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The patent document discloses an exposure apparatus that prevents damage from liquid leaking between stages. The exposure apparatus includes two stages movable under a projection optical system, a liquid immersion system to form a liquid region between the stages, and a controller to move the liquid region between the upper surfaces of the stages. The apparatus also includes a detecting device to detect liquid leakage when moving the liquid region between the stages in order to take action to prevent damage from any leaked liquid spreading and maintain exposure and measurement accuracy.

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0% found this document useful (0 votes)
58 views21 pages

Us8456609 PDF

The patent document discloses an exposure apparatus that prevents damage from liquid leaking between stages. The exposure apparatus includes two stages movable under a projection optical system, a liquid immersion system to form a liquid region between the stages, and a controller to move the liquid region between the upper surfaces of the stages. The apparatus also includes a detecting device to detect liquid leakage when moving the liquid region between the stages in order to take action to prevent damage from any leaked liquid spreading and maintain exposure and measurement accuracy.

Uploaded by

pmurph
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 21

US008456609B2

(12) United States Patent


Shibuta
(54)

US 8,456,609 B2

(10) Patent N0.:


(45) Date of Patent:

EXPOSURE APPARATUS AND DEVICE

5,610,683
5,715,039
5,825,043
5,969,441

MANUFACTURING METHOD

A
A
A
A

3/1997
2/1998
10/1998
10/1999

Jun. 4, 2013
Takahashi
Fukuda et :11.
SuWa
Loopstra et a1.

(75) Inventor: Makoto Shibuta, Kumagaya (JP)

6,208,407 B1

3/2001 Loopstra

(73) Assignee: Nikon Corporation, Tokyo (JP)

6,262,796 B1
6,341,007 B1

7/2001 Loopstra et a1.


1/2002 Nishi et 31.

6,665,054 B2 *

(*)

Notice:

Subject to any disclaimer, the term of this


patent is extended or adjusted under 35

(22) Filed:

Inoue ............................ .. 355/77

(Continued)
FOREIGN PATENT DOCUMENTS

U.S.C. 154(b) by 949 days.


DE
DE

(21) App1.No.: 12/2s9,321

12/2003

221 563 A1
224 448 A1

4/1985
7/1985

(Continued)

Oct. 24, 2008

OTHER PUBLICATIONS

(65)

Prior Publication Data


US 2009/0066923 A1

May 14, 2008 Of?ce Action issued in US. Appl. No. 11/665,273.

Mar. 12, 2009

(Continued)
Related US. Application Data

(62)

Division of application No. 11/665,273, ?led as


application No. PCT/JP2005/018803 on Oct. 12,

Primary Examiner * Hung Henry Nguyen


(74) Attorney, Agent, or Firm * Oliff& Berridge, PLC

2005, noW Pat. No. 7,456,929.

(57)

(30)

Foreign Application Priority Data

Oct. 15, 2004

(51) Int. Cl.


G03B 27/42
G03B 27/52
(52) US. Cl.
USPC

(58)

(JP) ............................... .. 2004-301639

(2006.01)
(2006.01)

............................................. .. 355/53; 355/30

Field of Classi?cation Search


USPC ........................................ .. 355/30, 53, 72476

See application ?le for complete search history.


(56)

References Cited
U.S. PATENT DOCUMENTS
4,346,164 A
4,480,910 A

8/1982 Tabarelli et a1.


11/1984 Takanashiet a1.

ABSTRACT

An exposure apparatus Which prevents damages due to leaked


out liquid from expanding and can maintain exposure accu

racy and measuring accuracy. The exposure apparatus


includes a ?rst stage Which is movable relative to the projec
tion optical system, a second stage Which is movable relative
to the projection optical system, and a liquid immersion sys
tem that is capable of forming a liquid immersion region of a
liquid under the projection optical system. The ?rst and sec
ond stages are moved in a state in Which a ?rst overhang

portion provided at the ?rst stage and a second overhang


portion provided at the second stage are brought close to or in
contact With each other, such that the liquid immersion region
is moved from one of upper surfaces of the ?rst and second

overhang portions to the other of the upper surfaces of the ?rst

and second overhang portions.


39 Claims, 8 Drawing Sheets

US 8,456,609 B2
Page 2
US. PATENT DOCUMENTS

JP

A 10-214783

8/1998

1533;

6,778,777 B7

877004 Bieekeretai.

5;

313333;};

6,897,963 B1

5/2005 Taniguchi et al.

JP

A 1146816

V1999

7,199,858 B2 *

4/2007 Lofet al. ...................... .. 355/30

JP

A 11476727

7/l999

1/2008 Ebihara
7/2004 Lof et al.
8/2004 Lof et al.

JP
JP
JP

A2000_58436
A 2000_505958
A 2001_267239

2/2000
5/2000
9/2001

A_2004_207711
A2005_236087
A_2()()5_2597g9
A 2005-259789
A 2005-268700
A-2005-268700
A 2005-268742
WO 99/49504
W0 01/035168
WO 2004/019128
WO 2004/055803
WO 2004/090577
WO 2004/114380
WO 2005/010962
WO 2005/074014
WO 2005/076321
WO 2005/124835

7/2004
9/2005
9/2005
9/2005
9/2005
9/2005
9/2005
9/1999
5/2001
3/2004
7/2004
10/2004
12/2004
2/2005
8/2005
8/2005
12/2005

7,321,419 B2
2004/0136494 A1
2004/0160582 A1
2004/0263809
2005/0094125
2006/0007419
2006/0082741
2006/0132737
2006/0132740
2006/0227308
2008/0043210

A1
A1
A1
A1
A1
A1
A1
A1

12/2004
5/2005
1/2006
4/2006
6/2006
6/2006
10/2006
2/2008

Nakano
Arai
Stree?<erk et a1.
Van Der Toorn et a1.
Magome et al.
Ebihara
Brink et a1.
Shibuta

FOREIGN PATENT DOCUMENTS


EP
EP
EP
EP
EP
JP
JP
JP
JP
JP

1 528 431
1 571 698
1 653 501
1713 113
1713 114
A'57'117238
A 57-117238
A 58-202448
A 59-019912
A 62-65326

JP
JP

A63-157419
A 4'65603

JP

A-04-065603

A2
A1
A1
A1
A1

5/2005
9/2005
5/2006
10/2006
10/2006
7/ 1982
7/1982
11/1983
2/1984

3/1987
6/1988

JP
Jp
JP
JP
JP
JP
JP
W0
W0
W0
W0
W0
W0
W0
W0
W0
W0

A2
A2
A1
A1
A1
A1
A1

OTHER PUBLICATIONS

Jul. 25, 2008 Notice of Allowance issued in US. Appl. No.


11565173

3/1992

Aug. 17, 2009 Search Report issued in European Patent Application

3/1992

NO 057931420

JP

A 4605915

10/1992

JP

A 4-305917

10/1992

H1993

cation No. 200702792-3.

JP
JP

A 5628
A 6 {24873

3/l993
5/l994

Dec. 17, 2010 Search and Examination Report issued in Singapore


Patent Application No. 200906802-4.

JP

A 7-176468

7/1995

JP

A 7_220990

8/l995

Application PCT/JP2005/018803 With Translation.

Jan. 17, 2006 Written Opinion issued in PCT Patent Application

JP

A 5 21314
-

May 21, 2008 Examination Report issued in Singapore Patent Appli


-

Jan. 17, 2006 International Search Report issued in PCT Patent

JP

A 837149

2/l996

Jp
JP
JP

A_0g_316125
A 8-316125
A 10-163099

11/1996
11/1996
6/1998

PCT/JP2005/018803 With Translation.

* cited by examiner

US. Patent

Jun. 4, 2013

Sheet 2 of8

FIG. 2
Q

82

90 91

92 93
83

84

95 93
85

US 8,456,609 B2

US. Patent

FIG. 3A

FIG. 3B

Jun. 4, 2013

Sheet 3 of8

US 8,456,609 B2

US. Patent

Jun. 4, 2013

F B 4A

w\

Sheet 4 of8

w? 04%

83

US 8,456,609 B2

US. Patent

.UEm

Jun. 4, 2013

Sheet 5 of8

US 8,456,609 B2

US. Patent

Jun. 4, 2013

Sheet 6 0f8

US 8,456,609 B2

FIG. 6

PL (LS1)

US. Patent

Jun. 4, 2013

E8

/
V

Sheet 7 of8

US 8,456,609 B2

mwjoEz

58

US. Patent

Jun. 4, 2013

Sheet 8 of8

US 8,456,609 B2

FIG. 8

201
DESIGN
(FUNCTION, PERFORMANCE, PATTERN)

2202

l
MANUFACTURE MASK

2204 i 4
PROCESS SUBSTRATE

2205 l
2206 l

ASSEMBLE DEVICE

INSPECT DEVICE

I
(SHIPMENT)

.203

MANUFACTURE SUBSTRATE

US 8,456,609 B2
1

EXPOSURE APPARATUS AND DEVICE


MANUFACTURING METHOD

ing the position directly beneath the projection optical system


With the ?rst stage and the second stage being close to or in
contact With each other, a liquid immersion mechanism that
forms a liquid immersion region of a liquid on the upper
surface of at least one of the stages of the ?rst stage and the
second stage, a controller that by moving the ?rst stage and

This is a Division ofapplication Ser. No. 11/655,273, now

US. Pat. No. 7,456,929, Which is the US. National Stage of


PCT/JP2005/018803 ?led Oct. 12, 2005. The disclosure of

each of the prior applications is hereby incorporated by ref

the second stage together, moves the liquid immersion region

erence herein in its entirety.


