Features: 4-Channel Integrated LCD Supply With Dual V Amplifiers
Features: 4-Channel Integrated LCD Supply With Dual V Amplifiers
E PRODUC
DATASHEET
RECOMM T
ENDED RE
PLACEME
ISL98602 NT PART
ISL97652 FN9287
4-Channel Integrated LCD Supply with Dual VCOM Amplifiers Rev 1.00
November 2, 2007
The dual charge pump controllers used for VON and VOFF • Thermally enhanced 7x7 QFN package
generation uses the full FOSC switching frequency to allow • Pb-free (RoHS compliant)
the use of small output components for board space
efficiency. VON is further processed through an integrated Applications
VON-SLICE circuit for reduced flicker.
• LCD-TVs (up to 40”)
The integrated amplifiers feature high slew-rate and high • Industrial/medical LCD displays
output current capability. They are permanently enabled
when AVIN is present. Pinout
Available in the 48 Ld 7mmx7mm QFN package, the ISL97652
ISL97652 is specified for ambient operation over the (48 LD QFN)
TOP VIEW
-40°C to +85°C temperature range.
47 OGND
48 NEG1
46 OUT2
44 NEG2
45 POS2
42 SWO
43 AVIN
38 SW2
37 SW1
Ordering Information
39 SWI
40 SUI
41 FB
TEMP.
PART NUMBER PART RANGE PACKAGE PKG. POS1 1 36 PGND3
(Note) MARKING (°C) (Pb-Free) DWG. # OUT1 2 35 PGND2
ISL97652IRZ ISL97652IRZ -40 to +85 48 Ld 7x7 QFN L48.7x7 VGL 3 34 PGND1
CE 4 33 EN1
ISL97652IRZ-T* ISL97652IRZ -40 to +85 48 Ld 7x7 QFN L48.7x7
VFLK 5 32 EN2
ISL97652IRZ-TK* ISL97652IRZ -40 to +85 48 Ld 7x7 QFN L48.7x7 VDPM 6 THERMAL 31 VC
PAD
*Please refer to TB347 for details on reel specifications. RE 7 30 SS
NOTE: These Intersil Pb-free plastic packaged products employ VGHM 8 29 DLY2
special Pb-free material sets; molding compounds/die attach materials VGH 9 28 FREQ
and 100% matte tin plate PLUS ANNEAL - e3 termination finish, which FBP 10 27 VDC
is RoHS compliant and compatible with both SnPb and Pb-free
GND 11 26 PVIN2
soldering operations. Intersil Pb-free products are MSL classified at Pb-
free peak reflow temperatures that meet or exceed the Pb-free DRVP 12 25 PVIN1
requirements of IPC/JEDEC J STD-020.
SUP 13
DRVN 14
AGND 15
FBN 16
REF 17
DLY1 18
SSB 19
VCB 20
FBB 21
CBOOT 22
SWB1 23
SWB2 24
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
2. For JC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications VIN = 12V, VBOOST = VSUP = 15V, VON = 25V, VOFF = -8V, over temperature from -40°C to +85°C, unless
otherwise stated.
SUPPLY PINS
Disabled 0.5 5 µA
Disabled 5 µA
FOSC Oscillator Frequency for Buck, Boost, VON FREQ = VIN 1100 1300 1500 kHz
and VOFF Functions
FREQ = GND 550 650 750 kHz
AVDD BOOST
IBOOST Boost Switch Peak Current Boost Peak Current limit 2.8 A
EFFBOOST Peak Efficiency See graphs and component 91 %
recommendations
Electrical Specifications VIN = 12V, VBOOST = VSUP = 15V, VON = 25V, VOFF = -8V, over temperature from -40°C to +85°C, unless
otherwise stated. (Continued)
FOSC = 1.3MHz 85 %
FOSC = 1.3MHz 20 %
SWILEAK SWI Leakage Current When Disabled VIN = 15V, SWI = 21V, SWO = 0V, 1 µA
EN1 = EN2 = 0V
VDSOK Drain Source Voltage When Boost is Enabled SWI =16.5V 15.7 V
VDSHYS Hysteresis on VDSOK Spec SWI =16.5V 1.4 V
VLOGIC BUCK
FOSC = 1.3MHz 85 %
FOSC = 1.3MHz 20 %
Electrical Specifications VIN = 12V, VBOOST = VSUP = 15V, VON = 25V, VOFF = -8V, over temperature from -40°C to +85°C, unless
otherwise stated. (Continued)
Ipd(DRVN)lim Pull-Down Current Limit in DRVN V(DRVN) = 0.36V to V(VSUP) -200 -60 mA
Rpd(FBN)off Pull-Down Resistance, Not Active I(FBN) = 500µA 2.5 3.5 4.5 k
