GAT- Subject

(Electronics)

Muhammad Sarmad Hafeez

FOREWORD
To the reader of this book.

Please note you can copy, paste, photocopy or share this book in print or soft or any other form you
can find. Because I believe in total freedom of Information.

The major portion of this book is not my own creation. It is just an observation of different electronic
concepts extracted from various text books and then the multiple choice questions are created. And
thanks to my wonderful Research Assistants and Teaching Fellows not to miss modern software that
made this book not as much of a tedious task as might have appeared first, for me at least.

This book is designed to facilitate the most people who are attempting Graduate Assessment Test -
Subject aka GAT - Subject. No book under this title is available in the market.

This book is just a feeble attempt to facilitate students, because I believe each and every person in
this world has a unique idea in him/her to change the world if given proper facilitation and
opportunity.

Please Benefit as much as you can.

Sincere Regards,
Muhammad Sarmad Hafeez
HOW TO MAKE MOST OF THIS BOOK
This book is more of a compilation to help students of electronics in general and engineers as well as
graduates of electronics in specific. To help developing better concepts and better approach in order
to solve electronics related problems.

As mentioned before you can share and distribute this book any way you like. And the best to make
of this boom is share it as much as possible.

This book does not have teaching notes and evaluation sections just yet. But please keeping visiting
the link given below so you can get latest (hopefully better) version of this book every time you need
to go over it.

Link : https://www.scribd.com/document/333392407/GAT-Subject-Electronics
ABOUT THE AUTHOR
The author of this book, lives in Islamabad Pakistan. And has worked for 6 prestigious institutes of
the including Universities.

He has also been part of several social educational ventures. And is consultant for several more.

If you ever feel to contact him, feel free to contact him anytime, preferably on social media where
he spends most of his time nowadays, provably researching for his next book.

Facebook Profile : https://www.facebook.com/m.sarmadhafeez

Facebook Page : https://www.facebook.com/pgsarmadhafeez/
Twitter : @CMSHB
E-Mail : m.sarmadhafeez@gmail.com
1/- Which of the following constitutes an active component?

(a) Semi-conductor Device

(b) Resistors
(c) Capacitors
(d) Inductors

2/- Which of the following is an active device?

(a) Transformer
(b) Silicon Controlled Rectifier
(c) Electric Bulb
(d) Loudspeaker

3/- The conductivity of materials found in nature ranges from 109 ohm-1 m-1 to nearly 10-18 ohm-1 cm-1
will be nearly

(a) 0.5 x 10-15

(b) 0.5 x 10-21
(c) 0.5 x 10-12
(d) 0.5 x 10-3

4/- The process by which impurities are added to a pure semi-conductor is

(a) Diffusing
(b) Drift
(c) Doping
(d) Mixing

5/- Which of the following is a passive component ?

(a) Semmi conductor device

(b) Vacuum Tube device
(c) Capacitors
(d) All of the above

6/- Which of the following is used as a passive component in electronic circuits?

(a) Tunnel Diode

(b) Capacitor
(c) Transistors
(d) Vacuum Diode

7/- A Germanium atom contains

(a) Two electron orbits

(b) Three valence electrons
(c) Four protons
(d) Four valance electrons

8/- If the conductivity of pure Germanium is 1.54 seimens/metre, its resitivity in ohm-metre will be
nearly

(a) 65
(b) 6.5
(c) 0.65
(d) 0.065

9/- The type of atomic bonding most common in semi-conductor is

(a) Metallic
(b) Ionic
(c) Covalent
(d) Chemical

10/- When an atom either gains or loses an electron it is said to be

(a) Ionized
(b) Bonded
(c) Excited
(d) Stabilized

11/- The diameter of an atom is

(a) 10-6metre
(b) 10-10metre
(c) 10-15metre
(d) 10-21metre

12/- The atomic weight of an atom is determined by

(a) The number of protons

(b) The number of nuetrons
(c) The number of protons & nuetrons
(d) The number of protons & electrons

13/- The constituents of an atoms are

I. Protons
II. Neutrons
III. Electrons
IV. Positrons

The mass of which two constitutes is nearly the same ?

