Effective Use of Power Devices

Silicon Power Devices

Application Examples Utilizing the Merits

© 2017 ROHM Co.,Ltd.

Si Power Devices: Application Examples Utilizing the Merits

Agenda

•Si Diodes

•Si Transistors

•Criteria for Selecting a Transistor

•Application Examples Utilizing the Merits

© 2017 ROHM Co.,Ltd. P. 1

Si Power Devices: Application Examples Utilizing the Merits

• Si Diodes
• Types and Characteristics
• Rectifier Diode: Characteristics Comparison
• Schottky Barrier Diode: Types and Characteristics
• Fast Recovery Diode: Types and Characteristics
• Si Transistors
• Criteria for Selecting a Transistor
• Application Examples Utilizing the Merits

© 2017 ROHM Co.,Ltd. P. 2

 Si Diodes

Types of Si Diode

Diodes Rectifier Diodes General Rectifier：REC

High Speed Rectifier

（Switching Di)：SW
Zener Diodes：ZD
Ultra High Speed Rectifier
（Fast Recovery Di：FRD）

Schottky Barrier Di：

SBD
High Frequency Diodes Detector SBD

ＰＩＮ-Di

Basic electric characteristics are the same.

⇒ Optimizing specific characteristics

© 2017 ROHM Co.,Ltd. P. 3

 Si Diodes
Electric Characteristics (Static Characteristics)
* Static characteristics：No change in the direction of applied voltage. (ex. direct current)

＜Reverse＞ ＜Forward＞
○
Current
・Forward (VF-IF)
IF：forward current Rectifier
Need small forward voltage to flow a Di
forward current.

× VF：forward voltage

・Reverse (VR-IR) VR：reverse voltage

Voltage
Flow small reverse current with a
reverse voltage.

IR：Reverse current
Break down (BV) ZD Leakage Current

IR sudden increases → Risk to destroy

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 Si Diodes
Electric Characteristics (Dynamic Characteristics)
* Dynamic characteristics：Change in the direction of applied voltage. (ex. alternating current)
＜Forward＞ ＜Reverse＞
・Reverse recovery time：ｔｒｒ IF
Time to no reverse current after
Ideal
applied voltages change forward to Time
reverse.
Actual
・Electrostatic capacitance：Ct
Same as a capacitor. IR

＜Original＞ ＜Cap: Small＞ ＜Cap: Large＞

Voltage

Voltage
Voltage

Time Time Time

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 Si Diodes
Ratings and Representative Electric Characteristics
Absolute maximum rating : Electric Characteristics of Diode :
The maximum values should not be exceeded
at any time, beyond which damage may occur..

• Continuous • VF：Forward voltage

• Io: Average rectifier current • IR：Reverse current(leakage current)
• VR：DC reverse voltage • Ct：Electrostatic capacitance
• Trr：Reverse recovery time
• Instantaneous
• IFSM： Surge current [Zener diodes only]
• VRM：Repetitive peak reverse voltage
• VZ： Zener voltage
• Operating temperature range • IZ： Zener current
• Tj： Junction Temp (temp inside Si chip) • ZZ： Dynamic resistance
• Storage environment
• Tstg： Storage temp range
＜How to chose a diode＞
1. Type
2. Rated current(Io) & voltage(VR)
3. Electric characteristics to meet the purpose

© 2017 ROHM Co.,Ltd. P. 6

 Si Diodes

Rectifier Diode: Characteristics Comparison

Type Features VF IR Trr Cost Rep. P/N Suitable Applications

General 1SRxxx General Rectifier

REC × ○ × ○
Purpose RRxxx Protect reverse connecting

× DANxxx Simple switching

SW Switching ○ △ △
1SSxxx Switch for MCU peripherals
High Speed RBxxx DC/DC converters
SBD (up to 200V) ○ × ○ × RSXxxx AC/DC converters
Low VF (secondary side)

High Speed RFxxx AC/DC converters

FRD (above 200V) × ○ ○ × Inverters

○: Good, △: Average, ×: Unsuitable

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 Si Diodes

Rectifier Diode: Characteristics Comparison

＜Reverse＞ ＜Forward＞ ＜Forward＞ ＜Reverse＞ ＜Reverse＞ ＜Forward＞

SBD Other Di Hi temp Lo temp

IF
IF This area = Loss IF

Trr
VR VF Time VR VF

High Speed
Di
Other Di IR
IR IR

Losses: lower efficiency, heating

Conduction losses： VF, IR, Trr
* Ohm’s low： Power(W) = Current×Voltage

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 Si Diodes: Schottky Barrier Diodes

Schottky Barrier Diode: Types and Characteristics

Use at hi
Metal VF IR Trr Suitable Applications
temp

Ultra low VF Ti ◎ × ○ × Battery control

Measure for undershoot

Low VF & IR
(Balanced)
Mo × △ ○ △ DC/DC converters

For high temp

Ultra low IR Pt △ ○ ○ ○ (ex. automotive

Other Diodes N/A × ◎ × ◎ General purpose

◎: Very good, ○: Good, △: Average, ×: Unsuitable

Barrier Metal
Ti： Titanium SBD characteristics are
Mo：Molybdenum different by the barrier metal.
Chip (Si)
Pt： Platinum

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 Si Diodes: Schottky Barrier Diodes

Schottky Barrier Diode: Types and Characteristics

IF Ti Mo Pt IR IR
Ti Ti
Mo
Other Di
Mo
Pt
Pt

Other Di
VF Other Di VR VF

Barrier Metal
Ti： Titanium
Mo：Molybdenum SBD characteristics are different
Chip (Si) by the barrier metal.
Pt： Platinum

© 2017 ROHM Co.,Ltd. P. 10

 Si Diodes: Schottky Barrier Diodes

SBD Characteristics and Application Examples

Cell/Smart phone Compact

DSC ① RBxx8 series (Ultra low IR)
IR ② RBQ series (Low IR)
④ ③ RBR series (Low VF)
RBxx1 series ④ RBE series (Ultra low VF)
1mA NEW RBE series

Batt
control
③ TV
Junction box
RBxx5/RBxx0 series
Under RBR series
② Solar panel
Development NEW RBQ series
1μA RBxx7 series
①
Under
Development
DC/DC converter
Power supply(100V) NEW
Note PC
RBxx8 series
Automotive Junction box Automotive
Power supply(100V)
Automotive(EV, HIV)
Power supply(200V)
Power
1nA Supply

0.3 0.4 0.5 0.6 0.7 0.8 0.9 VF

© 2017 ROHM Co.,Ltd. P. 11

 Si Diodes: Schottky Barrier Diodes

Usage Note: Thermal Runaway

Use at • Take care of thermal runaway by heating up
Met
IR Hi Automotive
al (strong relation with IR)
temp
• Diodes can be destroyed.
Ultra low VF Ti × × Don’t use • Thermal calculation & design must be required.
• Tj must not exceed Tj max
Low VF/Low IR • Tj=Ta＋self heat
Mo △ △ w/consideration
(Balanced) • Self heat=Thermal resistance x IR x VR
• Need to review heat dissipation with package,
Ultra low IR Pt ○ ○ w/consideration
PCB and ambient environment conditions.
Other diodes N/A ◎ ◎ w/consideration

◎: Very good, ○: Good, △: Average, ×: Unsuitable

IR IR Thermal Conditions Temp

Ti runaway
Destroyed
Heating > Dissipation Up
Mo Hi temp
Heating = Dissipation Constant
Pt
Low temp Heating < Dissipation Down
Other Di VR VR

© 2017 ROHM Co.,Ltd. P. 12

 Si Diodes: Fast Recovery Diode

Fast Recovery Diode: Types and Characteristics

VF IR Trr Use at hi temp Suitable Applications

PFC
Ultra high speed × ◎ ○ ○
(Continuous current mode)

High speed low VF

△ ○ ○ ○ General purpose
(Balanced)

PFC
Ultra low VF ○ △ ○ ○
(Boundary current mode)

Other Diodes ◎ × ○ ○ Diodesブリッジ

◎: Very good, ○: Good, △: Average, ×: Unsuitable

P
FRD characteristics
N depend on impurities in a semiconductor.

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 Si Diodes: Fast Recovery Diodes

Fast Recovery Diode: Types and Characteristics

IF IF

Time
Trade-off

VF IR

Trr (reverse recovery time) of FRD is a tread-off for a increase of VF.

© 2017 ROHM Co.,Ltd. P. 14

 Si Diodes: Fast Recovery Diodes

Fast Recovery Diode: Reverse Recovery Noise

Reverse Recovery Noises depend on the amount of IRp and dir/dt to recover.

IRp
dir/dt

Switching wave form

For improving these noises, need to make IRp lower and dir/dt slow down.

© 2017 ROHM Co.,Ltd. P. 15

 Si Diodes: Fast Recovery Diodes

Fast Recovery Diode: Reverse Recovery Noise

Reverse Recovery Noises depend on the amount of IRp and dir/dt to recover.
⇒ Improve IRp with a wafer process technology

P P

N- Epi N- Epi
Decrease surface
diffusive
concentration of
N+ Sub P diffusion layer N+ Sub

• IRp becomes small to decrease surface diffusive concentration of P diffusion layer.

• However, VF increases as a trade-off.

© 2017 ROHM Co.,Ltd. P. 16

 Si Diodes: Fast Recovery Diodes

Fast Recovery Diode: Reverse Recovery Noise

IRp
dir/dt
IRp
dir/dt

Switching wave form

• trr can be faster but the noises remains if only IRp is improved.
• VF has to increases as an exclusive event of IRp improvement.

© 2017 ROHM Co.,Ltd. P. 17

 Si Diodes: Fast Recovery Diodes

Fast Recovery Diode: Reverse Recovery Noise

Reverse Recovery Noises depend on the amount of IRp and dir/dt to recover.
⇒ Slow dir/dt down to decrease Pt diffusion (life time killer).

Actual reverse recovery wave form

M/標準
IF=15A
M/標準 -
di/dt=200A/μs
M/標準 VR=300V

Current / A
Tj=125℃
M/標準

M/標準

Switching wave form M/標準 M/標準 M/標準

Time / ns

• Achieve the soft recovery without change in ｔｒｒ and VF

© 2017 ROHM Co.,Ltd. P. 18

 Si Diodes: Fast Recovery Diodes
FRD Characteristics and Application Examples
trr For low power products (Up to 200W to 300W)

RFNL series
Ultra low VF

RFN series
Standard Industrial module

Server
RFUH series
Lighting

Tablet
RFV series
Lap top PC
High Speed
LCD-TV

Air conditioning For high power products (200W to 300W and more)

VF
© 2017 ROHM Co.,Ltd. P. 19
 Si Power Devices: Application Examples Utilizing the Merits

• Si Diodes
• Si Transistors
• Types, Characteristics, Comparison
- Bipolar, MOSFET, IGBT
• High Voltage MOSFETs
- Standard Super Junction MOSFET
- Low Noise Super Junction MOSFET
- High Speed Super Junction MOSFET
- Presto MOS High Speed trr Super Junction
MOSFET
- Hybrid MOS
• Criteria for Selecting a Transistor
• Application Examples Utilizing the Merits

© 2017 ROHM Co.,Ltd. P. 20

 Si Transistors

Types of Transistor
General

High Speed
Small signal Switching

BipolarTransistor Mid power RF Transistor

Power

100mA type
Transistor
Digital Transistor 500mA type

For muting

Small signal
MOSFET
Power

IGBT Power

© 2017 ROHM Co.,Ltd. P. 21

 Si Transistors
Types of Transistor

BipolarTransistor IGBT MOSFET

Collector Collector Collector Drain Drain

Base Base Gate Gate

Gate
Symbol

Emitter Emitter Source Source

Emitter
PNP NPN Nch Pch

Complicated Easy Easy

Driving
Current drive Voltage drive Voltage drive

Driving power Average Small Small

Switching time Slow (Electron + hole) Slow (Electron + hole) High Speed (Electron or hole)

Average
Temp stability Good Good
hFE up & VBE down

Higher voltage Easy Easy Need the structure changes

© 2017 ROHM Co.,Ltd. P. 22

 Si Transistors

Types of Transistor
Bipolar
Transistor
Non-connection
(Isolated)

Current flows
into Base No current flows
into Gate
Disappear
To Collector to
recombine

N-ch MOSFET Structure and Operation

Emitter current

No Current flows Current is channeled

Base
by Gate voltage
Reverse Forward
voltage current voltage
© 2017 ROHM Co.,Ltd. P. 23
 Si Transistor

Types of Transistor
IGBT

Non-connection
つながっていない Non-connection
(Isolated)
（絶縁されている） (C) (Isolated)

(G)

No GateにCurrentは
current flows (E) No current flows
流れない
into Gate into Gate

(E) (G) (E) (G)

N-ch MOSFET Structure and Operation

(C) (C) No Current flows Current is channeled

GateVoltageによりチャネルができ、
Current is channeled by Gate
Currentが流れる by Gate voltage
voltage

© 2017 ROHM Co.,Ltd. P. 24

 Si Transistors

Transistor: Basic Characteristics

BipolarTransistor IGBT MOSFET

Ic vs Vce characteristics Ic VS Vce characteristics Id VS Vds characteristics

© 2017 ROHM Co.,Ltd. P. 25

 Si Transistor

BipolarTransistor: Important Characteristics

Collector Absolute maximum rating for the voltage

VCEO[V]
between collector and emitter with open base
Base
Maximum collector current.
IC[A]
Maximum value of the current into collector.
Emitter
NPN
Maximum collector power dissipation.
PC[W] The product of VCE and IC.
The maximum power for the transistor.
Collector DC current amplification.
hFE
hFE=IC/IB.
Base
Maximum voltage between collector and emitter
VCE(sat) [V]
at arbitrary base current and collector current.
Emitter
PNP
Safe Operating Area. Transistor operating range
S.O.A （A.S.O）
without destruction and/or deterioration.

© 2017 ROHM Co.,Ltd. P. 26

 Si Transistors

MOSFET: Important Characteristics

VDSS[V] Maximum voltage between drain and source.

Drain
VGS(th) Gate on threshold Voltage.

Gate RDS(on) On-resistance between drain and source.

Power dissipation.
Source PD[W]
Allowable maximum power depending on Ta and Tc.
P-ch
Maximum drain current depending on on-resistance
ID[A]
and power dissipation.
Drain Capacitance of between terminals.
Ciss, Coss, Crss
Affect to switching speed.
Gate Time for on or off.
tr,td(on), tf,td(off)
Depends on a current.
Source
Electric charge to turn on.
Qg, Qgs, Qgd
N-ch
Affect to switching speed.
Safe Operating Area. Transistor operating range
S.O.A（A.S.O）
without destruction and/or deterioration.

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 Si Transistors

IGBT: Important Characteristics

Absolute maximum rating for the voltage between
VCES[V]
collector and emitter with open base
Maximum collector current.
IC[A]
Maximum value of the current into collector.
Maximum collector power dissipation.
Collector
P[W] The product of VCE and IC.
The maximum power for the transistor.
Gate
Maximum voltage between collector and emitter
VCE(sat)[V]
at arbitrary gate voltage and collector current.
Emitter Capacitance of between terminals.
Ciss,Coss,Crss
Affect to switching speed.
Time for on or off.
tr,td(on),tf,td(off)
Depends on a current.
Electric charge to turn on.
Qg,Qge,Qgc
Affect to switching speed.
Safe Operating Area.
S.O.A（A.S.O） Transistor operating range without destruction and/or
deterioration.
© 2017 ROHM Co.,Ltd. P. 28
 Si Transistors

Power Transistors: Features and Application Coverage

100k

IGBT SiC MOS

Power(VA)

10k

1k
Si MOS
（Planar /Super Junction）
100

10k 100k 1M Frequency(Hz)

Si MOSFET IGBT SiC-MOS

Voltage Voltage Voltage

Ron SW Ron SW Ron SW

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 Si Transistors

Planar MOSFET vs Super Junction MOSFET

Planar MOSFET Super Junction MOSFET

Gate Gate
Source SiO2 Source
SiO2

Reduced RDS(on) to 50%

N+ P P P
P

pass
Current
Reduced Qg 40%

Resistivity ratio = 5:1 N+ SUB

N+ SUB
Drain Drain

© 2017 ROHM Co.,Ltd. P. 30

 Si Transistor

Planar MOSFET vs Super Junction MOSFET

Super Junction MOSFET

‘irr=12.6A
‘irr=14.1A
Planar MOSFET

Super Junction structure has larger PN junction areas

than a planar MOSFET and also has a larger irr and a faster trr.

© 2017 ROHM Co.,Ltd. P. 31

 Si Transistors

High Voltage Super Junction MOSFET: Types and Features

Low Noise

Standard SJ MOSFET AN series EN series

400V/500V 600V/650V
600V/800V 800V

High Speed SJ MOSFET KN series

Low Ron 600V

Presto MOS FN series MN series
High Speed trr SJ MOSFET
500V/600V 600V

Hybrid MOS GN series

600V

Note : Products under development may be included in . Please contact us if you have any request.

© 2017 ROHM Co.,Ltd. P. 32

 Si Transistors
- AN series -
Standard Super Junction MOSFET

Background of development: Greatly reduce Ron and Qg for planar MOSFETs

Planar MOSFET Super Junction MOSFET

Source Gate SiO Source Gate
2
SiO2
Reduced RDS(on) to 50%
N+ P P P
P
Reduced Qg to 40%

pass
Current
N+ SUB Resistivity ratio = 5:1 N+ SUB
Drain Drain

Existing RDX series

Reduced
Reduced Qg to
RDS(on) to 40%
50% NEW

Existing

NEW R50xx-6 - R60xx series

© 2017 ROHM Co.,Ltd. P. 33

 Si Transistors
- EN series -
Low Noise Super Junction MOSFET

Background of development: Improvement of the noises due to the high speed

characteristics to utilize super junction MOSFET’s low Ron and high speed.

•Combined low noise characteristics of planar MOS with low Ron of SJ MOS characteristics.
•Replace and improve planar MOS with lower Ron.

Planar MOS SJ MOS AN series

●
Noise
Comparison ■Company A
・Low Noise ・High speed switching
■AN series
・Low Ron
■EN series

SJ MOS > Low Noise

EN series > Low Ron

A x Ron 100

Comparison 65% 80%

Reduced Reduced
（TO-220） 10
0
35
20
Planar AN EN

© 2017 ROHM Co.,Ltd. P. 34

 Si Transistors
- KN series -
High Speed Super Junction MOSFET
Background of development: Need for high speed switching MOSFET keeping
low noise performance.
• Emphasized high speed performance and low Ron.
• Improved switching performance reducing Rg and Qgd.
• Increase efficiency to reduce switching loss.

