DJM20042

ELECTRONIC SYSTEMS

CHAPTER 2-2

SEMICONDUCTOR DEVICES

(FET, MOSFET, UJT)

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 Contents

1. Field – Effect TransistorS (FET)

2. metal-oxide Field – Effect TransistorS (MOSFET)
3. Uni-junction Transistor (UJT)

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 FET Transistors
• Three terminals: Drain (D), Source (S) and Gate (G).
• Types of FET (Field Effect Transistors)
o JFET (Junction Field-Effect Transistor)
o MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
o MESFET
o HEMT
o MODFET
o D-MOSFET ~ Depletion MOSFET
o E-MOSFET ~ Enhancement MOSFET

• Most common are the N-type MOSFET or JFET

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 JFET
• There are three terminals: Drain (D) and Source (S) are connected
to n-channel and Gate (G) is connected to the p-type material.
• There are two types of JFET’s: n-channel and p-channel.
• The n-channel is more widely used.

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 N-channel JFET Construction

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 Basic Operation of JFET

JFET operation can be compared to a water spigot:

 The source of water pressure – accumulated electrons at the negative

pole of the applied voltage from Drain to Source.

 The drain of water – electron deficiency (or holes) at the positive pole
of the applied voltage from Drain to Source.

 The control of flow of water – Gate voltage that controls the width of
the n-channel, which in turn controls the flow of electrons in the n-
channel from source to drain.
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 JFET Operating Characteristics

There are three basic operating conditions for a JFET:

A. VGS = 0, VDS increasing to some positive value

B. VGS < 0, VDS at some positive value

C. Voltage-Controlled Resistor

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 VGS = 0, VDS increasing to some positive value

Three things happen when VGS = 0 and VDS is increased from 0 to a more
positive voltage:
• the depletion region between p-gate and n-channel increases as electrons
from
n-channel combine with holes from p-gate.
• increasing the depletion region, decreases the size of the n-channel which
increases the resistance of the n-channel.
• But even though the n-channel resistance is increasing, the current (I D)
from
Source to Drain through the n-channel is increasing. This is because V DS
is increasing.
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 Pinch-off

If VGS = 0 and VDS is further increased to a more positive voltage, then

the depletion zone gets so large that it pinches off the n-channel. This
suggests that the current in the n-channel (ID) would drop to 0A, but it
does just the opposite: as VDS increases, so does ID.

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 Saturation

At the pinch-off point:

• any further increase in VGS does not produce any increase in I D.
VGS at
pinch-off is denoted as Vp.
• ID is at saturation or maximum. It is referred to as I DSS.
• The ohmic value of the channel is at maximum.

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 VGS < 0, VDS at some positive value

As VGS becomes more negative the depletion region increases.

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 ID < IDSS

As VGS becomes more negative:

• the JFET will pinch-off at a lower voltage (Vp).
• ID decreases (ID < IDSS) even though VDS is increased.
• Eventually ID will reach 0A. VGS at this point is called Vp or VGS(off).
• Also note that at high levels of VDS the JFET reaches a breakdown
situation.
ID will increases uncontrollably if VDS > VDSmax.
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 C. Voltage-Controlled Resistor

The region to the left of the pinch-off point is called the ohmic region.
The JFET can be used as a variable resistor, where VGS controls the drain-source
resistance (rd). As VGS becomes more negative, the resistance (rd) increases.

ro [Formula 5.1]
rd 
(1 VGS )2
VP
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 p-Channel JFETS

p-Channel JFET acts the same as the n-channel JFET, except the polarities and
currents are reversed.

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 P-Channel JFET Characteristics

As VGS increases more positively:

• the depletion zone increases
• ID decreases (ID < IDSS)
• eventually ID = 0A
Also note that at high levels of VDS the JFET reaches a breakdown situation.
ID increases uncontrollably if VDS > VDSmax.

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 Transfer Characteristics

The transfer characteristic of input-to-output is not as straight forward in a

JFET as it was in a BJT.

In a BJT,  indicated the relationship between IB (input) and IC (output).

In a JFET, the relationship of VGS (input) and ID (output) is a little more

complicated:
VGS 2
ID  IDSS(1 )
VP [Formula 5.3]

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 Transfer Curve

From this graph it is easy to determine the value of ID for a given value of VGS.