The present invention relates to an exposure apparatus that

betWeen the upper surface of the ?rst stage and the upper

surface of the second stage With the liquid being retained


betWeen the projection optical system and the upper surface

exposes a substrate via an optical system and to a device

manufacturing method.
The present application claims priority to Japanese Patent

of at least one of the stages, and a detecting device that detects

the liquid having leaked from betWeen the ?rst stage and the
second stage When moving the liquid immersion region from

Application No. 2004-301639, ?led on Oct. 15, 2004, and its


content is incorporated herein by reference.

the upper surface of one of the stages of the ?rst stage and the
second stage to the upper surface of the other stage.

BACKGROUND

In the photolithography process, Which is one of the pro


cesses for manufacturing micro-devices such as semiconduc
tor devices or liquid crystal display devices, an exposure

20

moved betWeen the upper surface of the ?rst stage and the
upper surface of the second stage, and thus When the detecting
device has detected the liquid, an appropriate action to pre

apparatus that projects a pattern formed on a mask onto a

photosensitive substrate is used. Such an exposure apparatus


has a mask stage that supports a mask and a substrate stage

that supports a substrate and, While successively moving the


mask stage and the substrate stage, projects an image of the
pattern of the mask onto the substrate via a projection optical
system. By the Way, some of such exposure apparatuses

In accordance With the ?rst aspect of the present invention,


there is provided the detecting device that detects the liquid
having leaked from betWeen the ?rst stage and the second
stage When the liquid immersion region of the liquid has been

25

vent the damage due to the liquid having leaked from spread
ing can be promptly taken. Thus, the good exposure accuracy
and the good measurement accuracy can be maintained.
In accordance With a second aspect of the present inven

include tWo stages that are movable independently of each

tion, there is provided a device manufacturing method that

other on the image plane side of the projection optical system.


Further, in manufacturing micro-devices, miniaturization of

uses an exposure apparatus (EX) of the above-described


mode.

30

the pattern formed on a substrate is required in order to make

In accordance With the second aspect of the present inven


tion, since the expo sure process and the measurement process

such micro-devices high-density ones. To address this


requirement, it is desired that the exposure apparatus have a

can be performed Well, devices having a desired performance

still higher resolution. As a means for realiZing such a still

higher resolution, such a liquid immersion exposure appara


tus as disclosed in the patent document 1, beloW, in Which the
space betWeen the projection optical system and the substrate
is ?lled With a liquid to form a liquid immersion region, and

can be manufactured.
35

In accordance With the present invention, since the damage


due to the liquid having leaked out can be prevented from
spreading, the expo sure accuracy and the measurement accu
racy can be maintained.

an exposure process on the substrate is performed via the

liquid of the liquid immersion region.

40

BRIEF DESCRIPTION OF THE DRAWINGS

45

ratus in accordance With a ?rst embodiment.


FIG. 2 is a plan vieW of a substrate stage and a measure
ment stage, as vieWed from above.

Patent Document 1: International Publication WO 99/49504

pamphlet.

FIG. 1 is a schematic diagram shoWing an exposure appa


SUMMARY

When the liquid leaks out, the environment (humidity etc.)


in Which the exposure apparatus is placed changes due to the
liquid having leaked out, and thus there occurs a possibility
that the expo sure accuracy and the measurement accuracy are

adversely affected. Further, if the liquid having leaked out is

50

left as it is, various devices constituting the exposure appara


tus may, for example, break doWn or rust, spreading the

damage.
The present invention has been made in consideration of
such situations, and its object is to provide an exposure appa

of the
of the
of the

FIG. 5 is a draWing for illustrating a condition in Which a

detecting device is detecting a liquid.

60

FIG. 6 is an enlarged vieW of a main portion of an exposure


apparatus in accordance With a second embodiment.
FIG. 7 is a schematic diagram shoWing an exposure appa
ratus in accordance With a third embodiment.
FIG. 8 is a ?owchart shoWing an example of a micro-device

leaked out from spreading and by Which the exposure accu


racy and the measurement accuracy can be maintained and to

there is provided an exposure apparatus that exposes a sub

manufacturing process.

strate via a projection optical system, comprising: a ?rst stage


and a second stage that are movable, on the image plane side

of the projection optical system, independently of each other


in a tWo-dimensional plane substantially parallel to the image

of the

55

ratus Which prevents the damage due to the liquid having


provide a device manufacturing method.
In accordance With a ?rst aspect of the present invention,

FIG. 3A is a draWing for illustrating the operations


substrate stage and the measurement stage.
FIG. 3B is a draWing for illustrating the operations
substrate stage and the measurement stage.
FIG. 4A is a draWing for illustrating the operations
substrate stage and the measurement stage.
FIG. 4B is a draWing for illustrating the operations
substrate stage and the measurement stage.

DETAILED DESCRIPTION

plane, a driving mechanism that moves the ?rst stage and the

In the folloWing, although embodiments of the present


invention Will be described referring to the draWings, the

second stage together Within a predetermined region includ

present invention is not limited to those embodiments.

65

US 8,456,609 B2
3

First Embodiment
FIG. 1 is a schematic diagram showing an exposure appa
ratus in accordance With a ?rst embodiment. In FIG. 1, expo
sure apparatus EX includes mask stage MST that is movable
While holding mask M, With substrate stage ST1 that is mov

While synchronously moving mask M and substrate P in their


respective scanning directions direction different from each
other (diverse directions), the pattern formed on mask M is
exposed onto substrate P is used. In the folloWing description,
it is assumed that the synchronous movement direction (scan
ning direction), in a horiZontal plane, of mask M and substrate

able While holding substrate P, With measurement stage ST2


that is movable While measuring devices related to the expo
sure process being mounted thereon, With illumination opti
cal system IL that illuminates mask M held by mask stage

P is referred to as the X-axis direction, that the direction, in

the horiZontal plane, perpendicular to the X-axis direction is


referred to as the Y-axis direction (non-scanning direction),
and that the direction that is perpendicular to the X-axis
direction and the Y-axis direction and coincides With optical
axis AX of projection optical system PL is referred to as the
Z-axis direction. Further, it is assumed that the direction
around the X-axis, the direction around the Y-axis, and the

MST With exposure light EL, With projection optical system


PL that projects a pattern image of mask M illuminated With
exposure light EL onto substrate P held by substrate stage
ST1, and With controller CONT that controls the overall
operation of exposure apparatus EX. Substrate stage ST1 and
measurement stage ST2 are each movably supported on base
member BP and are movable independently of each other. On
undersurface U1 of substrate stage ST1 are provided gas
bearings 41 for supporting substrate stage ST1 in a non

direction around the Z-axis are respectively referred to as the

GX-direction, the GY-direction, and the GZ-direction. It


should be noted that a substrate referred to herein compre
hends a base material, e.g., a semiconductor Wafer, over

Which a photosensitive material (resist) is applied, and a

contact manner relative to upper surface BT of base member

BP. Similarly, also on undersurface U2 of measurement stage


ST2 are provided gas bearings 42 for supporting measure

20

mask comprehends a reticle on Which a device pattern to be

reduction-projected onto the substrate is formed.

ment stage ST2 in a non-contact manner relative to upper

By operating driving mechanism SD that includes linear

surface BT of base member BP. Substrate stage ST1 and

motors etc., substrate stage ST1 and measurement stage ST2

are movable, respectively. By controlling driving mechanism

measurement stage ST2 are movable respectively on the

image plane side of the projection optical system PL, inde

25

SD, controller CONT can move substrate stage ST1 and

pendently of each other in a tWo-dimensional plane (in the

measurement stage ST2 together, in the XY-plane, Within a

XY-plane) substantially parallel to the image plane.

predetermined region including the position directly beneath

Exposure apparatus EX of this embodiment is a liquid


immersion exposure apparatus to Which a liquid immersion

projection optical system PL in a state that substrate stage

method is applied, With the exposure Wavelength being short

ST1 and measurement stage ST2 are close to or in contact


30

With each other. By moving substrate stage ST1 and measure


ment stage ST2 together, controller CONT can move liquid
immersion region LR betWeen upper surface P1 of substrate
stage ST1 and upper surface E2 of measurement stage ST2 in
a state that liquid LQ is retained betWeen projection optical

35

system PL and at least one of upper surface E1 of substrate


stage ST1 and upper surface E2 of measurement stage ST2.
In the embodiment, on the upper portion of the side face of

ened in effect, to improve the resolution and, at the same time,

to Widen the depth of focus. Further, exposure apparatus EX


includes liquid immersion mechanism 1 for forming liquid
LQs liquid immersion region LR on the image plane side of

projection optical system PL. Liquid immersion mechanism


1 includes noZZle member 70 that is provided on the image

plane side vicinity of projection optical system PL and has


supply ports 12 for supplying liquid LQ and recovery ports 22
for recovering liquid LQ, With liquid supply mechanism 10
that supplies liquid LQ to the image plane side of projection
optical system PL via supply ports 12 provided to noZZle

