Answers to RPH/Set-1

1 E
1. (b) In short dipole, E ∝ ⇒E→
r 3 8
2. (c) +Q –Q
r

Force between two charges

2
1 Q
F=
4 0 r 2
When a third charge +Q is placed between the two charges as shown below
+Q +Q FOA –Q
A O FOB B
r/2 r/2

Then, force on this charge,

F′ = FOA + FOB [towards – Q]
2 2
1 Q 1 Q
= 
4 0 (r/2) 2 4 0 (r/2) 2
2
2Q 2 1 Q
 8> H
1
=
4 0 (r/2) 2 4 0 r 2
= 8F
3. (d)

4. (b) Half angular width of the central maximum is given by:


sin q =
d
Here, l = 1000 × 10 m, d = 2 × 10–6 m
–9

1000 × 10 –9
\ sin q =
2 × 10 –6
= 500 × 10–3
= 0.5
or q = 30°
5. (a) Given: Initially, C1 = 2 C and C2 = C
q1 = 2 CV and q2 = CV
When the capacitor of capacity 'C' is filled with dielectric of constant ‘K’, then
C′2 = KC
\ New charge on C1
Q1 = 2C V′ and new charge on C2, Q2 = C′2V′

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 As charge is conserved,
\
q1 + q2 = Q1 + Q2
or 2CV + CV = 2CV′ + C′2V′
or 3CV = 2CV′ + 2KCV′
3V
or V′ =
K +2
6. (d)
7. (a)
8. (d) We know, that

– 13.6 Z 2
En = eV
n2
For n = 1 and Z = 4

–13.6
En = – (4)2 = 217.6 eV
2
(1)

9. (a) By Snell’s law,

sin i
m=
sin r
sin 60°
3 =
sin r
sin 60° 3 2
or sin r = =
3 3
1
or sin r =
2
or sin r = sin 30°

or r = 30°

10. (b)
11. (c)
12. (a)
13. (d)
14. (d)
15. (b)
16. (c)

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 hc
17. Using, E=

6.63 × 10 –34 × 3 × 108
= = 6.0 × 10–19 J
–9
330 × 10

6.0 × 10 –19
In eV, E =
= 3.76 eV
1.6 × 10 –19

 3.7 eV < 4.2 eV i.e., less than work function so, no photoelectric emission will take place.

18. We know that


I = 4 I0 cos2
2

Given: Path difference, Dx =
4
2

 Df = × Dx

2  
= × =
 4 2

\
I = 4I0 cos2
2

= 4I0 cos2 = 2I0
4

Or

For minima, d sin q1 = nl1

For first minimum, d sin q1 = (1)l1

1
or sin q1 =
d

For first maximum,

3
d sin q2 = l
2 2
3d2
or sin q2 =
2d

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 These above two will coincide if

q1 = q2

or sin q1 = sin q2

1 32
or =
d 2d
2 2
or l2 = l = × 660 nm
3 1 3
= 440 nm

19. Given: I = 18 A
R = 1 cm = 10–2 m
B1 = 8 × 10–3 T
r = 0.6 mm = 0.6 × 10–3 m
m0 = 4p × 10–7 Tm/A
\ Magnetic field due to current carrying wire
0I 4 × 10 –7 × 18
B2 = =
2r 2× 0.6 × 10 –3
= 60 × 10–4 = 6 × 10–3 T
Now, Magnitude of resultant magnetic field
B= B12 + B 22
= (8 × 10 –3) 2 + (6 × 10 –3) 2
= 10 × 10–3
= 10–2 T

20. Given fusion reaction:

2 2 3
1H + 1H → 2He + n

\ Energy released = Final Binding Energy – Initial Binding Energy

= 7.73 – 2 × 2.23
= 7.73 – 4.46
= 3.27 MeV
21. Kinetic energy in the first excited state of hydrogen atom
EK = 3.4 eV
= 3.4 × 1.6 × 10–19 J

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 de Broglie wavelength,
h
l=
2 m EK
6.63 × 10 –34
=
2× 9.1 × 10 –31 × 3.4 × 1.6 × 10 –19
= 0.67 × 10–9 m