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 Plotting the Transfer Curve
Using IDSS and Vp (VGS(off)) values found in a specification sheet, the Transfer
Curve can be plotted using these 3 steps:
VGS 2
Step 1: ID  IDSS(1 )
VP
[Formula 5.3]

Solving for VGS = 0V: ID  IDSS [Formula 5.4]

VGS  0V

Step 2: VGS 2
ID  IDSS(1 ) [Formula 5.3]
VP

Solving for VGS = Vp (VGS(off)): ID  0 A VGS  V [Formula 5.5]

P

Step 3:
VGS 2
Solving for VGS = 0V to Vp: ID  IDSS(1 ) [Formula 5.3]
VP

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 Specification Sheet (JFETs)

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 MOSFETs
MOSFETs have characteristics similar to JFETs and additional
characteristics that make then very useful.

There are 2 types:

 Depletion-Type MOSFET
 Enhancement-Type MOSFET

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 Depletion-Type MOSFET symbol

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 n-Channel Depletion -Type MOSFET Construction

The Drain (D) and Source (S) connect to the to n-doped regions. These N-doped
regions are connected via an n-channel. This n-channel is connected to the Gate
(G) via a thin insulating layer of SiO2. The n-doped material lies on a p-doped
substrate that may have an additional terminal connection called SS.

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 Basic Operation

A Depletion MOSFET can operate in two modes: Depletion or Enhancement

mode.

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 n-Channel Depletion -type MOSFET in Depletion Mode

Depletion mode
The characteristics are similar to the JFET.
When VGS = 0V, ID = IDSS
When VGS < 0V, ID < IDSS
The formula used to plot the Transfer Curve still applies:
VGS 2
ID  IDSS(1 )
VP [Formula 5.3]

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 n-Channel Depletion -type MOSFET in Enhancement Mode

Enhancement mode
VGS > 0V, ID increases above IDSS
The formula used to plot the
VGS 2
ID  IDSS(1 )
VP
Transfer Curve still applies: [Formula 5.3]
(note that VGS is now a positive polarity)

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 p-Channel Depletion-Type MOSFET

The p-channel Depletion-type MOSFET is similar to the n-channel except that the
voltage polarities and current directions are reversed.

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 p-Channel Enhancement-Type MOSFETs
The p-channel Enhancement-type MOSFET is similar to the n-channel except
that the voltage polarities and current directions are reversed.

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 MOSFET Handling

MOSFETs are very static sensitive. Because of the very thin SiO2 layer between
the external terminals and the layers of the device, any small electrical discharge
can stablish an unwanted conduction.

Protection:
• Always transport in a static sensitive bag

• Always wear a static strap when handling MOSFETS

• Apply voltage limiting devices between the Gate and Source, such as
back-to-
back Zeners to limit any transient voltage.

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 VMOS

VMOS – Vertical MOSFET increases the surface area of the device.

Advantage:
• This allows the device to handle higher currents by providing it more
surface
area to dissipate the heat.
• VMOSs also have faster switching times.
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 CMOS
CMOS – Complementary MOSFET p-channel and n-channel MOSFET on
the same substrate.

Advantage:
• Useful in logic circuit designs
• Higher input impedance
• Faster switching speeds
• Lower operating power levels

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 JFET vs MOSFET

JFET MOSFET

Operated in both Enhancement and

1 Operated only in depletion mode
depletion mode
Conductivity is controlled by the Conductivity is controlled by the
2
reverse biasing of the gate carriers induced in the channel
3 It has High Gate current It has low Gate current

4 High Input Impedance Very High Input Impedance

5 More flat characteristics curve Less Flat characteristics curve

6 High Drain resistance Low Drain resistance

7 Simple manufacturing process Difficult manufacturing process

8 Normally On device Normally Off Device

9 Three terminal Four Terminals

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UNIJUNCTION TRANSISTOR (UJT)

• The uni-junction transistor is a three-terminal single-junction device.

The switching voltage of the UJT can be easily varied.
• The UJT is always operated as a switch in oscillators, timing circuits
and in SCR/TRIAC trigger circuits.

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 Constructional Features:
• The UJT structure consists of a lightly doped n-type silicon bar provided with
ohmic contacts on either side.