40

portion H1 is also a portion of upper surface E1 of substrate


stage ST1. Similarly, on the upper portion of the side face of

member 70, and With liquid recovery mechanism 20 that


recovers liquid LQ on the image plane side of projection
optical system PL via recovery ports 22 provided to noZZle
member 70. NoZZle member 70 is formed in a ring-shaped
manner so as to surround the end portion of projection optical

measurement stage ST2 is provided overhang portion H2 that


protrudes outWardly from the center portion of upper surface
45

E2 of measurement stage ST2. The upper surface of overhang


portion H2 is also a portion of upper surface E2 of measure

ment stage ST2. When, for example, liquid immersion region

system PL on the image plane side. At least While transferring


the pattern image of mask M onto substrate P, exposure appa

ratus EX locally forms, by liquid LQ having been supplied


from liquid supply mechanism 10, liquid LQs liquid immer

substrate stage ST1 is provided overhang portion H1 that


protrudes outWardly from the center portion of upper surface
E1 of substrate stage ST1. The upper surface of overhang

50

LR being moved from one of the stages to the other stage, the
+Y side region of upper surface E1 of substrate stage ST1 and
the Y side region of upper surface E2 of measurement stage

sion region LR that is larger than projection area AR of


projection optical system PL and is smaller than substrate P

ST2 come close to or into contact With each other.

on a portion of substrate P that includes projection area AR.

stage ST2 are close to each other means a state in Which,

More speci?cally, exposure apparatus EX adopts a local liq


uid immersion system in Which the optical path space
betWeen ?rst optical element LS1 located closest to the image
plane of projection optical system PL and a portion of the
surface of substrate P placed on the image plane side of

Here, the state that substrate stage ST1 and measurement

55

moved, substrate stage ST1 and measurement stage ST2 are


close to each other to such a degree that liquid LQ does not
leak out from betWeen substrate stage ST1 and measurement
stage ST2. The alloWable value of the space betWeen both

projection optical system PL is ?lled With liquid LQ and by

irradiating, via liquid LQ betWeen projection optical system

60

PL and substrate P and via projection optical system PL,


exposure light EL having passed through mask M onto sub
strate P, projects the pattern of mask M onto substrate P to
expose substrate P.
The embodiment Will be described by assuming, as an
example, a case Where as exposure apparatus EX, a scan type

exposure apparatus (the so-called scanning stepper) in Which

When liquid LQ betWeen upper surface E1 of substrate stage


ST1 and upper surface E2 of measurement stage ST2 being

stages ST1 and ST2 depends upon, e.g., the materials, surface
treatments of both stages, the kind of liquid LQ or the like.

Further, exposure apparatus EX includes detecting device


60 that detects liquid LQ having leaked from betWeen sub
65

strate stage ST1 and measurement stage ST2 When liquid


immersion region LR from upper surface F1 (E2) of one of the
stages of substrate stage ST1 and measurement stage ST2 to
upper surface F2 (E1) of the other stage being moved. As

US 8,456,609 B2
5

described above, substrate stage ST1 and measurement stage


ST2 are controlled such that their relative positional relation
ship is maintained so as to prevent liquid LQ from leaking,

excimer laser light (Wavelength of 248 nm), or a vacuum


ultraviolet light (VUV light) such as an ArF excimer laser

light (Wavelength of 193 nm) or an F2 excimer laser light


(Wavelength of 157 nm) may be used. In the embodiment, an
ArF excimer laser light is used.

and they are moved together in a state that they are close to or

in contact With each other. HoWever, even if liquid LQ has

leaked out, detecting device 60 is capable of detecting the

In the embodiment, puri?ed or pure Water is used as liquid


LQ. Puri?ed Water can transmit not only anArF excimer laser

liquid LQ having leaked.


Detecting device 60 includes light projecting portion 61
that emits detecting light La and With light receiving portion

light hoWever also, for example, a bright line (g-line, h-line,

62 that is disposed in a predetermined position relative to

light (DUV light) such as a KrF excimer laser light (Wave

detecting light La. Light projecting portion 61 is provided on

length of 248 nm).

second side surface T2 of measurement stage ST2. On the

Mask stage MST is movable While holding mask M. Mask


stage MST holds mask M by means of vacuum suction (or

or i-line) emitted from a mercury lamp and a deep ultraviolet

other hand, light receiving portion 62 is provided on ?rst side


surface T1 of substrate stage ST1. First side surface T1 of
substrate stage ST1 constitutes a region under overhang por
tion H1 and is a surface facing toWard the +Y side. Further,
second side surface T2 of measurement stage ST2 constitutes
a region under overhang portion H2 and is a surface facing
toWard the Y side. Thus, ?rst side surface T1 of substrate
stage ST1 and second side surface T2 of measurement stage
ST2 face each other. Further, also on side face 42T of gas
bearing 42, Which supports measurement stage ST2 in a non
contact manner relative to base member BP, is provided light

projecting portion 63 that emits detecting light Lb. On side


face 41T of gas bearing 41, Which supports substrate stage

electrostatic suction). By operating driving mechanism MD


Which includes a linear motor etc. and is controlled by con

troller CONT, mask stage MST, in the state of holding mask


M, is tWo-dimensionally movable in a plane perpendicular to

optical axis AX of projection optical system PL, i.e., in the


20

25

ST1 in a non-contact manner relative to base member BP, is

XY-plane, and is ?nely rotatable in the GZ-direction. On mask


stage MST is set moving mirror 31. Further, laser interferom
eter 32 is positioned at a position facing moving mirror 31.
The tWo-dimensional position and the rotation angle in the
GZ-direction (including the rotation angles in the 6X- and
GY-directions in some cases) of mask M on mask stage MST
are measured by laser interferometer 32 in real time. The
measurement results from laser interferometer 32 are output

provided light receiving portion 64 that corresponds to light

ted to controller CONT. By operating driving mechanism MD

projecting portion 63. Side face 41T of gas bearing 41 is a


surface facing toWard the +Y side; side face 42T of gas
bearing 42 is a surface facing toWard the Y side; side face

based on the measurement results from laser interferometer


30

41T ofgas bearing 41 and side face 42T ofgas bearing 42 face
each other.
Substrate stage ST1 and measurement stage ST2 include

overhang portion H1 and overhang portion H2, respectively.


Thus, even When upper surface E1 of substrate stage ST1 and

35

upper surface E2 of measurement stage ST2 are made close to


or in contact With each other, second side surface T2, on

Which light projecting portion 61 is provided, and ?rst side


surface T1, on Which light receiving portion 62 is provided,
are mutually separated by a predetermined distance, and, at

system PL may also be either a unit magni?cation system or

a magnifying system. Among plurality of optical elements


40

ing portion 64 is provided, are mutually separated by a pre

substrate P; substrate stage ST1 can move substrate holder PH


45

space is formed under the portion Where upper surface F1 and


upper surface F2 are close to (or in contact With) each other.
It should be noted that it may, of course, be con?gured such

substrate P is disposed in depression portion 36. Further,


50

Illumination optical system IL includes an exposure light


source, an optical integrator for uniforming the illuminance
of the light ?ux emitted from the exposure light source, a
condenser lens for condensing exposure light EL from the
optical integrator, a relay lens system, a ?eld stop for setting

height substantially equal to that of (constitutes the same


plane as) the surface of substrate P held by substrate holder
PH.
55

holder PH, is tWo-dimensionally movable in the XY-plane

substantially parallel to the image plane of proj ection optical


60

system PL and is ?nely rotatable in the OZ-direction, on the

image plane side of projection optical system PL. Further,

by illumination optical system IL, With exposure light EL


having a uniform illuminance distribution. As exposure light

a bright line (g-line, h-line, i-line) emitted from a mercury


lamp, a deep ultraviolet light (DUV light) such as a KrF

By operating driving mechanism SD Which includes linear


motors etc. and is controlled by controller CONT, substrate
stage ST1, in the state of holding substrate P via substrate

an illumination area formed by exposure light EL on mask M,


etc. A speci?ed illumination area on mask M is illuminated,

EL emitted from illumination optical system IL, for example,

substrate stage ST1s upper surface F1 around depression


portion 36 is made a ?at surface (?at portion) so that it has a

ment stage ST2. Similarly, of course, it may also be con?g


ured such that light projecting portion 63 is provided on gas

bearing 41, and light receiving portion 64 is provided on gas


bearing 42.

in the image plane side of projection optical system PL.


Substrate holder PH holds substrate P by means of, e.g.,
vacuum suction. On substrate stage ST1 is provided depres
sion or recess portion 36, and substrate holder PH for holding

stage ST2 are made close to or in contact With each other, a

that light projecting portion 61 is provided on substrate stage


ST1, and light receiving portion 62 is provided on measure

constituting projection optical system PL, ?rst optical ele


ment LS1 located closest to the image plane of projection
optical system PL protrudes from lens barrel PK.
Substrate stage ST1 has substrate holder PH Which holds

the same time, side face 42T, on Which light projecting por
tion 63 is provided, and side face 41T, on Which light receiv
determined distance. In other Words, When upper surface E1
of substrate stage ST1 and upper surface E2 of measurement

32, controller CONT performs the position control of mask M


held by mask stage MST.
Projection optical system PL is for projecting the pattern
image of mask M onto substrate P at a predetermined projec
tion magni?cation of [3 and is constituted by a plurality of
optical elements; these optical elements are held by lens
barrel PK. In the embodiment, projection optical system PL is
a reduction system of Which projection magni?cation [3 is,
e.g., 1A, 1/s, or 1/8. It should be noted that projection optical

65

substrate stage ST1 is also movable in the Z-axis-direction, in


the GX-direction, and in the GY-direction. Thus, the upper
surface of substrate P supported by substrate stage ST1 is
movable in the six-degree-of-freedom directions, i.e., in the
X-axis-direction, in the Y-axis-direction, in the Z-axis-direc
tion, in the GX-direction, in the GY-direction, and in the 6Z

