Power Electronics 21-10-2023 JSSCOE
Power Electronics 21-10-2023 JSSCOE
Electronics
Students to add more details or information to
thie respective topics.
Index
Introduction to Power Electronics
Power semiconductor diodes and transistors
Power Semiconductor Device History
Power Semiconductor Device Classification
Power Semiconductor Diode
Types of Power Diodes
Advantages, Disadvantages & Applications of Power
Diode(Pranav)
Transistor
Types of Transistor & Their Application (Rochana)
Rectifier (Poornima)
Half Wave Rectifier
Full Wave Rectifier Electronics
Thyristors (Prathiksha)
SCR (Thilak D)
Thyristor Commutation Techniques (Arifa)
Index
BJT
MOSFET
IGBT
Phase controlled rectifiers
Choppers
Inverters
AC Voltage regulators
Cycloconverters
Power factor improvements
Thermal Management
Power Electronics
EMC Compliance
Introduction to Power Electronics
Power electronics is the application of electronics to the control and conversion
of electric power.
Power Electronics refers to the process of controlling the flow of current and
voltage and converting it to a form that is suitable for user loads.
The most desirable power electronic system is one whose efficiency and
reliability is 100%.
Electronics deals with the solid-state devices and circuits for signal processing to
meet the desired control objectives.
The diagram shows the components of a Power Electronic system and how they
are interlinked.
Applications of Power Electronics are classified into two types Power Electronics
Static Applications
Drive Applications
Power Semiconductor Device History
Power electronics started with the development of the mercury arc rectifier.
Invented by Peter Cooper Hewitt in 1902, it was used to convert alternating
current (AC) into direct current (DC).
In 1947 the bipolar point-contact transistor was invented by Walter H. Brattain
and John Bardeen under the direction of William Shockley at Bell Labs.
In 1948 Shockley's invention of the bipolar junction transistor (BJT) improved
the stability and performance of transistors, and reduced costs.
Mercury Arc Rectifier
By the 1950s, higher power semiconductor diodes became available and
started replacing vacuum tubes. In 1956 the silicon controlled rectifier (SCR)
was introduced by General Electric, greatly increasing the range of power
electronics applications.
By the 1960s the improved switching speed of bipolar junction transistors had
allowed for high frequency DC/DC converters.
In 1976 power MOSFETs became commercially available.
In 1982 the Insulated Gate Bipolar Transistor (IGBT) was introduced BJT
Power Semiconductor
Device Classification
Power semiconductor switching devices can be classified
on the basis of
Uncontrolled turn on and off (diodes)
Controlled turn on and uncontrolled turn off (SCR)
Controlled turn on and off (BJT, MOSFET, GTO, IGBT)
Types of Semiconductor
Continuous gate signal requirement (BJT, MOSFET,
IGBT) Types of
Rectifiers
Pulse gate requirement (SCR, GTO)
Bipolar voltage-withstanding capability (SCR, GTO) Single Three
Phase Phase
Unipolar voltage withstanding capability (BJT,
MOSFET, GTO) Uncontrolled
Half
Controlled
Fully
Controlled Uncontrolled
Half
Controlled
Fully
Controlled
Bidirectional current capability (TRIAC) Half wave Full wave Half wave Half wave
Unidirectional current capability (SCR, GTO, BJT, Split Supply Full Bridge Full Bridge
MOSFET, DIODE)
Bridge
Types of Rectifier
Power Semiconductor Diode
Diode is a two terminal P-N junction semiconductor device, with
terminals anode (A) and cathode (C).
The symbol of the Power diode is same as signal level diode.
It consists of two terminal
Anode Diode Symbol
Cathode
The VI Characteristics of diode shows the behavior of the diode.
If terminal anode experiences a higher potential compared to terminal
cathode, the device is said to be forward biased and a forward
current will flow from anode to cathode.
Under forward-bias condition, signal diode current increases
exponentially and then increases linearly.
In forward-bias there is 0.7 V barrier potential is there it is called as
cut in voltage.
When a diode is reverse biased, it does not conduct and the diode
VI Characteristic
then experiences a small leakage current flows due to minority
carriers.
Types of Power
Diodes
Silicon Rectifier Diode
Diodes conduct current more easily in one direction than in the other. This process is
used to produce rectification.
Silicon rectifiers have high forward-to-reverse current ratios. This is the ratio of current
allowed in the forward direction compared to the current allowed in the reverse direction.
