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UES007

This document appears to be an exam for a semiconductor physics course. It contains: 1) Four questions related to semiconductor properties and device operation, including calculating carrier concentrations in a doped semiconductor, deriving an expression for minimum conductivity, and explaining tunnel diode and breakdown mechanisms. 2) Questions about diode characteristics such as reverse bias voltage for 95% of reverse saturation current and how diffusion capacitance varies with current. 3) A question about plotting potential variation and minority carrier concentration for a biased p-n-p transistor. 4) Information about schedules to view evaluated answer sheets.

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Samaksh Gulati
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106 views1 page

UES007

This document appears to be an exam for a semiconductor physics course. It contains: 1) Four questions related to semiconductor properties and device operation, including calculating carrier concentrations in a doped semiconductor, deriving an expression for minimum conductivity, and explaining tunnel diode and breakdown mechanisms. 2) Questions about diode characteristics such as reverse bias voltage for 95% of reverse saturation current and how diffusion capacitance varies with current. 3) A question about plotting potential variation and minority carrier concentration for a biased p-n-p transistor. 4) Information about schedules to view evaluated answer sheets.

Uploaded by

Samaksh Gulati
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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-----

el
ce
eoPeY @
Roll Number:
-
Tliapar University, Patiala
_=---".... .. =-::ii.
.."-'.-=B.E (CSE,_ECE)JV1ST__ ': "':"."
Jan-June 2011 Name of Faculty: Sakshi, Nidhi Agrawal,
M. K. Rai, Megha Agrawal
March 11,2011
Time: 2 Hrs; MM:40
Note: Attempt all sub-questions in sequence only
Useful data: q=1.6 xlO-
19C,
K=1.38 xIO-
23
J/K,'&o=8,86 xI0-
12
F1m, &51=IJ .9'&Ge=16 .
1 i) An unknown semiconductor has E
g
= l.1eV and N, =Ny. It is doped with 1015cm3 5
donors, where the donor level is 0.2eV below E
e
. Given that EF is O.25eV below E
e
,
calculate n, and the concentration of electrons and holes in the semiconductor at
300k, 3,2
ii) a) Show that the minimum conductivity (J'min of a uniformly doped semiconductor
sample occurs when n = n P / where no is the equilibrium concentration of
o 1 / fl "
,
electrons and n, is the intrinsic concentration of semiconductor.
b) What is the expression for the minimum conductivity (J',mn ?
2 i) Prove that the ratio of hole to electron current crossing a p-n junction is given by: 5
Ip,;(O)/ _ (J' pL
Il
/
/ Il/p (O) - / (J'"L
p
where C'p(n) =conductivity of pen) side.
5
ii) Explain the working operation of Tunnel diode with suitable energy band diagram.
3 i) Calculate the applied reverse bias voltage at which the reverse current in a Ge p-n 5
junction diode at T = 300k reaches 95% of its reverse saturation current value.
ii) Explain the Break down mechanism in semiconductor with suitable diagram. 5
4 i) How does the diffusion capacitance CD vary with DC diode current? What is the 3,2
product of CD and the dynamic resistance of a diode ?
ii) For a p-n-p transistor biased in the active region, plot and explain 5
a) the potential variation
b) the minority carrier concentration:
Evaluated answer sheets can be seen in Semiconductor Lab according to the following schedule:
March 15,2011 CSE (1, 2, 3, 4) 5:00 pm
March 15, 20J] ECE (4,5) 5:30 pm
March 16,20] 1 CSE (5,6, 7) 5:00 pm
March 16,201] ECE (1, 2, 3) 5:30 pm
"
8j

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