US 8,456,609 B2
7

direction. On the side face of substrate stage ST1 is provided


moving mirror 33. Further, laser interferometer 34 is posi
tioned at a position facing moving mirror 33. The tWo-dimen
sional position and the rotation angle of substrate P on sub
strate stage ST1 are measured by laser interferometer 34 in
real time. In addition, exposure apparatus EX includes such

Further, measurement stage ST2 is also movable in the


Z-axis-direction, in the GX-direction, and in the GY-direction.
In other Words, as With substrate stage ST1, measurement
stage ST2 is also movable in the six-degree-of-freedom direc

tions, i.e., in the X-axis-direction, in the Y-axis-direction, in


the Z-axis-direction, in the GX-direction, in the GY-direction,

an oblique-incidence type focus-leveling detection system


(not shoWn) as disclosed in, e.g., Japanese Unexamined

and in the GZ-direction. On the side face of measurement

stage ST2 is provided moving mirror 37. Further, laser inter


ferometer 38 is positioned at a position facing moving mirror
37. The tWo-dimensional position and the rotation angle of

Patent Publication Hei 8-37149 that detects the surface posi


tion information of the surface of substrate P supported by

substrate stage ST1. The focus-leveling detection system


detects the surface position information of the surface of
substrate P (position information in the Z-axis-direction and
inclination information in the 0X- and GY-directions of sub
strate P). It is to be noted that as the focus-leveling detection

measurement stage ST2 are measured by laser interferometer


38 in real time.

It should be noted that While, in FIG. 1, moving mirror 33


and moving mirror 37 are respectively provided on overhang
portion H1 of the stage ST1 and overhang portion H2 of the
stage ST2, those moving mirrors may be respectively pro
vided on the side face under the overhang portions. By doing

system, a system that uses an electric capacitance type sensor

may be adopted. The measurement results from laser inter


ferometer 34 are outputted to controller CONT. The detection
results from the focus-leveling detection system are also out

putted to controller CONT. By operating driving mechanism

so, even When liquid LQ leaks out from upper surface F1 or


20

upper surface F2, overhang portion H1 or overhang portion


H2 can prevent liquid LQ from adhering to moving mirror 33

SD based on the detection results from the focus-leveling

or moving mirror 37.

detection system, controller CONT controls the focus posi

In the vicinity of the end portion of projection optical


system PL is provided an off-axis type alignment system

tion (Z-position) and inclination angles (0X, BY) of substrate


P to adjust the surface of substrate P to the image plane of

projection optical system PL and, at the same time, performs,

ALG that detects an alignment mark on substrate P and ?du


25

based on the measurement results from laser interferometer

34, the position control of substrate P in the X-axis-direction,


in the Y-axis-direction, and in the OZ-direction.
Measurement stage ST2 is movable on the image plane
side of projection optical system PL While various kinds of

cial mark on the ?ducial mark plate. In the alignment system


ALG of the embodiment, there is adopted such an FIA (Field

Image Alignment) type system as disclosed in, e.g., Japanese


Unexamined Patent Publication Hei 4-65603, in Which a

broad-band detecting light beam Which does not expose the


30

photosensitive material on substrate P is irradiated onto the

target mark, the target marks image imaged, by the re?ected


lights from the target mark, on the light receiving surface and

measuring devices (including members for measurement)


that perform measurements related to the exposure process

being mounted thereon. As those measuring devices, there

the image of ?ducial mark (?ducial mark pattern on a ?ducial

can be listed such a ?ducial mark plate on Which a plurality of


?ducial marks are formed as disclosed in, e.g., Japanese
Unexamined Patent Publication Hei 5-21314, such a unifor

mark plate provided in alignment system ALG), not shoWn,

mity sensor for measuring the illumination intensity unifor

are imaged by using an image pick-up device (e.g., a CCD),


and then by applying an image processing on the image
signals obtained, the marks position is measured.

mity as disclosed in, e. g., Japanese Unexamined Patent Pub


lication Sho 57-117238 or for measuring the variation amount

pair of mask alignment systems RAa and RAb, With those

of transmissivity of proj ection optical system PL for expo sure


light EL as disclosed in, e.g., Japanese Patent Application

35

Further, in the vicinity of mask stage MST are provided a


40

Y-axis-direction by a predetermined distance, each of Which


constitutes a TTR type alignment system, using a light having
the same Wavelength as the exposure light, for simultaneously

Publication No. 2001 -267239, such an aerial image measur

ing sensor as disclosed in, e.g., Japanese Patent Application

observing via projection optical system PL the alignment

Publication No. 2002-14005, and such a dose sensor (illumi

nation intensity sensor) as disclosed in Japanese Unexamined

45

Patent Publication Hei 11-16816. Uppers surface E2 of mea


surement stage ST2 is made a ?at surface (?at portion) so that

it is substantially equal in height to (co-planer With) upper


surface E1 of substrate stage ST1.

In the embodiment, corresponding to the performance of

mask alignment systems being mutually separated in the

50

the liquid immersion exposure, in Which substrate P is

marks on mask M and the corresponding ?ducial marks on the

?ducial mark plate. In the mask alignment system of the


embodiment, there is adopted such a VRA (Visual Reticle
Alignment) system as disclosed in, e.g., Japanese Unexam
ined Patent Publication Hei 7-176468, in Which a light is
irradiated onto the marks, and by applying an image process
ing on the image data of the marks imaged by, e.g., a CCD, the

exposed With exposure light EL via projection optical system


PL and liquid LQ, the above-mentioned uniformity sensor,

marks positions are detected.

aerial image measuring sensor, dose sensor, etc., Which are

mechanism 20 of liquid immersion mechanism 1 Will be

used for measurements using exposure light EL, receive


exposure light EL via projection optical system PL and liquid
LQ. Further, With respect to each sensor, only a portion of,
e.g., its optical system may be mounted on measurement
stage ST2 or the entirety of the sensor may be disposed on
measurement stage ST2.

Next, liquid supply mechanism 10 and liquid recovery


55

described. Liquid supply mechanism 10 is for supplying liq


uid LQ to the image plane side of projection optical system
PL and includes liquid supply portion 11 capable of deliver
ing liquid LQ and With supply pipe 13 of Which one end
portion is connected to liquid supply portion 11. The other

60

end portion of supply pipe 13 is connected to noZZle member

By operating driving mechanism SD Which includes linear

70. Inside noZZle member 70 is formed an inner ?oW path

motors etc. and is controlled by controller CONT, measure


ment stage ST2, in the state that the measuring devices are

supply pipe 13 to supply ports 12. Liquid supply portion 11

(supply ?oW path) that connects the other end portion of

mounted thereon, is tWo-dimensionally movable in the XY

plane substantially parallel to the image plane of projection


optical system PL and is ?nely rotatable in the GZ-direction,
on the image plane side of projection optical system PL.

includes a tank that stores liquid LQ, a pressuriZing pump, a


65

?lter unit that removes foreign particles in liquid LQ, etc. The
liquid supply operation of liquid supply device 11 is con
trolled by controller CONT.

US 8,456,609 B2
9

10

Liquid recovery mechanism 20 is for recovering liquid LQ


from the image plane side of projection optical system PL and
includes liquid recovery portion 21 capable of recovering

direction are embedded. In other Words, in the embodiment,


each of the moving coil typeY-axis linear motors 82 and 84 is
constituted by slider 90 constituted by the coil unit andY-axis

liquid LQ and With recovery pipe 23 of Which one end is


connected to liquid recovery portion 21. The other end of
recovery pipe 23 is connected to noZZle member 70. Inside
noZZle member 70 is formed an inner ?oW path (recovery ?oW
path) that connects the other end portion of recovery pipe 23
to recovery port 22. Liquid recovery portion 21 includes a

linear guide 91 and by slider 94 constituted by the coil unit


andY-axis linear guide 91, respectively. Similarly, each of the
moving coil typeY-axis linear motors 83 and 85 is constituted
by slider 92 and Y-axis linear guide 93 and by slider 95 and

Y-axis linear guide 93, respectively.


Slider 90 constituting Y-axis linear motor 82 and slider 92
constituting Y-axis linear motor 83 are respectively ?xed to
one end portion and the other end portion located in the

vacuum system (suction device), e.g., a vacuum pump, a

gas-liquid separator that separates the recovered liquid LQ


from gas, a tank that stores the recovered liquid LQ, etc.

longitudinal direction of X-axis linear guide 87 extending in


the X-axis-direction. Further, slider 94 constituting Y-axis

Supply ports 12 that supplies liquid LQ and recovery port


22 that recovers liquid LQ are formed on undersurface 70A of
noZZle member 70. Undersurface 70A of noZZle member 70 is

linear motor 84 and slider 95 constituting Y-axis linear motor


85 are respectively ?xed to one end portion and the other end

disposed in a position facing the surface of substrate P, upper


surface E1 of the stage ST1, and upper surface E2 of the stage
ST2. NoZZle member 70 is a ring-shaped member that is
provided so as to surround the side face of ?rst optical ele
ment LS1. A plurality of supply ports 12 are provided so as to

portion located in the longitudinal direction of X-axis linear


guide 89 extending in the X-axis-direction. Thus, X-axis lin
20

surround, in undersurface 70A of noZZle member 70, ?rst

optical element LS1 of proj ection optical system PL (optical


axis AX of projection optical system PL). Further, recovery
port 22 is provided, in undersurface 70A of noZZle member
70, outside supply ports 12 relative to ?rst optical element

25

opening portion formed in substrate stage ST1. Inside the


opening portion of substrate stage ST1 is provided magnet
unit 88 having a permanent magnet group constituted by
multiple pairs of an N-pole magnet and an S-pole magnet

LS1 and thus is provided so as to surround ?rst optical ele

ment LS1 and supply ports 12.

