ch26 1
ch26 1
Key contents
Electric current
Current density and drift velocity
Resistance and resistivity
Ohm’s law
Power in electric circuits
26.2: Electric Current:
Solution
⚫ Power = P = 100W
⚫ Current = I = 3A
⚫ Resistance = R = ?
⚫ P = I^2 x R
⚫ R = P/I^2 = 100W/(3)^2
⚫ R = 11.1 Ohm Answer
Problem#41
Solution
⚫ V = 120V , Resistance = R = 14 Ohm
⚫ (a)Power = P = ? , P = V^2/R
⚫ P= (120V)^2/ 14 Ohm = 1028W=1.028kW
⚫ (b) Cost for 5 hr = ? , t = 5 hr
⚫ Cost = P x t x cost/kW.h
⚫ Cost = (1.028KW) x (5hr) x ( 0.05$/kW.h)
⚫ Cost = 0.25$
Problem_43
Solution
⚫ V = 3V , P = 0.540W
⚫ R= ? , P for 1.5V = ?
⚫ As P=V2/R ,
⚫ R=V2/P = 9V/0.540W = 16.6 Ohm
⚫ Now Power for 1.5V = ?
⚫ P=V2/R= (1.5V)2/16.6= 0.135W
Problem_44
Solution
⚫ I = P/V = 7W/9V = 0.7777 A
⚫ t = 5 hrs = 5 x 3600 = 18000s,
⚫ Q=?
⚫ Q = I x t = 0.777A x 18000s = 14000C Answer
Problem_45
Solution
26.2: Electric Current, Conservation of Charge, and Direction of Current:
Example:
26.3: Current Density:
If the current is uniform across the surface and parallel to dA, then J is
also uniform and parallel to dA, and then
The SI unit for current density is the ampere per square meter (A/m2).
26.3: Current Density:
!!!
26.3: Current Density, Drift Speed:
When a conductor has a current passing through it, the electrons move randomly,
but they tend to drift with a drift speed vd in the direction opposite that of the
applied electric field that causes the current. The drift speed is tiny compared with
the speeds in the random motion.
In the figure, the equivalent drift of positive charge carriers is in the direction of the
applied electric field, E. If we assume that these charge carriers all move with the
same drift speed vd and that the current density J is uniform across the wire’s
cross-sectional area A, then the number of charge carriers in a length L of the wire is
nAL. Here n is the number of carriers per unit volume.
The total charge of the carriers in the length L, each with charge e, is then
The total charge moves through any cross section of the wire in the time interval
is the current
Example, Current Density, Uniform and Nonuniform:
Example, Current Density, Uniform and Nonuniform, cont.:
Example: In a current, the conduction electrons move very slowly.
26.4: Resistance and Resistivity:
We determine the resistance between any two points of a conductor by applying a potential
difference V between those points and measuring the current i that results. The resistance R
is then
The SI unit for resistance that follows from Eq. 26-8 is the volt per ampere. This has a
special name, the ohm (symbol Ω):
The relation between temperature and resistivity for copper—and for metals in
general—is fairly linear over a rather broad temperature range. For such linear
relations we can write an empirical approximation that is good enough for most
engineering purposes:
26.4: Resistance and Resistivity, Calculating Resistance from Resistivity:
Example, A material has resistivity, a block of the material has a resistance.:
26.5: Ohm’s Law:
26.6: A Microscopic View of Ohm’s Law:
* It is often assumed that the conduction electrons in a metal move with a single
effective speed veff, and this speed is essentially independent of the temperature. For
copper, veff =1.6 x106m/s.
* When we apply an electric field to a metal sample, the electrons modify their
random motions slightly and drift very slowly—in a direction opposite that of the
field—with an average drift speed vd. The drift speed in a typical metallic conductor
is about 5 x10-7 m/s, less than the effective speed (1.6 x106 m/s) by many orders of
magnitude.
* The motion of conduction electrons in an electric field is a combination of the
motion due to random collisions and that due to E.
* If an electron of mass m is placed in an electric field of magnitude E, the electron
will experience an acceleration:
* In the average time τ between collisions, the average electron will acquire a drift
speed of
*
Example, Mean Free Time and Mean Free Distance:
26.7: Power in Electric Circuits:
Pure silicon has a high resistivity and it is effectively an insulator. However, its resistivity can be
greatly reduced in a controlled way by adding minute amounts of specific “impurity” atoms in a
process called doping.
A semiconductor is like an insulator except that the energy required to free some electrons is not quite
so great. The process of doping can supply electrons or positive charge carriers that are very loosely
held within the material and thus are easy to get moving. Also, by controlling the doping of a
semiconductor, one can control the density of charge carriers that are responsible for a current.
In a semiconductor, n is small but increases very rapidly with temperature as the increased thermal
agitation makes more charge carriers available. This causes a decrease of resistivity with increasing
temperature. The same increase in collision rate that is noted for metals also occurs for semiconductors,
but its effect is swamped by the rapid increase in the number of charge carriers.
26.9: Superconductors:
In 1911, Dutch physicist Kamerlingh Onnes
discovered that the resistivity of mercury absolutely
disappears at temperatures below about 4 K .This
phenomenon is called superconductivity, and it
means that charge can flow through a
superconducting conductor without losing its
energy to thermal energy.
Problems