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116 El III Ec 05

The document is an examination paper for the Electronics Third Paper focusing on Electronic Devices and Amplifiers, with a total of 75 marks and a duration of 3 hours. It includes multiple-choice questions, short answer questions, and descriptive questions divided into five units covering various topics related to electronic devices. The paper assesses students' understanding of concepts such as JFET, MOSFET, SCR, amplifier efficiency, and differential amplifiers.

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0% found this document useful (0 votes)
11 views7 pages

116 El III Ec 05

The document is an examination paper for the Electronics Third Paper focusing on Electronic Devices and Amplifiers, with a total of 75 marks and a duration of 3 hours. It includes multiple-choice questions, short answer questions, and descriptive questions divided into five units covering various topics related to electronic devices. The paper assesses students' understanding of concepts such as JFET, MOSFET, SCR, amplifier efficiency, and differential amplifiers.

Uploaded by

bobbyisfire999
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 7

EL/III/EC/05 Student’s Copy

2023
( CBCS )
( 3rd Semester )

ELECTRONICS
THIRD PAPER

( Electronic Devices and Amplifiers )

Full Marks : 75
Time : 3 hours

The figures in the margin indicate full marks for the questions
( Use of Simple Calculator allowed )

( SECTION : A—OBJECTIVE )
( Marks : 10 )

Tick (3) the correct answer in the brackets provided : 1×10=10

1. The minimum drain-source voltage at which the drain current essentially


becomes constant is called _____ voltage.
(a) saturation ( )
(b) pinch-off ( )
(c) active ( )
(d) cut-off ( )

2. A MOSFET is sometimes called _____ JFET.


(a) many-gate ( )
(b) open-gate ( )
(c) insulated-gate ( )
(d) shorted-gate ( )

/116 1 [ Contd.
3. A UJT is sometimes called _____ diode.
(a) low-resistance ( )
(b) high-resistance ( )
(c) single-based ( )
(d) double-based ( )

4. When SCR starts conducting, then _____ loses all control.


(a) gate ( )
(b) cathode ( )
(c) anode ( )
(d) drain ( )

5. If a transistor is operated in such a way that output current flows for 60º
of the input signal, then it is _____ operation.
(a) class C ( )
(b) class AB ( )
(c) class A ( )
(d) class B ( )

6. The maximum efficiency of transformer coupled class A power amplifier is


(a) 40% ( )
(b) 75·8% ( )
(c) 50% ( )
(d) 25% ( )

7. What are the parameters used to represent a transistor in its hybrid


equivalent circuit?
(a) a, b, g, d ( )
(b) h fe , hie , hoe , hre ( )
(c) S, Y, Z, H ( )
(d) V be , V ce , I c , I b ( )

/116 2 [ Contd.
8. The amplifier parameter which indicates how much the output power is
increased concerning the input power is called
(a) voltage gain ( )
(b) current gain ( )
(c) impedance gain ( )
(d) power gain ( )

9. If A DM = 3500 and ACM = 0·35, the CMRR is


(a) 80 dB ( )
(b) 50 dB ( )
(c) 90 dB ( )
(d) 35 dB ( )

10. The output of a particular Op-Amp increases 8 V in 12 ms. The slew rate is
(a) 90 V/ms ( )
(b) 1·5 V/ms ( )
(c) 58 V/ms ( )
(d) 0·67 V/ms ( )

( SECTION : B—SHORT ANSWERS )


( Marks : 15 )

Answer the following : 3×5=15


UNIT—I

1. A JFET has a drain current of 5 mA. If I DSS = 10 mA and V GS (off ) = -6 V,


find the value of (a) V GS and (b) V P .
OR
2. For a certain D-MOSFET, I DSS = 10 mA and V GS (off ) = -8 V.
(a) Is this an n-channel or a p-channel?
(b) Calculate I D at V GS = -3 V.
(c) Calculate I D at V GS = +3 V.

/116 3 [ Contd.
UNIT—II

3. Explain the terms ‘break-over voltage’, ‘holding current’ and ‘forward


current rating’ as used in connection with SCR analysis.
OR
4. Explain the UJT used as relaxation oscillator.