Zener Diodes
An electronic device that can be used as a voltage regulator is the Zener diode.
The Zener has unique reverse bias qualities that make it differ from the typical diode.
Schottky Diode
Diodes
Schottky Diode has a metal on one side of the junction and an N-Type semiconductor
on the other side.
These diodes are used where a low forward voltage drop (usually 0.3V) is needed in low
output voltage circuits.
Light Emitting Diodes
When connected in the forward bias direction, it emits light. Light emitting diodes are
made from semiconductor compounds Schottky Diode
Power Diode
Advantages and Disadvantages of Power Diode
The advantages and disadvantages of power diode include the following.
The PN-junction region of this diode is large & can supply huge current, however, the capacitance of this junction can
also be large, which works at a lower frequency & it is generally used for rectification only.
It will resolve AC at high current and a high voltage.
The main disadvantage is its size & probably needs to be fixed to a heat sink while conducting a high current.
It needs specialized hardware for installing and insulating from the metal frames which are available in the surrounding.
lightly doped.
Base-emitter junction is forward biased
Collector-base junction is reverse biased
Types of Transistor & Their Application
There are two types of transistors are there
Bipolar Junction Transistor
A bipolar junction transistor, shortly termed as BJT is a current controlled
type materials.
Likewise, the PNP transistor is made by placing an n-type material between
Rectifier
Half Wave Rectifier
The half-wave rectifier itself states that the rectification is done only for half of
the cycle.
The AC signal is given through an input transformer which steps up or down
according to the usage.
Mostly a step down transformer is used in rectifier circuits, so as to reduce the
input voltage.
The input signal given to the transformer is passed through a PN junction diode
which acts as a rectifier.
This diode converts the AC voltage into pulsating dc for only the positive half
cycles of the input.
The Working of half wave rectifier.
The input signal is given to the transformer which reduces the voltage levels.
The output from the transformer is given to the diode which acts as a rectifier.
This diode gets ON conducts for positive half cycles of input signal.
Hence a current flows in the circuit and there will be a voltage drop across the
load resistor.
Half Wave Rectifier
The diode gets OFF doesn't conduct for negative half cycles and hence the
output for negative half cycles will be, Id=0 and Vo=0
Full Wave
Rectifiers
A Rectifier circuit that rectifies both the positive and negative half cycles
can be termed as a full wave rectifier as it rectifies the complete cycle.
The construction of a full wave rectifier can be made in two types.
Center-tapped Full wave rectifier
Bridge full wave rectifier
1.Center-tapped Full wave rectifier
A rectifier circuit whose transformer secondary is tapped to get the
desired output voltage, using two diodes alternatively, to rectify the
complete cycle is called as a Center-tapped Full wave rectifier circuit.
Working of Center-tapped Full wave rectifier is.
When the positive half cycle of the input voltage is applied, the point M
at the transformer secondary becomes positive with respect to the
point N. This makes the diode D1 forward biased.
When the negative half cycle of the input voltage is applied, the point
M at the transformer secondary becomes negative with respect to the
point N. This makes the diode D2 forward biased.
Center tap
Full Wave Rectifiers
2. Bridge full wave rectifier
Four diodes called D1,D2, D3 and D4 are used in constructing a bridge type network
so that two of the diodes conduct for one half cycle and two conduct for the other half
cycle of the input supply.
Working of a Bridge Full-Wave Rectifier
The full wave rectifier with four diodes connected in bridge circuit is employed to
positive with respect to the point Q. This makes the diode D1and D3 forward
biased while D2 and D4 reverse biased. These two diodes will now be in series
with the load resistor.
Hence the diodes D1 and D3 conduct during the positive half cycle of the input.
When the negative half cycle of the input supply is given, point P becomes
negative with respect to the point Q. This makes the diode D1 and D3 reverse
biased while D2 and D4 forward biased. These two diodes will now be in series
with the load resistor.
Hence the diodes D2 and D4 conduct during the negative half cycle of the input.
When there is no voltage across the gate terminal, then the device does not conduct. When there is the maximum voltage
across the gate terminal, then the device shows enhanced conductivity.
N-Channel D-MOSFET
In N-channel D-MOSFET, the source and drains electrode is placed on small N-type
layers. While the gate electrode is placed on top of an insulating metal oxide layer that
electrically insulates it from the channel beneath it. The channel made for N-type
material is fabricated on top of a P-type substrate.