Finally, by supplying a predetermined amount of liquid LQ


onto substrate P by using liquid supply mechanism 10 and by,
at the same time, recovering a predetermined amount of liq

30

uid LQ on substrate P by using liquidrecovery mechanism 20,


controller CONT locally forms on substrate P liquid immer
sion region LR of liquid LQ. In forming liquid immersion
region LR of liquid LQ, controller CONT operates each of

liquid supply portion 11 and liquidrecovery portion 21. When


liquid LQ is delivered from liquid supply portion 11 under

ear guide 87 can be moved in the Y-axis-direction by Y-axis


linear motors 82 and 83; X-axis linear guide 89 can be moved
in the Y-axis-direction by Y-axis linear motors 84 and 85.
Each of X-axis linear guides 87 and 89 is constituted by a
coil unit in Which armature coils disposed at predetermined
intervals along, e. g., the X-axis-direction are embedded.
X-axis linear guide 89 is provided, in an inserted state, to an

disposed at predetermined intervals and alternately along,


e.g., the X-axis-direction. A moving magnet type X-axis lin
ear motor 81 that drives substrate stage ST1 in the X-axis
direction is constituted by magnet unit 88 and X-axis linear

guide 89. Similarly, X-axis linear guide 87 is provided, in an


35

inserted state, to an opening portion formed in measurement

stage ST2. In the opening portion of measurement stage ST2


is provided magnet unit 86. A moving magnet type X-axis

control of controller CONT, the liquid LQ delivered from

liquid supply portion 11 is, after ?oWing through supply pipe

linear motor 80 that drives measurement stage ST2 in the

13, supplied, via the supply ?oW path of noZZle member 70,
from supply ports 12 to the image plane side portion of
projection optical system PL. Further, When liquid recovery
portion 21 is driven under control of controller CONT, liquid
LQ on the image plane side of projection optical system PL
?oWs, via recovery port 22, into the recovery ?oW path of
noZZle member 70 and, after ?oWing through recovery pipe
23, is recovered by liquid recovery portion 21.

40

X-axis-direction is constituted by magnet unit 86 and X-axis


linear guide 87.

45

of Y-axis linear motors 84 and 85 (or 82 and 83) slightly


different from each other, control in the OZ-direction of sub
strate stage ST1 (or measurement stage ST2) can be imple
mented. Further, in the draWing, each of substrate stage ST1

Further, by making the driving forces generated by the pair

and measurement stage ST2 is illustrated as a single stage,

FIG. 2 is a draWing of substrate stage ST1 and measure

ment stage ST2, as vieWed from above. In FIG. 2, driving


mechanism SD for driving substrate stage ST1 and measure
ment stage ST2 includes linear motors 80, 81, 82, 83, 84, and
85. Driving mechanism SD includes a pair of Y-axis linear
guides 91 and 93 extending in the Y-axis-direction. Each of
Y-axis linear guides 91 and 93 is disposed such that they are

50

mutually separated, in the X-axis-direction, by a predeter


mined distance. Each of Y-axis linear guides 91 and 93 is
constituted by a magnet unit in Which a permanent magnet

55

hoWever, actually, each of the stages includes an XY stage


driven by the Y-axis linear motors and With a Z-tilt stage that
is mounted over the XY stage via a Z-leveling driving mecha
nism (e.g., voice coil motors) and is ?nely moved relative to
the XY stage in the Z-axis-direction, in the GX-direction, and
in the GY-direction. Further, substrate holder PH (see FIG. 1),
Which holds substrate P, is supported by the Z-tilt stage.
In the folloWing, referring to FIGS. 2-4B, there Will be

describedparallel processing operations using substrate stage

Y-axis-direction in a non-contact state. Similarly, on Y-axis

ST1 and measurement stage ST2.


As shoWn in FIG. 2, during a liquid immersion exposure of
substrate P, controller CONT makes measurement stage ST2
Wait at a predetermined Waiting position Where measurement
stage ST2 does not collide With substrate stage ST1. Further,
in the state that substrate stage ST1 and measurement stage
ST2 are mutually separated, controller CONT performs a

linear guide 93, Which is the other one of the Y-axis linear
guides, are supported tWo sliders 92 and 95 movably in the
Y-axis-direction in a non-contact state. Each of sliders 90, 92,
94, and 95 is constituted by a coil unit in Which armature coils

step-and-scan type liquid immersion exposure on substrate P


supported by substrate stage ST1. When substrate P is sub
jected to a liquid immersion exposure, controller CONT
forms liquid immersion region LR of liquid LQ on substrate

group constituted by multiple pairs of an N-pole magnet and


an S-pole magnet disposed at predetermined intervals and
alternately along, e.g., the Y-axis-direction is embedded. On
Y-axis linear guide 91, Which is one of the Y-axis linear
guides, are supported tWo sliders 90 and 94 movably in the

disposed at predetermined intervals along, e.g., the Y-axis

60

65

stage ST1 by using liquid immersion mechanism 1.

US 8,456,609 B2
11

12

Upon completion of the liquid immersion exposure on

and the second ?ducial mark, controller CONT determines


the distance betWeen the projection center of the mask pattern

substrate P in substrate stage ST1, controller CONT moves

formed by projection optical system PL and the detection


reference position of alignment systemALG, i.e., the baseline

measurement stage ST2 by using driving mechanism SD to


make measurement stage ST2 come into contact With or close

of alignment system ALG FIG. 4B shoWs the state at this


time.

to substrate stage ST1, as shoWn in FIG. 3A.

Next, While maintaining the relative positional relationship

Further, upon completion of the above-described processes


on both stages ST1 and ST2, controller CONT, for example,

in the Y-axis-direction betWeen substrate stage ST1 and mea


surement stage ST2, controller CONT moves substrate stage
ST1 and measurement stage ST2 simultaneously in the Y

makes measurement stage ST2 and substrate stage ST1 come


into contact With (or close to) each other and then moves the

direction by using driving mechanism SD. More speci?cally,

termined region including the position directly beneath pro

stages in the XY-plane in the state that their relative positional


relationship is maintained to perform alignment processes on
the exchanged substrate P. In this regard, a plurality of shot

jection optical system PL in a state that substrate stage ST1


and measurement stage ST2 are in contact With (or close to)
each other.

each of the plurality of shot areas are provided. Controller


CONT detects the alignment marks on the exchanged sub

controller CONT moves substrate stage ST1 and measure

ment stage ST2 together in the Y direction Within a prede

areas are set on substrate P. Alignment marks associated With

By moving substrate stage ST1 and measurement stage

strate P by using alignment system ALG and calculates the

ST2 together, controller CONT moves liquid immersion

position coordinates of each of the plurality of shot areas set


on substrate P relative to the detection reference position of

region LR of liquid LQ retained betWeen ?rst optical element


LS1 of projection optical system PL and substrate P, by Way

20

of upper surface P1 of substrate stage ST1, to upper surface


P2 of measurement stage ST2. In accordance With the move
ment in the Y direction of substrate stage ST1 and measure

ment stage ST2, liquid LQ s liquid immersion region LR that


Was formed betWeen ?rst optical element LS1 of projection
optical system and substrate P moves to the surface of sub
strate P, to upper surface P1 of substrate stage ST1, and to
upper surface P2 of measurement stage ST2, in this order. In

25

this regard, along the Way When liquid immersion region LR


of liquid LQ moves from upper surface P1 of substrate stage
ST1 to upper surface P2 of measurement stage ST2, liquid

30

alignment system ALG.


Thereafter, in reverse to the former process, by moving
substrate stage ST1 and measurement stage ST2 together in
the +Y direction While maintaining the relative positional
relationship in the Y-axis-direction betWeen both stages ST1
and ST2, controller CONT moves substrate stage ST1 (sub
strate P) under projection optical system PL and then moves
measurement stage ST2 to a predetermined position. By this,
liquid immersion region LR is disposed on upper surface P1
of substrate stage ST1. Also along the Way When liquid
immersion region LR of liquid LQ is moved from upper
surface P2 of measurement stage ST2 to upper surface P1 of

immersion region LR is disposed such that it straddles the


boundary region betWeen upper surface P1 of substrate stage

substrate stage ST1, liquid immersion region LR is disposed

ST1 and upper surface P2 of measurement stage ST2, as


shoWn in FIG. 3B.

surface P1 of substrate stage ST1 and upper surface P2 of


measurement stage ST2.

such that it straddles the boundary region betWeen upper


35

Thereafter, controller CONT performs a step-and-scan

When, from the state of FIG. 3A, substrate stage ST1 and
measurement stage ST2 further move together in the Y
direction by a predetermined distance, there occurs, as shoWn
in FIG. 4A, the state in Which liquid LQ is retained betWeen

?rst optical element LS1 of proj ection optical system PL and


measurement stage ST2. In other Words, liquid immersion
region LR of LQ is disposed on upper surface P2 of measure

40

substrate P obtained through the above-described substrate


alignment and upon the baseline measured just before.

ment stage ST2.


