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NSE 28. Semiconductor Electronics

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55 views8 pages

NSE 28. Semiconductor Electronics

Uploaded by

arvindjayyam11
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© © All Rights Reserved
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Semiconductor electronicS : materialS ,

deviceS and Simple circuitS


Important formulas and concepts directly from the NCERT-
➢ The energy bands are the different energy levels with continuous energy variation.
➢ The energy bands which includes the energy levels of valence electrons k/as ‘valence
band’.
➢ The energy band above the valence band is called the ‘conduction band’.

❖ Classification b/w conductors(metal) , insulators and semiconductors-

1) Metals-
o Energy gap Eg (gap b/w valence band and conduction band) ≈ 0
o As temperature increases, resistivity increases and conductivity decreases.

2) Insulators-
o Eg > 3eV (large)
o As temp. increases, conductivity increases in very small amount.

3) Semiconductors-
o Eg < 3eV
o At 0 kelvin, act as insulator.
o As temp. increases, conductivity increases and act as conductors.

❖ Intrinsic semiconductors-

➢ In intrinsic semiconductors, the no. of free electrons, ne is equal to no. of holes, nh.
ne = nh = ni
where, ni is intrinsic carrier concentration.

➢ Hole is vacancy with effective positive charge.

➢ Total current is the sum of electron current and hole current.


I = Ie + Ih

➢ Apart from process of generation of conduction of electrons and holes , a process of


recombination occurs in which electrons recombine with the holes.
➢ At equilibrium, the rate of generation is equal to the rate of recombination of charge
carriers.

❖ Extrinsic semiconductors-

➢ When a small amount of suitable impurity is added to intrinsic semiconductor, its


conductivity increases and this material is k/as ‘extrinsic semiconductors’.

➢ The addition of impurity is ‘doping’ and the impurity atom is called ‘dopant’.

➢ There are 2 types of dopants used in doping forms 2 types of extrinsic


semiconductors-

1) n-type semiconductors-
• Impurity added is pentavalent (As,Sb,P etc.).
• The pentavalent dopant is donating one extra electron for conduction and hence
k/as ‘donor impurity’.
• In a doped semiconductor, total no. of electrons are due to contributed by donors
and those generated intrinsically, while holes due to intrinsic source only.
• Electrons are majority charge carriers and holes are minority charge carriers.
• For n-type semiconductors,
ne >> nh

2) p-type semiconductors-
• impurity added is trivalent (B,Al,In etc.).
• The trivalent impurity is k/as ‘acceptor impurity’ because it can generate hole by
accepting electron.
• Total no. of holes are more than no. of electrons because holes generated due to
dopants as well as by intrinsic source and e-s by intrinsic source only.
• Holes are majority charge carriers and electrons are minority .
• For p-type semiconductors,
nh >> ne

➢ The electron and hole concentration in a semiconductor in thermal equilibrium is


given by,
nenh = ni2

➢ The difference in resistivity of C,Si and Ge depends on energy gap.


❖ p-n junction –

➢ free electrons diffuse from n-side to p-side due to concentration difference and
recombine with the hole.

➢ Diffusion current flows from P to N side due to majority charge carriers.

➢ Due to electron and hole recombination, depletion layer form.

➢ After formation of depletion layer, there is an internal electric field which allow to
move minority charge carriers, due to which drift current flows from N to P side
due to minority charge carriers.

➢ At equilibrium,
Idiffusion = Idrift

❖ p-n junction diode under forward bias-

➢ negative terminal of battery is connected to n-side and positive terminal to p-side.


➢ Net electric field decreases.
➢ Potential barrier decrease.
➢ Width of depletion decrease.
➢ Diffusion current will flow.
➢ Drift current ≈ 0
➢ In forward bias, ideal diode act as simple wire.

❖ p-n junction diode under reverse bias-

➢ negative terminal connected to p-side and positive terminal to n-side.


➢ Net electric field increase.
➢ Potential barrier increase.
➢ Width of depletion increase.
➢ Diffusion current ≈ 0.
➢ Drift current is very small because due to minority charge carriers, k/as ‘reverse
saturation current’.
➢ In reverse bias, ideal diode behave as open wire.
➢ If voltage is equal to breakdown voltage, current increases sharply.

➢ For diodes, a quantity called dynamic resistance as ratio of small change in


voltage to a small change in current.

rd = ΔV/ΔI
❖ Application of junction diode as a Rectifier-

➢ If an alternating voltage is applied across a diode the current flows only in that
part of the cycle when the diode is forward biased. This property is used to rectify
alternating voltages and the circuit used for this purpose is called a rectifier.

➢ If an alternating voltage is applied across a diode in series, current will appear only
during half cycles , such circuit is known as ‘half wave rectifier’.

➢ For half wave rectifier, output frequency = input frequency

➢ The circuit using two diodes as shown will give rectified output to both positive and
negative half cycles, hence it is k/as ‘full wave rectifier’.

➢ In full wave rectifier, output frequency is 2 times of input frequency.


➢ The additional circuits appear to filter out the ac ripple and give a pure dc
voltage, so they are called filters. Capacitor is used as filter in rectifier.

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