Scribd
Upload
373 views6 pages

Set 4 Web Solutions LC

The document contains 8 multiple choice questions from a sample solutions set about semiconductor physics concepts including carrier drift, diffusion, graded impurity distributions, and the Hall effect. The questions assess understanding of key equations and how to calculate properties like carrier concentration, mobility, conductivity, electric field, and current density from given parameters. Hints are provided for some questions to point readers to the relevant equations.

Uploaded by

demos2011
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
373 views6 pages

Set 4 Web Solutions LC

The document contains 8 multiple choice questions from a sample solutions set about semiconductor physics concepts including carrier drift, diffusion, graded impurity distributions, and the Hall effect. The questions assess understanding of key equations and how to calculate properties like carrier concentration, mobility, conductivity, electric field, and current density from given parameters. Hints are provided for some questions to point readers to the relevant equations.

Uploaded by

demos2011
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 6

Sample solutions P3000 LON-CAPA Set 4 ____________________________ 1. Carrier Drift: From Neamen sect. 4.1. A potential difference of 2.

40 V is applied across sample of n-type semiconductor with a length of 0.65 cm. The average electron drift velocity is 7.20103 cm/s. Enter the electron mobility in units of cm^2/(V*s).

Correct, computer gets: 1.95e+03

2. Carrier Drift: From Neamen Sect. 4.1. A perfectly compensated semiconductor is one in which the donor and acceptor impurity concentrations are exactly equal. Assuming complete ionizaton, determine the conductivity, at T=300K, of Germanium in which the impurity concentrations are N_a=N_d=6.651013 cm^-3. Enter your answer in (Ohm*cm)^-1. Assume that this is in the low doping concentration limit for which the carrier mobilities in Germanium are mu_n=3900 cm^2/V*s and mu_p=1900 cm^2/V*s. (For the intrinsic carrier concentration, use the value from table B4 in your text.)

Correct, computer gets: 2.23e-02

Hint: What are the properties of a perfectly compensated semiconductor?

3. Carrier Drift: From Neamen Sect. 4.1. An n-type sample of Silicon has a resistivity of 7.95 Ohm*cm at T=300 K. You can assume that it is in the low doping concentration limit where the electron mobility for Silicon is mu_n=1350 cm^2/(V*s). Determine the donor impurity concentration and enter your answer in cm^-3.

Correct, computer gets: 5.82e+14

4. Carrier Diffusion: From Neamen sect. 4.2. Consider a sample of p-type GaAs at T=300 K. The hole concentration decreases linearly with distance x from one end and is given by p(x)=(3.251015 cm^-3) - C*x where C is a constant. The diffusion current density is found to be J_p=0.27 A/cm^2. The hole diffusion constant is 10.4 cm^2/s. What is the hole concentration at x = 4.2010-3 cm. Enter your answer in cm^-3.

Correct, computer gets: 2.57e+15

Hint:

5. Carrier Diffusion: From Neamen sect. 4.2. The hole concentration in a sample of ptype silicon at T=300 K is given by p=(2.081016 cm^-3)*(1-(x/L)) for 0 < x < L where L=1.8010-3 cm. The hole diffusion constant is 12.4 cm^2/s. In the first box, enter the diffusion current density at x=0. In the second box, enter the diffusion current density at x=4.5010-4 cm. In the third box, enter the diffusion current density at x=9.0010-4 cm. Enter your answers in A/cm^2.

Correct, computer gets: 2.29e+01, 2.29e+01, 2.29e+01

Hint:

6. Carrier Diffusion: From Neamen sect. 4.2. The total current in a semiconductor is constant and is composed of electron drift current and hole diffusion current. The electron concentration is constant and is equal to 1.001016 cm^-3. The hole concentration varies with x and is given by p(x)=(1.001015 cm^-3)*exp(-x/L) for positive x where x is in cm and L=1.1510-3 cm. The hole diffusion coefficient is D_p=12.0 cm^2/s and the electron mobility is mu_n=1000 cm^2/(V*s). The total current density is J=4.7 A/cm^2. The resulting hole diffusion current density depends on x and has the form J_p,dif(x)=A*exp(-x/L) where A is a constant. In the first box, enter the value of the constant A in A/cm^2. You can calculate the electron drift current from the total current and the hole diffusion current and then find the electric field as a function of x. The resulting expression for the electric field has the form epsilon_x=B-C*exp(-x/L) where B and C are constants. In the second box, enter the constant B in units of V/cm. In the third box, enter the constant C in units of V/cm.

Correct, computer gets: 1.67e+00, 2.94e+00, 1.04e+00

7. Graded Impurity Distribution: From Neamen sect. 4.3. Consider a semiconductor in thermal equilibrium (no current) at T=300 K. Assume that the donor concentration varies exponentially with x so that N_d(x)=N_d0*exp(-alpha*x) for x between 0 and 1/alpha. In this expression, N_d0 is a constant, x is in cm, and alpha=8.1 cm^-1. You should be able to find an expression for the electric field as a function of x between x=0 and x=1/alpha. Using this expression, calculate the magnitude of the potential difference between x=0 and x=1/alpha. Enter your answer in units of V. Hint: Be very careful with your choice of units for any fundamental constants in this problem. Is your potential difference a reasonable magnitude?

8. Hall Effect: From Neamen sect. 4.5. A silicon Hall device at T=300 K has the following geometry: d=0.0017 cm, W=0.021 cm, and L=0.165 cm. The electrical parameters measured are: I_x=0.74 mA, V_x=13.3 V, V_H=4.6 mV, and B_z=0.20 T. In the first box, enter "p" if this material is p-type or "n" if this material is n-type. In the second box, enter the majority carrier concentration in cm^-3. In the third box, enter the majority carrier mobility in cm^2/(V*s).

Correct, computer gets: p, 1.18e+16, 1.36e+02

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy