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2SA1493

This document provides product specification details for the 2SA1493 silicon PNP power transistor from Inchange Semiconductor. It includes descriptions of the device's applications in audio and general purposes, its pinning configuration, maximum ratings for voltage and current, typical characteristics like gain and switching times, and package outline dimensions. The transistor has a MT-200 package and is intended to complement the 2SC3857 device.

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Francisco Madrid
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74 views4 pages

2SA1493

This document provides product specification details for the 2SA1493 silicon PNP power transistor from Inchange Semiconductor. It includes descriptions of the device's applications in audio and general purposes, its pinning configuration, maximum ratings for voltage and current, typical characteristics like gain and switching times, and package outline dimensions. The transistor has a MT-200 package and is intended to complement the 2SC3857 device.

Uploaded by

Francisco Madrid
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1493

DESCRIPTION ·
·With MT-200 package
·Complement to type 2SC3857

APPLICATIONS
·Audio and general purpose

PINNING(see Fig.2)

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (MT-200) and symbol
3 Emitter

Absolute maximum ratings (Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -200 V

VCEO Collector-emitter voltage Open base -200 V

VEBO Emitter-base voltage Open collector -6 V

IC Collector current -15 A

IB B Base current -5 A

PC Collectorl power dissipation TC=25℃ 150 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


Inchange Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1493

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -200 V

VCEsat Collector-emitter saturation voltage IC=-10 A;IB=-1 A -3.0 V

ICBO Collector cut-off current VCB=-200V; IE=0 -100 μA

IEBO Emitter cut-off current VEB=-6V; IC=0 -100 μA

hFE DC current gain IC=-5A ; VCE=-4V 50 180

fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz

COB Output capacitance IE=0; VCB=-10V;f=1MHz 400 pF

Switching times

ton Turn-on time 0.30 μs

IC=-5A;RL=-12Ω
ts Storage time IB1=-IB2=-0.5A 0.90 μs
VCC=-60V

tf Fall time 0.20 μs

‹ hFE classifications

O P Y

50-100 70-140 90-180

2
Inchange Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1493

PACKAGE OUTLINE

Fig.2 Outline dimensions

3
Inchange Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1493

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