Physics Grade 10 - Unit 5
Physics Grade 10 - Unit 5
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- X- plates (x1 and x2) deflects the electron beam horizontally from side to side.
A1 A2
Y1 X1
Spot
grid vaccum
1. Why do the emitted electrons stay near the cathode instead of moving further fram it?
2. What is meant by a thermionic emission?
3. State two ways of increasing the brightness of the electron beam in CRT?
4. The following are parts of a cathode tube
A. X, plates B. Y- plates C. Anode
D. Cathode E. Screen
Which of these
1. Accelerates electrons?
2. deflects electron beam horizontally?
3. deflects electron beam vertically?
4. has a fluorescent material?
5. the emits election?
5. Increasing the anode voltage of a diode value increases the anode current. Does this
mean that the resistance of a thermionic diode obey ohm’s law?
6. Which number indicates the cathode of the vaccum diode shown bellow?
A. 2 C. 4 1
B. 1 D. 3
2
4
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7. Which part of cathode ray tube is responsible for the vertical displacement of electron beam?
A. The control gride C. the electron gun
B. The deflection plates D. the flvorescent screen
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8. The emission of electrons from the hot metal in diode valve is known as
A. Electron emission C. hot electron emission
B. Thermionic emission D. vacaum value emission
9. Which of the following statements about semiconductor materials is correct
A. The majority charge carries in a p – type semiconductors are electrons
B. Both p – type and n – type semi conductors are electrically neutral
C. The p – type is a positively charged semi conductor
D. The n – type is one gatively charged semiconductor
10. What happens when a pn-junction is forward biases?
A. The deflection layer size increases
B. Current can not flow through the diode
C. The deflection layer decreases
D. Electrons flow from p – type to n- type
11. Which one of the following is not apart of thormionic diode value
A. Heater C. anode
B. Cathode D. deflector
12. A semiconductor produced artificially by addition of impurities is called
A. Intrinsic semiconductor Left Right
B. Extrinsic semiconductor P-type
C. Puresemiconductor
D. All of the above
A. a tranasformer C. an electroscope
B. a dyode D. cathode
14. inthermionic diode valves which one of the following produces free electrons when heated?
A. Value C. diode
B. Anode D. cathode
15. What types of semi conductor results by droping silicon with trivalent atoms
A. N – type semiconductor
B. Intrinsic semiconsuctor
C. Super conductor
D. P-type semiconductor
16. What particles are emitted in a thermionic emission?
A. Ions C. electrons
B. Protons D. light
17. An n- type semi conductor will be obtained by adding___________ impurity to silicon?
A. Trivalent C. tetravalent
B. Penta valent D. monoatomic
18. Doping of a semiconductor is basically a process of
A. Purifying semiconductor materials
B. Adding impurities to a semiconductor material
C. Removing electrons from a semiconductor material
D. None of above
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19. Which of the following does not gave to a properties of a p – type silicon doctor when used as
a doping agent
A. Aluminum C. Boron
B. Gallium D. antimony
20. The diagram bellow shows a circuit with a battery applying a potential difference a cross ap –
type semiconductor
A. forward biased
B. reverse biased
+ -
C. Unknown
23. What happens when apron-junction diode is reverse to inset?
A. The deflection layer size increase
B. Current cannot flow through the dlude
C. Holes move from p-type to n-type material
D. Both A and B
24. In the forward based condition
A. the p-side potential is + Ve and n-side – ve
B. the p-side potential is - Ve and n-side is + ve
C. the potential of both the p-side and n-side is + ve
D. the potential of both the p-side and n-side is – ve
25. Silicon is doped with phosphorus will the impurity atoms be donors or
electors? Will the semi-conductor conduct with holes or electrons?
26. Greater a truth table for both a NAND, AND, OR, NOT and NOR Gate?
27. Please draw the circuit diagrams for the NAND and MOR gate 5 marking
inputs and outputs.
28. For the fig show bellow write down the truth table for A,B,C and F
A
F 4
And
B
Not
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