(a) I and II only

(b) II and III only
(c) I and III only
(d) II and IV only

14/- The number of protons in an atom is called its

(a) Isotope number

(b) Atomic number
(c) Atomic weight
(d) None of the above
15/- The maximum number of electrons in third orbit can be

(a) 3
(b) 6
(c) 12
(d) 18

16/- Valence electrons are the

(a) Loosely packed electrons

(b) Mobile electrons
(c) Electrons present in the outermost orbit
(d) Electrons that do not transmit any charge

17/- Which of the following element has lowest atomic number ?

(a) B
(b) Al
(c) Ga
(d) In.

18/- Which of the following element does not occur in third group of periodic table ?

(a) Indium
(b) Helium
(c) Aluminium
(d) Boron

19/- The atomic number of silicon is 14. It can be therefore concluded that:

(a) A silicon atom contains 14 protons

(b) A silicon atom contains 14 neutrons
(c) A silicon atom contains 14 electrons
(d) All of these

20/- The atomic number of germanium is 32, the number of electrons in the outcome shell be

(a) 2
(b) 3
(c) 4
(d) 6

21/- Which of the following does not have three valence electrons ?

(a) Boron
(b) Aluminium
(c) Gallium
(d) Phosphorous

22/- Which of the following element does not have five valance electrons ?

(a) Phosphorous
(b) Arsenic
(c) Antimony
(d) Indium

23/- Which of the following element has four valance electrons ?

(a) Silicon
(b) Germanium
(c) Both a and b
(d) None of the above

24/- The total energy of an electron in an atom will be maximum when it is

(a) Closest to the nucleus

(b) In the even numbered orbit
(c) Odd numbered orbit
(d) In an orbit farthest from the nucleus

25/- Which of the following element has four valance electrons

(a) Silicon
(b) Antimony
(c) Phosphorous
(d) Boron

26/- A germanium atom has

(a) Five valance electrons

(b) Four protons
(c) Three valance electrons
(d) Two electron orbits

27/- If an electron move through a potential difference of 500V, the energy possessed by it will be

(a) 500 ergs

(b) 500 joules
(c) 500 eV
(d) 500 mV

28/- One electron volt is equivalent to

(a) 1.6 x 10-10 joules

(b) 1.6 x 10-13 joules
(c) 1.6 x 10-16 joules
(d) 1.6 x 10-19 joules

29/- The forbidden energy gap for silicon is

(a) 0.12 eV
(b) 1.12 eV
(c) 0.72 eV
(d) 1.12 eV

30/- The forbidden energy gap for germanium is

(a) 0.12 eV
(b) 0.32 eV
(c) 0.72 eV
(d) 0.92 eV

31/- Free electrons exist in

(a) First band

(b) Second band
(c) Third band
(d) Conduction band

32/- The forbidden energy gap between the valence band and conduction band will be least in case
of

(a) Metals
(b) Semi-conductors
(c) Insulators
(d) All of the above

33/- The forbidden energy gap between the valance band and conduction band will be wide in case
of

(a) Semi-conductors
(b) All metals
(c) Good conductors of electricity
(d) Insulators

34/- An insulator will conduct when the

(a) Voltage applied is more than the break down voltage

(b) Temperature is raised to very high level
(c) Elither a or b
(d) None of the above

35/- A semiconductor in its purest form is called

(a) Intrinsic semiconductor

(b) Extrinsic semiconductor
(c) P-type semiconductor
(d) N- type semiconductor

36/- At absolute zero temperature a semiconductor behaves like

(a) An insulator
(b) A superconductor
(c) A good conductor
(d) A variable conductor

37/- When atoms are held together by the sharing of valence electrons

(a) Each atom becomes free to move

(b) Neutrons start shifting
(c) They form a covalent bond
(d) Some of electrons are lost
38/- An electron in the conduction band

