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Chapter 7

The document describes various FET amplifier configurations including: 1) Common-source amplifiers which have voltage gain, high input impedance, and low output impedance. 2) Source followers which have gain less than 1, high input impedance, and medium output impedance. 3) Common-gate amplifiers which have voltage gain, low input impedance, and high output impedance. The key parameters like transconductance, output resistance, voltage gain and input/output impedances are defined and formulas are provided for each configuration. Examples are included to calculate these parameters.

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FaIz Fauzi
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85 views15 pages

Chapter 7

The document describes various FET amplifier configurations including: 1) Common-source amplifiers which have voltage gain, high input impedance, and low output impedance. 2) Source followers which have gain less than 1, high input impedance, and medium output impedance. 3) Common-gate amplifiers which have voltage gain, low input impedance, and high output impedance. The key parameters like transconductance, output resistance, voltage gain and input/output impedances are defined and formulas are provided for each configuration. Examples are included to calculate these parameters.

Uploaded by

FaIz Fauzi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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CHAPTER 7

Basic FET Amplifiers


FET Modeling

𝑖𝐷 = 𝑓 𝑣𝐺𝑆 , 𝑣𝐷𝑆

𝜕𝑖 𝜕𝑖
Or, 𝑖𝐷 = 𝜕𝑣 𝐷 𝑣𝐺𝑆 ቚ + 𝜕𝑣 𝐷 𝑣𝐷𝑆 ቚ
𝐺𝑆 𝑣𝐷𝑆 = Con. 𝐷𝑆 𝑣𝐺𝑆 = Con.

1
Or, 𝑖𝐷 = 𝑔𝑚 𝑣𝐺𝑆 + 𝑟 𝑣𝐷𝑆 NMOSFET as a 2 ports device
0

𝜕𝑖
Where, 𝑔𝑚 = 𝜕𝑣 𝐷 ቚ
𝐺𝑆 𝑣𝐷𝑆 = Con.

It is called the forward transconductance or simply transconductance of the FET.

Similarly, output /drain resistance

𝜕𝑣𝐷𝑆
𝑟0 = ቚ
𝜕𝑖𝐷 𝑣 = Con.
𝐺𝑆
The following small-signal equivalent circuit/model is drown by using equation
1
𝑖𝐷 = 𝑔𝑚 𝑣𝐺𝑆 + 𝑣𝐷𝑆
𝑟0

Common-source NMOS transistor Small-signal equivalent circuit/model

2
In saturation region drain current for NMOSFET 𝑖𝐷 = 𝐾𝑛 𝑣𝐺𝑆 − 𝑉𝑇𝑁

At Q-point the drain current and gate to source voltage are denoted as 𝑖𝐷𝑄
and 𝑣𝐺𝑆𝑄 respectively
𝜕𝑖
𝐷𝑄
And 𝑔𝑚 = 𝜕𝑣 = 2𝐾𝑛 𝑣𝐺𝑆𝑄 − 𝑉𝑇𝑁 Or, 𝑔𝑚 = 2 ∙ 𝐾𝑛 𝐼𝐷𝑄
𝐺𝑆𝑄
Similarly it can be shown that the output/drain resistance
2 −1 −1
𝑟0 = 𝐾𝑛 𝜆 𝑣𝐺𝑆𝑄 − 𝑉𝑇𝑁 ≅ 𝜆𝐼𝐷𝑄

EXAMPLE 7.1

Calculate the transconductance and gate-to-source voltage of as n-channel MOSFET with


parameters 𝑉𝑇𝑁 = 1.0 V, 𝐾𝑛 = 50 mA/V2. Assume the drain current IDQ = 15 mA.

Solution: The transconductance 𝑔𝑚 = 2 ∙ 50 15 = 54.77 mA/V

The gate-to-source voltage can be found as the following relation

𝑔𝑚 = 2𝐾𝑛 𝑣𝐺𝑆𝑄 − 𝑉𝑇𝑁

𝑔 54.77
Or, 𝑣𝐺𝑆𝑄 = 2𝐾𝑚 + 𝑉𝑇𝑁 = + 1 = 1.547 V
𝑛 2×50
Basic Common-Source Amplifier

