Numerical Questions from Unit-1 Example-1 ‘The mobility of free electrons and holes in pure germanium are 3800 and 1800 cm? /V-s respectively. The corresponding values for pure silicon are 1300 and S00 em*/V-s, respectively. Determine the values of conductivity for both germanium and silicon. Assume n, = 2.5 x 10" em for germanium and 5 X 10" em’ for silicon at room temperature. Solution (i) The intrinsic conductivity for germanium, grb, * My) = (1.602 « 10°) (2.5 x 10!) (3800 + 1800) = 0.0224 Sfem (ii) The intrinsic conductivity for silicon, 1 = 40 (by + Hy) = (1.602 x 10") (1.5 x 10") (1300 + 500) = 4.32 x 10°S/em Example -2 In an N-type semiconductor, the Fermi level is 0.3 eV below the conduction level at a room temperature of 300 K. If the temperature is increased to 360 K, determine the new position of the Fermi level. Solution Ne Therefore, (Be~ By) = kT In 5 Ne ALT= 300 K, 03 = 300k In We o Ne Similarly, Be~ Ep = 360k n= 2) > Eqn. (2) divided by Eqn. (1) gives Therefore, 0.36 eV Hence, the new position of the Fermi level lies 0.36 eV below the conduction level Example -3 Find the conductivity of silicon (a) in intrinsic condition at a room temperature of 300 K, (b) with donor impurity of 1 in 10°, (c) with acceptor impurity of 1 in 5 x 10” and (d) with both the above impurities present simultaneously. Given that n; for: on at 300 K is 1.5 x 10" em, 1, = 1300 em’/V-s, 1, = 500 cm'IV-s, 5x 107,Solution (a) Inintrinsie condition, n = p = n, Hence, = 4 iy * Hy) = (1,602 * 10°") (1.5 x 10!) (1300 + 500) 2 x 10° Siem (b) Number of silicon atoms/em’ = 5 x 10 x10" Hence, Np 108 = 5x10" cm? Further, n=Np ‘Therefore, _ 5 x10") 5x 10!* ‘Thus, p <<. Hence p may be neglected while calculating the conductivity. 46 x 10° em? Hence, © = Nghly = Nplly = (5% 10") (1.602 « 10") (1300) ).104 Sfem, _ 5x10 = Saag? Oem © Ng Further, PHNy PN, _ 5x 10" To ‘Thus, p >> n. Hence 1 may be neglected while calculating the conductivity. Hence, ” = 2.25 x 10° cm> Hence, © = paltp= Nsdup = (10"* x 1,602 x 10°"? x 500) = 0.08 S/em. (@) With both types of impurities present simultaneously, the net acceptor impurity density is, Ni = N4~ Np= 10 —5 x 10!4 = 5x 10" em? Hence, o=Niqu, x 10!) (1.602 x 10°") (500) 04 Sfem. Example -4 A sample of silicon at a given temperature T in intrinsic condition has a resistivity of 25 x 10* Quem. ‘The sample is now doped to the extent of 4 x 10° donor atoms/em* and 10'° acceptor atomsfem?, Find ‘the total conduction current density if an electric field of 4 Viem is applied across the sample. Given that 1, = 1250 em'/V-s, 1), = 475 em?V-s at the given temperature,1 Solution = aM y+ Me) = Seg a 1 ‘Therefore, 1 Gli * Hy) 25 % 104) (1.602 % 10) (1250 + 475) 45 x 10!" em? Net donor density Np (=n) = (4 10! 10") =3x 10cm? PF _ (L45 x 10") 10 ond Hae PR qq 07 10" om Hence, = gir, * PU) = (1.602 x 10°) (3 x 10! x 1250 + 0.7 x 10!° x 475) = 6,532 x 10° Sfem ‘Therefore, total conduction current density, J = OB = 6.532 10° x 4 26.128 x 10° Alem? Example -5 Find the concentration (densities) of holes and electrons in V-type Silicon at 300 K, if the conductivity is, 300 Siem. Also find these values for P-type silicon. Given that for Silicon at 300 K, , = 1.5 x 10'/em', i, = 1300 em'/V-s and 1, = 500 em'/V-s. Solution (a) Concentration in N-type Silicon The conductivity of an N-type Concentration of electrons, 442 x 10! em F ) (1300) (1.5.x 10" oy Hence concentration of holes, p =p =~, = 1.56 x 10° em 1.442 x 10! (b) Concentration in P-type silicon ‘The conductivity of a P-type silicon is o= gpu, Hence, concentration of holes p = on Wy 300 Example -6 ‘A specimen of pure germanium at 300 K has a density of charge carriers 2.5 * 10"/m*. It is doped with donor impurity atoms at the rate of one impurity atom every 106 atoms of germanium. AI impurity atoms ‘are supposed to be ionised. The density of germanium atom is 4.2 x 10” atoms/m’, Calculate the resistivity ‘of the doped germanium if electron mobility is 0.38 m"1V-s.If the Germanium bar is 5 x 10° m long and has a cross sectional arca of (5 x 10°) m?, determine its resistance and the voltage drop across the semiconductor bar fora current of 1 A flowing through it. Solution Density of added impurity atoms is, 42108 = 4.2 x 10” atoms/m* Also, Therefore, Here, as p <<, p may be neglected. Therefore, No Hy $54 « 10° Sim 1 554x108 pk _0392x 1035x108 a «10% 4 kQ Voltage drop, V = RI= 78.4. 10° « 10° = 78.4mV Therefore, resistivity, 0,392 x 10° Q-m Resistance,