(a) Has higher energy than the electron in the valance bond
(b) Has lower energy than the electron in the valance bond
(c) Loses its charge easily
(d) Jumps to the top of the crystal

39/- When an electron breaks a covalent bond and moves away

(a) A hole is created

(b) A proton is also lost
(c) Atom becomes an ion
(d) Rest of the electrons move at a faster rate

40/- EG for silicon us 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that

(a) More number of electron hole pairs will be generated in silicon than in germanium at room
temperature
(b) Less number of electron hole pairs will be generated in silicon than in germanium at room
temperature
(c) Equal number of electron hole pairs will be generated in both at lower temperatures
(d) Equal number of electron hole pairs will be generated in both at higher temperatures

41/- EG for silicon us 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that

(a) The conductivity of silicon will be less than that of germanium at room temperature
(b) The conductivity of silicon will be more than that of germanium at room temperature
(c) The conductivity of two will be same at 6oC
(d) The conductivity of two will be same at 100oC

42/- The resistivity of a semiconductor

(a) Increases as the temperature increases

(b) Decreases as the temperature increases
(c) Remains constant even when the temperature varies
(d) None of the above

43/- Semiconductors have

(a) Zero temperature coefficients of resistance

(b) Positive temperature coefficient of resistance
(c) Negative temperature coefficients
(d) None of the above

44/- The process of deliberately adding impurity to a semiconductor material is called

(a) Impurification
(b) Pollution
(c) Deionisation
(d) Doping

45/- A doped semiconductor is called

(a) Impure semiconductors

(b) Dipole semiconductors
(c) Bipolar semiconductors
(d) Extrinsic semiconductors

46/- Before doping the semiconductor material is

(a) Dehydrated
(b) Heated
(c) Hardened
(d) Purified

47/- Which of the following is donor impurity element ?

(a) Aluminium
(b) Boron
(c) Phosphorous
(d) Indium

48/- Which of the following is acceptor impurity element ?

(a) Antimony
(b) Gallium
(c) Arsenic
(d) Phosphorous

49/- All of the following elements have five valence electrons EXCEPT

(a) Antimony
(b) Arsenic
(c) Gallium
(d) Phosphorous

50/- Which of the following elements has four variance electrons ?

(a) Arsenic
(b) Silicon
(c) Boron
(d) Indium
Solution Key :

1/- (a) 47/- (c)

2/- (b) 48/- (b)
3/- (d) 49/- (c)
4/- (c) 50/- (b)
5/- (c)
6/- (b)
7/- (d)
8/- (d)
9/- (c)
10/- (a)
11/- (b)
12/- (c)
13/- (a)
14/- (b)
15/- (d)
16/- (c)
17/- (a)
18/- (b)
19/- (d)
20/- (c)
21/- (d)
22/- (d)
23/- (c)
24/- (d)
25/- (a)
26/- (d)
27/- (c)
28/- (d)
29/- (b)
30/- (c)
31/- (d)
32/- (a)
33/- (d)
34/- (c)
35/- (a)
36/- (a)
37/- (c)
38/- (a)
39/- (a)
40/- (b)
41/- (a)
42/- (b)
43/- (c)
44/- (d)
45/- (d)
46/- (d)
END NOTE
Most of the people do acknowledgements in the beginning but we decided to do at the end so you
can only read if you are interested. I would like to start with Dr. Shaista Shehzada the person who
made me realise how amazing and interesting science can be.

Thank You Ahsan Latif for being my partner in crime in asking all those confusing questions to our
instructors in engineering. I have learned more from those few questions than the entire lecture
combined.

To Dr. Habib, Mam Amna, Dr. Saad and Air Commodore (R) Anwar Saeed for teaching me
electronics. It won’t be an overstatement to say that all I know about electronic devices and
electronics as a phenomenon in due to these people.

And lastly to Afnan Ansari and Zubair Afzal my colleagues my flatmates and my friends. For pushing
me in compiling and completing this piece.