Common-source NMOS circuit Small signal ac equivalent circuit


with voltage divider biasing

DC analysis
𝑅2
𝑅𝑇𝐻 = 𝑅1 ||𝑅2 and 𝑉𝑇𝐻 = 𝑉𝐺𝑆𝑄 = 𝑉𝐷𝐷
𝑅1 +𝑅2

2 𝑅2 2
𝐼𝐷𝑄 = 𝐾𝑛 𝑉𝐺𝑆𝑄 − 𝑉𝑇𝑁 = 𝐾𝑛 𝑉𝐷𝐷 − 𝑉𝑇𝑁
𝑅1 +𝑅2

−1
𝑔𝑚 = 2 ∙ 𝐾𝑛 𝐼𝐷𝑄 and 𝑟0 = 𝜆𝐼𝐷𝑄
AC analysis

Input resistance of the circuit


𝑅𝑖 = 𝑅1 ||𝑅2

Output voltage of the circuit


𝑉𝑜 = −𝑔𝑚 𝑉𝐺𝑆 𝑟𝑜 ||𝑅𝐷

𝑅𝑖
And 𝑉𝐺𝑆 = 𝑉
𝑅𝑖 + 𝑅𝑆𝑖 𝑠 Small signal ac equivalent circuit
𝑅𝑖
So, 𝑉𝑜 = −𝑔𝑚 𝑉 𝑟 ||𝑅
𝑅𝑖 + 𝑅𝑆𝑖 𝑠 𝑜 𝐷

Voltage gain of the circuit


𝑉0 𝑅𝑖
𝐴𝑣 = = −𝑔𝑚 𝑟0 ||𝑅𝐷
𝑉𝑠 𝑅𝑖 + 𝑅𝑆
Output resistance of the circuit, using KCL at node point D

𝑉𝑥 𝑉𝑥
𝐼𝑥 = +
𝑅𝐷 𝑟0
1 𝐼 1 1
Or, = 𝑉𝑥 = 𝑅 + 𝑟
𝑅0 𝑥 𝐷 0

Or, 𝑅0 = 𝑅𝐷 ԡ𝑟0

EXAMPLE 7.2

Determine the small-signal voltage gain, input and


output resistance of a common-source amplifier as
shown in Figure. The circuit parameters are, VDD = 4.5
V, RD = 4.7 KΩ, R1 = 120 KΩ, R2 = 47 KΩ and RSi = 4 KΩ.
The transistor parameters are: VTN = 0.4 V,
Kn = 0.6 mA/V2 and λ = 0.025 𝑉 −1.
Common-source NMOS circuit
with voltage divider biasing
DC Solution: The dc or quiescent gate-to-source voltage
𝑅2 47
𝑉𝐺𝑆𝑄 = 𝑉𝐷𝐷 = 4.5 = 1.266 V
𝑅1 + 𝑅2 120+47

Assume that the transistor is biased in the saturation region.


So the drain current
2
𝐼𝐷𝑄 = 𝐾𝑛 𝑉𝐺𝑆𝑄 − 𝑉𝑇𝑁
2
= 0.6 1.266 − 0.4
= 0.449 mA

The drain-to-source voltage

𝑉𝐷𝑆𝑄 = 𝑉𝐷𝐷 − 𝐼𝐷𝑄 𝑅𝐷


= 4.5 − 0.449 4.7
= 2.389 V
𝑉𝐷𝑆 (sat) = 𝑉𝐺𝑆𝑄 − 𝑉𝑇𝑁 = 1.266 − 0.4 = 0.866 V
It is seen that 𝑉𝐷𝑆𝑄 > 𝑉𝐷𝑆 (sat)
Or 𝑉𝐷𝑆𝑄 (2.389 V) > 𝑉𝐷𝑆 (sat) (0.866 V)
So the transistor is confirmed biased in the saturation region, as we initially assume.
Transconductance of the NMOS transistor

𝑔𝑚 = 2 ∙ 𝐾𝑛 𝐼𝐷𝑄 = 2 ∙ 0.6 0.449 = 1.038 mA/V

The drain/ output resistance of the transistor


1 1
𝑟0 = = = 89.08 kΩ
𝜆 𝐼𝐷𝑄 0.025 0.449

AC Solution:

Input resistance of the amplifier


𝑅𝑖 = 𝑅1 ||𝑅2 = 120||47 = 33.77 kΩ
Small signal ac equivalent circuit
Small signal voltage gain of the amplifier
𝑉𝑜 = −𝑔𝑚 𝑉𝑔𝑠 𝑟𝑜 ||𝑅𝐷

𝑅𝑖
𝑉𝑜 = −𝑔𝑚 𝑉 𝑟 ||𝑅
𝑅𝑖 + 𝑅𝑆𝑖 𝑠 𝑜 𝐷
𝑅𝑖 33.77
𝐴𝑣 = −𝑔𝑚 𝑟0 ||𝑅𝐷 = − 1.038 89.08||4.7 = −4.14
𝑅𝑖 +𝑅𝑆𝑖 33.77+4
Output resistance of the amplifier
𝑉𝑔𝑠 = 0 so, 𝑔𝑚 𝑉𝑔𝑠 = 0
𝑉𝑥 𝑉𝑥
𝐼𝑥 = +
𝑅𝐷 𝑟0
1 𝐼 1 1
Or, = 𝑉𝑥 = 𝑅 + 𝑟
𝑅0 𝑥 𝐷 0

