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Chapter 1 Semiconductor Diodes

The document provides an overview of semiconductor diodes, including their characteristics, operation under different biases, and the effects of temperature. It discusses the types of semiconductor materials, doping processes, and the behavior of p-n junctions, as well as the various types of diodes such as Zener and LEDs. Additionally, it covers diode testing methods, specifications, and equivalent circuits.

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63 views36 pages

Chapter 1 Semiconductor Diodes

The document provides an overview of semiconductor diodes, including their characteristics, operation under different biases, and the effects of temperature. It discusses the types of semiconductor materials, doping processes, and the behavior of p-n junctions, as well as the various types of diodes such as Zener and LEDs. Additionally, it covers diode testing methods, specifications, and equivalent circuits.

Uploaded by

Charity Corpuz
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Semiconductor Diodes

Objectives
• Understand key characteristics of Si, Ge, and GaAs.

• Learn conduction via electron and hole theory.

• Differentiate n-type and p-type materials.

• Explain diode operation (no-bias, forward-bias, reverse-bias).

• Calculate diode resistances (dc, ac, and average ac).

• Analyze ideal vs. practical equivalent circuits.

• Study Zener and LED operation and characteristics.


Diodes
• The diode is a 2-terminal device.

• A diode ideally conducts in only one direction.


Diodes Characteristics
• Conduction Region • Non-Conduction Region

The voltage across the diode is 0 V All of the voltage is across the diode
The current is infinite The current is 0 A
The forward resistance is defined as The reverse resistance is defined as
RF = VF / IF RR = VR / IR
The diode acts like a short The diode acts like open
Semiconductor Materials
Materials commonly used in the development of semiconductor devices:

• Silicon (Si)

• Germanium (Ge)

• Gallium Arsenide (GaAs)


Doping
The electrical characteristics of silicon and germanium are improved
by adding materials in a process called doping.

There are just two types of doped semiconductor materials:

n-type p-type
n-type materials contain p-type materials contain an
an excess of conduction excess of valence band holes.
band electrons.
p-n Junctions
One end of a silicon or germanium crystal can be doped as a
p-type material and the other end as an n-type material.

The result is a p-n junction


p-n Junctions
At the p-n junction, the excess conduction-band electrons on
the n-type side are attracted to the valence-band holes on
the p-type side.

The result is the formation of a


depletion region around the junction.
Diode Operating Conditions

A diode has three operating conditions:

No bias
Reverse bias
Forward bias
Diode Operating Conditions
No bias
No external voltage is applied: VD = 0 V

There is no diode current: ID = 0 A


Only a modest depletion region exists
Diode Operating Conditions
Reverse Bias
External voltage is applied across the p-n junction in the opposite
polarity of the p- and n-type materials.
Diode Operating Conditions
Reverse Bias
The reverse voltage causes the depletion region to widen.
The electrons in the n-type material are attracted toward the positive
terminal of the voltage source.

The holes in the p-type material are attracted toward the negative
terminal of the voltage source.
Diode Operating Conditions
Forward Bias
External voltage is applied across the p-n junction in the same polarity
as the p- and n-type materials.
Diode Operating Conditions
Forward Bias
The forward voltage causes the depletion region to narrow.

The electrons and holes are pushed toward the p-n junction.

The electrons and holes have sufficient energy to cross the p-n junction.
Actual Diode Characteristics
Majority and Minority Carriers

Two currents through a diode:

Majority Carriers Minority Carriers


The majority carriers in n-type The minority carriers in n-type
materials are electrons. materials are holes.

The majority carriers in p-type The minority carriers in p-type


materials are holes. materials are electrons.
Zener Region
The Zener region is in the diode’s reverse-bias region.
At some point the reverse bias voltage is so large the diode breaks
down and the reverse current increases dramatically.
The maximum reverse voltage that won’t take a diode into the Zener
region is called the peak inverse voltage or peak reverse voltage.
The voltage that causes a diode to enter the Zener region of operation
is called the Zener voltage (VZ).
Forward Bias Voltage
The point at which the diode changes from no-bias condition to
forward-bias condition occurs when the electrons and holes are given
sufficient energy to cross the p-n junction.
This energy comes from the external voltage applied across the diode.

