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Devices and Circuits Ii: Small Signal Parameters of MOSFET

The document summarizes key small signal parameters and models of MOSFETs and JFETs for linear amplifier applications. It discusses: 1) MOSFET transconductance, output resistance, and amplification factor and how they are controlled by operating point. 2) Small signal models of MOSFETs and how drain current varies with gate-source voltage. 3) Effects such as body effect and maximum signal swing for linear operation. 4) Similar small signal parameters and models are discussed for JFETs. 5) Worked examples are provided to calculate voltage gain and resistances for common-source amplifiers using MOSFETs and JFETs.

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104 views5 pages

Devices and Circuits Ii: Small Signal Parameters of MOSFET

The document summarizes key small signal parameters and models of MOSFETs and JFETs for linear amplifier applications. It discusses: 1) MOSFET transconductance, output resistance, and amplification factor and how they are controlled by operating point. 2) Small signal models of MOSFETs and how drain current varies with gate-source voltage. 3) Effects such as body effect and maximum signal swing for linear operation. 4) Similar small signal parameters and models are discussed for JFETs. 5) Worked examples are provided to calculate voltage gain and resistances for common-source amplifiers using MOSFETs and JFETs.

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Mạnh Cường Trần
Copyright
© Attribution Non-Commercial (BY-NC)
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Small Signal Parameters of MOSFET

EE 332

DEVICES AND CIRCUITS II


Lecture 8 Small-Signal Modeling and Linear Amplification (3)
Since gate is insulated from channel by gate-oxide input resistance of transistor is infinite. Small-signal parameters are controlled by the Q-point. For same operating point, MOSFET has higher transconductance and lower output resistance that BJT.

Transconductance: I D gm = y = = 2K n I 21 V V D GS TN 2 Output resistance: 1 +V 1 DS 1 = ro = y I I D D 22 Amplification factor for VDS<<1:

= gmro = f

+V DS 1 2Kn ID I D

Small Signal Operation of MOSFET


2 Kn v v V V v for TN DS GS TN 2 GS Kn 2 V i = I + i = V + 2 v gs V V + v gs 2 D D d GS 2 TN TN GS Kn 2 2 v gs V i = V + v gs d 2 TN GS i D =

Body Effect in Four-terminal MOSFET


Drain current depends on threshold voltage which in turn depends on vSB. Back-gate transconductance is: i i g = D = D mb v v BS Q po int SB Q po int

( (

) )

V v gs << 0 .2 V TN GS Since MOSFET can be biased with (VGS - VTN) equal to several volts, it can handle much larger values of vgs than corresponding values of vbe for BJT. Change in drain current that corresponds to small-signal operation is: i V 0 .2(V ) TN 0 .4 d = gm v = GS gs V V I I TN GS D D 2

For linearity, id should be proportional to vgs

i = D V TN

V TN = ( gm ) = gm v SB Q po int

0<<1 is called back-gate tranconductance parameter. Bulk terminal is a reverse-biased diode. Hence, no conductance from bulk terminal to other terminals.

37

Small-Signal Model for PMOS Transistor


For pnp transistor v =V -v SG GG gg i = I -i C D d Positive signal voltage vgg reduces source-gate voltage of the PMOS transistor causing decrease in total current exiting drain, equivalent to increase in signal current entering drain.

Small-Signal Analysis of Complete C-S Amplifier: AC Equivalent


Ac equivalent circuit is constructed by assuming that all capacitances have zero impedance at signal frequency and dc voltage sources represent ac grounds. Assume that Q-point is already known.

=R R 1 2

Small-Signal Analysis of Complete C-E Amplifier: Small-Signal Equivalent


v v Avt = v d = v o = g m R L g gs
Overall voltage gain from source vi to output voltage across R3 is: v v v v gs gs o Av = vo = = A vt v gs v v i i i R G Av = g m R L +R R I G

C-S Amplifier Voltage Gain: Example


Problem: Calculate voltage gain Given data: n = 0.5 mA/V2, VTN = 1V, = 0.0133 V-1, Q-point is (1.45 mA, 3.86 V), R1 = 430 k, R2 = 560 k, R3 = 100 k, RD = 4.3 k, RI = 1 k. Assumptions: Transistor is in active region. Signals are low enough to be considered small signals. Analysis: gm = 2K I (1+ V ) = 1.23mS R G = R1 R = 243 k n DS 2 DS 1 +V ro = DS = 54.5k R L = ro R D R 3 = 3 . 83 k I D 2I R D = 0.48V G = 4.69 =13.4dB V 0.2 V v 0.2 Av = gmR i TN L GS Kn R +R G I

