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Midterm1Ba 58 Points: Parameters To Use For The Problems

1) A sample of intrinsic Silicon at 400K is analyzed. The resistance is calculated to be 2181.64 ohms. 2) A sample of N-type Silicon is doped with Nd = 1016 cm3. Excess holes were injected such that the concentration was 105 cm-3 at t = 2usec. The initial excess hole concentration is calculated. 3) A band diagram of a pn junction in thermal equilibrium is shown. The built-in potential, Vbi, is labeled and its numerical value given.

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44 views7 pages

Midterm1Ba 58 Points: Parameters To Use For The Problems

1) A sample of intrinsic Silicon at 400K is analyzed. The resistance is calculated to be 2181.64 ohms. 2) A sample of N-type Silicon is doped with Nd = 1016 cm3. Excess holes were injected such that the concentration was 105 cm-3 at t = 2usec. The initial excess hole concentration is calculated. 3) A band diagram of a pn junction in thermal equilibrium is shown. The built-in potential, Vbi, is labeled and its numerical value given.

Uploaded by

Javier Corral
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Parameters to use for the problems:

KT(300K) = 26meV
K = 8.617 x 10-5 eV/K
q= 1.6x10-19 C
For Silicon at room temperature ni = 1010 cm-3

Midterm1Ba
58 points

1)

(2pts) For a sample in thermal equilibrium, which answer is the most complete? (circle one)
a) np ni2
dE F
0
dx
c Jn | diff Jn | drift 0
d) a and b
e) a and c
f) a, b and c
b)

2) (2pts) What happens to the drift velocity for high E-fields?

3) (2pts) What is the value of the Fermi Function at EF?

4) (10pts) A sample of intrinsic Silicon at 400K is 2cm long and 4cm2 in area. Determine the
resistance.
Assume that at this temperature: ni = 3.59 x 1012 cm-3, Dn = 10 cm2/sec, Dp = 3.64 cm2/sec

T = 400
un = 294, up = 105
Rho = 4463.27
R = 2181.64

450K ni = 2.58E+13

T = 450
Dn = 9.32 Dp = 3.3
un = 239, up = 85
Rho = 747.69
R = 373.84

5) The concentration of holes in a sample of silicon at room temperature and in thermal


equilibrium is described by:
p ( x) 1014 ( x 2) 2 cm 3
At this temperature: ni = 1010/cm3, n = 1268 cm2/V-sec, Dn = 33 cm2/sec,
p = 480cm2/V-sec, Dp = 12.5 cm2/sec
a)

(7pts) Determine the electron diffusion current density at x = 0

b) (7pts) Determine the hole drift current density at x = 0.

6) (8pts) A sample of N-type Silicon at room temperature is doped such that Nd = 1016 cm3
. At t=0 an unknown concentration of excess holes is suddenly injected in the material
such that there is no concentration gradient. At t = 2usec, the concentration of excess
holes is 105 cm-3 Assume that all the excess holes recombine at t= infinity. Determine the
concentration of excess holes injected at t=0.
You may assume that: ni = 1010 cm-3,

n = p = 10

-6

sec, Lp = 100um, Ln = 200um

n p (0) 105 e 2

6) (8pts) A sample of N-type Silicon at room temperature is doped such that Nd = 1016 cm3
. At t=0 an unknown concentration of excess holes is suddenly injected in the material
such that there is no concentration gradient. At t = 2usec, the concentration of excess
holes is 2x105 cm-3 Assume that all the excess holes recombine at t= infinity. Determine
the concentration of excess holes injected at t=0.
You may assume that: ni = 1010 cm-3,

n = p = 10

-6

sec, Lp = 100um, Ln = 200um

7) (12pts) Below is a band diagram of a sample of silicon in room temperature


E
Ec
EF
Ei

Ev

a)

Is the sample in thermal equilibrium? How do you know?

b)

On the band diagram indicate the direction of electron drift current.

c)

Make a sketch of the Voltage as a function of x.

d)

Make a sketch of the E-field as a function of x

E-field

8) (8pts) Below is the band diagram of a pn junction in thermal equilibrium and at room temperature.
a) Determine the doping concentration on the n side.
b) Label and provide a numerical value for Vbi

Ec

.09eV

EF
.18eV

Ei

Ev

Ec

.1eV

EF
.18eV

Ei

Ev

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