CHRIST ACADEMY CISCE

KOPARKHAIRANE, NAVI MUMBAI

SECOND SEMESTER EXAMINATION 2024-25
PHYSICS
Name: ANSWER KEY Date: 04-11-24
Std: XII Div: Time: 3 Hrs.
Roll no: Marks: 70
• Candidates are allowed additional 15 minutes for only reading the paper.
• They must NOT start writing during this time.
• Answer all questions in Section A, Section B, Section C and Section D.
• Section – A consists of one question having sub-parts of one mark each.
• Section – B consists of seven questions of two marks each.
• Section – C consists of nine questions of three marks each, and
• Section – D consists of three questions of five marks each.
• Internal choices have been provided in one question each in Section B,Section C and Section D.
• The intended marks for questions or parts of questions are given in brackets [ ].
SECTION A – 14 MARKS
Question 1
A. Choose the correct answer from the following [7]
i) An ideal Moving Coil Galvanometer (MCG) cannot be used as an ammeter to measure the value
of current in a given circuit. The following reasons are:
(i) it has a high current sensitivity value.
(ii) for a minimal amount of current the galvanometer deflection will be maximum.
(iii) it has a low least count.
a) (i) and (ii) b) (i) and (iii) c) (ii) and (iii) d) (i), (ii), and (iii)
ii) Lorenz's force is:
a) the vector sum of electrostatic and magnetic force acting on a moving charged particle
b) the sum of electrostatic and magnetic force acting on a moving charged particle.
c) electrostatic force acting on a charged particle only
d) the magnetic force acting on a moving charged particle only.
iii) A charged particle is moving with velocity v in a magnetic field of induction B. The force on the
particle will be maximum when:
a) v and B are at an angle of 45°
b) v and B are perpendicular
c) v and B are in the same direction i.e., at an angle of 00 .
d) v and B are in opposite directions i.e., at an angle of 1800 .
iv) An ideal PN junction diode offers:
a) zero resistance in forward as well as reverse bias.
b) infinite resistance in forward as well as reverse bias
c) zero resistance in forward, but infinite resistance in reverse bias.
d) infinite resistance in forward, but zero resistance in reverse bias.

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v) The diagram below shows the equipotential surfaces in a given region of space. The potential
difference between any two consecutive surfaces is equal. There are five points marked in the
space, namely A, B, C, D, and E as shown.

Assertion (A): The electric field strength is greatest at point A and reduces from A to E.
Reason (R): The potential difference in a region of space is equal to the negative electric field
gradient in that region.
a) Both Assertion and Reason are true, and Reason is the correct explanation for Assertion
b) Both Assertion and Reason are true, but Reason is not the correct explanation for Assertion. c)
c) Assertion is true, and Reason is false.
d) Both Assertion and Reason are false.
vi) A non-conducting sphere A, attached to an insulated handle is given a
charge +q. It is brought near a non-conducting sphere B, having a
charge +Q, placed on a platform attached to a spring and placed at a
vertical distance R from sphere B. The spring compresses by a distance d1.
Now, if sphere B is replaced by a similar conducting sphere and sphere A is
brought vertically at the same distance from B, without touching it, the spring
compresses by a distance d2.
Choose the correct option based on the above situation and diagram:
a) 𝑑2 > 𝑑1 b) 𝑑2 < 𝑑1
c) 𝑑2 = 𝑑1 d) insufficient information to compare 𝑑2 and 𝑑1.
B. Answer the following questions briefly [7]
i) The given graph shows the variation of charge on plates (q) versus the potential difference (V)
between the plates of two capacitors C1 and C2. Both the capacitors have the same plate area but
the plate separation of C1 is twice that of C2. Which graph corresponds to C1?

ANS : Slope = qV = C. The higher slope corresponds to higher capacitance. Also, C ∝ 1 /𝑑 . The
lesser the value of 'd', the more the capacitance. Hence, graph 'B' corresponds to 'C1'.
ii) Write the unit of electric potential in terms of the basic units of SI system.
ANS : 1V = Kg. m2 A-1 s-3
iii) In the X - Y plane, a magnetic field of 4 T is applied along the Y-axis. Calculate the magnetic force
on a proton, if it moves at 3 × 106 m/s along the +Y-axis.
ANS : ZERO
iv) What is the use of Gaussian Surface?
ANS : It is used to easily compute the electric field intensities due to certain charge
systems or charged bodies ; where use of coulomb law is quite difficult.
v)Name the device used for measuring internal resistance of a secondary cell. Potentoimeter

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vi)A 10 m long potentiometer wire carries a steady current. A standard cell of emf 1.018 V is
balanced against a length of 254.5 cm if the wire. What is potential gradient across the
potentiometer wire?
ANS : E = K l , K = E/l = 1.018 / 254.5 = 4 x 10-3 V / cm = 0.4 V/m
vii)Define SI unit of capacitance. Write the formula for equivalent capacitance when two
capacitances are connected in series.
ANS : SI UNIT IS FARAD .1/ Ceq = 1/C1 + 1/C2

