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3-Lesson3-Density of State & Current Conc

The document discusses density of states and carrier concentrations in semiconductors. It defines electron wave functions and how periodic boundary conditions result in discrete allowed values for wave vectors. It then describes how the number of electron states is related to the Fermi wave vector and defines the density of states. The Fermi-Dirac distribution and Boltzmann approximation are introduced to describe the probability of electron occupation. Expressions are provided for calculating electron and hole concentrations by integrating the product of density of states and occupation probability over the appropriate energy ranges.

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toby3124
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51 views16 pages

3-Lesson3-Density of State & Current Conc

The document discusses density of states and carrier concentrations in semiconductors. It defines electron wave functions and how periodic boundary conditions result in discrete allowed values for wave vectors. It then describes how the number of electron states is related to the Fermi wave vector and defines the density of states. The Fermi-Dirac distribution and Boltzmann approximation are introduced to describe the probability of electron occupation. Expressions are provided for calculating electron and hole concentrations by integrating the product of density of states and occupation probability over the appropriate energy ranges.

Uploaded by

toby3124
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPT, PDF, TXT or read online on Scribd
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Density of State (DOS) and

Carrier Concentrations
Electron Wave Functions
Electron wave functions described by : 

i k x xk y y k z z 
k  e ik r
e
Apply periodic boundary conditions:
(x,y,z) = (x+A,y,z) = (x,y+A,z) = (x,y,z+A),
with A the periodicity.

1D crystal

expik x ( x  A)  expik x x


This requirements results in discrete allowed values for k :
2 2 2
kx  nx ; ky  ny ; kz  nz , nx , n y , nz  0,  1,  2...  N
A A A
kz
Number of state in Sphere =
dk
4 k 3
volume _ of _ sphere 3 F

kF volume _ of _ 1 _ state  2 3
 
 A
ky

Number of electrons (N) = 2x Number of states,


kx because of spin degeneracy (2 electrons per state)
4 k 3
V 3
N  2. 3 F
 2 kF ( A3
V)
 2 
3
3
2  
2
A  A
Number of states per unit Volume
V 3 1 1
N  2 kF  N k F3
3 V 3 2

Energy – k relationship :
2 2 E F 2m
EF  kF kF  2
2m 

Density of states
Number of state per unit energy, per unit volume
3
1  2m  2 12
g E  
dN
 2  2  EF
dE 2   
Density of States
Conduction Band

Valence Band

5
Density of states (DOS)
Electron Concentrations

• Integrate n(E) over all the energies in the conduction


band to obtain
Fermi-Dirac Distribution
The probability that an electron occupies an
energy level, E, is

f(E) = 1/{1+exp[(E-EF)/kT]}

– where T is the temperature (Kelvin)


– k is the Boltzmann constant (k=8.62x10-5 eV/K)
– EF is the Fermi Energy (in eV)
f(E) = 1/{1+exp[(E-EF)/kT]}

1 T=0 oK
T1>0
f(E)
T2>T1

0.5

0 E
EF

All energy levels are filled with e-’s below the Fermi Energy at 0 oK
The Boltzmann Approximation
If (E-EF)>kT such that exp[(E-EF)/kT] >> 1 then,

f(E) = {1+exp[(E-EF)/kT]}-1  {exp[(E-EF)/kT]}-1

 exp[-(E-EF)/kT] …the Boltzmann approx.

similarly, fp(E) is small when exp[(EF - E)/kT]>>1:

fp(E) = {1+exp[(EF - E)/kT]}-1  {exp[(EF - E)/kT]}-1

 exp[-(EF - E)/kT]
Electrons, n(E)
f(E)

1 T=0 oK
T1>0
T2>T1

0.5 S(E)

0 E
EV EF EC

n(E)=g(E)f(E)

E
Hole concentrations
• Integrate p(E) over all energies in the valance band to
optain p
Fermi-Dirac Distribution for holes

Remember, a hole is an energy state that is NOT occupied by


an electron.

Therefore, the probability that a state is occupied by a hole


is the probability that a state is NOT occupied by an electron:

fp(E) = 1 – f(E) = 1 - 1/{1+exp[(E-EF)/kT]}


={1+exp[(E-EF)/kT]}/{1+exp[(E-EF)/kT]} -
1/{1+exp[(E-EF)/kT]}
= {exp[(E-EF)/kT]}/{1+exp[(E-EF)/kT]}
=1/{exp[(EF - E)/kT] + 1}
holes, p(E)

fp(E)
T=0 oK
1
T1>0
T2>T1

0.5 S(E)

0 E
EV EF EC

p(E)=g(E)f(E)

hole energy
Finding n and p
3/ 2 
1  2m 
Ec (max) *
n   S ( E ) f ( E )dE   2
2 
n
  E  EC e  E  EF / kT dE
Ec
2    Ec
3/ 2
 m kT  *
 N C exp[ ( EC  EF ) / kT ] ...where N C  2 
2 
n

 2 
the effective density of states
in the conduction band

3/ 2
1  2m 
Ev * Ev
p   S ( E ) f p ( E )dE  2 
 EV  E e  EF  E / kT dE
p

2  2 
Ev (min)   
3/ 2
 m kT  *

 NV exp[ ( EF  EV ) / kT ] ...where NV  2  p
 2 
2
 

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