Or, 𝑅0 = 𝑅𝐷 ԡ𝑟0 = 4.7ԡ89.08 = 4.46 kΩ


Common-Source Amplifier with Source Resistor

PMOS common-source Small-signal ac


circuit with source resistor equivalent circuit

DC analysis
𝑅1
𝑅𝑇𝐻 = 𝑅1 ||𝑅2 and 𝑉𝑇𝐻 = 𝑉𝐺 = 𝑉𝐷𝐷 − 𝑽+
𝑅1 + 𝑅2

The small-signal output voltage


𝑉0 = −𝑔𝑚 𝑉𝑠𝑔 𝑟0 ||𝑅𝐷
Applying KVL for the source-gate loop
𝑉𝑖 = −𝑉𝑠𝑔 + 𝑔𝑚 𝑉𝑠𝑔 𝑅𝑆
−𝑉𝑖
Or, 𝑉𝑠𝑔 = 1+𝑔
𝑚 𝑅𝑆

From these equations small-signal voltage gain


𝑉 −𝑔 𝑅
𝐴𝑣 = 𝑉0 = 1+𝑔𝑚 𝑅𝐷
𝑖 𝑚 𝑆

The input resistance of the amplifier


𝑅𝑖 = 𝑅1 ||𝑅2
Small-signal ac
equivalent circuit
EXAMPLE 7.3
Determine the small-signal voltage gain of the circuit as shown in figure. The PMOSFET
parameters are 𝐾𝑝 = 1.0 mA/V 2 , 𝑉𝑇𝑃 = −1.5 V and λ = 0. The drain current IDQ = 1.2 mA.

Solution: Transconductance 𝑔𝑚 = 2 ∙ 𝐾𝑝 𝐼𝐷𝑄 = 2 ∙ 1.0 1.2 = 2.19 mA/V

1 1
Output resistance of the transistor 𝑟0 = λ I = 0×1.2 = ∞
DQ

−𝑔𝑚 𝑅𝐷 − 2.19 10
Small-signal voltage gain 𝐴𝑣 = = = −2.89
1+𝑔𝑚 𝑅𝑆 1+ 2.19 3
Common-Source Amplifier with Source Bypass Capacitor

Small-signal equivalent circuit, assuming the source bypass


NMOS common-source circuits capacitor acts as a short circuit and the transistor small
with source bypass capacitor signal output resistance 𝑟0 = ∞.

Output voltage,
𝑉0 = −𝑔𝑚 𝑉𝐺𝑆 𝑅𝐷

Since 𝑉𝑖 = 𝑉𝑔𝑠 , the small signal voltage gain


𝑉0 𝑉
𝐴𝑣 = = 𝑉 0 = −𝑔𝑚 𝑅𝐷 = − 1.414 7 = − 9.9
𝑉𝑖 𝐺𝑆
The Common-Drain (Source Follower) Amplifier

NMOS source-follower or Small-signal equivalent circuit


common-drain circuit

Input resistance of the amplifier


𝑅𝑖 = 𝑅1 ||𝑅2

Output voltage, 𝑉0 = 𝑔𝑚 𝑉𝑔𝑠 𝑅𝑆 ||𝑟0


Writing a KVL equation for input loop
𝑉𝑖𝑛 = 𝑉𝑔𝑠 + 𝑉0 = 𝑉𝑔𝑠 + 𝑔𝑚 𝑉𝑔𝑠 𝑅𝑆 ||𝑟0
𝑉𝑖𝑛
Or, 𝑉𝑔𝑠 = 1+𝑔
𝑚 𝑅𝑆 ||𝑟0

𝑅𝑖
And, 𝑉𝑖𝑛 = 𝑉
𝑅𝑖 + 𝑅𝑆𝑖 𝑖

Small signal voltage gain


Small-signal equivalent circuit
𝑉0 𝑔𝑚 𝑅𝑆 ||𝑟0 𝑅𝑖
𝐴𝑣 = =
𝑉𝑖 1 + 𝑔𝑚 𝑅𝑆 ||𝑟0 𝑅𝑖 + 𝑅𝑆𝑖

Output Resistance of the Amplifier

Using KCL at the output node


𝑉𝑥 𝑉𝑥
𝐼𝑥 + 𝑔𝑚 𝑉𝑔𝑠 = +
𝑅𝑆 𝑟0

1
Or, 𝑅0 = ቛ 𝑅𝑆 ԡ𝑟0
𝑔𝑚
The Common-Gate Amplifier

Small-equivalent circuit, neglecting the


NMOS common-gate circuit
transistor small signal output resistance 𝑟0

Small signal voltage gain


𝑉0 𝑔𝑚 𝑅𝐷 ԡ𝑅𝐿
𝐴𝑣 = =
𝑉𝑖 1 + 𝑔𝑚 𝑅𝑆𝑖

The input and output resistance of the circuit

1
𝑅𝑖 = and 𝑅0 = 𝑅𝐷 ||𝑅𝐿
𝑔𝑚

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