Electronics and Experimental Methods PDF
Electronics and Experimental Methods PDF
Ayyappn J
Assitance Professor in Physics
Government College of Engineering
Sengipatti, Tanjavur-613 402
1. Consider the digital circuit shown below in which the input C is always high (I)
(a) (b)
The truth table for the circuit can be written as in (b). The entries in the Z column (vertically)
are [June-2011, 3.5m]
1. 1010 2. 0100
3. 1111 4. 1011
2. A time varying signal Vin is fed to an op-amp circuit with output signal V0 as show in the figure
below.
1. High pass filter with cutoff frequency 60Hz 2. High pass filter with cutoff frequency 100Hz
3. Low pass filter with cutoff frequency 16Hz 4. Low pass filter with cutoff frequency 100Hz
3. In the operational amplifier circuit below, the voltage at point A is [Dec-2011, 3.5m]
1
1. 1.0V 2. 0.5V
3. 0V 4. −5.0V
If the counter is initialized as A0 A1 A2 A3 = 0110, the state after the next clock pulse is [Dec-2011,
3.5]
1. 1000 2. 0001
3. 0011 4. 1100
5. The pins 0, 1, 2 and 3 of part A of a microcontroller are connected with resistors to drive an LED
at various intensities as shown in the figure
For Vcc = 4.2V and a voltage drop of 1.2V across the LED, the range (maximum current) and
resolution (Step size) of the drive current are, respectively [Dec-2011, 3.5m]
1. 7.0mA 2. 7.5mA
3. 5.0mA 4. 10.5mA
8. The figure below shows a voltage regulator utilizing a Zener diode of breakdown voltage 5V and
a positive triangular wave input of amplitude 10V
For Vi > 5V, the Zener regulates the output voltage by channeling the excess current through it
self. Which of the following waveforms shows the current i passing through the Zener diode ?
[Dec-2011, 5m]
(c) (d)
(e) (f)
9. Monochromatic light of wavelength 600nm and intensity 100mW/cm2 falls on a solar cell of area
30cm2 . The conversion efficiency of the solar cell is 10%. If each converted photon results in
an electron-hole pair, what is the maximum circuit current supplied by the solar cell? (Take
h = 6.6 × 10−34 J − s, c = 3 × 108 m/s and e = 1.6 × 10−19 C) [Dec-2011, 5m]
3. 1600mA 4. 3200mA
10. In the op-amp circuit shown in the figure below, the input voltage Vi is 1V. The value of the
output V0 is [June-2012, 3.5m]
1. −0.33V 2. −0.50V
3. −1.00V 4. −0.25V
11. An LED operates at 1.5V and 5mA in forward bias. Assuming an 80% external efficiency of the
LED, how many photons are emitted per second? [June-2012, 3.5m]
12. The transistor in the given circuit has hf e = 35Ω and hie = 1000Ω. If the load resistance RL = 1000Ω,
the voltage and current gain are, respectively. [June-2012, 3.5m]
13. The experimentally measured transmission spectra of metal, insulator and semiconductor thin
flims are shown in the figure. It can be inferred that I, II and III correspond respectively, to
[June-2012, 3.5m]
1. 1,0 2. 0,1
3. 0,0 4. 1,1
15. A resistance strain gauge is fastened to a steel fixture and subjected to a stress of 1000kg/m2 . If
the gauge factor is 3 and the modulus of elasticity of steel is 2 × 1010 kg/m2 , then the fractional
change in resistance of the strain gauge due to the applied stress is:(Note: The gauge factor
is defined as the ratio of the fractional change in resistance to the fractional change in length)
[June-2012, 5m]
16. Consider a sinusoidal waveform of amplitude 1V and frequency f0 . Starting from an arbitrary
initial time, the waveform is sampled at intervals of 1/(2f0 ). If the corresponding Fourier spectrum
peaks at a frequency f¯ and an amplitude Ā, then [June-2012, 5m]
f0 1
3. f¯ = 0 and Ā = 1V 4. f¯ = and Ā = √ V
2 2
18. In the op-amp circuit shown in the figure, Vi is a sinusoidal input signal of frequency 10Hz and
V0 is the output signal
The magnitude of the gain and the phase shift, respectively, close to the values [Dec-2012, 3.5m]
√ √
1. 5 2 and π/2 2. 5 2 and −π/2
1. y = A.B 2. y = A.B
3. y = A.B 4. y = A + B
20. A diode D as shown in the circuit has an i − v relation that can be approximated by
2
vD + 2vD , for vD > 0
iD =
0, for vD ≤ 0.
3. 5V 4. 2V
21. A magnetic field sensor based on the Hall effect is to be fabricated by implanting As into a Si
flim of thickness 1µm. The specifications require a magnetic field sensitivity of 500mV /T esla at an
excitation current of 1mA. The implantation dose is to be adjusted such that the average carrier
density, after activation, is [Dec-2012, 5m]
22. Band-pass and band-reject filters can be implemented by combining a low pass and a high pass
filter in series and in parallel, respectively. If the cut-off frequencies of the low pass and high
pass filters are ω0HP and ω0LP , respectively, the condition required to implement the band-pass
and band-reject filters are, respectively, [Dec-2012, 5m]
1. ω0HP < ω0LP and ω0HP < ω0LP 2. ω0HP < ω0LP and ω0HP > ω0LP
3. ω0HP > ω0LP and ω0HP < ω0LP 4. ω0HP > ω0LP and ω0HP > ω0LP
23. The output characteristics of a solar panel at a certain level of irradiance is shown in the figure
below
1. 97W 2. 73W
3. 50W 4. 45W
24. A silicon transistor with built-in voltage 0.7V is used in the circuit shown, with VBB = 9.7V,
RB = 300kΩ, VCC = 12V and RC = 2kΩ. Which of the following figures correctly represents the
load line and the quiescent Q point? [June-2013, 3.5m]
RC
RB
VBB VCC
iC iC
IB IB
(µA) (mA)
32 35µA 6 35µA
32µA 32µA
30µA 30µA
Q Q
0 0
9.7 VCE (V ) 12 VCE (V )
1. 2.
iC iC
IB IB
(mA) (µA)
6 35µA 32 35µA
Q
Q 32µA 32µA
30µA 30µA
0 0
12 VCE (V ) 9.7 VCE (V )
3. 4.
25. If the analog input to an 8−bit successive approximation ADC is increased from 1.0V to 2.0V, then
the conversion time will [June-2013, 3.5m]
1. 109 Ω 2. 108 Ω
3. 107 Ω 4. 106 Ω
27. The input to a lock-in amplifier has the form Vi (t) = Vi sin (ωt + θi ) where Vi , ω, θi are the amplitude,
frequency and phase of the input signal respectively. This signal is multiplied by a reference signal
of the same frequency ω, amplitude Vr and phase θr . If the multiplied signal is fed to a low pass
filter of cut-off frequency ω, then the final output signal is [June-2013, 5m]
1 1
1. Vi Vr cos (θi − θr ) 2. Vi Vr cos (θi − θr ) − cos ωt + θi + θr
2 2
1
3. Vi Vr sin (θi − θr ) 4. Vi Vr cos (θi − θr ) + cos ωt + θi + θr
2
28. Four digital outputs V, P, T and H monitor the speed v, tyre pressure p, temperature t and relative
humidity h of a car. These outputs switch from 0 to 1 when the values of the parameters exceed
85km/hr, 2 bar, 40o C and 50%, respectively. A logic circuit that is used to switch ON a lamp at
the output E is shown below.
1. v < 85km/hr, p < 2bar, t > 40o C, h > 50% 2. v < 85km/hr, p < 2bar, t > 40o C, h < 50%
3. v > 85km/hr, p < 2bar, t > 40o C, h < 50% 4. v > 85km/hr, p < 2bar, t < 40o C, h > 50%
If the input is a sinusoidal wave Vi = 5 sin(1000t), then the amplitude of the output V0 is [Dec-2013,
3.5m]
30. If one of the inputs of a J − K flip flop is high and the other is low, then the outputs Q and Q
[Dec-2013, 3.5m]
31. Two identical Zener diodes are placed back to back in series and are connected to a variable DC
power supply. The best representation of the I − V characteristics of the circuit is [Dec-2013,
3.5m]
(g) 1 (h) 2
(i) 3 (j) 4
32. A sample of Si has electron and hole mobilities of 0.13 and 0.05m2 /V − s respectively at 300K. It
is doped with P and Al with doping densities of 1.5 × 1021 /m3 and 2.5 × 1021 /m3 respectively. The
conductivity of the doped Si sample at 300K is [Dec-2013, 5m]
P
33. A 4-variable switching function is given by f = (5, 7, 8, 10, 13, 15) + d(0, 1, 2), where d is the do-not-
care-condition. The minimized form of f in sum of products (SOP ) form is [Dec-2013,
5m]
1. ĀC̄ + B̄ D̄ 2. AB̄ + C D̄
3. AD + BC 4. B̄ D̄ + BD)
1. is useful for converting a low impedance source into a high impedance source
2. is useful for converting a high impedance source into a low impedance source
3. has infinitely high closed loop output impedance
4. has infinitely high closed loop gain
1. 6 2. 12
3. 9 4. 3
A B̄
B x
C
1. C 2.
A A
x x
B B
C C̄
3. 4.