UNIT—III

5. With supporting diagram and waveforms, explain the working of a


push-pull amplifier.
OR
6. Referring below, calculate (a) input power and (b) collector efficiency of an
amplifier. It is given that the voltage result in a base current of 10 mA and
the value of b = 25 :
VCC = 20 V

RB = 1 K RC = 20 ohms

+ N-P-N
Vin +

UNIT—IV

7. Explain the concept of input impedance and output impedance in a


transistor amplifier.
OR
8. Describe the construction and operation of an R-C coupled transistor
amplifier. Explain its frequency response, merits and demerits. Provide
examples of applications where it is commonly used.

/116 4 [ Contd.
UNIT—V
9. For differential amplifier, the input voltages are v 1 = 300 mV and
v 2 = 250 mV. The differential gain is 5000. Calculate the output voltage
when the CMRR is (a) 200 and (b) 8000.
OR
10. A differential amplifier has a differential gain of 1000 and CMRR of 100 dB.
If the common mode signal is 5 sin 200 pt volts, calculate the common mode
output voltage.

( SECTION : C—DESCRIPTIVE )
( Marks : 50 )

Answer the following : 10×5=50

UNIT—I
1. (a) State and explain the main parameters of JFET. Also establish the
relationship between them. 3+2=5

(b) Compare the various characteristics of D-MOSFETs and JFETs. 3

(c) When V GS of a JFET changes from –3·1 V to –3 V, the drain current


changes from 1 mA to 1·3 mA. What is the value of transconductance? 2
OR
2. (a) Describe the construction, circuit operation and transfer
characteristics of D-MOSFET. 2+2+2=6

(b) The following readings were obtained experimentally from a JFET :

V GS 0 V 0V –0·2 V
V DS 7 V 15 V 15 V
ID 10 mA 10·25 mA 9·65 mA
Determine (i) a.c. drain resistance, (ii) transconductance and
(iii) amplification factor. 4

/116 5 [ Contd.
UNIT—II
3. (a) Explain two-transistor analogy and 90º phase control of SCR. 3+2=5

(b) The intrinsic stand-off ratio for a UJT is determined to be 0·6. If the
inter-base resistance is 10 kW, what are the values of R B1 and R B2 ? 3

(c) What is dynamic resistance of junction diode? Give the condition for
linearity of the junction diode. 1+1=2
OR
4. (a) Explain the construction and operation of SCR. 4

(b) Explain with diagram, V-I characteristics of P-N junction diode in


forward bias and reverse bias. 3

(c) Explain the characteristics of UJT. 3

UNIT—III
5. Prove that a transformer coupled class-A power amplifier has maximum
collector efficiency of 50%. A power transistor working in a class-A
operation is supplied from a 12 volts battery. If the maximum collector
current change is 100 mA, find the power transfer to a 5 W loud speaker if
it is (a) directly connected in the collector and (b) transformer coupled for
maximum power transfer. Find the turns ratio in the second case. 5+5=10
OR
6. A class-B push-pull amplifier has an efficiency of 60% and each transistor
has a rating of 2·5 W. Find the a.c. output power and d.c. input power. Also
find out if a class-B push-pull amplifier with transformer coupled load uses
two transistors rated 10 W each. What is the maximum power output one
can obtain at the load from the circuit? 5+5=10

UNIT—IV
7. In the context of transformer-coupled amplifiers, discuss the construction,
operation and classification based on the number of windings. Explain the
concept of transformer impedance and how it affects amplifier
performance. Provide examples of applications for transformer-coupled
amplifiers. 5+5=10

/116 6 [ Contd.
OR
8. Discuss the hybrid equivalent circuit of a transistor, elaborating on how
the hybrid parameters (h fe , hie , hoe , hre ) are defined and used to represent
the transistor’s behaviour in a circuit. Provide examples to illustrate their
significance. 10

UNIT—V
9. Explain the concept of CMRR. Discuss the operation of a differential
amplifier using transistor model. How will you configure an Op-Amp as
differentiator and integrator circuits? 2+2+3+3=10
OR
10. Derive an expression for the voltage gain of inverting and non-inverting
amplifiers. Design an Op-Amp as a logarithmic amplifier. Determine the
output voltage for the summing amplifier shown in the figure below :
2+2+3+3=10

R1 Rf
10 V
5 kW 1 kW
R2
5V +20 V
8 kW
R3 +
8V Vo
10 kW –
–20 V

HHH

/116 7 24G—70

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