GBLA005 thru GBLA10

Vishay General Semiconductor

Glass Passivated Single-Phase Bridge Rectifier

FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability

~ • Typical IR less than 0.1 µA

~ • High case dielectric strength
~ ~
• Solder dip 260 °C, 40 s
Case Type GBL
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
PRIMARY CHARACTERISTICS rectification for monitor, TV, printer, SMPS, adapter,
IF(AV) 4A audio equipment, and home appliances application.
VRRM 50 V to 1000 V
IFSM 120 A MECHANICAL DATA
IR 5 µA Case: GBL
VF 1.0 V Epoxy meets UL 94V-0 flammability rating
TJ max. 150 °C Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL GBLA005 GBLA01 GBLA02 GBLA04 GBLA06 GBLA08 GBLA10 UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward TC = 50 °C (1) 4.0
IF(AV) A
rectified output current at TA = 40 °C (2) 3.0
Peak forward surge current single
IFSM 120 A
sine-wave superimposed on rated load
Rating for fusing (t < 8.3 ms) I2t 60 A2s
Operating junction and storage
TJ, TSTG - 55 to + 150 °C
temperature range

Notes:
(1) Unit mounted on 3.0 x 3.0 x 0.11" thick (7.5 x 7.5 x 0.3 cm) aluminum plate
(2) Unit mounted on P.C.B. at 0.375" (9.5 mm) lead length and 0.5 x 0.5" (12 x 12 mm) copper pads

Document Number: 88610 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 30-Apr-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 1
GBLA005 thru GBLA10
Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL GBLA005 GBLA01 GBLA02 GBLA04 GBLA06 GBLA08 GBLA10 UNIT

Maximum
instantaneous
4.0 A VF 1.0 V
forward voltage
drop per diode

Maximum DC
reverse current at TA = 25 °C 5.0
IR µA
rated DC blocking TA = 125 °C 500
voltage per diode

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL GBLA005 GBLA01 GBLA02 GBLA04 GBLA06 GBLA08 GBLA10 UNIT
(2)
RθJA 47
Typical thermal resistance °C/W
RθJC 10 (1)
Notes:
(1) Unit mounted on 3.0 x 3.0 x 0.11" thick (7.5 x 7.5 x 0.3 cm) aluminum plate
(2) Unit mounted on P.C.B. at 0.375" (9.5 mm) lead length and 0.5 x 0.5" (12 x 12 mm) copper pads

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
GBLA06-E3/45 2.133 45 20 Tube
GBLA06-E3/51 2.133 51 400 Anti-static PVC tray

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

5.0 150
TJ = TJ Max.
Average Forward Output Current (A)

60 Hz Resistive or Inductive Load

Single Sine-Wave
Peak Forward Surge Current (A)

4.0 Heat-Sink Mounting

3.0 x 3.0 x 0.11" Thick
(7.5 x 7.5 x 0.3 cm) 100
3.0 Aluminum Plate

2.0
50
P.C.B. Mounted
0.47 x 0.47" (12 x 12 mm)
1.0 Copper Pads with 0.375"
(9.5 mm) Lead Length 1.0 Cycle

0 0
0 50 100 150 1 10 100
Ambient Temperature (°C) Number of Cycles at 60 Hz

Figure 1. Derating Curves Output Rectified Current Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88610
2 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Revision: 30-Apr-08
 GBLA005 thru GBLA10
Vishay General Semiconductor

100 1000
TJ = 25 °C
Instantaneous Forward Current (A)

f = 1.0 MHz
Vsig = 50 mVp-p

Junction Capacitance (pF)

10

1 100

TJ = 25 °C
0.1 Pulse Width = 300 µs
1 % Duty Cycle 50 - 400 V
600 - 1000 V

0.01 10
0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100
Instantaneous Forward Voltage (V) Reverse Voltage (V)

Figure 3. Typical Forward Voltage Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode

1000 100

Transient Thermal Impedance (°C/W)

Instantaneous Reverse Current (µA)

100

10
10 TA = 125 °C

50 - 400 V
1
600 - 1000 V
1

0.1
TA = 25 °C

0.01 0.1
0 20 40 60 80 100 0.01 0.1 1 10 100
Percent of Rated Peak Reverse Voltage (%) t - Heating Time (s)

Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Case Type GBL
0.825 (20.9)
0.125 (3.17) x 45° 0.815 (20.7)
Chamfer

0.421 (10.7)
0.080 (2.03) 0.411 (10.4)
0.060 (1.50)

0.098 (2.5)
0.095 (2.41) 0.075 (1.9)
0.080 (2.03) 0.718 (18.2)
0.098 (2.5) 0.682 (17.3)
Lead Depth
0.075 (1.9) 0.022 (0.56)
0.050 (1.27) 0.018 (0.46)
0.040 (1.02)
0.210 (5.3)
0.190 (4.8)
0.040 (1.02)
0.030 (0.76) 0.140 (3.56)
0.026 (0.66)
0.128 (3.25)
0.020 (0.51)

Polarity shown on front side of case, positive lead beveled corner

Document Number: 88610 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 30-Apr-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 3
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Vishay

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Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1