Next, controller CONT moves substrate stage ST1 to a

predetermined substrate exchange position by using driving

45

mechanism SD to exchange substrate P and, in parallel to this


process, performs predetermined measurement processes
using measurement stage ST2, as required. As an example of
such measurement processes, there is the baseline measure

ment of alignment system ALG. Speci?cally, controller

50

CONT simultaneously detects a pair of ?rst ?ducial marks on


?ducial mark plate FM provided on measurement stage ST2
and mask alignment marks on mask M corresponding to the

parallel to, e.g., the substrate exchange process, by using


re?ected in the exposure of substrate P performed thereafter,
by performing, e. g., a calibration process of proj ection optical
system PL based upon the measurement results from such

55 measurements.

Further, in the above-described description, the alignment

ment marks corresponding thereto. Further, by detecting a

process on the exchanged substrate P is performed in the state


that substrate stage ST1 and measurement stage ST2 are in

second ?ducial mark on ?ducial mark plate PM by use of

alignment system ALG, controller CONT detects the posi


tional relationship betWeen the detection reference position

It is to be noted that the measurement operation should not


be limited to the above-described baseline measurement; it
may also be con?gured such that an illumination intensity
measurement, an illumination intensity uniformity measure
ment, an aerial image measurement, etc. are performed in
measurement stage ST2, and such measurements are

?rst ?ducial marks by using the above-described mask align


ment systems RAa and RAb and detects the positional rela
tionship betWeen the ?rst ?ducial marks and the mask align

type liquid immersion exposure process on substrate P to


sequentially transfer the pattern of mask M onto each of the
plurality of shot areas on substrate P. It is to be noted that the
movement (position) of substrate stage ST1 for the purpose of
exposing each shot area on substrate P is controlled based
upon the position coordinates of the plurality of shot areas on

60

of alignment system ALG and the second ?ducial mark. Fur

contact With (or close to) each other, hoWever it may also be
con?gured such that upon completion of the alignment pro

ther, based upon the detected positional relationship betWeen

cess on exchanged substrate P, substrate stage ST1 and mea


surement stage ST2 are made to come into contact With (close

the above-described ?rst ?ducial marks and the mask align

to) each other to move liquid immersion region LR.

ment marks corresponding thereto, the detected positional


relationship betWeen the detection reference position of
alignment system ALG and the second ?ducial mark, and a
knoWn positional relationship betWeen the ?rst ?ducial marks

Since, in the embodiment, liquid immersion region LR of


65

liquid LQ can be moved betWeen upper surface P1 of sub


strate stage ST1 and upper surface P2 of measurement stage
ST2 Without performing such processes as full recovery of

US 8,456,609 B2
13

14

liquid LQ and re-supply of liquid LQ, the time between the


completion of the exposure operation in substrate stage ST1

La is refracted, scattered, or absorbed by liquid LQ. Accord


ingly, When there is liquid LQ on the optical path of detecting

light La, the light amount (light intensity) received by light

and the beginning of the measurement operation in measure


ment stage ST2 and the time betWeen the measurement

receiving portion 62 decreases, or detecting light La does not


reach light receiving portion 62. Thus, based on the light

completion in measurement stage ST2 and the beginning of


the exposure operation in substrate stage ST1 are shortened,
and thus the throughput can be improved. Further, since liquid

reception results (light-reception amount) from light receiv


ing portion 62, detecting device 60 can detect Whether there is

LQ alWays exists on the image plane side of projection optical

liquid LQ on the optical path of detecting light La. And thus,


by detecting Whether there is liquid LQ on the optical path of
detecting light La, detecting device 60 can detect Whether

system PL, generation of an adhesion trace (so-called Water

mark) can be effectively prevented.


As described above, along the Way When liquid immersion
region LR of liquid LQ is moved from upper surface P1 of

liquid LQ has leaked from gap G.

Similarly, light projecting portion 63 and light receiving


portion 64 face each other; detecting light Lb emitted from

substrate stage ST1 to upper surface P2 of measurement stage


ST2 or along the Way When the liquid is moved from upper
surface P2 of measurement stage ST2 to upper surface P1 of

light projecting portion 63 reaches light receiving portion 64;

substrate stage ST1, there arises the state that liquid immer
sion region LR is disposed such that it straddles the boundary
region betWeen upper surface P1 of substrate stage ST1 and
upper surface P2 of measurement stage ST2.
FIG. 5 is a draWing shoWing the state in Which liquid

20

by liquid LQ. Accordingly, based on the light reception


results (light-reception amount) from light receiving portion

immersion region LR straddles the boundary region betWeen


upper surface P1 of substrate stage ST1 and upper surface P2

of measurement stage ST2. In this state, liquid LQ of liquid


immersion region LR may leak from betWeen substrate stage
ST1 and measurement stage ST2. When liquid LQ leaks from
gap G betWeen upper surface P1 of substrate stage ST1 and
upper surface P2 of measurement stage ST2, the liquid LQ
having leaked drops from the upper surfaces F1 and F2 by the

25

30

overhang portion H1 and overhang portion H2, respectively.

device 60 can detect leakage of liquid LQ over a Wide range


of space H and base member BP. Further, When controller
CONT judges based on the detection results from detecting

device 60 that liquid LQ has leaked, controller CONT, for


example, decreases the per-unit-time liquid supply amount by
liquid supply mechanism 10 or stops supplying liquid LQ by

Thus, even When upper surface P1 of substrate stage ST1 and


upper surface P2 of measurement stage ST2 are made to come

close to or into contact With each other, it is con?gured such


that space H is formed under the portion Where upper surface

64, detecting device 60 can detect Whether there is liquid LQ


on the optical-path of detecting light Lb and thus can detect
Whether there is liquid LQ on upper surface BT of base
member BP.

Each of detecting lights La and detecting lights Lb pro


ceeds side by side along the X-axis-direction. Thus, detecting

action of gravitation. Detecting device 60 detects in a non

contact manner the liquid LQ having leaked.


Substrate stage ST1 and measurement stage ST2 have

and it is con?gured such that detecting light Lb is received by


light receiving portion 64 at a predetermined level of light
amount (light intensity). In this regard, if, as shoWn in FIG. 5,
When liquid LQ having leaked is disposed on upper surface
BT of base member BP, detecting light Lb illuminates liquid
LQ, then detecting light Lb is refracted, scattered, or absorbed

35

liquid supply mechanism 10. Alternatively, based on the


detection results from detecting device 60, controller CONT

F1 and upper surface F2 are close to or in contact With each

increases the per-unit-time liquid recovery amount by liquid

other, i.e., under gap G. Thus, liquid LQ having leaked from

recovery mechanism 20. Alternatively, based on the detection

results from detecting device 60, controller CONT stops the

gap G drops, after passing through space H, onto base mem


ber BP. Further, even When upper surface P1 of substrate stage
ST1 and upper surface P2 of measurement stage ST2 are

40

made to come close to or into contact With each other, the

optical path spaces of detecting light La and detecting light Lb


are secured by space H. Here, detecting light La emitted from

light projecting portion 61 and detecting light Lb emitted


from light projecting portion 63 proceed substantially in par

45

allel to the XY-plane. In particular, detecting light Lb emitted


from light projecting portion 63 proceeds, in the vicinity of
base member BP, substantially in parallel to upper surface BT
of base member BP.

50

light Lb to be located near gas bearings 41 and 42, liquid LQ

results from light receiving portion 62, detecting device 60

can be detected by using detecting light Lb before liquid LQ


55

receiving portion 62 at a predetermined level of light amount


(light intensity). In this regard, When, as shoWn in, e. g., FIG.
5, liquid LQ having leaked from gap G drops and passes

through the optical path of detecting light La, detecting light

on base member BP ?oWs into gas suction ports of gas bear

ings 41 and 42; thus, by taking an appropriate action depend


ing on the detection results, it can be precluded that liquid LQ
having ?oWed out onto base member BP ?oWs into gas suc
60

tion ports of gas bearings 41 and 42. Further, When liquid LQ


penetrates betWeen the undersurfaces (bearing surfaces) of

65

gas bearings 41 and 42 and upper surface BT of base member


BP, the Z-direction positions of the stages ST1 and ST2 may
vary due to the liquid LQ. HoWever, an appropriate action can
be taken based on the detection results from detecting device
60. Further, When controller CONT judges based on the

member BP.

Light projecting portion 61 and light receiving portion 62


face each other; detecting light La emitted from light project
ing portion 61 reaches light receiving portion 62; and it is
con?gured such that detecting light La is received by light

stages ST1 and ST2. In this Way, When leakage of liquid LQ


is detected, controller CONT can, by taking an appropriate
action, prevent liquid LQ from ?oWing out onto, e.g., the ?oor
on Which exposure apparatus EX, spreading the damage.
Additionally, gas bearings 41 and 42 provide With gas suction
ports. When there is liquid LQ on base member BP, liquid LQ
may ?oW into the gas suction ports of gas bearings 41 and 42.
Thus, When controller CONT judges based on the light recep
tion results from light receiving portion 64 that there is liquid
LQ on base member BP, controller CONT may stop the

sucking operation through gas suction ports of gas bearings


41 and 42. Further, by setting the optical path of detecting

Based on the light reception results from light receiving


portion 62, detecting device 60 detects Whether there is liquid
LQ in space H. More speci?cally, based on light reception
can detects liquid LQ that leaks from gap G, drops, and passes
through space H. Further, based on light reception results
from light receiving portion 64, detecting device 60 can detect
Whether there is liquid LQ on upper surface BT of base

exposure operation on substrate P or the movement of the

detection results from detecting device 60 that liquid LQ has


leaked, controller CONT may raise an alarm by operating an

US 8,456,609 B2
15

16

alarm device, not shown. Since, by this, an operator, for


example, can recognize that liquid LQ has leaked, he or she

Third Embodiment
FIG. 7 is a draWing exposure apparatus EX in accordance
With a third embodiment. Exposure apparatus EX shoWn in
FIG. 7 is such a so-called tWin-stage type exposure apparatus
as disclosed in, e.g., Japanese Unexamined Patent Publica

can take an appropriate action. The alarm device may raise an

alarm by using a Warning light, a Warning sound, a display, or


the like.