The channel as it is made of N-type material consists of electrons as charge carriers.
The voltage at the gate produces an electric field that affects the flow of these charge
carriers.
When the gate is connected in reverse bias i.e. negative voltage VGS < 0 volt is applied,
the holes from the P-substrate will attract towards the gate, depleting it of the electrons
and reduce the channel size. At certain negative VGS the MOSFET will stop conduction
as there will be no channel. This VGS is threshold voltage Vth. N-channel MOSFET has –
Vth,
When the gate is connected in reverse bias i.e. negative voltage VGS < 0 volt is applied,
the holes from the P-substrate will attract towards the gate, depleting it of the electrons
and reduce the channel size. At certain negative VGS the MOSFET will stop conduction
as there will be no channel. This VGS is threshold voltage Vth. N-channel MOSFET has –
N-D-MOSFET
Vth,
P-Channel D-MOSFET
The P-channel D-MOSFET has the same construction as an N-channel except for
the drain, source electrodes lie on P-type layers. and the channel is made of P-layer
over an N-type substrate. The charge carriers used are holes. The holes have one
disadvantage over electrons. They are quite heavier than electrons and therefore
can cause it to lose some speed in operation.
Under normal conditions, it can conduct current between its source and drain as
long as there is a voltage between them. the gate voltage can affect the channel
width to increase or decrease it.
When a positive VGS is applied at its gate, the electric field will cause to attract the
electrons from the N-type substrate that combines with the holes thus depleting the
channel of charge carriers. It reduces the width of the channel and the amount of
current. at a certain point, the VGS completely eliminates the channel and stops the
flow of current.
Therefore, P-channel D-MOSFET has a positive threshold voltage i.e. it switches off
when positive VGS is applied and switches on when there is no VGS. Applying negative
voltage will induce more holes into the channel causing it to increase or enhance its P-D-MOSFET
current conduction.
N-Channel E-MOSFET
The N-Channel E-MOSFET has the same structure as D-MOSFET except there is no channel
during manufacturing. The channel is induced by the application of a voltage across its gate.
N-channel E-MOSFET will not conduct current between its source and drain terminal when the
VGS = 0 volts.
Because there is no channel to allow current flow. Applying a positive voltage +VGS to the gate
produces an electric field beneath the gate layer.
It results in attracting the electrons from the P-substrate and pushing back holes away from the
insulating layer. A channel in induced which allows the current between the source and drain.
The VGS at which the channel is induced is called Vth threshold voltage and increasing the
voltage above Vth causes to enhance the channel width.
Operating Regions of N-Channel E-MOSFET
Cutoff Region: In this region, the gate-source voltage VGS ≤ 0v. There is no drain current ID =
0 regardless of the value of VDS. It operates as a switch.
Saturation Region: In this region, the VGS > 0v and the VDS > VGS. The MOSFET allows
maximum drains current IDSS which depends on the level of VGS.
N-E-MOSFET
Linear or Ohmic Region: In this region, VGS > 0 and the VDS < VGS. the MOSFET acts as an
amplifier. In this region, the current ID increases with the VDS while its amplification depends on
P-Channel E-MOSFET
P-channel E-MOSFET has the same structure as P-channel D-MOSFET except for the
absence of channel. There is no channel during its construction. It is induced by applying
VGS.
When –VGS is applied to the gate, positive charges (holes) gather beneath the insulating
layer and the electrons are pushed back. The holes accumulate together to form a channel
between the source and drain. Now, if the voltage between source and drain is applied, it will
start to conduct current.
Same as N-channel, it does not conduct when the VGS = 0 V. reducing the voltage below Vth,
the channel width increases, allowing more current to flow through it.
Operating Regions of N-Channel E-MOSFET
Cutoff Region: In this region, the gate-source voltage VGS ≥ 0v. There is no drain current
ID = 0 regardless of the value of VDS. It operates as a switch.
Saturation Region: In this region, the VGS < 0v and the VDS > VGS. The MOSFET allows
maximum drains current IDSS which depends on the level of VGS.
