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Energy Gap of A Semiconductor: Experiment 8

This experiment aims to determine the energy gap of a semiconductor using a pn junction. As temperature increases, the density of hole-electron pairs in the semiconductor increases, causing conductivity to rise unlike in metals. The reverse saturation current (Io) is measured at different temperatures and plotted against 1/kT to obtain the energy gap value from the slope of the graph based on the given equation relating Io, T, and Eg.

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Sukhwinder Singh Gill
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60 views2 pages

Energy Gap of A Semiconductor: Experiment 8

This experiment aims to determine the energy gap of a semiconductor using a pn junction. As temperature increases, the density of hole-electron pairs in the semiconductor increases, causing conductivity to rise unlike in metals. The reverse saturation current (Io) is measured at different temperatures and plotted against 1/kT to obtain the energy gap value from the slope of the graph based on the given equation relating Io, T, and Eg.

Uploaded by

Sukhwinder Singh Gill
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
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EXPERIMENT 8

ENERGY GAP OF A SEMICONDUCTOR

AIM: To determine the energy gap of a given semiconductor. To understand the variation of
reverse saturation current with temperature.

APPARATUS: A pn junction (preferably germanium), battery, heater, thermometer, micro-


ammeter, connecting wires.
Thermometer
CIRCUIT DIAGRAM

heater

BRIEF THEORY: A fundamental difference between a metal and a semiconductor is that the
former is unipolar, whereas a semiconductor is bipolar. One carrier is negative and the other is
positive. These particles move in opposite directions in an electric field, but since they are of
opposite sign, the current of each is in the same direction. With increasing temperature, the
density of hole electron pairs increases and, correspondingly, the conductivity increases,
contrary to metals.

The dependence of Io on temperature T is given approximately by


Io(T) = K T m e –Ego /  KT

Where K is constant, Ego energy (forbidden) gap in joules.


For Ge:  = 1, m=2
For Si:  = 2, m = 1.5
Io(T) reverse saturation current function of temperature.

PROCEDURE:

1. Connect the circuit as shown in circuit diagram


2. Apply constant 1.5 V bias.
3. Make sure the diode is in the reverse bias; and measure room temp To and reverse
current at room temp Io (To).
4. Switch on the heater and note down the ammeter reading for every 5 oC temperature
rise. Do not exceed 90 oC.
5. Plot the graphs Io(T) vs T and ln[(Io(T)/Io(To) T2/To2 ] vs (1/kTo –1/kT).
6. Write down your conclusions.
OBSERVATION TABLE

To = Io(To) =

S. No. T Io(T) ln[(Io(T)/Io(To) T2/To2 ] (1/kTo –1/kT)

CONCLUSIONS:

The energy gap of the given semiconductor is eV

QUESTIONS:

1. Explain why a semiconductor acts as an insulator at 0 K and why its conductivity increases
with increasing temperature.
2. What is the distinction between an intrinsic and an extrinsic semiconductor?
3. What is a hole in a semiconductor?
4. Suggest a different method to determine the energy gap.
5. Is the temperature coefficient of resistance of a semiconductor positive or negative?
Explain.
6. An electron and hole recombine and disappear. Explain the physical meaning of this
statement.

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