Ipd(DRVP)lim Pull-Down Current Limit in DRVP V(DRVP) = 0.36V to V(VSUP) -200 -60 mA
I(DRVP)leak Leakage Current in DRVP VFBP > VREF or EN1 or EN2 = low -2 2 µA
LOGIC INPUTS
VON SLICE
VCOM AMPLIFIERS
Electrical Specifications VIN = 12V, VBOOST = VSUP = 15V, VON = 25V, VOFF = -8V, over temperature from -40°C to +85°C, unless
otherwise stated. (Continued)
Vth_AVDD(FB) AVDD Boost Short Detection V(FBFBB) falling less than 1.14 V
Vth_VLOGIC(FB VLOGIC Buck Short Detection V(FBB) falling less than 1.14 V
B)
Vth_POUT(FBP) POUT Charge Pump Short Detection V(FBP) falling less than 1.14 V
Vth_NOUT(FBN) NOUT Charge Pump Short Detection V(FBN) rising more than 0.525 V
START-UP SEQUENCING
95 90
90 85
EFFICIENCY (%)
EFFICIENCY (%)
80 8V VIN TO 14V VOUT
85 13V VIN TO 14V VOUT
75 13V VIN TO 14V VOUT
80 8V VIN TO 14V VOUT 12V VIN TO 14V VOUT
70
75 12V VIN TO 14V VOUT
65
70
60
65 55
60 50
0 500 1000 1500 2000 0 500 1000 1500
IOUT (mA) IOUT (mA)
0.20 0.20
0.10
0.10
0.05
0.05
0.00
0.00
-0.05
13V VIN TO 14V VOUT 13V VIN TO 14V VOUT
-0.10 -0.05
8V VIN TO 14V VOUT 12V VIN TO 14V VOUT
-0.15 -0.10
0 500 1000 1500 2000 0 500 1000 1500 2000
IOUT (mA) IOUT (mA)
FIGURE 3. BOOST LOAD REGULATION @ 650kHz FIGURE 4. BOOST LOAD REGULATION @ 1.3MHz
0.09
0.08 CH3 = IOUT
BOOST LINE REGULATION (%)
0.07
0.06
0.05
0.04
0.03 fs = 1.3MHz
0.02 fs = 650kHz
100
90
CH3 = IOUT
80 8V VIN TO 3.3V VOUT
90 0
80
-0.1
75
12V VIN TO 3.3V VOUT 8V VIN TO 3.3V VOUT -0.15
70
-0.2
65 12V VIN TO 3.3V VOUT
-0.25
60
50 -0.35
0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500
IOUT (mA) IOUT (mA)
FIGURE 9. BUCK EFFICIENCY @ 1.3MHz FIGURE 10. BUCK LOAD REGULATION @ 650kHz
-0.15
-0.2
12V VIN TO 3.3V VOUT
-0.25
-0.3
FIGURE 13. BUCK TRANSIENT RESPONSE @ 1.3MHz FIGURE 14. VON LOAD REGULATION
0.2
0.1
0.05
-0.05
CH4 = Vgh_M
-0.1
-0.15
-0.2
0 5 10 15 20 25 30 35
IOUT (mA)
INPUT SIGNAL
OUTPUT SIGNAL
Pin Descriptions
PIN NUMBER PIN NAME DESCRIPTION
1 POS1 Op-amp 1 non-inverting input
2 OUT1 Op-amp 1 output
3 VGL GPM lower supply pin
4 CE GPM delay pin
5 VFLK GPM control pin
6 VDPM GPM enable pin
7 RE GPM output voltage slope adjust pin
8 VGHM GPM output voltage
9 VGH GPM higher supply pin
10 FBP Positive charge pump feedback voltage
11 GND Positive and negative charge pump Ground connection
12 DRVP Positive charge pump driver output pin
13 SUP Positive and negative charge pump supply
14 DRVN Negative charge pump driver output pin
15 AGND Device analog Ground
16 FBN Negative charge pump feedback voltage
17 REF Reference voltage for all internal functions and external VOFF feedback
18 DLY1 Buck and negative charge pump delay pin
19 SSB Buck soft-start pin
20 VCB Buck compensation pin
21 FBB Buck feedback voltage
22 CBOOT Buck boot-strap capacitor
23, 24 SWB1, SWB2 Buck FET source connection
25, 26 PVIN1, PVIN2 Input supply
27 VDC Internal regulated 5V supply - attach external decoupling capacitor
28 FREQ Switching frequency select pin
29 DLY2 Boost and positive charge pump delay pin
30 SS Boost soft-start pin
31 VC Boost compensation pin
32 EN2 Boost and positive charge pump enable
33 EN1 Buck and negative charge pump enable
34 PGND1 Device power GND
35, 36 PGND2, PGND3 Boost FET source connection
37, 38 SW1, SW2 Boost FET drain connection
39 SWI AVDD delay switch source connection
40 SUI AVDD start-up in-rush control
41 FB Boost feedback voltage
42 SWO AVDD delay switch drain connection
43 AVIN VCOM amplifier positive supply pin
44 NEG2 Op-amp 2 inverting input
45 POS2 Op-amp 2 non-inverting input
46 OUT2 Op-amp 2 output
47 OGND Op-amp ground
48 NEG1 Op-amp 1 inverting input
Block Diagram
SSB VCB FBB FB VC FREQ SS
CBOOT
SW1
- - F/F
+ + SW2
PVIN1 REF OSC S
F/F Q
PVIN2 -
S OSC R
SLOPE
+
Q COMPENSATION
+
-
R -
+ BOOST CONVERTER PGND2
SWB1 PGND3
FOSC
SUI
SWB2
BUCK CONVERTER
SWI
GATE
CONTROL
PGND1 SWO
POS1 + + POS2
NEG1 - - NEG2
OGND
OUT2
OUT1
DLY1
BIAS AND EN1
DLY2 SEQUENCE
EN2
CONTROL
REF
SUP
VOFF
CHARGE
FOSC DRVN
5V PUMP
PVIN2 CONTROL
REGULATOR GND
+ 0.5V
VDC - FBN
SUP
RE
VON
VON
CE CHARGE
DRVP
SLICE CIRCUIT FOSC PUMP
VDPM CONTROL
+ 1.265V
- FBP
NEG1
R10 COMMON
100k OUT1 RE
BACK-PLANE
VGHM GATE DRIVER
POS2 SUPPLY RE
VON 10k
NEG2 VGH
COMMON
BACK-PLANE OUT2 R7 CON
C4* 232k
AVDD AVIN 4.7µF
CAVIN
FBP
0.1µF 470nF CBOOT
PGND3 R8
TCON BIAS L2 CB SWB1 C5*
C21 PGND2 10k
SWB2 PGND1 D7
6.8µH
D5 CP D6
CB R11
2x10µF * 340 DRVP
0.1µF
AVDD
FBB VFLK
C22 SSB VDPM
EN2
* R12
200
CSSB VCB
0.1µF VDC GND OGND AGND EN1
RCB
10k
CDC
4.7nF CCB 4.7µF
*Optional components.
NOTE: Separate PGND and SGND planes must be used, see PCB layout procedure section.
The boost converter uses a summing amplifier architecture option is selected. The minimum boost duty cycle of the
consisting of gm stages for voltage feedback, current feedback ISL97652 is ~10% for 650kHz and ~20% for 1.3MHz. When
and slope compensation. A comparator looks at the peak the operating duty cycle is lower than the minimum duty cycle,
inductor current cycle by cycle and terminates the PWM cycle the part will not switch in some cycles randomly, which will
if the current limit is reached. cause some LX pulses to be skipped. In this cas, LX pulses are
not consistent any more, but the output voltage (AVDD) is still
An external resistor divider is required to divide the output
regulated by the ratio of R1 and R2. Because some LX pulses
voltage down to the nominal reference voltage. Current drawn
are skipped, the ripple current in the inductor will become
by the resistor network should be limited to maintain the overall
bigger. Under the worst case, the ripple current will be from 0
converter efficiency. The maximum value of the resistor
to the threshold of the current limit. In turn, the bigger ripple
network is limited by the feedback input bias current and the
current will increase the output voltage ripple. Hence, it will
potential for noise being coupled into the feedback pin. A
need more output capacitors to keep the output ripple at the
resistor network in the order of 60k is recommended. The
same level. When the input voltage equals, or is larger than,
boost converter output voltage is determined by the following
the output voltage, the boost converter will stop switching. The
equation:
boost converter is not regulated any more, but the part will still
R1 + R2 be on and other channels are still regulated.
V BOOST = --------------------- V FB (EQ. 2)
R2
Boost Converter Input Capacitor
The current through the MOSFET is limited to 2.8Apeak. This An input capacitor is used to suppress the voltage ripple
restricts the maximum output current (average) based on the injected into the boost converter. A ceramic capacitor with
following equation: capacitance larger than 10µF is recommended. The voltage
I L V IN rating of input capacitor should be larger than the maximum
I OMAX = I LMT – -------- --------- (EQ. 3)
input voltage. Some capacitors are recommended in Table 2
2 VO
for input capacitor.