Linear or Ohmic Region: In this region, VGS < 0 and the VDS < VGS. The MOSFET acts as
an amplifier. In this region, the current ID increases with the VDS while its amplification P-E-MOSFE
depends on the VGS as shown in the VI characteristics. T
IGBT
IGBT (Insulated Gate Bipolar Transistor) is a three terminal power switch having high
input impedance like PMOSFET and low on-state power loss as in BJT (Bipolar
Transistor Junction).
Thus, IGBT is a combined form of best qualities of both BJT and PMOSFET.
This is the most popular power switch among the power-electronics engineers and find a
great variety of applications.
IGBT is a three-terminal device.
Gate (G),
Emitter (E)
Collector (C).
IGBT is also known as metal oxide insulated gate transistor (MOSIGT), conductivity-
modulated field effect transistor (COMFET) or gain-modulated FET (GEMFET). It was symbol of IGBT
initially called Insulated Gate Transistor (IGT
Construction of IGBT
An IGBT is constructed on a p+ layer substrate. On p+ substrate, a high resistivity
n- layer is epitaxially grown.
As in other semi-conductor devices, the thickness of n- layer determines the
voltage blocking capability of IGBT.
On the other side of p+ substrate, a metal layer is deposited to form the Collector
(C) terminal.
Now, p regions are diffused in the epitaxially grown n- layer. Further, n+ regions
are diffused in p region. A basic construction structure of IGBT is shown in figure
below.
Now, an insulating layer of Silicon Dioxide (SiO2) is grown on the surface. This
insulating layer is etched in order to embed metallic Emitter and Gate terminals.
The p+ substrate is also called injector layer because it injects holes into n- layer.
The n- layer is called drift region. The next p layer is called the body of IGBT.
Construction of IGBT
The n- layer in between the p+ & p region serves to accommodate the depletion
layer of pn- junction i.e. J2.
VI
Characteristics of
IGBT
Thus IGBT is a voltage-controlled device with an insulated gate. The drain
current increases with increase in Vgs at a constant value of Vds.
The IGBT possesses all the advantages of MOSFET due to the insulated gate. It
also has all the advantages of the BJT due to bipolar conduction.
As seen from the VI characteristics of IGBT the drain current (or the collector
current) increases with an increase in the voltage between gate and source
(Vgs).
Also, note that the gate to source voltage Vgs is positive. Vds is the forward
breakdown voltage.
This is the value of Vds at which the avalanche breakdown takes place. At this
point the voltage across the device and current through it both are high.
Therefore the power dissipated in the device will be very large and will damage it.
VI characteristics of IGBT
The device must be therefore operated below this voltage.
Phase-Controlled
Rectifiers
Phase-controlled rectifiers, also known as thyristor rectifiers or
controlled rectifiers, are electronic devices used to convert alternating
current (AC) into direct current (DC) in a controlled manner. They
utilize thyristors (also known as silicon-controlled rectifiers or SCRs) to
control the flow of current through the rectifier.
The primary components of a phase-controlled rectifier include
thyristors, a transformer, and a load. Thyristors are semiconductor
devices that act as controllable switches to regulate the flow of
current. The transformer is used to step down or step up the voltage
as needed.
The term PCR or Phase controlled rectifier is one type of a rectifier
Phase-Controlled Rectifiers
circuit in which the diodes are replaced by Thyristors or SCRs (Silicon
Controlled Rectifiers). Unlike a diode, a thyristor is a gate-control
electronic switch which can be turn on by gate pulse and can be turn
off when thyristor is reverse-biased. Hence, output of a PCR can be
control by controlling firing pulse (gate pulse).
Phase-Controlled Rectifiers contd…
Taking the example of the three phase PCR which shown in the diagram at
the start of this post, we can see three thyristors (the one with the symbol
like diode with a dash) in series with each phase wire .
Now when the phase Y is positive and its voltage is greater than the other
two phases we turn on the thyristor in series with the phase Y and turn off
the others, causing current to start flowing from upwards to downwards
through the DC load.
After some time, when phase R is positive and its voltage is greater than
other two, we turn on the thyristor which is in series with phase R and turn
the others off.
Current still flows from upwards to downwards through the DC load. This
process goes on, and the result is : Hence we have extracted DC voltage
from AC successfully. Phase-Controlled Rectifiers
Now, coming to how the output DC voltage is varied. The firing delay, which
is the time after which the respective thyristors turn on and off when the
phase with the greatest positive voltage changes (as shown in the graph) is
made use of here.
The firing delay is varied, hence changing the Mean DC Level that is
supplied by our circuit.