Reduced Gate resistance Rg Reduced gate-drain charge Qgd Keep low noise performance

M/標準 15 RADIATED EMISSION H(dBµV/m)

100V/60Hz Input Power 146W
LIMIT
EN series EN series（Low Noise）
M/標準
KN series（Low Noise/High Speed switching
Reduced Qgd Company A standard type
10
Vgs[V]

M/標準
Rg[Ω]

5
M/標準
EN series
KN series
M/標準
0
M/標準
M/標準
M/標準
M/標準
M/標準
M/標準
M/標準
M/標準
M/標準
M/標準
M/標準

0 20 40 60 80 100
ID[A] Qg[nC]
Target of KN series

© 2017 ROHM Co.,Ltd. P. 35

 Si Transistors
TM
- FN series -
Presto MOS High Speed trr Super Junction MOSFET

Background of development: Need to eliminate external diodes and to

improve efficiency of diodes in inverter circuits using to combine MOSFET,
IGBT and diodes

• Improved trr characteristics of a parasitic diode in SJ MOSFET.

■ Operations of high Vin inverter circuit with a power supply ■ Comparisons with existing devices

・with SJ MOS ・with IGBT

Collector PrestoMOS
trr
IF SJMOS IGBT Drain
FRD
Gate
ｔ

Forward Regenerated
current current
Emitter Source

Id Is
Reduced IGBT FRD
60% of loss
IF
PrestoMOS
ｔ

PrestoMOS
Regenerated Forward
current current
V V

© 2017 ROHM Co.,Ltd. P. 36

 Si Transistors
- MN series -
TM
Presto MOS High Speed trr Super Junction MOSFET

Background of development: More to improve efficiency of inverter circuits

with the following issues
• Eliminating external FRD
• Reducing Qg
• Efficiency of inverter circuits
• trr characteristics of a parasitic diode in SJ MOSFET
A・Ron Ron・Qg trr
100 100
100
90 90 90
32％ Down
80 80 80
59％ Down
70 70 70
60 60 60
50 50 50
40 40 40
30 30 30
20 20 20 Keep
10 10 10 High Speed trr
0 0 0
FN MN FN MN FN MN

Note : Products under development may be included in . Please contact us if you have any request.

© 2017 ROHM Co.,Ltd. P. 37

 Si Transistors
- GN series -
Hybrid MOS -New Structure SJ MOSFET-

Background of development: Need for higher power transistor keeping

switching speed like MOSFET, based on energy saving and high efficiency
requirements in market.

Coverage

IGBT⇒Hybrid-MOS
MOSFET IGBT
Low Ron at high
High speed switching
current
100 IGBT MOSFET⇒Hybrid-MOS Low Ron at low
Tolerance for thermal
k current
runaway

Hybrid-MOS
Power(VA)

10k

1k
ROHM’s Proprietary, the Would First

100
MOSFET Hybrid MOSFET
The best of both MOSFET and IGBT

10k 100 1M
k
Frequency(Hz
)

© 2017 ROHM Co.,Ltd. P. 38

 Si Transistors
- GN series -
Hybrid MOS -New Structure SJ MOSFET-

Comparison with Super Junction MOSFET Comparison with IGBT

• Reduced 62% of Ron at high current • No tail current
operation （Tj=125℃） • Allow high speed switching
• Few Ron fluctuations for temperature raise
VDS(V)

14 SJ-MOS
R6020ANX
12 IGBT Off Wave Form Hybrid MOS Off Wave Form
Hybrid-MOS
Reduced R6035GNX Ic Iｄ
10
62% of Ron
（Tj=125℃） Tj=125℃
8
VG VG

6 Vce Vds

4 Tj=25℃
G G
With tail current No tail current
2 Few Ron
fluctuations
0 ID(A)
0 10 20 30 40 50

© 2017 ROHM Co.,Ltd. P. 39

 Si Transistors
- GN series -
Hybrid MOS -New Structure SJ MOSFET-

Evaluation Results: Efficiency of PFC Circuit in Air Conditioning

Switching loss reduction Conduction loss reduction

98.00%

At Low load At High load

97.50%
Efficiency

97.00%

R6035GNX (Hybrid-
MOS600V/35A)
96.50% R6021ANZ
(SJ-MOS 600V/21A)
RGTH50TS65D
(IGBT 650V/50A)
96.00%
0 500 1000 1500 2000 2500
Input Power (W)

© 2017 ROHM Co.,Ltd. P. 40

 Si Transistors
Characteristics Comparison of Super Junction MOSFETs
Comparison of Maximum ID （TO-220 package）
RDS(on) Qg
VDSS ID trr
Series Features Part.No Typ.(Ω) Typ.(nC)
(V) (A) Typ. (ns)
Vgs=10V Vgs=10V

AN Standard R6020ANX 600 20 0.17 65

EN Low Noise Low RDS(on) R6030ENX 600 30 0.115 85 660

High Speed Switching Low Qg
KN R6030KNX 600 30 0.115 57
Low RDS(on)
FN Presto MOS High Speed trr R6020FNX 600 20 0.19 65 105

