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BJT Sample Problem

The document presents a series of electronic problems related to transistor configurations, including fixed-bias and emitter-bias networks. Each problem involves calculating various parameters such as base current (IB), collector current (IC), and voltages (VCE, VC, VB, etc.) using given values and formulas. The solutions utilize principles of circuit analysis and transistor characteristics to derive the required values.

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carloalt24
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77 views18 pages

BJT Sample Problem

The document presents a series of electronic problems related to transistor configurations, including fixed-bias and emitter-bias networks. Each problem involves calculating various parameters such as base current (IB), collector current (IC), and voltages (VCE, VC, VB, etc.) using given values and formulas. The solutions utilize principles of circuit analysis and transistor characteristics to derive the required values.

Uploaded by

carloalt24
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Electronic Problems

Problem-1
Determine the following for the fixed-bias configuration of Fig.
a. IBQ and ICQ
b. VCEQ
c. V B and VC
d. VBC

Solution:
VCC − VBE 12 V−0.7 V
IBQ = = = 47 μA
RB 240∗ 103 Ω

ICQ = (β) ∗ IBQ = 50 ∗ (47 ∗ 10−6 A) = 2.35 mA

VCEQ = VCC − IC R C = 12 V − (2.35 mA) (2.2kΩ) = 6.83 V

VB = VBE = 0.7 V

VC = VCE = 6.83 V

Using double – subscript notation yields


VBC = VB − VC = 0.7 V − 6.83 V = −6.13 V
Using transistor loop

|𝑉𝐵𝐶 + 𝑉𝐶𝐸 + 𝑉𝐵𝐸 | = 0

𝑉𝐵𝐶 + 𝑉𝐶𝐸 − 𝑉𝐵𝐸 = 0 V

𝑉𝐵𝐶 = − 𝑉𝐶𝐸 + 𝑉𝐵𝐸 = −6.83 𝑉 + 0.7 𝑉 = −6.13 𝑉

1
Problem-2
Given the load line of Fig. below and the defined Q-point, determine the required values of VCC,
RC, and RB for a fixed-bias configuration.

Solution:

2
Problem-3
For the emitter-bias network of Fig., determine:
a. IB
b. IC
c. VCE
d. VC
e. VE
f. VB
g. VBC

Solution:
𝑉𝐶𝐶 − 𝑉𝐵𝐸 20 𝑉−0.7 𝑉 19.3 𝑉
𝐼𝐵 = = = = 40.1 𝜇𝐴
𝑅𝐵 + (𝛽+1) 𝑅𝐸 430 𝑘Ω+ (51) (1𝑘Ω) 481 𝑘Ω

𝐼𝐶 = 𝛽𝐼𝐵 = 50 ∗ (40.1 ∗ 10−6 𝐴) = 2.01 𝑚𝐴

𝑉𝐶𝐸 = 𝑉𝐶𝐶 − [𝐼𝐶 ∗ (𝑅𝐶 + 𝑅𝐸 )] = 20 𝑉 − [(2.01 𝑚𝐴) ∗ (2 𝑘Ω + 1 𝑘Ω)] = 13.97 𝑉

3
Problem-4
a. Draw the load line for the network of Fig. below on the characteristics for the transistor
appearing in the Fig.
b. For a Q-point at the intersection of the load line with a base current of 15 mA, find the
values of ICQ and VCEQ.
c. Determine the dc beta at the Q-point.
d. Using the beta for the network determined in part c, calculate the required value of RB
and suggest a possible standard value.

Solution:

4
5
Problem-5
Determine the dc bias voltage VCE and the current IC for the voltage divider configuration of
Fig. below

Solution:

6
Problem-6
Determine the quiescent levels of ICQ and VCEQ for the network of Fig. below

Solution:

7
Problem-7
Given the network of Fig. below and the BJT characteristics of Fig.
a. Draw the load line for the network on the characteristics.
b. Determine the dc beta in the center region of the characteristics. Define the chosen point
as the Q -point.
c. Using the dc beta calculated in part b, find the dc value of IB
d. Find ICQ and ICEQ.

Solution:

8
Problem-8
Given the information appearing in Fig. below, determine:

a. IC
b. RC
c. RB
d. VCE
e. VE
f. VB
g. VBC

9
Problem-9
Determine the currents IE and IB and the voltages VCE and VCB for the common-base
configuration of Fig. below.

Solution:

10
Problem-10
Determine VC and VB for the network of Fig. below.

Solution:

11
12
Problem-11
Given the device characteristics of Fig. below, determine VCC, RB, and RC for the fixed-bias
configuration of Fig.

Solution:

13
Problem-12
Given that ICQ = 2 mA and VCEQ = 10 V, determine R1 and RC for the network of Fig. below.

Solution:

14
Problem-13
The emitter-bias configuration of Fig. below has the following specifications:
ICQ = ½ Isat, ICsat = 8 mA, VC = 18 V, and β =110.
Determine RC, RE, and RB.

Solution:

15
Problem-14
Determine the resistor values for the network of Fig. below for the indicated operating point
and supply voltage

Solution:

16
Problem-15
Determine the levels of RC, RE, R1, and R2 for the network of Fig. below for the operating point
indicated.

Solution:

17
Problem-16
Determine VCE for the voltage-divider bias configuration of Fig. below.

Solution:
𝛽𝑅𝐸 ≥ 10 𝑅2
Results in
(120)(1.1 𝑘Ω) ≥ 10(10𝑘Ω)
132𝑘Ω ≥ 100 𝑘Ω (𝑠𝑎𝑡𝑖𝑠𝑓𝑖𝑒𝑑)
Solving for VB, we have
𝑅2 𝑉𝐶𝐶 (10 𝑘Ω) (−18 𝑉)
𝑉𝐵 = = = −3.16 𝑉
𝑅1 + 𝑅2 47 𝑘Ω + 10 𝑘Ω
Note the similarity in format of the equation with the resulting negative voltage for VB.
Applying Kirchhoff’s voltage law around the base–emitter loop yields
+𝑉𝐵 − 𝑉𝐵𝐸 − 𝑉𝐸 = 0
𝑉𝐸 = 𝑉𝐵 − 𝑉𝐵𝐸
And Substituting values, we obtain
𝑉𝐸 = −3.16 𝑉 − (−0.7) = −2.46 𝑉
Note in the equation above that the standard single- and double-subscript notation is
employed. For an npn transistor the equation VE = VB - VBE would be exactly the same. The
only difference surfaces when the values are substituted. The current is
𝑉𝐸 2.46 𝑉
𝐼𝐸 = = = 2.24 𝑚𝐴
𝑅𝐸 1.1 𝑘Ω

For the collector–emitter loop,


−𝐼𝐸 𝑅𝐸 + 𝑉𝐶𝐸 − 𝐼𝐶 𝑅𝐶 + 𝑉𝐶𝐶 = 0
Substituting IE ≈ IC and gathering terms, we have
VCE = -VCC + IC (RC + RE)
Substituting values gives
VCE = -18 V + (2.24 mA) (2.4 kΩ + 1.1 kΩ)
= -18 V + 7.84 V
= -10.16 V

18

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