Where IL is peak to peak inductor ripple current, and is set by:
TABLE 2. BOOST CONVERTER INPUT CAPACITOR
V IN D RECOMMENDATION
I L = --------- ----- (EQ. 4)
L fS
CAPACITOR SIZE VENDOR PART NUMBER
where fs is the switching frequency 10µF/25V 1210 TDK C3225X7R1E106M
The following table gives typical values (margins are 10µF/25V 1210 Murata GRM32DR61E106K
considered 10%, 3%, 20%, 10% and 15% on VIN, VO, L, fS
and IOMAX):
Boost Inductor
TABLE 1. MAXIMUM OUTPUT CURRENT CALCULATION The boost inductor is a critical part which influences the output
VIN (V) VO (V) L (µH) fs (MHz) IOMAX (mA) voltage ripple, transient response, and efficiency. Values of
3.3µH to 10µH should be selected to match the internal slope
12 15 6.8 0.65 1890
compensation. The inductor must be able to handle the
12 15 6.8 1.3 1955 following average and peak current:
12 18 6.8 0.65 1500 IO (EQ. 5)
I LAVG = -------------
12 18 6.8 1.3 1590 1–D
DIMENSIONS
When operating at the lower frequency option, 650kHz, the INDUCTOR (mm) VENDOR PART NUMBER
potential increase in ripple current in the inductor can be 6.8µH/ 7.3x6.8x3.2 TDK RLF7030T-6R8N3R0
avoided by increasing the inductor by the same factor. This 3APEAK
allows the slope compensation in the boost feedback to remain 6.8µH/ 7.6X7.6X3.0 Sumida CDR7D28MNNP-6R8NC
the same as the 1.3MHz case and this will maintain stability of 2.9APEAK
the converter over the widest operating range. Operation at
5.2µH/ 10x10.1x3.8 Cooper CD1-5R2
650kHz allows boost operation down to lower minimum duty 4.55APEAK Bussmann
cycles, where the output voltage required is closer to the input
voltage than can be achieved when the higher frequency
Rectifier Diode (Boost Converter) ringing observed when the load current changes. Reduce
A high-speed diode is necessary due to the high switching excessive ringing by reducing the value of the resistor in series
frequency. Schottky diodes are recommended because of their with the VC pin capacitor.
fast recovery time and low forward voltage. The reverse AVDD Delay Switch
voltage rating of this diode should be higher than the maximum
The ISL97652 integrates a PMOS disconnect switch for the
output voltage. The rectifier diode must meet the output current
AVDD boost output to disconnect VIN from AVDD when the EN2
and peak inductor current requirements. The following table is
input is not selected. When EN2 is taken high, the PMOS FET
some recommendations for boost converter diode.
is turned on to connect power to the display. The CSUI
TABLE 4. BOOST CONVERTER RECTIFIER DIODE capacitor provide soft-start control for the connection of this
RECOMMENDATION switch.
VR/IAVG
The operation of the AVDD delay switch is controlled by
DIODE RATING PACKAGE VENDOR
internal VDSOK and VDSHYS control signals which operate as
SS23 30V/2A SMB Fairchild Semiconductor follows:
SL23 30V/2A SMB Vishay Semiconductor During start-up (or during fault conditions):
VDSOK goes to 1 when V(SWI - SWO) becomes less than
Output Capacitor ~0.5V. This will turn-on the boost function.
The output capacitor supplies the load directly and reduces the VDSOK goes to 0 when VDS_pfet becomes greater than
ripple voltage at the output. Output ripple voltage consists of two ~1.1V. This will turn-off the boost function.
components: the voltage drop due to the inductor ripple current
The threshold voltages have a Vin dependence such that:
flowing through the ESR of output capacitor, and the charging
and discharging of the output capacitor. For Vin1 = 8V: VDSOK goes to 1 occurs at ~0.5V and VDSOK
goes to 0 occurs at ~1.1V.
V O – V IN IO 1 (EQ. 7)
V RIPPLE = I LPK ESR + ------------------------ -------------------- ---- For Vin1 =18.5V: VDSOK goes to1 occurs at ~1.13V and
V O C AVDD f s VDSOK goes to 0 occurs at ~2.65V.