MN Presto MOS High Speed trr, Low Ron R6030MNX 600 30 0.11 45 92

GN Hybrid MOS R6035GNX 600 35 0.11 40

Comparison of Products with ID=20A（TO-220 package）

RDS(on) Qg
VDSS ID trr
Series Features Part.No Typ.(Ω) Typ.(nC)
(V) (A) Typ. (ns)
Vgs=10V Vgs=10V

AN Standard R6020ANX 600 20 0.17 65

EN Low Noise Low RDS(on) R6020ENX 600 20 0.17 60 550

High Speed Switching Low Qg
KN R6020KNX 600 20 0.17 40
Low RDS(on)
FN Presto MOS High Speed trr R6020FNX 600 20 0.19 65 105

MN Presto MOS High Speed trr, Low Ron N/A

GN Hybrid MOS R6020GNX 600 20 0.24 20

© 2017 ROHM Co.,Ltd. P. 41

 Si Transistors

Reference：AN series Standard Super Junction MOSFET

500V Series 600V Series

RDS(on)[Ω] RDS(on)[Ω]
Part No. Package VDSS[V] ID[A] at 10V Part No. Package VDSS[V] ID[A] at 10V
Typ. Typ.
R5021ANX 21 0.16 R6046ANZ TO247 46 0.069
R5019ANX 19 0.18 R6046ANZ 46 0.065
R5016ANX 16 0.21 R6025ANZ 25 0.12
TO3PF
R5013ANX 13 0.29 R6020ANZ 20 0.17
TO220FM
R5011ANX 11 0.38 R6015ANZ 15 0.23
R5009ANX 9 0.55 R6020ANX 20 0.17
R5007ANX 7 0.75 R6015ANX 15 0.23
R5005CNX 500 6 0.9 R6012ANX 12 0.32
TO220FM
R5021ANJ 21 0.16 R6010ANX 10 0.43
600
R5016ANJ 16 0.21 R6008ANX 8 0.6
R5013ANJ 13 0.29 R6006ANX 6 0.85
R5011ANJ LPTS 11 0.38 R6020ANJ 20 0.19
R5009ANJ 9 0.55 R6015ANJ 15 0.23
R5007ANJ 7 0.78 R6012ANJ LPTS 12 0.32
R5005CNJ 5 1.2 R6010ANJ 10 0.43
R5207AND 7 0.78 R6008ANJ 8 0.6
CPT3 525
R5205CND 5 1.2 R6006AND 6 0.9
SOP8 CPT3
SP8K80 500 0.5 9 R6004CND 4 1.4
(Dual)

Note : Products under development may be included in . Please contact us if you have any request.

© 2017 ROHM Co.,Ltd. P. 42

 Si Transistors

Reference：AN series Standard Super Junction MOSFET

800V Series
RDS(on) Qg
VDSS ID
Part No. PKG Typ.(Ω) Typ.(nC)
(V) (A)
Vgs=10V Vgs=10V
R8001CND CPT3 1 6.7 7.2
800
R8002CND D-pack 2 3.3 12.7
R8005AND3 TO252 5 1.6 21
800
R8007AND3 D-pack 7 1.05 28
R8002ANJ 2 3.3 12.7
LPT
R8005ANJ 800 5 1.6 21
D2-pack
R8008ANJ 8 0.79 39
R8002ANX 2 3.3 12.7
R8005ANX 5 1.6 21
TO220FM 800
R8008ANX 8 0.79 39
R8010ANX 10 0.43 62
R8012ANZ1 12 0.35 78
TO247 800
R8016ANZ1 16 0.23 115

Note : Products under development may be included in . Please contact us if you have any request.

© 2017 ROHM Co.,Ltd. P. 43

 Si Transistors

Reference：EN series Low Noise Super Junction MOSFET

600V Series
RDS(on) (Ω) Qg (nC) RDS(on) (Ω) Qg (nC)
VDSS ID VDSS ID
PKG Part No. Vgs=10V Vgs=10V PKG Part No. Vgs=10V Vgs=10V
(V) (A) (V) (A)
Typ. MAX Typ. Typ. MAX Typ.
CPT3 R6002END 1.7 2.8 3.4 6.5 R6015ENZ 15 0.26 0.29 40
600
D-pakR6004END 4 0.9 0.98 15 R6020ENZ 20 0.17 0.196 60
R6007END3 7 0.57 0.62 20 TO3PF R6024ENZ 600 24 0.15 0.165 70
TO252E
R6009END3 600 9 0.5 0.535 23 R6030ENZ 30 0.115 0.130 85
D-pak
R6011END3 11 0.34 0.39 32 R6035ENZ 35 0.095 0.102 110
R6004ENJ 4 0.9 0.98 15 R6020ENZ1 20 0.17 0.196 60
R6007ENJ 7 0.57 0.62 20 R6024ENZ1 24 0.15 0.165 70
R6009ENJ 9 0.5 0.535 23 TO247 R6030ENZ1 30 0.115 0.130 85
LPT 600
R6011ENJ 600 11 0.34 0.39 32 R6035ENZ1 35 0.095 0.102 110
D2-pak
R6015ENJ 15 0.26 0.29 40 R6047ENZ1 47 0.066 0.072 145
R6020ENJ 20 0.17 0.196 60 R6076ENZ1 76 0.038 0.042 260
R6024ENJ 24 0.15 0.165 70
※ 800V Series are under development.
R6004ENX 4 0.9 0.98 15
R6007ENX 7 0.57 0.62 20
R6009ENX 9 0.5 0.535 23
R6011ENX 11 0.34 0.39 32
TO220FM 600
R6015ENX 15 0.26 0.29 40
R6020ENX 20 0.17 0.196 60
R6024ENX 24 0.15 0.165 70
R6030ENX 30 0.115 0.130 85

