ELECTRONIC DEVICES

M.Sc. PHYSICS (I Semester)

Dr. Sanjeev Kumar Sharma

M.Sc. (Physics, CCSU), Ph. D (Electronics, DU), Postdoc-S. Korea (thin
film), Assistant/Associate: South Korea – 12 years)
yllabus: Electronic Devices
Unit 1: Conduction Mechanism in Semiconductors
 Classification of semiconductors - Elemental and compound
semiconductors,
 Direct band and indirect band gap semiconductors,
 Charge carriers in extrinsic semiconductors, Carrier concentrations;
 The Fermi Level, electron and hole concentrations at equilibrium,
temperature dependence of carrier concentrations, drift of carriers in
electric and magnetic fields;
 Conductivity and mobility, drift and resistance, effect of temperature and
doping on mobility,
 The Hall effect, Diffusion of carriers in semiconductors; diffusion processes,
diffusion and drift of carriers, diffusion and recombination, The continuity
equation.
oduction: Dr. Sanjeev Kumar Sharma
Ph. D : Department of Electronics, University of Delhi, India, 2005
Post-doc: Brain Korea 21st Century, Chonnam National Univ., South Korea, 2006-2008
Res. Prof.: Dept. of Electronics, Dongguk University, Seoul, South Korea, 2008-2010
Asst. Prof.: Dept. Inform. Commun., Cheu Halla Univ., Jeju, South Korea, 2010-2012
Asst./Asso. Prof.: Semiconductor Science, Dongguk Univ., South Korea, 2012-2018
Asso. Prof.: Department of Physics, CCSU, Meerut, India, 2018-till date
Awards: Best Professor Award: Research – Nanotechnology, 2012.03.31, Korea.
Best research paper: $1,000 + Trophy (2012) by Cheju Halla Univ., Jeju, Korea.
Best research performance: $1,500 (2014) by Dongguk University-Seoul, Korea.
Best research performance: $3,000 (2016) by Dongguk University-Seoul, Korea.
Patents: 4 granted, 2 filed.
“Method for Al-nanorods thin film anode of Li-ion batteries”, Patent No.: 1012863660000, 2013.07.09.
“Method for manufacturing of biological silica (b-SiO2) From Rice Husk Crude Biomass”,
Patent No.: 10-2020-0056950, 2020.05.13.
“YZO-CNTs nanocomposites with enhanced photocatalyst performance and their manufacturing methods”,
Patent No.: 10-2020-0118746, 2020.09.16.
Ph. D Students: 12 (4 - South Korea)
Reviewer: International Journals, SCI/SCIE: 55
Springer, Springer-Nature, Elsevier, Wiley, AIP, IOP, ACS, RSC, MDPI, ECS,
Hindwai, Taylor & Francis, World Scientific, Hanser, CSIR-NISCAIR, DE
Gruyter, Wiley-VCH.

Publication: 122 Research articles and Proceeding

Materials Today, Solid State Sciences, Sensors, Applied Physics Letters, E.
Acta, Materials Science and Engineering, European Ceramic Society, Solid
State Electronics, Electronic Materials, Optik, etc.

Research Fields for Devices: Semiconductor Materials and Devices

Thin films, Diodes, LEDs, Patch Antenna, Gunn Diode, Bistable Memory,
Nanogenerators, Bio-/Chemo-Sensors, Photocatalysts, TGOs, Antibacterial
analysis, Nanomaterials 0D/1D/2D/3D (Nanoparticles, Nanoflowers,
Nanodumbells, Quantum Dots, Nanowires, Nanorods, Nanobolts,
Nanosponges, Nanospheres).
Classification of Semiconductors
Semiconductors are materials whose electrical properties lie
between Conductors and Insulators.
Ex : Silicon (Si) and Germanium (Ge)

Elemental Semiconductors Compound Semiconductors

Si, Ge, GaAs, GaN, InP.

Silicon (Si)
Silicon has the diamond structure. There are 14 electrons
per primitive cell. Gap is only 1.12 eV, however.

Now there is a small (but finite) chance for a few electrons to be thermally
excited from valence band to conduction band.
Diamond
In the diamond structure, the carbon atoms are
arranged on an fcc-type lattice with a total of 16
electrons per primitive cell.

The valence band and 7 lower bands are full, leaving no electrons in the
conduction band.
Electrons may be thermally activated to
jump a gap. At room temperature, kBT is
only 0.026 eV. To jump the energy gap, the
electron requires very high temperatures.
So, diamond is an excellent insulator.

Material Resistivity (ρ)

Si
Diamond 1018 -m
Graphite 9 -m
ulators, Conductors, Semiconductors
rom energy band structures
E E E

conduction band conduction

empty band
-
Band partially-filled
gap Band electron
Forbidden band
gap Eg < 5eV hole
region Eg > 5eV
+
valence
valence band band
filled

Insulator Semiconductor Conductor

Si: Eg = 1.1 eV
SiO2: Eg = 9 eV
Ge: Eg = 0.75 eV
GaAs: Eg = 1.42 eV
hat are P-type and N-type?
 Semiconductors are classified in to P-type and N-
type semiconductor.

 P-type: A P-type material is one in which holes are majority

carriers i.e. they are positively charged materials (++++).

 N-type: A N-type material is one in which electrons are majority

charge carriers i.e. they are negatively charged materials (-----).
xtrinsic Semiconductors
Diodes
Electronic devices created by bringing together a p-type and n-type region
within the same semiconductor lattice. Used for rectifiers, LED etc.

It is represented by the following symbol, where the arrow indicates the

direction of positive current flow.
haracteristics of Diode
Diode always conducts in one direction.
Diodes always conduct current when “Forward Biased” (Zero
resistance).
Diodes do not conduct when “Reverse Biased”(Infinite resistance).
Characteristics of Practical Diode

 I-V (current-Voltage) characteristic for a typical small signal silicon diode at a

temperature of 300 K.
 Notice the change of scale for negative current and voltage.
Mass Action Law
 Valid for both intrinsic and extrinsic semiconductors.

 It is important in devices to control n and p concentrations and to

suppress the influence of the intrinsic concentration.

 These equations are important in establishing upper limits in

semiconductor operating temperature.

 We generally require ni << (minimum doping density) and, practically,

this means we need doping concentrations above 10 14 cm3.
ht Emission in Semiconductors
E

conduction electron
band
-
h
Band
gap Electron-hole
recombination
+
valence
band hole

Si: Eg = 1.1 eV,  = 1100 nm

GaAs: Eg = 1.4 eV,  = 873 nm
AlAs: Eg = 2.23 eV,  = 556 nm

Si: indirect bandgap, ineffective

GaAs: direct bandgap, effective
sic Semiconductor Devices
E C
p n p n p

B
Diode Bipolar transistor

Metal-semiconductor
contacts
G
G SiO2
p +
S D
S D n+ n+
n

p+ p Inversion
Depletion region
region
G
Junction field-effect transistor Metal-oxide-semiconductor FET
(JFET) (MOSFET)
Thanks