For low ESR ceramic capacitors, the output ripple is dominated V(SWI - SWO) is the VDS voltage across the internal PFET
by the charging and discharging of the output capacitor. The protection switch. If this voltage exceeds 1.1V for some reason
voltage rating of the output capacitor should be greater than (e.g. under fault conditions or during start-up if VMAIN rises
the maximum output voltage. faster than AVDD) the boost is turned-off to allow the AVDD
(SWO) potential to catch-up with VMAIN (SWI).
Note: Capacitors have a voltage coefficient that makes their
VDSHYS is the VDS hysteresis level;
effective capacitance drop as the voltage across then
increases. COUT in Equation 7 above assumes the effective Once VDSOK goes to 1 the voltage V(SWI - SWO) then needs
value of the capacitor at a particular voltage and not the to exceed 1.1V for VDSOK goes to 0.
manufacturer's stated value, measured at zero volts. During normal operation VDS will be ~Ron_PFET * Iload
(~ 0.18x2 = 0.36V for max AVDD load).
The following table shows some selections of output
If a fault develops on AVDD, which causes VDS to exceed
capacitors.
1.1V, then the boost operation is interrupted by the internal
TABLE 5. BOOST OUTPUT CAPACITOR RECOMMENDATION VDSOK goes to 0 signal and fault timers will start to operate
CAPACITOR SIZE VENDOR PART NUMBER while the rising/falling character of AVDD is monitored.
10µF/25V 1210 TDK C3225X7R1E106M AVDD Delay Switch Fault Operation
10µF/25V 1210 Murata GRM32DR61E106K When enabled, the gate of the PFET is pulled down with a
30µA current, turning on the FET switch. The speed of this
Loop Compensation (Boost Converter) turn-on can be controlled by placing a capacitor from SWI to
The boost converter of ISL97652 can be compensated by a SUI. In normal operation the gate (and SUI pin) are pulled
RC network connected from VC pin to ground. CC = 4.7nF and down to 5V below SWI. The AVDD delay switch circuitry
RC = 10k RC network is used in the demo board. A higher constantly monitors both the current in the switch and the
resistor value can be used to lower the transient load change voltage at SWO. If the current exceeds the current limit of 2A,
AVDD overshoot - however, this may be at the expense of the gate of the FET (and also the SUI pin) will be pulled up to
stability to the loop. the correct level to limit the current to 2A. In this mode the
switch acts like a 2A current source. this current cannot be
The stability can be examined by repeatedly changing the load maintained indefinitely due to the power dissipation on chip.
between 100mA and a max level that is likely to be used in the Therefore, three separate fault mechanisms are operated.
system being used. The AVDD voltage should be examined
with an oscilloscope set to AC 100mV/div and the amount of
the maximum input voltage. The peak current rating is 2A, and the Regulated Charge Pump Controllers (VON and VOFF)
average current should be as the following equation, The ISL97652 includes 2 independent charge pumps (see
I AVG = 1 – D *I o (EQ. 13) charge pump block and connection diagram). The negative
charge pump inverters the VSUP voltage and provides a
Where Io is the output current of buck converter. The following regulated negative output voltage. The positive charge pump
table shows some diode recommended. doubles or triples the VSUP voltage and provided a regulated
positive output voltage. The regulation of both the negative and
TABLE 8. BUCK RECTIFIER DIODE RECOMMENDATION
positive charge pumps is generated by internal comparator
VR/IAVG that senses the output voltage and compares it with the
DIODE RATING PACKAGE VENDOR
internal reference.
PMEG2020EJ 20V/2A SOD323F Philips
Semiconductors The pumps use pulse width modulation to adjust the pump
SS22 20V/2A SMB Fairchild period, depending on the load present. The pumps can provide
Semiconductor 30mA for VOFF and 20mA for VON.
If the load is too light, the on-time of the low side diode may
be insufficient to replenish the bootstrap capacitor voltage. In
this case, if VIN-VBUCK <1.5V, the internal MOSFET pull-up
device may be unable to turn-on until VLOGIC falls. Hence,
there is a minimum load requirement in this case. The
minimum load can be adjusted by the feedback resistors
to FBB.