tion Hei 10-163099, Japanese Unexamined Patent Publica


tion Hei 10-214783, and Published Japanese Translation
2000-505958, in Which tWo substrate stages ST1 and ST2

Since, in the embodiment, it is con?gured such that detect


ing device 60 optically detects liquid LQ in a non-contact
manner, there is no need to dispose Wirings or various kinds of

that are movable While holding a substrate are provided. Also

devices in the vicinity of, e.g., base member BP or driving

in exposure apparatus EX shoWn in FIG. 7, liquid immersion

mechanism SD. Thus, the amount of in?uence on the move


ments of the stages ST1 and ST2 can be reduced.

region LR can be moved betWeen upper surface E1 of ?rst


substrate stage ST1 and upper surface E2 of second substrate

Second Embodiment
FIG. 6 is a draWing shoWing a second embodiment. In the
folloWing description, With respect to the same or equivalent
constituent elements as those in the above-described embodi
ment, their descriptions Will be abridged or omitted. Detect
ing device 60' shoWn in FIG. 6 has both of a function of a light

projecting portion emitting detecting light La and a function


of a light receiving portion receiving the light. Detecting

stage ST2. Further, by providing detecting device 60 (60) as


in the case of the above-described embodiments, liquid LQ
having leaked from betWeen ?rst substrate stage ST1 and
second substrate stage ST2 When moving liquid immersion
region LR from the surface of one of the stages of ?rst sub
strate stage ST1 and second substrate stage ST2 to the upper
surface of the other stage can be detected.
20

device 60 is provided on overhang portion H2 of measure


ment stage ST2. On the other hand, re?ecting member 66
having re?ecting surface 65 is provided on a position that is
located on overhang portion H1 of substrate stage ST1 and

faces detecting device 60. Detecting device 60 illuminates


re?ecting surface 65 With detecting light La, receives, at the
same time, the re?ected light from re?ecting surface 65, and
detects, based upon the light reception results, Whether liquid

easily available in bulk in, e.g., semiconductor manufacturing


factories and also the advantage that it does not adversely
affect photoresist on substrate P, optical elements (lenses),
25

optical element provided at the end portion of projection


optical system PL can be expected. It should be noted that
30

detecting light La emitted from detecting device 60 is


received by detecting device 60 at a predetermined level of
light intensity. In contrast, since When liquid LQ exists on the

optical path of detecting light La, detecting light La is scat


tered or absorbed by liquid LQ, the re?ected light thereof is
received by detecting device 60 at a level of light intensity
loWer than the above-mentioned predetermined level of light
intensity. Based upon the light reception results of the

35

When the purity of the puri?ed Water supplied from, e.g., the
factory, it may be con?gured such that the exposure apparatus
itself has an ultrapure Water system.
The refractive index n of puri?ed Water (Water) relative to
exposure light EL having a Wavelength of about 193 m is said
to be approximately 1.44, and When ArF excimer laser light
(having 193 nm Wavelength) is used as the light source of

exposure light EL, the Wavelength is effectively shortened, on


substrate P, as if multiplied by l/n, i.e., effectively becomes

re?ected light, detecting device 60 can detect Whether there is

liquid LQ on the optical path of detecting light La and, thus,

etc. Further, puri?ed Water does not adversely affect the envi
ronment and contains scarcely any impurities; thus, the effect
that it cleans the surface of substrate P and the surface of the

LQ has leaked from gap G. When liquid LQ does not exist on

the optical path of detecting light La, the re?ected light of

As described above, in the embodiments, liquid LQ is


puri?ed Water. Puri?ed Water has the advantage that it is

approximately 134 nm, and thus, a high resolution can be


40

obtained. Further, since the depth of focus increases by

Whether liquid LQ has leaked. With re?ecting surface 65

approximately n times, i.e., approximately by 1.44 times,

being provided, the received light intensity difference

compared With that in the air, When securing of the depth of

betWeen the case When liquid LQ exists on the optical path of


detecting light La and the case When liquid LQ does not exist
thereon becomes large; thus, detecting device 60 can detect
With high accuracy Whether there is liquid LQ on the optical

focus on par With the depth of focus realiZed When the pro
45

path of detecting light La.


In addition, in this embodiment, the optical path of detect
ing light La emitted from detecting device 60 exists Within
gap G betWeen upper surface F1 and upper surface F2. By

jection optical system is used in the air su?ices, the numerical


aperture of the projection optical system PL can be further
increased; Which also improves the resolution.
It should be noted that While, in the embodiments, liquid
LQ is Water (puri?ed Water), liquid LQ may be a liquid other
than Water. For example, When the light source of exposure

50

light EL is an F2 laser, the F2 laser light does not transmit

adopting such con?guration, liquid LQ having leaked into

through Water, and thus, as liquid LQ, a ?uoro?uid that can

gap G can be immediately detected by using detecting light

transmit the F2 laser light, such as per?uoropolyether (PFPE)

La.

or ?uorochemical oil, may be used. In this case, the portions


that come into contact With liquid LQ are applied With lyo
philic treatment, by forming a thin ?lm of a substance Which

It should be noted that it may also be con?gured such that

detecting device 60 having both functions of a light project


ing portion and a light receiving portion is provided on ?rst
side surface T1 (second side surface T2) that has been
described referring to FIG. 5, and re?ecting member 66 is
provided on second side surface T2 (?rst side surface T1).
Similarly, it may also be con?gured such that detecting device
60 is provided on gas bearing 41 (gas bearing 42) that has
been described referring to FIG. 5, and re?ecting member 66
is provided on gas bearing 42 (gas bearing 41). Conversely, it
may also be con?gured such that light projecting portion 61

55

that has been described referring to FIG. 5 is provided on

65

overhang portion H1 (or H2), and light receiving portion 62 is


provided on overhang portion H2 (or H1).

includes, e.g., ?uorine and has a molecular structure of a

60

small polarity. Further, as liquid LQ, a material (e.g., cedar


oil) that can transmit exposure light EL, has a high refractive
index as high as practicable, and does not affect projection
optical system PL and the photoresist applied to the surface of
substrate P can also be used. Also in this case, the surface

treatment is applied in accordance With the polarity of liquid


LQ to be used.
Further, While the exposure apparatus, to Which the above

described immersion liquid method is applied, is con?gured


such that With the optical path space on the exit side of ?rst

optical element LS1 of projection optical system PL being

US 8,456,609 B2
17

18

?lled With a liquid (puri?ed Water), substrate P is exposed, the


optical path space on the incidence side of ?rst optical ele
ment LS1 of projection optical system PL may also be ?lled
With the liquid (puri?ed Water), as disclosed in the Interna

apparatus for manufacturing liquid crystal display devices or


a displays, an exposure apparatus for manufacturing thin ?lm

magnetic heads, an exposure apparatus for manufacturing


image pickup devices (CCDs), and an exposure apparatus for

tional Publication WO 2004/019128.


It is to be noted that regarding substrate P of each of the
above-described embodiments, not only a semiconductor
Wafer for manufacturing a semiconductor device, but also a
glass substrate for a display device, a ceramic Wafer for a thin
?lm magnetic head, a master mask or reticle (synthetic quartz

manufacturing reticles or masks.

Exposure apparatus EX according to the embodiments of


the present application is built by assembling various sub
systems, including each element listed in the claims of the
present application, in such a manner that prescribed
mechanical accuracy, electrical accuracy, and optical accu
racy are maintained. In order to ensure the various accuracies,

or silicon Wafer), etc. can be used.

prior to and after the assembly, every optical system is


adjusted to achieve its optical accuracy, every mechanical

Regarding exposure apparatus EX, in addition to a scan

type exposure apparatus (scanning stepper) in Which While


synchronously moving mask M and substrate P, the pattern of
mask M is scan-exposed, a step-and-repeat type projection

invention can be applied to an exposure apparatus in Which in


the state that a ?rst pattern and substrate P are substantially

system is adjusted to achieve its mechanical accuracy, and


every electrical system is adjusted to achieve its electrical
accuracy. The process of assembling each subsystem into the
exposure apparatus includes mechanical interfaces, electrical
circuit Wiring connections, and air pressure plumbing con
nections betWeen each subsystem. Needless to say, there is
also a process Where each subsystem is assembled prior to the
assembling of the exposure apparatus from the various sub
systems. On completion of the process of assembling the

stationary, the reduction image of the ?rst pattern is exposed

various subsystems in the exposure apparatus, overall adjust

exposure apparatus (stepper) in Which the pattern of mask M


is exposed at one time in the condition that mask M and
substrate P are stationary, and substrate P is successively
moved stepWise can be used.