(V − 0.7)/500 for V ≥ 0.7
37. The I−V characteristics of the diode in the circuit below is given by I =
0, for V < 0.
where V is measured in volts and I is measured in amperes. The current I in the circuit is
[Dec-2014, 3.5m]
1. 10.0mA 2. 9.3mA
3. 6.2mA 4. 6.7mA)
38. A junction is made between a metal of work function WM , and a doped semiconductor of work
function WS with WM > WS . If the electric field at the interface has to be increased by a factor
of 3, then the dopant concentration in the semiconductor would have to be [Dec-2014, 3.5m]
39. Consider the amplifier circuit comprising of the two op-amps A1 and A2 as shown in the figure.
If the input ac signal source has an impedance of 50kΩ, which of the following statements is true?
[Dec-2014, 3.5m]
40. The power density of sunlight incident on a solar cell is 100mW/cm2 . Its short circuit current
density is 30mA/cm2 and the open circuit voltage is 0.7V. If the fill factor of the solar cell decreases
from 0.8 to 0.5 then the percentage efficiency will decrease from [Dec-2014, 5m]
41. A large M OS transistor consists of N individual transistors connected in parallel. If the only
form of noise in each transistor is 1/f noise, then the equivalent voltage noise spectral density
for the M OS transistor is [Dec-2014, 5m]
1. 1/N times that of a single transistor 2. 1/N 2 times that of a single transistor
42. Consider a Low Pass (LP ) and a High Pass (HP ) filter with cut-off frequencies fLP and fHP ,
respectively, connected in series or in parallel configurations as shown in the Figures A and B
below.
Figure 1: (A)
Figure 2: (B)
1. For fHP < fLP , A acts as a Band Pass filter and B acts as a Band Reject filter
2. For fHP > fLP , A stops the signal from passing through and B passes the signal without filtering
3. For fHP < fLP , A acts as a Band Pass filter and B passes the signal without filtering
4. For fHP > fLP , A passes the signal without filtering and B acts as a Band Reject filter
43. Consider the circuits shown in Figures (a) and (b) below
(a) (b)
1. active region and saturation region respectively 2. saturation region and active region respec-
tively
44. Which of the following circuits behaves as a controlled inverter? [June-2015, 3.5m]
(c) (d)
(e) (f)
Eg Eg
1. 2.
(2kB ) kB
Eg Eg
3. − 4. −
(2kB ) kB
46. For the circuit and the input sinusoidal waveform shown in the figures below, which is the correct
waveform at the output? [June-2015, 5m]
5K
10K
+
1K
Vi −
Vo
+
0.10−
0.50−
Vi
t
−0.50−
−0.10−
0.50− 0.50−
Vo
Vo
t t
−0.50− −0.50−
−0.10− −0.10−
1. 2.
0.10− 0.10−
0.50− 0.50−
Vo
Vo
t t
−0.50− −0.50−
−0.10− −0.10−
3. 4.