= 0.67 nm
22. For forward biasing
DV = 2.4 – 2.0
= 0.4 V
and DI = 80 – 60
= 20 mA
= 20 × 10–3 A
\ Forward bias resistance,
V
rf =
I
0.4
= = 20 W
20 × 10 –3
For reverse biasing,
DV = – 2 – 0 = – 2 V
and DI = – 0.25 – 0
= – 0.25 mA
\ Reverse bias resistance,
V
rr =
I
–2
=
– 0.25 × 10 –6
= 8 × 106 W
23. Let after connecting in parallel with an uncharged capacitor
Charge on first capacitor = Q1
and charge on second capacitor = Q2
then total charge, Q = Q1 + Q2…(i)
and the common potential attained = V = V1 = V2
Q1 Q2
\ = …(ii)
C1 C2
C1
or Q=e + 1o Q2 [Using (i) and (ii)]
C2
QC2
\
Q2 = …(iii)
C1 + C2

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 QC1
and Q1 = …(iv)
C1 + C2
Q
Now, V1 = V2 = …(v)
C1 + C2
Q2
=  [From (iii)]
C2
Q1
=  [From (iv)]
C1
Final energy,
1 1
Uf = C V 2 + C2V22
2 1 1 2
1
= (C1 + C2)V22[ V1 = V2]
2
2
1 Q
= (C1 + C2)  [Using (v)]
2 (C1 + C2) 2

Q2
=
2 (C1 + C2)
Whereas initial energy,

Q2
Ui =
2C1

\ Loss in energy, DU = Ui – Uf

Q2 Q2
= 
2C1 2 (C1  C2)

Q2 1 1
= <C  C C F
2 1 1 2

Q 2 C1  C2  C1
= > H
2 C1 (C1  C2)

Q 2 C2
=
2C1 (C1 + C2)
The lost energy appears in the form of heat.
24. According to Huygen’s principle, “the overall effect at any point is the result of the combined
contributions of all wavelets taking into account their respective phase differences.

Physics – 12

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 The point ‘O’ is maxima because contribution from each half of the slit S1S2 is in phase. i.e.,
the path difference is zero.

S1

a O
S

S2

D
Slit

Screen

At point ‘P’,
(i) If S2P – S1P = nl
⇒ the point ‘P’ would be minima

(ii) If S2P – S1P = (2n + 1)
2
⇒ the point would be maxima but with decreasing intensity.
2D
The width of central maxima =
a
When the width of the slit is doubled the original width, the size of central maxima will
be reduced to half and intensity will become four times.
25. Two important processes occuring during the formation of a p-n junction are
(i) diffusion
(ii) drift
Electron diffusion
Electron drift

p n

Electron

Hole

Hole diffusion
Hole drift

(i) Diffusion: In an n-type semiconductor, the concentration of electrons is significantly

higher than that of holes, whereas in a p-type semiconductor, the concentration of holes
is much higher than that of electrons.

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 When p-n junction is formed, the concentration gradient causes holes to diffuse from
the p-side to the n-side and electrons to diffuse from the n-side to the p-side.
This movement of charge carriers results in a diffusion current across the junction.
(ii) Drift: The movement of charge carriers due to the electric field is known as drift. Across
the junction, a built-in potential barrier creates an electric field directed from the n-region
to the p-region. This field causes electrons on the p-side of the junction to move towards
n-side, while hole in n-side of the junction to move towards the p-side.
As a result, drift current is generated, which flows in the opposite direction to the diffusion
current.
V0 potential barrier

P N

Depletion layer

26. (i) The condition for a beam of charged particles to pass undeflected through a region of
mutually perpendicular electric and magnetic fields is that electric and magnetic forces
on the beam must be equal in magnitude and opposite in direction.
i.e., Fe = Fm
or eE = evB
E
or v=
B
Given that, E = 50 kV/m = 50 × 103 V/m
B = 100 mT = 100 × 10–3 T
50 × 10 +3
\ v= = 5 × 105 m/s
–3
100 × 10
(ii) The beam of protons strikes the target with constant velocity and hence no force is
exerted on the targed.
But if the beam comes to rest, it exerts a force on the target, equal to rate of change of
linear momentum of the beam. i.e.,
p m (0 – v)  mvi  mvi
F =  = 
t q i q ne
Where n is the number of protons striking the target per second.
Negative sign shows that force is opposite in direction.