Further, regarding exposure apparatus EX, the present

at one time by using a projection optical system (e.g., a


refraction type projection optical system that has a reduction
magni?cation of 1/8 and includes no re?ecting element). In

20

ment is performed to make sure that every accuracy is main


25

tained in the complete exposure apparatus. Additionally, it is

30

desirable to manufacture the exposure apparatus in a clean


room, in Which the temperature, purity, etc. are controlled.
As shoWn in FIG. 8, micro devices such as semiconductor
devices are manufactured by a series of steps, including: step
201 in Which the micro devices function and performance

this case, the present invention can be applied to a stitch type

one-shot exposure apparatus in Which thereafter, in the state


that a second pattern and substrate P are substantially station

ary, the reduction image of the second pattern is exposed at


one time onto substrate P by using the projection optical
system in a manner that the ?rst pattern image and the second

design is performed; step 202 in Which a mask (reticle) is


manufactured based on the design step; step 203 in Which a

pattern image partially overlap With each other. Further, in

substrate, the devices base material, is manufactured; sub

conjunction With the stitch type exposure apparatus, the

strate processing step 204 including a process in Which the


mask pattern is exposed onto the substrate by exposure appa
ratus EX according to the above-described embodiments;
device assembly step 205 (including a dicing process, a bond

present invention can also be applied to a step-and-stitch type

35

exposure apparatus in Which at least tWo patterns are trans

ferred onto substrate P in a partially overlapping manner, and

substrate P is successively moved.


In the above-described embodiments, a light transmission
type mask on Which a predetermined light-shielding pattern
(or a phase pattern/light decreasing pattern) is formed on a
light transmissive substrate is used, hoWever, instead of such
mask, an electronic mask that forms, based upon the elec
tronic data of a pattern to be exposed, a transmission pattern,
a re?ection pattern, or a light emitting pattern may also be
used, as disclosed in, e.g., U.S. Pat. No. 6,778,257.
Further, the present invention can be applied also to an

ing process, and a packaging process); inspection step 206.


40

via a projection optical system, the apparatus comprising:


a ?rst stage Which is movable relative to the projection

optical system;
a second stage Which is movable relative to the projection
45

Publication WO 2001/035168 pamphlet.


Further, While, in the above-described embodiments, the
exposure apparatus, in Which the liquid locally ?lls the space
betWeen projection optical system PL and substrate P, is
adopted, the present invention can also be applied to a liquid
immersion exposure apparatus in Which the entire surface of
a substrate to be exposed is covered by a liquid. The structure
and exposure operation of an exposure apparatus in Which the
entire surface of a substrate to be exposed is covered by a
liquid are described in, e.g., Japanese Unexamined Patent

region of a liquid under the projection optical system,


Wherein the ?rst and second stages are moved in a state in
50

such that the liquid of the liquid immersion region does


not leak out from betWeen the ?rst and second stages
While the liquid immersion region is moved from one of
55

upper surfaces of the ?rst and second overhang portions


to the other of the upper surfaces of the ?rst and second

overhang portions.
60

2. The exposure apparatus of claim 1, Wherein an area of


the liquid immersion region is smaller than an area of a
substrate held on one of the ?rst and second stages.

3. The exposure apparatus of claim 1, Wherein the ?rst


stage includes a substrate holder that holds a substrate.

Publication Hei 10-303114, or U.S. Pat. No. 5,825,043.

Regarding the type of exposure apparatus EX, the present


facturing semiconductor devices, hoWever can also be
applied to a variety of exposure apparatuses, e.g., an exposure

Which a ?rst overhang portion provided at the ?rst stage


and a second overhang portion provided at the second
stage are brought close to or in contact With each other,

Publication Hei 6-124873, Japanese Unexamined Patent


invention is not limited to an exposure apparatus, Which
exposes a semiconductor pattern onto substrate P, for manu

optical system; and


a liquid immersion system that forms a liquid immersion

exposure apparatus (lithography system) in Which by forming


interference fringes on substrate P, a line-and- space pattern is
exposed onto substrate P, as disclosed in the International

The invention clamed is:


1. An exposure apparatus in Which a substrate is exposed

4. The exposure apparatus of claim 3, Wherein the second


stage includes a substrate holder that holds a substrate.
65

5. The exposure apparatus of claim 1, Wherein the upper


surface of the ?rst overhang portion and the upper surface of
the second overhang portion are in a same plane When the

US 8,456,609 B2
19

20

liquid immersion region is moved from the one of the upper


surfaces to the other of the upper surfaces.
6. The exposure apparatus of claim 1, Wherein the ?rst

moving the liquid immersion region from the upper surface

overhang portion extends along only one side of the ?rst

moving taking place While the ?rst and second stages are

of the one of the ?rst and second stages to an upper

surface of the other of the ?rst and second stages, the

stage, and the second overhang portion extends along only

in a state in Which a ?rst overhang portion provided at the

one side of the second stage.

?rst stage and a second overhang portion provided at the

7. The exposure apparatus of claim 1, Wherein the liquid


immersion system surrounds a ?nal optical element of the

other, such that the liquid of the liquid immersion region

second stage are brought close to or in contact With each

projection optical system and includes a liquid supply port by


Which the liquid is supplied to the liquid immersion region,

does not leak out from betWeen the ?rst and second

and a liquid recovery port by Which the liquid is recovered

one of upper surfaces of the ?rst and second overhang


portions to the other of the upper surfaces of the ?rst and

stages While the liquid immersion region is moved from

from the liquid immersion region.

second overhang portions While liquid is present in the

8. An immersion exposure apparatus comprising:


a projection optical system having a ?nal optical element
by Which an image of a pattern is projected onto a sub

liquid immersion region.


15

strate;
a ?rst stage Which is movable relative to the projection

a ?nal optical element of the projection optical system during


the moving.

optical system, the ?rst stage having a substrate holder


on Which the substrate is held and having a ?rst overhang
portion on one side;
a second stage Which is movable relative to the projection

20

18. The method of claim 16, Wherein an area of the liquid


immersion region is smaller than an area of a substrate held on

one of the ?rst and second stages.

optical system, the second stage having a second over


hang portion on one side;
a liquid immersion system that surrounds the ?nal optical

element of the projection optical system and that forms

17. The method of claim 1 6, Wherein the liquid of the liquid


immersion region remains in contact With a loWer surface of

19. The method of claim 16, Wherein the ?rst stage includes
a substrate holder that holds a substrate.
25

20. The method of claim 19, Wherein the second stage

a liquid immersion region of a liquid under the ?nal

includes a substrate holder that holds a substrate.

optical element of proj ection optical system; and

21. The method of claim 16, Wherein the upper surface of


the ?rst overhang portion and the upper surface of the second
overhang portion are in a same plane When the liquid immer

a controller that controls movement of the ?rst and second

stages to cause the liquid immersion region to be moved


from an upper surface of one of the ?rst and second

30

overhang portions to an upper surface of the other of the


?rst and second overhang portions in a state in Which the

?rst overhang portion and the second overhang portion


are brought close to or in contact With each other such

that the liquid of the liquid immersion region does not

35

leak out from betWeen the ?rst and second stages, While
the liquid remains in contact With a loWer surface of the

?nal optical element of the projection optical system.


9. The exposure apparatus of claim 8, Wherein an area of
the liquid immersion region is smaller than an area of the
substrate.

40

10. The exposure apparatus of claim 8, Wherein the second


stage includes a second substrate holder that holds a substrate.
11. The exposure apparatus of claim 8, Wherein an upper
surface of the second stage includes measurement structures.

sion region is moved from the one of the upper surfaces to the
other of the upper surfaces.

22. The method of claim 16, Wherein the ?rst overhang


portion extends along only one side of the ?rst stage, and the
second overhang portion extends along only one side of the
second stage.
23. The method of claim 16, Wherein the liquid immersion
region is formed by a liquid immersion system that surrounds
a ?nal optical element of the projection optical system and
includes a liquid supply port by Which the liquid is supplied to
the liquid immersion region, and a liquid recovery port by
Which the liquid is recovered from the liquid immersion

region.

12. The exposure apparatus of claim 8, Wherein the upper


surface of the ?rst overhang portion and the upper surface of

24. The exposure apparatus of claim 1,


Wherein the ?rst stage is capable of holding a substrate, and
the upper surface of the ?rst overhang portion and a
surface of the substrate held by the ?rst stage are sub

the second overhang portion are in a same plane When the


liquid immersion region is moved from the one of the upper
surfaces to the other of the upper surfaces.
13. The exposure apparatus of claim 8, Wherein the ?rst

25. The exposure apparatus of claim 24,


Wherein the upper surface of the ?rst overhang portion and

45

stantially in a same plane.


50

overhang portion extends along only the one side of the ?rst

the surface of the substrate are substantially in a same

stage, and the second overhang portion extends along only the

plane, When the liquid immersion region is moved from


the one of the upper surfaces to the other of the upper

one side of the second stage.

14. The exposure apparatus of claim 8, Wherein the liquid


immersion system includes a plurality of the liquid supply
ports and a plurality of the liquid recovery ports.
15. A device manufacturing method comprising:
exposing a substrate to a pattern using the immersion expo
sure apparatus of claim 8; and

55

Wherein the upper surface of the ?rst overhang portion and


an upper surface of the ?rst stage are substantially in a
60

developing the exposed substrate.


16. An immersion exposure method comprising:
forming a liquid immersion region of a liquid under a

projection optical system, the liquid immersion region


being formed betWeen the projection optical system and
an upper surface of one of a ?rst stage and a second

stage; and

surfaces.
26. The exposure apparatus of claim 1,

same plane, the upper surface of the ?rst stage surround


ing a substrate held by the ?rst stage.
27. The exposure apparatus of claim 26,
Wherein the upper surface of the ?rst overhang portion and
the upper surface of the ?rst stage are substantially in a

65

same plane, When the liquid immersion region is moved


from the one of the upper surfaces to the other of the
upper surfaces.

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