Memory and Programmable Logic

Memory device:
Device to which binary information is transferred for storage,
and from which information is available for processing as
needed.

Memory unit:
Is a collection of cells capable of storing a large quantity of
binary information.

In digital systems, there are two types of memories:

1. Random-Access Memory (RAM)

2. Read-Only Memory (ROM)
 Memory and Programmable Logic
1. Random-Access Memory (RAM):
The process of transferring new information into memory is the memory write
operation.

The process of transferring information out of memory is the memory read operation.

2. Read-Only Memory (ROM):

Is an example of programmable logic device (PLD).
Other examples are:
programmable logic array (PLA),
programmable array logic (PAL), and
field-programmable logic gate Array (FPGA).
(PAL: Program. AND, fixed OR, PLA: Program. AND/OR)

3. A PLA is an integrated circuit with internal logic gates that are connected through
electronic paths, which behave similar to fuses.

Programming the device involves blowing those fuses along the paths that must be
removed to obtain a desired function.
 Random-Access Memory
Memory unit  stores binary information in groups of bits called words.

Memory word  group of 1’s and 0’s and may represent a number,
character(s), instruction, or other binary-coded information.

Most computer memories use words that are multiples of 8 bits (byte).
32-bit word  4 bytes
 Random-Access Memory
Each word in memory is assigned an address 0 up to 2k – 1 (k = # of
address lines).

memory content
 RAM: Write and Read Operations

To transfer a new word to be stored into memory:

1. Apply the binary address of the word to address lines.

2. Apply the data bits that must be stored in memory to the data input lines.
3. Activate the write input.

To transfer a stored word out of memory:

1. Apply the binary address of the word to address lines.

2. Activate the read input.
 Memory Types
• Integrated circuit RAM units are available in two possible operating modes:
static and dynamic.

• Static RAM (SRAM) consists of internal latches that store the binary
information. The stored information remains valid as long as power is applied
to the unit.

• Dynamic RAM (DRAM) stores the binary information in the form of electric
charges on capacitors provided by the MOS transistors.

• The charge on the capacitors tends to decay with time and the capacitors must
be periodically recharged by refreshing of the dynamic memory every few
milliseconds.

• DRAM offers reduced power consumption, large integration of units on chip.

• SRAM is easier to use and has shorter read and write cycles.
 Volatile vs. Non-Volatile Memory

 RAM (static and dynamic) is said to be volatile, since information

is lost when power is turned off.

 Non-volatile memory retains its information even when power is

turned off.

1. Magnetic disks: stored data is represented by the direction of

magnetization.

2. CD: compact disc is a piece of polycarbonate (a type of plastic) on

which a spiral track has been impressed. This spiral track is a series
of indentations ("pits") separated by flat areas ("land").

3. ROM: The internal storage elements are set to their values once
and after that are only read.
 EPROMS and PROMS
Erasable Programmable Read-Only Memory (EPROM)

• EPROM is a special type of memory that retains its contents until it is exposed to
ultraviolet light.

• To write to and erase an EPROM, you need a special device called a PROM
Programmer or PROM burner.

• An EPROM differs from a PROM in that a PROM can be written to only once and
cannot be erased.

• EPROMs are widely used in personal computers since they enable the manufacturer
to change the contents of the PROM before the computer is actually shipped. This
means that bugs can be removed and new versions installed shortly before delivery.

Electrically Erasable Programmable Read-Only Memory (EEPROM)

• EEPROM is like EPROM except that the previously programmed connections can be
erased with an electrical signal.
 Memory Cell

The storage part of the cell is modeled by an SR latch with associated gates.

•A = 1 in the read/write input provides the read operation by forming a

path from the latch to the output.
•A = 0 in the read/write input provides the write operation by forming a
path from the input to latch.
 4 x 4 RAM

When memory select = 1  one of the four words is selected.

READ Operation: the four bits of the selected word go through OR
gates to the output terminals.
WRITE operation: the data available in the input lines are transferred
into the four binary cells of the selected word. The memory cells that
are not selected are disabled.
 RAM

Commercial RAM  thousands of words, with each word 1 - 64 bits.

A memory with 2k words of n bits/word requires k address lines that go
into a k x 2k decoder.
 Read-Only Memory (ROM)
Read-only memory is a memory device in which permanent binary
information is stored.

• The number of words in a ROM is determined from the k address input

lines needed to specify the 2k words.

• The ROM does not have data inputs because it does not have the write
operation.
 Read-Only Memory (ROM)
A 32 x 8 ROM consists of 32 words of 8 bits each. The five input lines are decoded
by into 32 distinct outputs (memory addresses) using a 25 x 8 decoder. Each OR
gate has 32 input connections  32 x 8 ROM has internal connections 32 x 8.
In general, a 2k x n ROM will have k x 2k decoder and n OR gates with 2k x n
internal connections.
 Programming the Read-Only Memory
crosspoint

256 programmable
intersections

A programmable connection (a crosspoint) between two lines is logically equivalent

to a switch that can be be closed (two lines are connected) or open (two lines are
disconnected). A switch can be a fuse that normally connects the two points, but
can be opened by blowing the fuse using a high voltage pulse.
 Programming the Read-Only Memory

1
1 address 3
0 1 0 1 1 0 0 1 0 memory
0 content
0

Output A6 can be expressed in sum of minterms

as: A6 ( I 4 , I 3 , I 2 , I1 , I 0 )  (2,..., 29,30)
 Programmable Logic Device (PLD)

product terms sum terms

for Boolean functions for Boolean functions
 Programmable Logic ARRAY (PLA)

crosspoint
‘connected’

crosspoint
‘disconnected’

x0  x
 AB' AC  A' BC '

 ( AC  BC )'
x  1  x'
 PLA Programming Table

product Inputs Outputs

term A B C F1 F2
AB' 1 1 0 - 1 -
AC 2 1 - 1 1 1
BC 3 - 1 1 - 1
A' BC ' 4 0 1 0 1 -

Path between inputs & AND gates = inputs in programming table

1 connection from input variable to AND gate
0 connection from the complement of input variable to AND gate
-  blown fuse in the input variable and in its complement
Path between AND & OR gates = outputs in programming table
1 connection from output of AND gate to OR gate
-  blown fuse.
 PLA Programming example
Implement the following function with a PLA:
F1  (0,1,2,4)
F2  (0,5,6,7)