Phase-Controlled Rectifiers contd…
Advantages of PCR:
Output voltage can be control using firing pulse delay.
As thyristors are capable of handling around 100A and 1200 ~ 1500V PCR can be operated
over a large range of voltage and current.
Applications of PCR:
DC motor control in steel mills
Battery chargers
High voltage DC transmission
AC traction control using DC motors
Chopper
A chopper is a static device that converts fixed DC input voltage to a variable DC
output voltage.
It is basically a high speed ON/OFF semiconductor switch. It may be thought of as DC
equivalent of an AC transformer since they behave in an identical manner.
Chopper is fed through a constant DC voltage source and its output is variable DC
voltage.
The average value of output DC voltage may be less than or higher than the input DC
voltage source.
A simple diagram defining the chopper is shown below.
Chopper
A chopper is a DC equivalent to an AC transformer having continuously variable turn
ratio. Like a transformer, a it can be used to step-up or step-down the fixed DC input
voltage.
On this basis, there are two types of chopper:
Step-Up : A chopper whose average value of DC output voltage is more than the fixed
DC input voltage is called Step-up Chopper
Step-Down : A chopper whose average value of DC output voltage is less than the DC
input voltage is called Step-down chopper.
Step-Up Chopper
Step-up chopper (Boost Converter) is used to obtain a load
voltage higher than the input voltage V. The values of L and C
are chosen depending upon the requirement of output voltage
and current. When the chopper is ON, the inductor L is
connected across the supply. The inductor current ‘I’ rises and
the inductor stores energy during the ON time of the chopper,
tON.
When the chopper is off, the inductor current I is forced to flow
through the diode D and load for a period, tOFF. The current
Step-up Chopper
tends to decrease resulting in reversing the polarity of induced
EMF in L. Therefore voltage across load is given by
𝑑𝐼
𝑉 0=𝑉 + 𝐿 𝑖 . 𝑒. ,𝑉 0> 𝑉
𝑑𝑡
A large capacitor ‘C’ connected across the load, will provide a
continuous output voltage . Diode D prevents any current flow
from capacitor to the source. Step up choppers are used for
regenerative braking of dc motors.
Step-Down
A Step-down chopper is a static device that step downs its DC input
voltage. The value of average output DC voltage of this chopper is less
than that of its fixed DC input source voltage. This type of chopper is
more common.
Working Principle:
Before we start discussing the working principle of Step-down Chopper,
it is imperative to first have a look at its circuit diagram. The circuit Step-Down Chopper
diagram is shown in figure.
The chopper is shown within a dotted line and assumed to be a switch.
This circuit consists of inductor L, a free-wheeling diode, chopper CH,
Source and Load. Fixed DC input voltage Vs is applied and our aim is to
get the variable DC output voltage which is a function of chopper. To get
the variable DC voltage, we will switch ON and OFF the chopper CH at
some frequency called the chopping frequency (f).
Buck-Boost Converter
Referring to the basic buck-boost topology diagram above, when
the switch S is closed, the input voltage VIN is blocked by the diode
D, since D is reverse biased. Therefore the voltage has no other
option but to flow through the inductor L.
The inductor L due to its inherent reluctance property initially tries to
block the current. Due to this, initially the voltage drop across L is
high. However, slowly as the reluctance of the coil decreases and
the current through the inductor increases.
During this phase the inductor L stores the energy (voltage and Buck - Boost Converter
current) inside its winding.
Ideally this the point when the switch S needs to be opened.
When switch S is now opened, the voltage VL stored inside the
inductor reverses direction, and it passes through the diode D which
is now forward biased. In the process VL also passes through the
output capacitor and charges it fully.
Buck-Boost Converter contd…
During this phase the output capacitor stores energy inside it and gets fully charged, simultaneously the load across
VOUT also gets the energy from the inductor for ts operation.
Next, at this point if the switch is closed again, the process repeats as explained above, however now the capacitor
provides its stored energy to the load.
Depending how how fast or how slow the switch S is closed and opened, the output DC can be a stepped up or
boosted output, or it can be a stepped down or buck output.
In a real life electronic buck-boost circuit, the switch S is replaced with a BJT or a MOSFET and this device is
switched ON/OFF through an external PWM for generating a buck or a boost output.