The forward bias voltage required for a:


gallium arsenide diode  1.2 V
silicon diode  0.7 V
germanium diode  0.3 V
Temperature Effects

As temperature increases it adds energy to the diode.

It reduces the required forward bias voltage for forward-bias conduction.


It increases the amount of reverse current in the reverse-bias condition.
It increases maximum reverse bias avalanche voltage.

Germanium diodes are more sensitive to temperature variations


than silicon or gallium arsenide diodes.
Resistance Levels
Semiconductors react differently to DC and AC currents.

There are three types of resistance:

DC (static) resistance
AC (dynamic) resistance
Average AC resistance
DC (Static) Resistance
For a specific applied DC voltage (VD) the diode has a
specific current (ID) and a specific resistance (RD).

VD
RD 
ID
AC (Dynamic) Resistance
In the forward bias region:

The resistance depends on the amount of current (ID) in the diode.


The voltage across the diode is fairly constant (26 mV for 25C).
rB ranges from a typical 0.1  for high power devices to 2  for
low power, general purpose diodes. In some cases rB can be ignored.
In the reverse bias region:

The resistance is effectively infinite. The diode acts like an open.


Average AC Resistance
AC resistance can be calculated using the current
and voltage values for two points on the diode
characteristic curve.
Diode Equivalent Circuit
Diode Capacitance
When reverse biased, the depletion layer is very large. The diode’s
strong positive and negative polarities create capacitance (C T). The
amount of capacitance depends on the reverse voltage applied.
When forward biased, storage capacitance or diffusion capacitance
(CD) exists as the diode voltage increases.
Reverse Recovery Time (trr)
Reverse recovery time is the time required for a diode to
stop conducting when switched from forward bias to
reverse bias.
Diode Specification Sheets
Diode data sheets contain standard information, making cross-matching
of diodes for replacement or design easier.

1. Forward Voltage (VF) at a specified current and temperature


2. Maximum forward current (IF) at a specified temperature
3. Reverse saturation current (IR) at a specified voltage and temperature
4. Reverse voltage rating, PIV or PRV or V(BR), at a specified temperature
5. Maximum power dissipation at a specified temperature
6. Capacitance levels
7. Reverse recovery time, trr
8. Operating temperature range
Diode Symbol and Packaging

The anode is abbreviated A


The cathode is abbreviated K
Diode Testing
Diodes are commonly tested using one of these types of
equipment:

Diode checker
Ohmmeter
Curve tracer
Diode Checker
Many digital multimeters have a diode checking function.
The diode should be tested out of circuit.

A normal diode exhibits its forward voltage:

Gallium arsenide  1.2 V


Silicon diode  0.7 V
Germanium diode  0.3 V
Ohmmeter
An ohmmeter set on a low Ohms scale can be used to test
a diode.
The diode should be tested out of circuit.
Curve Tracer
A curve tracer displays the characteristic curve of a diode
in the test circuit. This curve can be compared to the
specifications of the diode from a data sheet.
Other Types of Diodes

There are several types of diodes besides the standard


p-n junction diode. Three of the more common are:

Zener diodes
Light-emitting diodes
Diode arrays
Zener Diode
A Zener diode is one that is designed to safely operate
in its Zener region; i.e., biased at the Zener voltage (VZ).

Common Zener diode voltage ratings are between


1.8 V and 200 V
Light-Emitting Diode (LED)
An LED emits light when it is forward biased,
which can be in the infrared or visible spectrum.

The forward bias voltage is usually


in the range of 2 V to 3 V.
Diode Arrays
Multiple diodes can be packaged together in an
integrated circuit (IC).

Common Anode

Common Cathode

A variety of diode configurations are available.

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