• The two end connections are called base B1 and base B2. A small heavily
doped p-region is alloyed into one side of the bar. This p-region is the UJT
emitter (E) that forms a p–n junction with the bar.
• Between base B1 and base B2, the resistance of the n-type bar called inter-
base resistance (RB ) and is in the order of a few kilo ohm.

• This inter-base resistance can be broken up into two resistances—the

resistance from B1 to the emitter is RB1 and the resistance from B2 to the
emitter is RB 2.
• Since the emitter is closer to B2 the value of RB1is greater than RB2.
• Total resistance is given by:
RB = RB1 + RB2

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 UJT V–I characteristic curves:

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ON State of the UJT Circuit:
• As VEE increases, the UJT stays in the OFF state until V E approaches
the peak point value V P. As VE approaches VP the p–n junction
becomes forward-biased and begins to conduct in the opposite
direction.
• As a result IE becomes positive near the peak point P on the VE - IE
curve. When VE exactly equals VP the emitter current equals IP .

• At this point holes from the heavily doped emitter are injected into
the n-type bar, especially into the B1 region. The bar, which is lightly
doped, offers very little chance for these holes to recombine.

• The lower half of the bar becomes replete with additional current
carriers (holes) and its resistance RB is drastically reduced; the
decrease in BB1 causes Vx to drop.
• This drop, in turn, causes the diode to become more forward-biased
and IE increases even further.

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 OFF State of the UJT Circuit:
• When a voltage VBB is applied across the two base terminals B1
and B2, the potential of point p with respect to B1 is given by:
VP =[VBB/ (RB1 +RB2)]*RB1=η*RB1
• η is called the intrinsic stand off ratio with its typical value lying
between 0.5 and 0.8.

• The VEE source is applied to the emitter which is the p-side. Thus, the
emitter diode will be reverse-biased as long as VEE is less than Vx.
This is OFF state and is shown on the VE - IE curve as being a very
low current region.

• In the OFF the UJT has a very high resistance between E and B1,
and IE is usually a negligible reverse leakage current. With no IE, the
drop across RE is zero and the emitter voltage equals the source
voltage.

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Applications:
• The UJT is very popular today mainly due to its high switching speed.

• A few select applications of the UJT are as follows:

(i) It is used to trigger SCRs and TRIACs
(ii) It is used in non-sinusoidal oscillators
(iii) It is used in phase control and timing circuits
(iv) It is used in saw tooth generators
(v) It is used in oscillator circuit design

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 DIFFERENCES BETWEEN FET AND BJT.
BJT FET
How it operates
BJTs are current-controlled. They FETs are voltage-controlled. They only
require a biasing current to the require voltage applied to the gate to turn the
base terminal of operation. FET either on or off.
BJTs offer smaller input FETs offer greater input impedance than
impedances, meaning they draw BJTs. This means that they practically draw
Input Impedance more current from the power no current and therefore load down the
circuit feeding it, which can cause power circuit that's feeding a lot less and
loading of the circuit. minimally.
are known as emitter, collector and
Terminal gate, source and drain.
base
Gain BJTs offer greater gain at the The gain (or trans-conductance ) of FETs are
(Transconductance) output than FETs. smaller than for BJTs.
FETs can be manufactured much smaller
BJTs are larger in size and
than BJTs. This is especially important for
Size therefore take up more physical
integrated circuits that are composed up of
space than FETs normally.
many transistors.

BJTs are less popular and less FETS are definitely more popular and widely
Popularity
widely used used in commercial circuits today than BJTs

FETs, especially MOSFETs, are more

Cost BJTs are cheaper to manufacture
JKM/PUO/PCTAN2021 expensive to manufacture
FET’s (Field – Effect Transistors) are much like BJT’s (Bipolar Junction
Transistors).

Similarities:
• Amplifiers
• Switching devices
• Impedance matching circuits

Differences:
 FET’s are voltage controlled devices whereas BJT’s are current
controlled devices.
 FET’s also have a higher input impedance, but BJT’s have higher
gains.
 FET’s are less sensitive to temperature variations and because of
there
construction they are more easily integrated on IC’s.
 FET’s are also generally more static sensitive than BJT’s.

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