Inverter
An inverter is an electronic device that converts direct current (DC)
into alternating current (AC). It changes the electrical polarity and
magnitude to produce a usable AC output from a DC input.
Inverters are vital for powering AC devices, especially in off-grid and
renewable energy systems.
They're used in solar power systems, uninterruptible power
supplies, and electric vehicle propulsion.
If you used an oscilloscope to look at the signal of these two types of DC TO AC
power you will see that Direct Current sits at its maximum voltage
and continues in a straight line.
That’s because the current flows directly in only one direction, which
is why it’s called direct current.
It’s a bit like a river or canal, it’s always at its peak and it flows in one
direction.
Direct Current
Inverter contd…
AC voltage regulator
Disadvantages Of Cycloconverter
Due to the usage of a large number of thyristors the control circuitry becomes complex.
Power factor is too low at the large values of firing angle.
The distortion is very high at the lower frequencies.
Smooth control for step-less output frequency is not possible.
Power Factor Improvements
The process of increasing the power factor of an electrical system,
which is the ratio of the real power to the apparent power consumed by
the system.
A low power factor can result in increased energy consumption, reduced
efficiency, and additional costs
Static Capacitor
We know that most industries and power system loads are inductive,
which causes a decrease in the system power factor due to lagging
current. To improve the power factor, static capacitors are connected
in parallel with these devices operated on low power factor.
These static capacitors supply leading current, which balances out Power Factor
the lagging inductive component of the load current.
This effectively eliminates or neutralizes the lagging component of
the load current and corrects the power factor of the load circuit to
enhance the overall efficiency.
To enhance system or device efficiency, these capacitor are installed
near large inductive loads, like induction motor and transformer, to
improve the load circuit power factor.
Power Factor Improvements contd…
For example, let’s consider a single-phase inductive load shown in Figure 1,
which is drawing lagging current (I), and the load power factor is Cosθ.
Figure 2 shows the load with a capacitor (C) connected in parallel. As a
result, a current (IC) flows through the capacitor and leads 90° from the
supply voltage. In other words, the capacitor provides leading current, and
in a purely capacitive circuit, the current leads the supply voltage by 90°,
which means the voltage lags 90° behind the current. The load current
remains (I), and the vector sum of (I) and (IC) is (I’) which lags behind the
voltage at θ2, as shown in Figure 3.
Figure 3 demonstrates that the angle of θ2 < θ1, implying that Cosθ2 is less
than Cosθ1 (Cosθ2 > Cosθ1). Therefore, the capacitor improves the load
power factor
Power Factor Improvements
It is important to note that after power factor improvement, the circuit current
is lower than the low power factor circuit current. Additionally, the active
component of current remains the same before and after power factor
improvement because the capacitor eliminates only the reactive
Component of current. Finally, the Active power (in Watts) remains the
same before and after power factor correction.
Advantages and Disadvantages
Advantages:
Low losses in static capacitors
No moving parts, therefore requiring low maintenance
Ability to work in normal conditions (i.e., ordinary atmospheric conditions)
No requirement for a foundation for installation
Lightweight, making them easy to install
Disadvantages:
A shorter lifespan for static capacitor banks (around 8-10 years)
The need to turn the capacitor bank ON or OFF when there is a change in load, which can cause switching surges in
the system.
Risk of damage if the rated voltage increases beyond its limit
Synchronous Condenser
When a synchronous motor operates at no-load and is over-excited, it is called a
synchronous condenser. When a synchronous motor is over-excited, it provides leading
current and works like a capacitor.
In a synchronous motor, a separate DC source is used to excite the field winding.
Therefore, the input supply only provides current to energize the stator, i.e., the current
provided is in-phase with the supply voltage. So the power factor remains unity.
The power factor can be adjusted by varying the DC excitation. By increasing the DC
excitation, the power factor varies from lagging to unity and leading power factor. When
the DC excitation increases, the field windings are over-magnetized.
The input supply provides a current component to the stator to compensate for this over-
magnetization. This current leads to the supply voltage, causing a leading power factor or
generating reactive power.
An inductive load consumes reactive power, causing a lagging power factor, while a
capacitive load generates reactive power, causing a leading power factor.
A synchronous motor can be used to improve the overall power factor of an electrical Synchronous Condenser
system by adjusting the DC excitation.
The synchronous motor used specifically for power factor improvement without any
mechanical load is called a synchronous condenser.
