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IGBT

1. The document discusses power MOSFETs, BJTs, and IGBTs. It provides comparisons of their structures, characteristics, and applications. 2. IGBTs combine qualities of MOSFETs and BJTs - they have high input impedance like MOSFETs but lower on-state power loss like BJTs. IGBTs do not experience secondary breakdown like MOSFETs. 3. The document explains IGBT structure, equivalent circuit, and working. It shows voltage vs current and switching characteristics of IGBTs. Turn-on and turn-off times are also defined.

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HOD EEE TRP
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369 views13 pages

IGBT

1. The document discusses power MOSFETs, BJTs, and IGBTs. It provides comparisons of their structures, characteristics, and applications. 2. IGBTs combine qualities of MOSFETs and BJTs - they have high input impedance like MOSFETs but lower on-state power loss like BJTs. IGBTs do not experience secondary breakdown like MOSFETs. 3. The document explains IGBT structure, equivalent circuit, and working. It shows voltage vs current and switching characteristics of IGBTs. Turn-on and turn-off times are also defined.

Uploaded by

HOD EEE TRP
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
You are on page 1/ 13

PMOSFET

1
High PMOSFET

2
Transfer Characteristics

VGST is in the order of 2 to 3 V.

3
Output & Switching Characteristics

4
Comparison of MOSFET and BJT
MOSFET BJT
• Power MOSFET has low • BJT has higher switching
switching losses but its on- losses and low conduction
state and conduction losses losses.
are more. • Current controlled device
• Voltage controlled device • Has negative temperature
• Has positive temperature coefficient.
coefficient. • Secondary breakdown
• Secondary breakdown does occurs.
not occurs. • BJTs are available in 1200V,
• MOSFETs are available in 800A.
500V, 140A. 5
IGBT

6
Basics
• Combination of best qualities from BJT and
PMOSFET.
• Possess high impedance.(MOSFET)
• Has low on-state power loss.(IGBT)
• Free from second breakdown problem.
• Other names
– MOSIGT
– COMFET
– GEMFET
– IGT
7
Structure
• Constructed same as
PMOSFET.
• n+ layer in drain
(PMOSFET) is substituted
by p+ layer (injector
layer) as collector (IGBT).
• n- layer is called drift
region.

8
Equivalent Circuit
• Rd is resistance offered by
n- drift region.
• IGBT structure has a
parasitic thyristor in it.

9
Working
• When collector is made positive with respect to emitter, IGBT
gets forward biased.
• Junction J1 & J2 are reverse biased.
• So no current flows from collector to emitter.
• Gate-emitter voltage crosses threshold value (VGET), n-channel
formed in upper part of p region.
• n-channel short circuits n- region with n+ emitter region.
• Electrons flow from n+ emitter region to n- drift region.
• Simultaneously, p+ collector region injects holes to n- drift
region  injection carrier density in n- region increases 
conduction takes place.

10
VI & Transfer Characteristics

11
Switching Characteristics

12
Explanation
• Turn-on time
– Time between instant of forward blocking and
forward on-state.
– ton = tdn+tr
• Turn-off time
– toff = tdf+tf1+tf2
– tdf  delay time
– Tf1  initial fall time
– Tf2  final fall time
13

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