Note : Products under development may be included in . Please contact us if you have any request.

© 2017 ROHM Co.,Ltd. P. 44

 Si Transistors

Reference：EN series Low Noise Super Junction MOSFET

650V Series
RDS(on) (Ω) Qg (nC) RDS(on) (Ω) Qg (nC)
VDSS ID VDSS ID
PKG Part No. Vgs=10V Vgs=10V PKG Part No. Vgs=10V Vgs=10V
(V) (A) (V) (A)
Typ. MAX Typ. Typ. MAX Typ.
CPT3 R6502END 1.7 3.10 3.57 6.5 R6515ENZ 15 0.290 0.335 40
650
D-pakR6504END 4 0.99 1.14 15 R6520ENZ 20 0.190 0.220 60
R6507END3 7 0.63 0.725 20 TO3PF R6524ENZ 650 24 0.165 0.190 70
TO252E
R6509END3 650 9 0.55 0.64 23 R6530ENZ 30 0.130 0.150 85
D-pak
R6511END3 11 0.375 0.435 32 R6535ENZ 35 0.102 0.118 110
R6504ENJ 4 0.99 1.14 15 R6520ENZ1 20 0.190 0.220 60
R6507ENJ 7 0.63 0.725 20 R6524ENZ1 24 0.165 0.190 70
R6509ENJ 9 0.55 0.64 23 TO247 R6530ENZ1 30 0.130 0.150 85
LPT 650
R6511ENJ 650 11 0.375 0.435 32 R6535ENZ1 35 0.102 0.118 110
D2-pak
R6515ENJ 15 0.290 0.335 40 R6547ENZ1 47 0.073 0.084 145
R6520ENJ 20 0.190 0.220 60 R6576ENZ1 76 0.042 0.049 260
R6524ENJ 24 0.165 0.190 70
R6504ENX 4 0.99 1.14 15 ※ 800V Series are under development.
R6507ENX 7 0.63 0.725 20
R6509ENX 9 0.55 0.64 23
R6511ENX 11 0.375 0.435 32
TO220FM 650
R6515ENX 15 0.290 0.335 40
R6520ENX 20 0.190 0.220 60
R6524ENX 24 0.165 0.190 70
R6530ENX 30 0.130 0.150 85

Note : Products under development may be included in . Please contact us if you have any request.
© 2017 ROHM Co.,Ltd. P. 45
 Si Transistors

Reference：KN series High Speed Super Junction MOSFET

600V Series
RDS(on) (Ω) Qg (nC) RDS(on) (Ω) Qg (nC)
VDSS ID VDSS ID
PKG Part No. Vgs=10V Vgs=10V PKG Part No. Vgs=10V Vgs=10V
(V) (A) (V) (A)
Typ. MAX Typ. Typ. MAX Typ.
CPT3 R6002KND 1.7 2.8 3.4 4.5 R6015KNZ 15 0.26 0.29 27
600
D-pakR6004KND 4 0.9 0.98 10 R6020KNZ 20 0.17 0.196 40
R6007KND3 7 0.57 0.62 14 TO3PF R6024KNZ 600 24 0.15 0.165 47
TO252E
R6009KND3 600 9 0.5 0.535 16 R6030KNZ 30 0.115 0.130 57
D-pak
R6011KND3 11 0.34 0.39 22 R6035KNZ 35 0.095 0.102 74
R6004KNJ 4 0.9 0.98 10 R6020KNZ1 20 0.17 0.196 40
R6007KNJ 7 0.57 0.62 14 R6024KNZ1 24 0.15 0.165 47
R6009KNJ 9 0.5 0.535 16 TO247 R6030KNZ1 30 0.115 0.130 57
LPT 600
R6011KNJ 600 11 0.34 0.39 22 R6035KNZ1 35 0.095 0.102 74
D2-pak
R6015KNJ 15 0.26 0.29 27 R6047KNZ1 47 0.066 0.072 97
R6020KNJ 20 0.17 0.196 40 R6076KNZ1 76 0.038 0.042 174
R6024KNJ 24 0.15 0.165 47 ※ 800V Series are under development.
R6004KNX 4 0.9 0.98 10
R6007KNX 7 0.57 0.62 14
R6009KNX 9 0.5 0.535 16
R6011KNX 11 0.34 0.39 22
TO220FM 600
R6015KNX 15 0.26 0.29 27
R6020KNX 20 0.17 0.196 39
R6024KNX 24 0.15 0.165 47
R6030KNX 30 0.115 0.130 57

Note : Products under development may be included in . Please contact us if you have any request.