Advantages and Disadvantages
The synchronous condenser is used in parallel with the load to improve the power factor. Improving the power factor reduces
the extra current drawn from the source that is wasted in the power lines. Consequently, it helps in the reduction of electricity
bills and saves energy.When a synchronous condenser is connected across the supply voltage (in parallel), it draws leading
current and partially eliminates the reactive component. This way, the power factor is improved. Generally, synchronous
condensers are used to improve the power factor in large industries.
Advantages:
• Long lifespan (up to 25 years)
• High reliability
• Allows for stepless adjustment of power factor
• Does not generate harmonics or require maintenance for them
• Faults can be easily removed
• Is not affected by harmonics
• Requires low maintenance (only periodic bearing greasing is necessary)
Disadvantages:
• High cost (including high maintenance costs), therefore it is mostly used by large power users
• An auxiliary device is needed for operation as synchronous motors have no self-starting torque
Phase Advancer
The Phase Advancer is a simple AC exciter that connects to the main shaft of a motor and operates with the motor’s rotor
circuit to improve power factor.
It is commonly used in industries to improve the power factor of induction motors.
Since the stator windings of an induction motor take lagging current 90° out of phase with voltage, the power factor of the
motor is low.
By supplying exciting ampere-turns from an external AC source, the current does not affect the stator windings, and the
power factor of the induction motor improves. This process is done by the Phase Advancer.
Advantages:
Sufficiently reduces the lagging kVAR (reactive component of power or reactive power) drawn by the motor because
the exciting ampere turns are supplied at slip frequency (fs).
The Phase Advancer can be easily used where the use of synchronous motors is unacceptable.
Disadvantage:
Using a Phase Advancer is not economical for motors below 200 H.P. (about 150kW).
Static VAR
Compensator (SVC)
We have covered this topic in a separate article describing Static
VAR Compensator (SVC) including a circuit diagram, construction ,
working principles, and applications.
You can read the article to learn how SVCs are used for power
factor improvement.
The following power factor improvement in a three-phase system by
connecting a capacitor bank in:
Delta connection
Star Connection
Active cooling systems like fans, liquid cooling, or phase change materials are utilized to maintain temperatures within
acceptable ranges, especially for high-power applications.
Thermal Analysis and Modeling:
Conduct thermal simulations and modeling using specialized software to predict temperature distributions and
hotspots within the power electronics system, allowing for optimized component placement and design.
Material Selection:
Choose materials with good thermal conductivity and low thermal resistance to facilitate efficient heat transfer
throughout the system.
Optimized Packaging:
Design power electronics packaging to allow for efficient heat dissipation while maintaining structural integrity.
Enclosures and housings should be designed with heat dissipation in mind.
Efficient Layout and Placement:
Arrange components and layout PCBs in a manner that minimizes thermal gradients and ensures even distribution of
heat. Consider the proximity of high-heat components to aid in thermal balance.
Thermal Management in Power
Electronics
contd…
Thermal Monitoring and Control:
Implement temperature sensors strategically throughout the system to monitor component temperatures. Use this
data to adjust the system operation or activate cooling mechanisms as needed.
Thermal Budgeting:
Develop a thermal budget to ensure that each component stays within specified temperature limits, considering
factors such as ambient temperature and maximum allowable junction temperature.
Thermal Protection:
Implement thermal protection mechanisms that shut down the system or adjust performance when temperatures
exceed safe limits, preventing damage to components.
Thermal Testing and Validation:
Perform extensive testing under various load conditions and environmental temperatures to validate the thermal
design and ensure compliance with specifications.
Efficiency Improvement:
Effective thermal management contributes to improved efficiency by reducing losses associated with high
temperatures and improving overall system performance.
EMC Compliance
EMC stands for electromagnetic compatibility.
Every electronic device/machine on the market must be EMC compliant, meaning it must fulfill the EMC regulations and
standards defined by the country where the product is sold.
An EMC complaint product must
NOT interfere with other devices/machines in its environment (emission).
NOT being upset by other devices/machines in its environment (immunity).
NOT interfere with itself (signal integrity).
NOT be destroyed or malfunction when touched by a human (electrostatic discharge, ESD).
EMC (Electromagnetic Compatibility) compliance is a critical aspect of designing and manufacturing power electronics to
ensure that they operate without interfering with other electronic devices or being interfered with by external
electromagnetic sources.
EMC Compliance contd…