= ro R R D 3

Terminal voltage gain between gate and drain is:

38

Small-Signal Model Simplification


If we assume

C-S Amplifier Input Resistance

R << R I G

Av Avt = g m R = g m r R R o L D 3 This implies that total signal voltage at input appears across gate-source terminals.
Generally R3 >> RD and load resistor << ro. Hence, total load resistance on drain is RD. For this case, common design allocates half the power supply for voltage drop across RD and (VGS - VTN ) =1V I R D D Av g m R = = V D DD V V TN GS 2 Also, if load resistor is forced to approach ro, RD and R3 are infinite, voltage gain is limited by amplification factor, f of MOSFET itself.

Input resistance of C-S amplifier is much larger than that of corresponding C-E amplifier.

v x = ix R G R =R G in

C-S Amplifier Output Resistance

Sample Analysis of C-S Amplifier


Analysis: Dc equivalent circuit is constructed.

For comparable bias points, output resitances of C-S and C-E amplifiers are similar. In this case, vgs=0.
Problem: Find voltage gain, input and output resistances. Given data: n = 500 A/V2, VTN = 1V, = 0.0167 V-1

I = 1

V DS 5 10 6

v Rout = x = R ro R D D As ro>> RD. ix

= 10 2 10 4 ( I + I ) D 1 DS Kn V I = (0 . 4V )2 D TN DS 2 V = 5V DS V = 2V I = 25 0 A D GS V

39

Sample Analysis of C-S Amplifier (contd.)


Next we construct the ac equivalent and simplify it.
R =R R = 1M G1 G 2 in

Small Signal Parameters of JFET


i 1 =y = G 11 v r GS
gm = y

I +I = G SG V T Q point
= I V GS D V P 2

gm = 2Kn I (1+ V ) = 5.20 104S DS DS +V ro = DS = 260k I D 1


R out = ro R R = 18 . 2 k D G3 R vo in = 7 .93 Av = = gm ( Rout R ) 3 R + R v I i in

v i =I 1 GS D DSS V P

21

i v

1+ v

DS

GS Q point

for v DS vGS V P
exp GS 1 i =I G SG V T

I 2 DSS (V V ) P V 2 GS P

i 1 =y = D 22 ro v DS

=
Q point

D +V DS 1

Small Signal Model of JFET


For small signal operation, condition on input is:
V vgs << 0.2 V P GS

Sample Analysis of JFET C-S Amplifier


Analysis: Dc equivalent circuit is constructed. G = 0, S = D. V = 2000 I 2 D GS V GS = (2 103)(110 3) 1 V GS ( 1) Choose VGS less negative than VP.

Since JFET is normally operated with gate junction reversebiased,

I = I SG G rg =

Amplification factor is given by: 1 +V I DS 2 DSS = gmro = 2 I f V V V D GS P P

Problem: Find voltage gain, input and output resistances. Given data: DSS = 1 mA, VP = -1V, = 0.02 V-1 Assumptions: Pinch-off region of operation.

V = 0 .5V GS I = 0 .250 mA D

12 = 27,000 I V DS

+V + 2000 I D DS S = 4 .75V

40

Sample Analysis of JFET C-S Amplifier (contd.)


Next we construct the ac equivalent and simplify it.

Amplifier Power Dissipation


Static power dissipation in amplifiers is determined from their dc equivalent circuits.

R = R = 1M G in

gm =

2 I I (1+ V ) = 1.05mS DSS DS DS V P R out = ro R = 24 . 0 k D 1 +V R v in = 20 .3 ro = DS = 219k Av = o = gm ( Rout R ) 3 I v R + R DS i in I

Total power dissipated in C-B and E-B junctions is:


P =V I +V I where V =V +V D CE C BE B CE CB BE

Total power dissipated in transistor is:


P =V I +V I =V I D DS D GS G DS D Total power supplied is: P =V I S DD D

Total power supplied is:


P =V I +V I S CC C EE E

Amplifier Signal Range


0 .7 V v =V V sin t But v CE M CE CE V M V CE V BE

(t ) = I R + V sin t 0 R M C C C But V I R M C C

Also v

End of Lecture 8

min V R ,V I BE CE C C

Similarly for MOSFETs and JFETs,


V M M min I

R , (V (V V )) D D DS TN GS R , (V (V V )) D D DS P GS

min I

41

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