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 27. Given that, A = 60°, m = 3
and AQ = AR
⇒ QR || BC

⇒ q is angle of minimum deviation

A  
sin c m
2
Using, m=
A
sin c m
2
60  
sin c m
2
3 =
60
sin c m
2
60  
sin c m
2
3 =
1
2

60°  
= sin c m
3
or
2 2
60  
or sin 60° = sin c m
2
60  
or 60° =
2
or q = 60°

28. (a) We know that,

Electric field due to a long straight charged wire at a distance ‘r’ is given by

E= …(i)
2 0 r
The essential centripetal force for circular motion is provided by the electrostatic force.
mv 2
i.e., eE = +
r
 mv 2 +
From (i), ed n= v
2 0 r r +
1 e
or mv2 = +
2 4 0
e–
\
KE of the electron, r
+
1 e
K= mv2 =
2 4 0 +

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 KE
(b)

l
Graph of KE vs l
Or
We know that the electric flux through the surface,
f = E .S
\ Electric flux through left surface of the cylinder,
fL = ES cos 180°
= – ES
= – (50 x) (s)
= – 50 (1) × 25 × 10–4[ x = 1 m]
= – 1250 × 10–4
= – 0.125 Nm2C–1
Now, flux through the right surface,
fR = ES cos 0°
= ES
= – (50 x) (s)
= (50 × 2) (25 × 10–4)[Here, x = 2 m]
= 2500 × 10–4
= 0.250 Nm2 C–1
Net flux through the cylinder,

f = fL + fR

= – 0.125 + 0.250 = 0.125 Nm2C–1

(ii) Charge enclosed by the cylinder

q
f=
0
or q = fe0

= 0.125 × 8.85 × 10–12

= 1.107 × 10–12 C

29. (i) (c) (ii) (a) (iii) (c) (iv) (d)

Or (iv) (a)

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 30. (i) (c) (ii) (b) (iii) (c) (iv) (c)
Or (iv) (b)
31. Resistivity: It is a fundamental property of a material that quantifies, how strongly it resists
the flow of electric current. It is the measure of a material’s opposition to the flow of electric
current through a unit length of the material for a given cross-sectional area.
SI unit: Ohm-meter (W-m)
Graphs showing the variation of resistivity with temperature.
(i) For copper (ii) For nichrome
Resistivity

Resistivity
Temperature
O Temperature

(iii) For semiconductor

Resistivity

O Temperature

Variation of Resistivity with temperatue:

The resistivity of materials varies with temperature, which can be expressed as:
For conductor (like copper)
r(T) = r0 [1 + a (T – T0)]
Where:
• r0 is the resistivity at a reference temperature T0 (often 20° C)
• a is the temperature coefficient of resistivity (positive for conductors)
• T is the temperature (in °C)
For semiconductors:
r(T) = r0e–Eg/kT
Where:
• Eg is the energy gap
• k is the Boltzmann’s constant
• T is the temperature in Kelvin
Behaviour of Different Materials:
(i) Copper (Conductor): As temperature increases, resistivity increases due to the
increased scattering of conduction electrons by lattice vibrations.
(ii) Nichrome (Alloy): Alloys like Nichrome exhibit a relatively small change in resistivity
with temperature, making them useful in applications requiring stable resistivity
across temperature variations.

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 (iii) Semiconductors: For semiconductors resistivity decreases as temperature increases.
This is because increasing temperature excites more charge carriers across the energy
gap, thus reducing resistivity.
Or
(a) When the resistor R is connected across the cell, the circuit forms a closed loop. The emf
of the cell E, is the total energy supplied per unit charge, while the terminal voltage V
is the potential difference across the external resistor, which is less than the EMF due to
the internal resistance ‘r’ of the cell.
V

e r
Cell
I

According to Ohm’s law, the current I flowing in the circuit is given by

E
I=
R+ r

The terminal voltage V measured across the external resistor is related to the current I
by,
V = IR

Substitute the expression for I into the equation for V.

E
V=c mR
R+ r
Simplifying, we get
ER
V=
R+ r
Now, solving in terms of E, V and R for r, we get
VR + Vr = ER

or Vr = (E – V)R

E
or r=c − 1m R
V
(b) Let two cells of EMFs e1 and e2 with their respective internal resistances r1 and r2 are
connected in series, as shown below:

I r1 r2 I
A e1 r B e2 r C

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 Terminal potential difference between A and B,
VAB = VA – VB= e1 – Ir1…(i)
and terminal potential differences between B and C
VBC = VB – VC = e2 – Ir2…(ii)
And terminal potential difference between ‘A’ and ‘C’
V = VA – VC

= (VA – VB) + (VB – VC)

= (e1 – Ir1) + (e2 – Ir2) [from equations (i) and (ii)]
= (e1 + e2) – I (r1 +r2)…(iii)
If the above combination is replaced by a single cell of equivalent emf ‘e’ and internal
resistance ‘r’, as shown below
eeq r I
A C