47. For the logic circuit given below, the decimal count sequence and the modulus of the circuit
corresponding to A B C D are [June-2015, 5m]
1. 8 → 4 → 2 → 1 → 9 → 5(mod 6) 2. 8 → 4 → 2 → 9 → 5 → 3(mod 6)
3. 2 → 5 → 9 → 1 → 3(mod 5) 4. 8 → 5 → 1 → 3 → 7(mod 5)
48. In the circuit given below, the thermistor has a resistance 3kΩ at 25o C. Its resistance decreases
by 150Ω per o C upon heating. The output voltage of the circuit at 30o C is [June-2015, 5m]
1. −3.75V 2. −2.25V
3. 2.25V 4. 3.75V
49. If the reverse bias voltage of a silicon varactor is increased by a factor of 2, the corresponding
transition capacitance [Dec-2015, 3.5m]
√
1. increase by a factor of 2 2. increase by a factor of 2
√
3. decrease by a factor of 2 4. decrease by a factor of 2
T0 T1 T2
CLOCK
SHIF T
51. If the parameters y and x are related by y = log(x), then the circuit that can be used to produce
an output voltage V0 varying linearly with x is [Dec-2015, 3.5m]
(g) (h)
52. Two data sets A and B consist of 60 and 10 readings fo a voltage measured using voltmeters of
resolution of 1mV and 0.5mV respectively. The uncertainty in the mean voltage obtained from
the data sets A and B are UA and UB , respectively. If the uncertainty of the mean of the combined
data sets is UAB , then which of the following statements is correct? [Dec-2015, 3.5m]
1. UAB < UA and UAB > UB 2. UAB < UA and UAB < UB
3. UAB > UA and UAB < UB 4. UAB > UA and UAB > UB
53. Consider an n − M OSF ET with the following parameters: current drive strength K = 60 A/V 2 ,
breakdown voltage BVDS = 10V, ratio fo effective gate width to the channel length W L = 5 and
threshold voltage Vth = 0.5V. In the circuit given below, this n − M OSF ET is operating in the
[Dec-2015, 5m]
54. The state diagram corresponding to the following circuit is [Dec-2015, 5m]
(i) (j)
55. A sinusoidal signal of peak to peak amplitude 1V and unknown time period is input to the
following circuit for 5 seconds duration. If the counter measures a value (3E8)H in hexadecimal
then the time period of the input signal is [Dec-2015, 5m]
1. 2.5ms 2. 4ms
3. 10ms 4. 5ms
57. In the schematic figure given below, assume that the propagation delay of each logic gate is tgate
The propagation delay of the circuit will be maximum when the logic inputs A and B make the
transition [June-2016, 3.5m]
58. Given the input voltage Vi , which of the following waveforms correctly represents the output
voltage V0 in the circuit shown below? [June-2016, 3.5m]
59. The intensity distribution of a red LED on an absorbing layer of material is a Gaussian centred at
the wavelength λ0 = 660nm and width 20nm. If the absorption coefficient varies with wavelength
as α0 − K(λ − λ0 ), where α0 and K are positive constants, the light emerging from the absorber
will be [June-2016, 3.5m]
1. blue shifted retaining the Gaussian intensity distribution 2. blue shifted with an asymmetric intensity
distribution
3. red shifted retaining the Gaussian intensity distribution 4. red shifted with an asymmetric intensity
distribution
60. Two completely overlapping semi-circular parallel plates comprise a capacitive transducer. One
of the plates is rotated by an angle of 10o relative to their common centre. Ignoring edge effects,
the ratio, In : Io , of sensitivity of the transducer in the new configuration with respect to the
original one, is [June-2016, 5m]
1. 8 : 9 2. 11 : 12
3. 17 : 18 4. 35 : 36
61. The state diagram that detects three or more consecutive 10 s in a serial bit stream is [June-2016,
5m]
(m) (n)
P
62. Which of the following circuits implements the Boolean function F (A, B, C) = (1, 2, 4, 6)? [Dec-
2016, 3.5m]
aV
63. The I − V characteristics of a device is I = IS exp − 1 , where T is the temperature and a
T
and IS are constants independent of T and V . Which one of the following plots is correct for a
fixed applied voltage V ? [Dec-2016, 3.5m]
(q) (r)
64. The active medium in a blue LED (light emitting diode) is a Gax In1−x N alloy. The band gaps of
GaN and InN are 3.5eV and 1.5eV respectively. If the band gap of Gax In1−x N varies approximately
linearly with x, the value of x required for the emission of blue light of wavelength 400nm is (take
hc ≈ 1200eV − nm) [Dec-2016, 3.5m]
1. 0.95 2. 0.75
3. 0.50 4. 0.33
65. In the circuit below, the input voltage Vi is 2V, Vcc = 16V, R2 = 2kΩ and RL = 10kΩ. The value of
R1 required to deliver 10mW of power across RL is [Dec-2016, 5m]
3. 8kΩ 4. 14kΩ
66. Two sinusoidal signals are sent to an analog multiplier of scale factor 1V −1 followed by a low pass
filter (LP F )
If the roll-off frequency of the LP F is fc = 5Hz, the output voltage Vout is [Dec-2016, 5m]
1. 5V 2. 25V
3. 100V 4. 50V
67. The resistance of a sample is measured as a function of temperature, and the data are shown
below
T (o C) 2 4 6 8
R(Ω) 90 105 110 115
The slope of R vs T graph, using a linear least-squares fit to the data, will be [Dec-2016, 5m]
1. 6Ω/o C 2. 4Ω/o C
3. 2Ω/o C 4. 8Ω/o C