C4
VDC VSUP 100pF
A2
FAULT
C5 R8
1.14V 2.2nF 10k
FBP
A1 R7
1.265V 232k
FOSC
STOP
M2 VSUP
CLK CP
D6 D7
0.1µF
DRVP
VON (30V)
CON
1µF
PWM
EN CONTROL M1
GND
VSUP
CP
D6 D7 D6’ D7’
0.1µF
DRVP VON (30V)
CON
1µF CON’
CP’
1µF
0.1µF
In voltage doubler configuration, the maximum VON is as given by the following equation:
V ON_MAX(2x) = 2 V SUP – V DIODE – 2 I OUT R ONH + R ONL
(EQ. 15)
For Voltage Tripler using additional external diodes and capacitors (Figure 18B):
VON_MAX(3x) = 3 V SUP – 4 V DIODE – 2 I OUT R ONH + RONL (EQ. 16)
VREF C3
VDC VSUP 100pF
A2
FAULT
C2 R5
0.53V 820pF 40.2k
FBN
A1 R6
0.5V 453k
FOSC
STOP
M2
CLK CN
0.1µF D4
DRVN
VOFF (-8V)
D3 COFF
1µF
PWM
EN CONTROL M1
GND
The maximum VOFF output voltage of a single stage charge pump is:
V OFF_MAX 2x = – V SUP + V DIODE + 2 I OUT R ON NOUT H + R ON NOUT L (EQ. 18)
R5 and R6 in the Typical Application Diagram determine VOFF Vmain (without the boost running) is large enough to satisfy the
output voltage. regulated VOFF supply.
R6 R6
V OFF = V FBN 1 + -------- – V REF -------- (EQ. 19) Improving Charge Pump Noise Immunity
R5 R5
Depending on PCB layout and environment, noise pick-up at
Charge Pump Supply the FBP and FBN inputs, which may degrade load regulation
The magnitude of the SUP supply will determine the charge performance, can be reduced by the inclusion of capacitors
pump diode configuration; whether x2 or x3 for the positive across the feedback resistors (e.g. in the Application Diagram,
charge pump or x1 or x2 for the negative charge pump. C4 and C5 for the positive charge pump).
Set R7 • C4 = R8 • C5 with C4 ~ 100pF.
An independent charge pump supply pin 13 (SUP) is provided
and this may be connected to Vin, Vmain, AVDD or some other VON-SLICE Circuit Operation
suitable supply. The Von slice circuit functions as a three way multiplexer,
switching VGHM between ground, VGL and VGH (typ 15-30V).
Note that if AVDD is chosen for the SUP supply, then a
Voltage selection is provided by digital inputs VDPM (enable)
potential fault-like interaction with the supply sequencing and
and VFLK (control). HIGH to LOW delay and slew control is
fault checking is present; when EN1 goes high (with EN2 low),
provided by external components on pins CE and RE
fault checking on the VOFF charge pump is started by the
respectively. The block diagram of the VON-SLICE circuit is
voltage ramp on DEL1. If this pin reaches ~1.9V before VOFF
shown in Figure 3.
is within 90% of it's regulation voltage then the buck converter
(Tcon bias) and Voff will be continually re-started. This When VDPM is LOW, the block is disabled and VGHM is
condition will arise if the SUP supply has not been activated by grounded.
EN2 going high before DEL1 has reached 1.9V. One solution
When VDPM is HIGH, VGHM is determined by VFLK; when
would be to increase the capacitance on DEL1 to overlap
VFLK goes LOW, there is a delay controlled by the capacitor
enough in time with the EN2 going high. This does have the
attached to the CE pin, following which VGHM is driven to
disadvantage of lengthening the fault detection time of the
VGL, with a slew rate controlled by the resistor attached to the
VOFF charge pump under true fault conditions and it also
RE pin. Note that VGL is used only as a reference voltage for
lengthens the initial VOFF turn-on time. Another solution would
an amplifier, thus does not have to source or sink a significant
be to supply SUP from Vmain as long as the magnitude of
DC current. When VFLK goes HIGH, VGHM is driven HIGH at
a rate primarily controlled by the P1 switch resistance capacitor to VREF. This creates a delay, equal to CE*21300.
(RONVGH) and the external capacitive load. For example, the delay time is ~10µs for 470pF CE capacitor.
At this point, VGHM begins to slew down from VGH to VGL.
VGHM HIGH to LOW transitions are more complex; take the
The slew current is equal to Isl = 300/(RE+5k), and the dv/dt
case where the block is already enabled (VDPM is HIGH).
slew rate is Isl/Cload.
When VFLK is HIGH, pin CE is grounded. On the falling edge
of VFLK, a current is passed into pin CE to charge an external where Cload is the load capacitance applied to VGHM.
