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Given: DV/DT 1000 V/ S and I: Chapter 9 - Thyristors

This document summarizes key concepts and equations related to thyristors from Chapter 9. It includes 12 practice problems applying these concepts and equations to calculate various thyristor parameters such as critical dv/dt, effective capacitance, turn-on time, and reverse blocking capability. The problems calculate values for capacitance, resistance, voltage, and current based on given specifications for thyristors.
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0% found this document useful (0 votes)
466 views

Given: DV/DT 1000 V/ S and I: Chapter 9 - Thyristors

This document summarizes key concepts and equations related to thyristors from Chapter 9. It includes 12 practice problems applying these concepts and equations to calculate various thyristor parameters such as critical dv/dt, effective capacitance, turn-on time, and reverse blocking capability. The problems calculate values for capacitance, resistance, voltage, and current based on given specifications for thyristors.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 8

Chapter 9 - Thyristors

Prob 9-1

Given: dv/dt = 1000 V/µs and iJ2 = 20 mA. Because d(CJ2)/dt = 0, we can find the critical value
of Cj2 from Eq. (9.6):
𝑖𝑖 𝑗𝑗 2 20 × 10 −3
Cj2 = 𝑑𝑑𝑑𝑑 � = 1000 × 10 6 = 20 𝑝𝑝𝑝𝑝
𝑑𝑑𝑑𝑑

Prob 9-2

Given: Cj2 = 40 pF, iJ2 = 20 mA, C1 = 0.02 µF = 20000 pF

The effective capacitance Ce = Cj2 + C1 = 20040 pF

𝑑𝑑𝑑𝑑 𝑖𝑖𝑗𝑗 2 20 × 10−3


= = = 500 𝑉𝑉/µs
𝑑𝑑𝑑𝑑 𝐶𝐶𝑗𝑗 2 40 × 10−12

𝑖𝑖1 = 𝐶𝐶1 𝑑𝑑𝑑𝑑�𝑑𝑑𝑑𝑑 = 0.02 × 10−6 × 500 × 106 = 10 𝐴𝐴


The total current from the supply, iT = 𝑖𝑖𝑗𝑗 2 + 𝑖𝑖1 = 0.020 + 10 = 10.02 𝐴𝐴

Critical Value of dv/dt is given by as limiting value of charging current is 20 mA,


𝑑𝑑𝑑𝑑 𝑖𝑖 𝑇𝑇 20 × 10−3
= = = 0.998 𝑉𝑉/µs
𝑑𝑑𝑑𝑑 𝐶𝐶𝑒𝑒 20040 × 10−12

Prob 9.3

Given: Cj2 = 30 pF, iJ2 = 20 mA, dv/dt = 400 V/µs

The effective capacitance Ce = Cs + Cj2


𝑑𝑑𝑑𝑑 V 𝑖𝑖 𝑇𝑇 20× 10 −3
𝑑𝑑𝑑𝑑
= 400 µs = = ∴ Ce = 50pF
𝐶𝐶𝑒𝑒 𝐶𝐶𝑒𝑒

∴ 𝐶𝐶𝑠𝑠 = 𝐶𝐶𝑒𝑒 − 𝐶𝐶𝑗𝑗 2 = 50 − 30 = 20 𝑝𝑝𝑝𝑝

Chapter 9 - Thyristors
Page # 9 - 2
Prob 9-4
−6
ITD := 5 R := 10 L := 50⋅ 10 Ls := 0 Vs := 200 δ := 0.7

( a) Vs
Rs := Rs = 40
ITD

−6
Guess Cs := 0.5⋅ 10

Given
R + Rs Cs
Using Eq. (9-18) ⋅ = δ
2 L

Cs := Find Cs ( ) 6
Cs⋅ 10 = 0.039 uF
( b) From Eq. (9-21)

Using Eq. (9-21)


0.632⋅ R⋅ Vs
dv_dt := dv_dt V
= 12.898
(
Cs⋅ R + Rs ) 2
10
6 μs

Prob 9-5
−6
ITD := 5 R := 10 L := 50⋅ 10 Ls := 0 Vs := 179 δ := 0.7
f := 60 ω := 2⋅ π ⋅ f ω = 376.991
( a) Vs
Rs := Rs = 35.8
ITD

−6
Guess Cs := 0.5⋅ 10

Given
R + Rs Cs
Using Eq. (9-18) ⋅ = δ
2 L

Cs := Find Cs ( ) 6
Cs⋅ 10 = 0.047 uF
XL := ω ⋅ L XL = 0.019

Chapter 9 - Thyristors
Page # 9 - 3
1
XC := 4
ω ⋅ Cs XC = 5.678 × 10
−6
Guess Cs := 0.5⋅ 10

Given
R + Rs Cs
Using Eq. (9-18) ⋅ = δ
2 L

Cs := Find Cs ( ) 6
Cs⋅ 10 = 0.047 uF

(
τ := Cs⋅ R + Rs ) τ = 2.14 × 10
−6

Prob 9-6

Ip := 1000 −6 −6 1
t1 := 5⋅ 10 t2 := 5⋅ 10 f := 60 T := T = 0.017
f

IT := ⋅ ⎡⎢ ⋅ t1⋅ Ip + T − t1 − t2 ⋅ Ip + ⋅ t2⋅ Ip⎥⎤


( )
1 1 1
IT = 999.7
T ⎣2 2 ⎦

Prob 9-7
Given: Vs = 25000 V, ∆𝐼𝐼𝐷𝐷 = 15 𝑚𝑚𝐴𝐴, ∆𝑄𝑄 = 175 𝜇𝜇𝐶𝐶, 𝐷𝐷𝐷𝐷𝑝𝑝 = 12%

𝑉𝑉𝐷𝐷(max )= 1200 V, From Eqn. (9.13)


𝑉𝑉
DRF = 1 − 𝑛𝑛𝑠𝑠𝑉𝑉𝐷𝐷𝐷𝐷(max
𝑠𝑠
or 0.12 = 1 − (25000/(ns × 1200))
)

∴ 𝑛𝑛𝑠𝑠 = 23.67 ≅ 24 𝑇𝑇ℎ𝑦𝑦𝑦𝑦𝑖𝑖𝑠𝑠𝑑𝑑𝑦𝑦𝑦𝑦𝑠𝑠

(a) From Eqn. (9.9)

25000 + 23 × 𝐷𝐷 × 15 × 10−3
1200 = ; ∴ 𝐷𝐷 = 11 𝑘𝑘 Ω
24

Chapter 9 - Thyristors
Page # 9 - 4
(b) From Eqn.(9.12)

1 23 × 175 × 10−6
1200 = �25000 + � ; ∴ 𝐶𝐶1 = 1.059 𝜇𝜇𝑝𝑝
24 𝐶𝐶1

Prob 9.8

Given: IL = 750 A, VT1 = 1.5 V at 300 A, VT2 = 1.8 V at 300 A. Total terminal voltage v = VT =
3.0 V

I1 − I2 = 0.075 × 750 = 56.25 A

I1 + I2 = 750 A

I1 = 431.25 A, I2 = 318.75 A

𝑉𝑉𝑇𝑇1 + 𝐷𝐷1 𝐼𝐼1 = 𝑉𝑉𝑇𝑇

𝑉𝑉𝑇𝑇1 + 𝐷𝐷1 𝐼𝐼1 = 𝑉𝑉𝑇𝑇2 + 𝐷𝐷2 𝐼𝐼2 = 𝑉𝑉𝑇𝑇

1.5 + R1×431.25 = 1.8 + R2×318.75

431.25 R1 – 318.75 R2 = 0.3

1.5 + R1×431.25 = 3.0

∴ 𝐷𝐷1 = 1.5/431.25 = 3.478 𝑚𝑚Ω

1.8 + R2×318.75 = 3.0

∴ 𝐷𝐷2 = 1.2/318.75 = 3.764 𝑚𝑚Ω

Prob 9.9

Given: Cj2 = 60 x 10-12 F and iJ2 = 20 mA. Because d(Cj2)/dt = 0, we can find the critical value
of dv/dt from Eq. (9.6):

𝑑𝑑𝑑𝑑 𝑖𝑖𝑗𝑗 2 20 𝑥𝑥 10−3


= = = 333.33 𝑉𝑉/𝜇𝜇𝑠𝑠
𝑑𝑑𝑑𝑑 𝐶𝐶𝑗𝑗 2 60 𝑥𝑥 10−12

Chapter 9 - Thyristors
Page # 9 - 5
Prob 9-10
−6
Ip := 1000 t1 := 5⋅ 10 −6 1
t2 := 5⋅ 10 f := 1000 T := −3
f T = 1 × 10

IT := ⋅ ⎡⎢ ⋅ t1⋅ Ip + T − t1 − t2 ⋅ Ip + ⋅ t2⋅ Ip⎥⎤


( )
1 1 1
IT = 995
T ⎣2 2 ⎦

Prob 9-11
3 −3 −6
Vs := 30⋅ 10 ΔID := 15⋅ 10 ΔQ := 200⋅ 10 ID2 := ΔID
3 −6
R := 47⋅ 10 C1 := 0.47⋅ 10 ns := 20
Using Eq. (9-9)

( a) VDS_max := ⎣
(
⎡ Vs + ns − 1 ⋅ R⋅ ID2 ⎤⎦ ) 3
ns VDS_max = 2.17 × 10

Vs
( b) DRF := 1 −
ns⋅ VDS_max DRF⋅ 100 = 30.868 %
Using Eq. (9-11)

( c)
VDT_max :=
1 ⎡⎢
⋅ Vs +
(
ns − 1 ⋅ ΔQ ⎤
⎥ ) 3
ns ⎢ C1 ⎥ VDT_max = 1.904 × 10
Using Eq. (9-13)
⎣ ⎦
( d) Vs
DRF := 1 −
ns⋅ VDT_max DRF⋅ 100 = 21.229 %

Prob 9-12
3 6 ITD := 200
Vs := 240 R := 10 fs := 1⋅ 10 dv_dt := 250⋅ 10

V
( a) R := s
s Rs = 1.2
ITD

Chapter 9 - Thyristors
Page # 9 - 6
Using Eq. (9-21)
0.632⋅ R⋅ Vs
Cs := 6
Cs⋅ 10 = 0.048 μF
( R + Rs) 2
⋅ dv_dt
Using Eq. (9-22)
1 2
( b) Ps := ⋅ Cs⋅ Vs ⋅ fs Ps = 1.393
2

( c) Psnubber := Ps Psnubber = 1.393

Prob 9-13

Assume VD = 0.5 V

T = 1/f = 1/500 Hz = 2 ms.

From Eq. (9.26), Vp = 0.66 × 30 + 0.5 = 20.3 V.


Let C = 0.5 µF.

From Eqs. (9.24) and (9.25), the limiting values of R are


30 − 20.3
𝐷𝐷 < = 0.646 𝑀𝑀Ω
15 × 10−6
30 − 3
𝐷𝐷 > = 2.7 𝑘𝑘Ω
10 × 10−3

From Eq. (9.23), 2 ms = R × 0.5 µF × ln[1/(1 − 0.66)], which gives R = 3.77 kΩ, which
falls within the limiting values. The peak gate voltage VB1 = Vp = 20.3 V. From Eq. (9.27),
𝑑𝑑 𝑔𝑔 30
RB1 = 𝐶𝐶 = 0.5 = 60 Ω

From Eq. (9.28),

10 4 10 4
RB2 = 𝜂𝜂𝑉𝑉 = = 505 Ω
𝑠𝑠 0.66× 30

Chapter 9 - Thyristors
Page # 9 - 7
Prob 9-14

T = 1/f = 1/2 kHz = 0.5 ms. The peak triggering voltage VRk = Vp = 10 V.

Let C = 0.5 µF.

From Eq. (9.27), Rk = tg/C = 30 µs/0.5 µF = 60 Ω.

From Eq. (9.30), ƞ = Vp/Vs = 10/30 =1/3.

From Eq. (9.31), 0.5 ms = R ×0.5 µF × ln[30/(30 − 10)], which gives R = 2.466 kΩ.

For

IG = 2.5 mA, Eq. (9.32) gives RG = (1 − 1/3)2 × 30/2.5 mA = 8 kΩ. From Eq. (9.33),

R1 =RG/ƞ = 8 kΩ ×3/1 = 24 kΩ

From Eq. (9.34),

R2 =RG/(1 − ƞ) = 8 kΩ ×3/2 = 12 kΩ

Prob 9-15
−6 VGT := 2.5
C := 0.47⋅ 10

Chapter 9 - Thyristors
Page # 9 - 8
Vs := 240 Vm := 2⋅ Vs Vs = 240 Vm = 339.411

f := 50 ω := 2⋅ π ⋅ f f = 50 ω = 314.159
3 3
( a) R := 1.5⋅ 10 R = 1.5 × 10

θ := atan ( 2⋅ π ⋅ f ⋅ C⋅ R)
180
θ⋅ = 12.488
π
Vc := Vs⋅ cos ( θ ) Vc = 234.322 2⋅ Vc = 331.381
⎛⎜ VGT ⎟⎞
α := asin 180
⎜ 2⋅ Vc ⎟ α⋅ = 0.432
⎝ ⎠ π
180
α min := α + θ α min⋅ = 12.921
π
3 4
( b) R := 24⋅ 10 R = 2.4 × 10

θ := atan ( 2⋅ π ⋅ f ⋅ C⋅ R) 180
θ⋅ = 74.241
π
Vc := Vs⋅ cos ( θ ) Vc = 65.18 2⋅ Vc = 92.178
⎛⎜ VGT ⎟⎞
α := asin 180
⎜ 2⋅ Vc ⎟ α⋅ = 1.554
⎝ ⎠ π
180
α max := α + θ α max⋅ = 75.796
π

Chapter 9 - Thyristors
Page # 9 - 9

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