SECTION B – 14 MARKS
Question 2 [2]
A long straight wire in the horizontal plane carries a current of 50 A in the north-to-south
direction. Give the magnitude and direction of ‘B’ at a point 2.5 m east of the wire.
ANS : I = 50 A, r = 2.5 m B = µ0 4π 2I r = 4π× 10−7× 50 2π× 2.5 = 4 × 10 T −6 Applying the right-
hand thumb rule, we find the magnetic field will be perpendicular outward at a point 2.5 m east
of the power line.
ANS :

OR
How does the capacitance C modify in each of the following cases?
(a) The dielectric slab covers half the distance of separation between the two plates.
(b) The whole space between the plates is filled with the dielectric.
ANS :

Question 3 [2]
Figure 5 below are two long, parallel wires carrying current in the same direction such that
I1 < I2.
(i) In which direction will wire I1 move?
(ii) If the direction of the current I2 is reversed, in which direction will the
wire I1 move now?

Question 4 [2]
i)Define equipotential surface.
ii)Can two equipotential surfaces intersect?
ANS : i) The surface, the locus of all points at the same potential, is known as
the equipotential surface.
ii) No

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Question 5 [2]
State Ampere’s circuital law.
ANS : Ampere's circuit law state that the line integral of the magnetic field r around a
closed path is equal to the product of magnetic permeability of that space and the current
through the area bounded by the path .
Question 6 [2]
Define electrostatic potential at a point. Is it scalar or vector.
ANS : Electrostatic potential at a point is defined as the amount of work done in bringing
a unit positive charge from infinity to that point, without any acceleration. It is a scalar
quantity, as it has magnitude but no direction
Question 7 [2]

(i) Name the type of mirror used here.

ANS :concave
(ii) What is its focal length?
ANS : 20cm

Question 8 [2]
i) What is meant by doping ?
ii) To convert pure semiconductor into n-type semiconductor, what type of impurity is added
to it.
ANS : i) The conductivity of metal is increased by adding an appropriate amount of
suitable
impurity. This process is known as doping.
ii) For n-type semiconductor pentavalent impurity is added. For e.g., antimony,
arsenic etc
SECTION C – 27 MARKS
Question 9 [3]
A student starts working on a problem on Gauss' theorem to calculate the flux and hence the
electric field at a given point due to a system of discreet charges. The teacher gives him certain
instructions and the student responds to each instruction as per her understanding of the
concept. State whether the student's response is correct or incorrect. Give a reason for your
answer.
(a) Examiner: Draw a Gaussian surface for the given system of charges.
Student: Draws a symmetric surface passing through the point at which the electric field is
to be calculated.
(b)Examiner: Suggest a way to double the flux through the given surface.
Student: Doubles the surface area of the Gaussian surface.
(c) Examiner: Calculate the electric flux of a point charge of 2 µC, placed 5 cm above the centre
of a square plate of side 10 cm, through the given plate.
Student: As the charge is not enclosed by the surface, the flux through the surface is zero.
ANS :

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Question 10
For the given electrical circuit, calculate the current through each branch using Kirchhoff's laws.
[3]

ANS :

OR
A lens of focal length f is divided into two equal parts and then these parts are put in a
combination as shown in Figure 8 below.
(i) What is the focal length of L1?
(ii) What is the focal length of the final combination?

ANS :

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Question 11
Draw separate energy-level bands for conductors, semiconductors and insulators and label
each of them to illustrate the behavior of (i) conductor (ii) a pure semiconductor and (iii) an
insulator [3]
ANS :

Question 12 [3]
With reference to a semiconductor diode what is meant by (i) forward bias (ii) reverse bias ,
(iii) depletion region ?
ANS :

Question 13 [3]
An alpha particle is made to move through two plates
10 cm apart. The speed with which it enters the gap in the
first plate is 2.5×106 m s−1 . The particle exits the second
plate with a velocity of 5×106 m s−1 .
(a) Calculate the potential difference between the
plates.
(b) Calculate the electric field between the plates.
(c) Name a device where this principle is used.

ANS :

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Question 14 [3]
The computer’s keyboards make use of capacitors at the base of their keys (as shown in the
diagram).

Each key is connected to a movable plate, which represents one side of the capacitor. The fixed
plate on the keyboard's bottom represents the capacitor's other side. External electronic circuits
recognize each key in its capacitance when pressed.
(a) How would the capacitance of the capacitor so formed change, when the key is pressed?
(b) If the plate area is 2 cm2 and the plate separation is 1 mm, calculate the charge density on the
Plate, if the potential difference between the plates is 3 V. The plates are separated by a
dielectric of K = 5.
(c) Sketch a graph showing the variation of electric field E between the plates with distance 'd'
from the first plate till the second plate.
ANS :

Question 15 [3]
The charge q1 = 3 µC, q2 = 4 µC and q3 = 7 µC are placed on the circumference of a circle of
radius 1.0m as shown in the fig. What is the value of charge q4 placed on the same circle if the
potential at the centre, VC = 0 ?