Terminal potential difference between ‘A’ and ‘C’ is given by

V = eeq – Ireq…(iv)
Comparing equations (iii) and (iv), we get
eeq = e1 + e2
and req = r1 + r2
32. (a) Impedance is the total opposition that an alternating current (AC) circuit presents to the
flow of electric current.
L C
R
(b)
VL VC VR

V = V0 sin wt

Given AC input to the circuit is

V = V0 sin wt
Now potential across inductor,
VL = IXL…(i)
Potential across capacitor,
VC = IXC…(ii)
and potential across resistor
VR = IR …(iii)

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 The phasor diagrams,
VL

(VL– VC)

V
q

I VR

VC

From the phasor diagram shown above, it is clear that,

V= (VL  VC) 2  V R2
Using equations (i), (ii), and (iii), we get
V= (IX L  IXC) 2  (IR) 2

= I (X L  XC) 2  R 2
V
or I=
(X L  XC) 2  R 2
V
=
Z
Where Z = (X L  XC) 2  R 2 , known as impedance of the LCR ac circuit.
Now, from phasor diagram, it is clear that,

VL  VC IX L  IXC
tan f = 
VR IR
X L − XC
or f = tan–1
R
For resonance,
XL = XC
1
or wL =
C
1
or w2 =
LC
1
or w=
LC

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 1
or 2pn =
LC
1
or n=
2 LC
This is the expression for resonant frequency.

Or
(a) Given: L = 100 mH = 100 × 10–3 H = 0.1 H

R = 100 W

XC = 200 W

Vrms = 150 2
500
and n= HZ

XL = wL = 2pnL

= 2p b l × 0.1 = 100 W
500

Now, Z= (X L – XC) 2 + R 2

= (100 – 200) 2 + (100) 2 = 100 2 + 100 2 = 100 2W

Vrms
\ Irms =
Z
150 2
= = 1.5 A
100 2
\ Current flowing in the circuit = 1.5 A
Now power dissipated in the resistor,
P = I2rms R
= (1.5)2 × 100
= 2.25 × 100
= 225 W
(b) The material used for the core of a transformer should possess the following two characteristic
properties:
(i) High magnetic permeability
(ii) Low hysteresis loss and low eddy current loss.

Physics – 12

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 33. Graph between angle of deviation vs angle of incidence:

Angle of deviation (d)

dm

i1 i2
Angle of incidence (i)

Deviation for refractive index of the prism:

A

N1
M d

Q i-r1 e-r2 R
i e
r1 r2

O S
B C
P
In DMQR, (i – r1) + (e – r2) = d [exterior angle property of a triangle]
or (i + e) – (r1 + r2) = d…(i)
In quadrilateral, AQOR,
∠A + ∠Q + ∠O + ∠R = 360°
∠A + 90° + ∠O + 90° = 360°
or ∠A + ∠O = 180° …(ii)

In DQOR,

r1 + r2 + ∠O = 180° …(iii)

From equations (ii) and (iii), we get

∠A + ∠O = r1 + r2 + ∠O

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or r1 + r2 = ∠A …(iv)

Using this in equation (i), we get

i+e–A=d

or i + e = A + d …(v)

For minimum deviation, i1 = e = i (say)

and r1 = r2 = r (say)

Also refracted ray QR becomes parallel to the base BC of the prism.

\ equations (iv) and (v) can be written as

2r = A

or r = A/2

and i + i = A + dm

A  m
or i=
2

Now, Snell’s law,

sin i
m=
sin r
A  m
sin d n
2
\
m=
A
sin c m
2

Or
m1 M m2
i
r

a g b
O P N c I

–u R
v

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(17)
 By Snell’s law,
sin i 2
=
sin r 1
For small angles,
i 2
=
r 1
or m1 i = m2 r…(i)
In DMOC,
a + g = i…(ii)
and In DMCI,
b+r=g
or r = g – b…(iii)
Using equations (ii) and (iii) in equatins (i), we get
m1 (a + g) = m2 (g – b)…(iv)
Now in right DMNO,
MN
a ≈ tan a =
NO
MN MN
≈ = …(v)
PO −u
In right DMNI,
MN
b ≈ tan b =
NI
MN MN
= = …(vi)
PI v
In right DMNC,
MN
g ≈ tan g =
NC
MN MN
≈ = …(vii)
PC R
Using equations, (v), (vi) and (vii) in equation (iv), we get
MN MN MN MN
m1 c  m = m2 c − m
u R R v
1 1 2 2
or  = 
 R R v
 2 1  2  1
or  =
v R R
The focal length of the convex lens increases when it is immersed in water.

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