VGH
VGHM
VDPM
VGL VGL
x248
x248
VREF
RE
60µA
CE
CONTROL
VFLK AND TIMING
VGH
VGHM
SLOPE CONTROLLED
VGL BY RE AND LOAD
CAPACITANCE
0 t
VFLK
0 t
CE
~1.265V
0 t
High Performance VCOM Amplifiers reached, the negative charge pump will begin. Removing the
The integrated high performance amplifiers are designed to DLY1 capacitor will cause the negative charge pump to start
drive the VCOM plane in TFT-LCD displays. Under normal immediately once the buck regulator reaches 90% of the target
operational conditions, the amplifiers are permanently enabled value. The delay time and soft-start times are determined using
when the AVIN supply is present. Under fault conditions and the following equations:
with EN1 active, the temperature shut-down (TOFF exceeded) V DL1
T DLY1 = C DL1 -------------- (EQ. 20)
will disable the amplifiers until the temperature drops to TON. I DL1
Temperature shut-down of the amplifiers is disabled if EN1 is
V SSB
disabled. T SSB = C SSB --------------- (EQ. 21)
I SSB
The amplifiers integrated in to the ISL97652 feature high
output current of 50mA minimum and high slew rate of 50V/µs. The EN2 pin is used to control the boost and positive charge
Both inputs and outputs have rail-to-rail capability. pump circuits.Note that EN2 is ignored until the buck converter
Start-Up Sequence Control has reached 90% of it's target value. When taken high, the
internal PFET is turned on to connect the input to the AVDD
The ISL97652 features extensive start-up sequence control
output. A capacitor connected to SUI provides control over the
options. Two enable pins and two delay control pins are used
soft connect to limit inrush current. Next, the boost converter
to set the start-up sequence.
starts to operate. The soft-start time for the boost is set using
The EN1 enable pin controls the buck regulator and negative the capacitor tied to the SS pin. Once the output reaches 90%
charge pump controller. When EN1 goes H, the internal 5.3V of the target value, the DLY2 timer starts. Once completed, the
regulator starts up. Once the regulator output on pin 27 (VDC) positive VON charge pump starts to operate. If CDL2 is not
exceeds it's UVLO threshold, the REF pin starts to charge up present, the VON charge pump will start immediately once the
to the normal output level. Once REF is within 15% of it's final boost is in regulation. The delay time is determined using the
value, the buck regulator will start to operate. Note that if VREF following equation:
moves more than 15% from it's target value, all major functions V DL2
will be disabled until REF returns to it's normal range. This T DLY2 = C DL2 -------------- (EQ. 22)
I DL2
involves the chip going through the normal start-up sequence
from buck start-up onwards, depending on the state of the V SS
enable signals EN1, EN2. The soft-start time is set using the T SS = C SS ----------- (EQ. 23)
I SS
capacitor connected to SSB. Once the output reaches 90% the
DLY1 capacitor begins to charge. Once the threshold is
Variations on the start-up sequence can be seen in Figures 22, The Gate pulse modulator is enabled when both of the
23 and 24. following conditions are met:
• VDPM is H
• VON is over 90% of it's target value.
TSSB DLY2
EN1
DLY1
EN2
VTCON
TSS
VOFF
VIN - DIODE
AVDD
TSSB
DLY2
EN1
DLY1
EN2
TSS
VTCON
VOFF
VIN - DIODE
VMAIN
VMAIN - 2 x DIODE
VIN - 2 x DIODE
VON
VIN - DIODE
AVDD
EN2
DLY2
VDPM
VIN - DIODE
VON
AVDD
VFLK
VGHM
example, SSB controls step-down regulator fault checking, SW1,2 [a single wide track] to L1/D1, SWB1,2 [a single wide
DEL1 controls VOFF fault checking, SS controls step-up track] to L2/D5.)
regulator and PFET fault checking, DEL2 controls VON and
Reserve the bottom (or an intermediate layer) for the signal
GPM fault checking. If a fault on any of the major blocks is
ground plane (SGND) and signal routing. It is recommended
detected continuously for a predetermined time interval
that all feedback inputs and any other sensitive tracks are
(currently set to 63µs), when fault checking is enabled for that
routed to the SGND layer using a VIAs as close to the chip as
function, the fault latch will be set. This causes all major
possible. This prevents unwanted interference pick-up and
functions to be disabled immediately, including the 5.3V
allows the supply smoothing capacitors to be places as close
regulator. Once VDC falls below its internal UVLO limit
to the chip as possible.
(typically 3.6V), the FAULT latch is reset. This will initiate an
automatic restart. If the fault has been cleared, the restart will (Route the following tracks on the SGND (bottom or
be successful; if the fault persists, the FAULT latch will again intermediate) metal layer: FB, FBB, FBP, FBN, POS1,2, )
be set, and the cycle will repeat itself.