ANS :

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Question 16 [3]
Calculate the coulombian force between a proton and an electron separated by 0.8 x 10 m
-15

ANS :

Question 17 [3]

Obtain an expression for intensity of electric field in end on position i.e. axial position of an
electric dipole.
ANS :

SECTION D – 15 MARKS
Question 18 [5]
Electrostatic precipitators: Electrostatic precipitators are devices used to remove particles,
such as dust and ash, from a flowing gas using the force of an induced electrostatic charge. It
consists of two sets of electrodes: positive and negative. The negative electrodes are in the
form of a wire mesh, and the positive electrodes are plates. These electrodes are vertically
placed and alternate to each other. High Direct Current (DC) voltage is fed to the discharge
electrodes, generating a negative electric field around them. The gas-borne particles such as
ash are ionised by the corona effect. When the polluted gas passes through the electric field, the
particles become charged and are attracted to oppositely charged collector plates, where they
adhere until they are removed.
Answer the following questions. (a) Name any two
electrostatic processes involved in the working of
an electrostatic precipitator. (b) If the medium
between the mesh and the plates is filled with a
dielectric medium of dielectric constant K = 10,
what will happen to the efficiency of working of
the device? (c) What is the strength of the electric

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 field between two parallel conducting plates separated by 2 cm and having a potential
difference (voltage) between them of 1.50 × 104 V? (d) Name any other device used in day-to-
day life, based on the principle of the electrostatic precipitator
ANS :

Question 19 [5]
A solar cell is a junction diode. A very thin layer of p-type semiconductor is grown on a
relatively thicker n-type semiconductor, having a few finer electrodes on the top of the ptype
semiconductor layer. These electrodes do not obstruct light from reaching the thin p-type
layer. Just below the p-type layer, there is a p-n junction. We also provide a current-collecting
electrode at the bottom of the n-type layer. Similarly, the holes in the depletion can quickly
come to the p-type side of the junction. Once, the newly created free electrons come to the n-
type side, cannot further cross the junction because of the barrier potential of the junction.
Similarly, the newly created holes once come to the p-type side cannot further cross the
junction because of the same barrier potential of the junction. As the concentration of electrons
becomes higher on one side, the p-n junction will behave like a small battery cell. A voltage is
set up which is known as photovoltage. If we connect a small load across the junction, there
will be a tiny current flowing through it. The IV characteristic of solar cells is given below,
Answer the following questions.
(i) Is the principle of a solar cell the same as that of a
photodiode?
(ii) What is the suitable band gap of the semiconductors
used as solar cell materials?
(a) 0 to 0.5 eV (b) 0.5 to 1 eV (c) 1.1 to 2 eV (d) 0 to 0.8 eV
(iii) What does V0 represent in the characteristic curve?
(iv) Is Imax independent of the intensity of incident radiation?
(v) Why do holes in the depletion region quickly come to the p-side?
ANS :

OR

ANS: Extrinsic semiconductors are materials that have been intentionally doped with
impurities to alter their electrical properties. The doping process introduces additional
charge carriers, either electrons or holes, which enhance the semiconductor's
conductivity.
Types of Impurities:

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 1. Donor Impurities:
o Donor impurities are elements that have more valence electrons than the
semiconductor material (usually silicon or germanium, which have four
valence electrons).
o Common donor impurities include phosphorus (which has five valence
electrons) and arsenic.
o When these impurities are added, they donate extra electrons to the
conduction band of the semiconductor, creating n-type semiconductors,
where the majority carriers are electrons.
2. Acceptor Impurities:
o Acceptor impurities are elements with fewer valence electrons than the
semiconductor.
o Common acceptor impurities include boron (which has three valence
electrons).
o When these impurities are introduced, they create holes (missing electrons)
in the semiconductor's valence band, resulting in p-type semiconductors,
where the majority carriers are holes.

ii) Pure Si at 300 K has equal electron (ne) and hole (nh) concentrations of 1.5 x 1016 m-3
doping by indium increases nh to 4.5 x 1022 m-. Calculate ne in the doped Si. [2]
ANS :

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Question 20
(i) Two long, parallel wire are placed at a distance of 16 cm from each other in air. Each wire
has a current of 4 A. Calculate the field B at midpoint between them when the currents in
them are (a) in same direction (b) in opposite direction. [3]
ANS : (a) zero (b) 2 x 10-5 T

(ii) For driving a current of 3 A for 5 minutes in an electric circuit, 1350 J of work is to be done.
Find emf of the source in the circuit.

ANS : E = W / q = 1350 / 900 = 1.50 V

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