Module 1 - B
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Chethana HsModule 1 - B
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Chethana HsModule 1
MOS Transistor Theory
Introduction
• Metal-Oxide-Semiconductor (MOS) transistor was
introduced in terms of its operation as an ideal
switch.
• Performance and power of a chip depend on the
current and capacitance of the transistors and wires.
• The three-terminal symbols in Figure 2.1(a) are used
in the great majority of schematics.
• If the body (substrate or well) connection needs to be
shown, the four-terminal symbols in Figure 2.1(b) will
be used. Figure 2.1(c) shows an example of other
symbols that may be encountered in the literature
Accumulation
• In Figure 2.2(a) , a negative voltage is applied to the gate, so there is negative charge on the
gate. The mobile positively charged holes are attracted to the region beneath the gate. This is
called the accumulation mode.
Depletion
• In Figure 2.2(b), a small positive voltage is applied to the gate, resulting in some positive charge on
the gate.
• The holes in the body are repelled from the region directly beneath the gate, resulting in a
depletion region forming below the gate.
Inversion
• In Figure 2.2(c), a higher positive potential exceeding a critical threshold voltage Vt is applied,
attracting more positive charge to the gate.
• The holes are repelled further and some free electrons in the body are attracted to the region
beneath the gate. This conductive layer of electrons in the p-type body is called the inversion
layer.
• Figure 2.3(a) The gate-to-source voltage Vgs is less than the threshold voltage Vt.
• The source and drain have free electrons.
• The body has free holes but no free electrons.
• Suppose the source is grounded.
• The junctions between the body and the source or drain are zero-biased or reverse-biased, so little or no current
flows.
• We say the transistor is OFF, and this mode of operation is called cutoff.
• In Figure 2.3(b), the gate voltage is greater than the
threshold voltage.
• Now an inversion region of electrons (majority carriers)
called the channel connects the source and drain,
creating a conductive path and turning the transistor
ON.
• The number of carriers and the conductivity increases
with the gate voltage.
• The potential difference between drain and source is Vds
= Vgs - Vgd .
• If Vds = 0 (i.e., Vgs = Vgd), there is no electric field
tending to push current from drain to source.
• When a small positive potential Vds is applied to the
drain (Figure 2.3(c)), current Ids flows through the
channel from drain to source.
• This mode of operation is termed linear, resistive, triode,
nonsaturated, or unsaturated; the current increases with
both the drain voltage and gate voltage.
• If Vds becomes sufficiently large that Vgd < Vt , the channel is no longer inverted near the drain and becomes
pinched off (Figure 2.3(d)).
• However, conduction is still brought about by the drift of electrons under the influence of the positive drain
voltage.
• As electrons reach the end of the channel, they are injected into the depletion region near the drain and
accelerated toward the drain.
• Above this drain voltage the current Ids is controlled only by the gate voltage and ceases to be influenced by
the drain.This mode is called saturation.