electrons are the majority carriers in an n-p-n
transistor.
region. Instead, they
Some of the electrons entering into the base region do not reach the collector
Fig. 3.4.1, due to recombination. As the base
flow out of the base terminal via the base connection as shown in
in the base region for recombination. Hence
region is very thin and lightly doped, there are very few holes available
about 2% electrons will flow out of base due to recombination.
constitute the collector
The remaining 98% electrons cross the reverse biased collector junction to
current. They cross the collector region and are collected by the supply Vcc.
From operation we could say that,
E= IC+ B (Their names emnitter current, base current, collector current etc)
- that means emitter current is always equal to the sum of collector current
and base current.
As Ib is very small compared with Ehence we could say that IE ~ 1C.

Transistor different regions of operations:


cannot work unless
Biasing is the process of applying external voltages to the transistor. A transistor
external DCpower supplies are connected to it.

which it is
A BJT is capable of operating in four diferent regions, depending on the way in
biased. The regions of operation are:
1. Cut off region (transistor is OFF)
2. Saturation region (transistor is fully ON)
3. Forward active region (transistor worked as amplifer)
4. Inverse active mode
Base Emitter junction Colector Base Junction Application
Region of operation
Cut off Region Reverse Bias Reverse Bias Open Switch
Forward Active region Forward bias Reverse Bias Amplifier
Saturation Region Forward bias Forward bias Closed Switch
Reverse active region Reverse Bias Forward bias Attenuator

Transistor configurations:
Ihe common terminal can be base, emitter or
output port there are three possible collectorDenending on which terminal is made common to input and
They are as follows: configurations of the transistor.
1.Common base (CB) configuration
2.Common emitter (CE) configuration
3.Common collector (CC) configuration
1.Common base (CB) configuration:

)Coon base conhrafion or D

The common base configuration is shown


above, The input is applied between
input and output ports. The input voltage is emitter and base. The base acts as
the common terminal between the
is IE. therefore VEB and the iput curent
The output is taken between collector and base.
Therefore, the output voltage is VCB and the output curent is Ic
Key Point:
Common terminal: Base
Input carrent: IE
Output current: Ic
Input Voltage: VEB
Output VoBtage: VCB
Current gain: alpha dc (less than one)
Voltage gain: medium
2 Coman Ease (C) cnfgeri

3. Comson Colen (CC) orfiggrsoa


Inorder to operate transistor in active region, the base emiter junction is forward biased and the collector base
junction is reverse biased.

Collecor s common
(a) Commnon cullector coufigurtion for Dp-o trnsisar (b)Cocmm0n colledor coafiguration for n

Key Point:
Common terminal: Collector
Input current: IB
o Output current: IE
o Input Voltage: VBC
o Output Voltage: VCE
Current gain: Unity
Voltage gain: medium
o Input resistance: High
o Output resistance: Low

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