Star Ground
Buck, boost and VON circuits have fault thresholds at 90% of A star ground system is where a number of different grounds
target values. (e.g. PGND, SGND) come together at a single location which
The VOFF fault threshold is set at 125mV above the 0.5V then becomes the reference ground point for the system as a
regulation point. whole. Star grounding ensures minimum interference between
different functions in a system.
GPM fault detection is designed to detect a short circuit on the
output, by monitoring whether VGHM fails to pull up to VGH on Practically, it is difficult to achieve an ideal (single location)
two consecutive FOSC clock periods. ground point due to the physical dimensions of the chip,
smoothing capacitors and track routing, however, the exposed
The AVDD PFET also has fault checking, which will protect the die plate and the area immediately next to the PGND1,2,3 pins
FET in the event of an output short circuit. is defined as the star ground for this chip.
Note that the VCOM amplifiers are independently biased, and The negative smoothing capacitor terminals of: Cout, CB and
are enabled at all times, except if an over-temperature fault is CIN must be located as close as possible to the PGND1,2,3
detected. If this behavior is not desired, then there is an option pins. The smoothing capacitors for VIN, Cout and CB come as
to power the VCOM amplifiers from AVDD, which will keep them a block of three or four capacitors with (usually) one small
disabled until the boost is enabled. capacitor whose role is to reduce the total effective ESR of the
Note also that it is possible to prevent timed fault checking on capacitors. It is recommended that the small capacitor and at
any or all of the major functions, simply by externally clamping least one of the large capacitors from each capacitor block is
SSB, SS, DEL1 and/or DEL2 to a voltage between 1.3V and placed as physically close to the chip PGND pins as possible.
2V. The other capacitors from each block can be placed a little
further away, if necessary.
PCB Layout Procedure
Exposed Die plate connection
To ensure the user gets the best chip performance with
minimum amount of PCB rework in the development phase, The exposed die plate connection to the underside of the chip
the following PCB layout procedure is strongly recommended. must directly connect the PGNDs (pins 34, 35, 36) and AGND
(pin 15) with an equivalent area of metal. The other ground
PCB metal layers pins (amplifier OGND and charge pump GND pins may also be
Reserve the top PCB metal layer for direct power ground connected to the die plate.
(PGND) connections to the supply pins and switching outputs
The exposed die plate connection must have multiple VIAs
(buck/boost/charge-pumps). The goal is to ensure there are no
(use a 4x4 array) connecting the top metal PGND layer to the
VIAS in the boost and buck paths to the smoothing capacitors.
bottom SGND metal layer. The bottom SGND metal area
The top layer may also be used for general routing of non-
around the VIA array should be maximized in order to keep the
sensitive tracks as long as this does not compromise the
thermal resistance of the chip and PCB system as low as
supply track widths which should be as wide as possible.
possible. This will optimise operation at high currents or in high
Note that using VIAs in series with smoothing capacitors (even ambient temperature applications.
if implemented as multiply parallel VIAs) increases the effective
Order of component placement
high frequency ESR of the capacitors and WILL cause
degraded system operation. The order of component placement should be as follows. This
procedure minimizes the high current PGND and supply track
(Route the following tracks on the PGND (top) metal layer: impedance to the chip pins.
PGND1,2,3 [a single wide track] to CIN, Cout and CB, D5.
2). L1, D1, L2, D5: get these components as close to the
chip pins as possible (having observed 1/) and use wide
tracks on the top PGND layer with no vias.
Evaluation PCB
A two layer evaluation PCB is available which follows the
above procedure and may be useful as a reference to guide
the PCB layout engineer. For example, the smoothing
capacitor positive rail to PVin does contain vias in series;
however, a small capacitor has been used directly at the
PVin pins which overcomes the ESR objection.
4X 5.5
7.00 A
B 44X 0.50 6
37 48 PIN #1 INDEX AREA
6
PIN 1 36 1
INDEX AREA
7.00
4. 30 ± 0 . 15
25 12
(4X) 0.15
24 13
0.10 M C A B
TOP VIEW 48X 0 . 40± 0 . 1
4 0.23 +0.07 / -0.05
BOTTOM VIEW
0.10 C C
0 . 90 ± 0 . 1 BASE PLANE
( 6 . 80 TYP )
SEATING PLANE
0.08 C
( 4 . 30 ) SIDE VIEW
( 44X 0 . 5 )
C 0 . 2 REF 5
( 48X 0 . 23 )
( 48X 0 . 60 ) 0 . 00 MIN.
0 . 05 MAX.
TYPICAL RECOMMENDED LAND PATTERN
DETAIL "X"
NOTES: