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Silicon PNP Power Transistors

This document provides product specifications for the 2SA1216 silicon PNP power transistor. It includes descriptions of the transistor's applications in audio and general purposes, its pinning configuration, and absolute maximum ratings. Key electrical characteristics like collector-emitter breakdown voltage, saturation voltage, current gain classifications, and switching times are specified. Dimensional outlines for the MT-200 package are also shown.

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EkoAriansyah
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102 views4 pages

Silicon PNP Power Transistors

This document provides product specifications for the 2SA1216 silicon PNP power transistor. It includes descriptions of the transistor's applications in audio and general purposes, its pinning configuration, and absolute maximum ratings. Key electrical characteristics like collector-emitter breakdown voltage, saturation voltage, current gain classifications, and switching times are specified. Dimensional outlines for the MT-200 package are also shown.

Uploaded by

EkoAriansyah
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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JMnic Product Specification

Silicon PNP Power Transistors 2SA1216

DESCRIPTION
・With MT-200 package
・Complement to type 2SC2922

APPLICATIONS
・Audio and general purpose

PINNING(see Fig.2)

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (MT-200) and symbol
3 Emitter

Absolute maximum ratings(Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -180 V

VCEO Collector-emitter voltage Open base -180 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -17 A

IB Base current -5 A

PC Collector power dissipation TC=25℃ 200 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


JMnic Product Specification

Silicon PNP Power Transistors 2SA1216

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0 -180 V

VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A -2.0 V

ICBO Collector cut-off current VCB=-180V; IE=0 -100 μA

IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA

hFE DC current gain IC=-8A ; VCE=-4V 30

Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 500 pF

fT Transition frequency IC=-2A ; VCE=-12V 40 MHz

Switching times

ton Turn-on time 0.30 μs

IC=-10A;RL=Ω
ts Storage time IB1=-IB2=-1A 0.70 μs
VCC=-40V

tf Fall time 0.20 μs

‹ hFE classifications

O Y P G

90-180
30-60 50-100 70-140

2
JMnic Product Specification

Silicon PNP Power Transistors 2SA1216

PACKAGE OUTLINE

Fig.2 outline dimensions

3
JMnic Product Specification

Silicon PNP Power Transistors 2SA1216

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