© 2017 ROHM Co.,Ltd. P. 46

 Si Transistors

Reference：FN/MN series Presto MOS

TM

High Speed trr Super Junction MOSFET

600V FN Series 600V MNS series

RDS(on) Qg RDS(on) Qg
VDSS ID trr Typ. VDSS ID trr
PKG Part.No Typ.(Ω) Typ.(nC) PKG Part.No Typ.(Ω) Typ.(nC)
(V) (A) (ns) (V) (A) Typ. (ns)
Vgs=10V Vgs=10V Vgs=10V Vgs=10V
LPT R6008FNJ 8 0.73 20 67 R6007MND
600 7 0.54 10 65
D2-pack R6012FNJ 12 0.39 35 75 TO252 3
600
R5009FNX 9 0.65 18 78 D-packR6010MND
10 0.27 20 70
3
R5011FNX 500 11 0.4 30 85
TO220FM R6030MNX 600 30 0.11 45 92
TO220FM R5016FNX 16 0.22 45 100
TO3PF R6047MNZ 600 47 0.07 75 105
R6008FNX 8 0.73 20 67
R6047MNZ1 47 0.07 75 105
R6012FNX 12 0.39 35 75 TO247 600
600 R6076MNZ1 76 0.04 120 135
R6015FNX 15 0.27 42 90
R6020FNX 20 0.2 65 105
R6025FNZ 25 0.14 85 120
TO3PF 600
R6046FNZ 46 0.075 150 145
R6025FNZ1 25 0.14 85 120
TO247 600
R6046FNZ1 46 0.075 150 143

Note : Products under development may be included in . Please contact us if you have any request.

© 2017 ROHM Co.,Ltd. P. 47

Si Power Devices: Application Examples Utilizing the Merits

• Si Diodes
• Si Transistors
• Criteria for Selecting a Transistor
- Application Criteria
① Measure actual current and voltage wave
form
② Always within absolute maximum ratings?
③ Within SOA?
④ Within SOA derated by the ambient
temperature at actual use?
⑤ Single pulse or continuous pules?
⑥ Is the average power dissipation within
the rated power at the ambient
temperature?
⑦ Is the junction temperature within 150℃?
⑧ Criteria for selecting a transistor
• Application Examples Utilizing the Merits
© 2017 ROHM Co.,Ltd. P. 48
 Criteria for Selecting a Transistor

Transistor Application Criteria Flow Chart

① Measure actual current and voltage wave form
Yes
No
② Always within absolute maximum ratings?

Yes
No
③ Within SOA (Safety Operating Area)?

Yes
④ Within SOA derated by the ambient temperature No
at actual use?
N
Yes Yes
⑤ Single pulse? ⑤ Continuous pules?
G
Yes
⑥ Is the average power
Yes dissipation within the rated No
power at the ambient
temperature?

Yes
OK

© 2017 ROHM Co.,Ltd. P. 49

 Criteria for Selecting a Transistor
① Measure actual current and voltage wave form
・Observe voltages and currents for transistor by an oscilloscope
・Need to be within the specifications

Ex. Switching wave form of

the R6020ENZ*

（*EN series Low Noise SJ MOSFET）

OFF to ON ON to OFF

ID:5A/div 100ns/ 200ns/

VDS:100V/div div ID:5A/div div
VGS:5V/div VDS:100V/div
Power VGS:5V/div
Power

Take magnified wave form of off to on and on to off to calculate switching power losses.

© 2017 ROHM Co.,Ltd. P. 50

 Criteria for Selecting a Transistor
② Always within absolute maximum ratings?
・To check the voltages and currents data are within the abs max ratings of the data sheet.
・Unacceptable to exceed the abs max even if momentary inrush currents or voltage surges.

Ex. R6020ENZ Abs Max Ratings

← Is VDS within 600V?

← Is ID within 20A?

← Is IDP within 60A?

← Is PD within 120W? Review to

← Is Tj within 150℃? calculate later

© 2017 ROHM Co.,Ltd. P. 51

 Criteria for Selecting a Transistor
③ Within SOA (Safety Operating Area)?
・Confirm SOA.
・Note that SOA applies single pules condition only.
・In case of continuous pules condition, requires that all continuous pluses are within the
SOA and the average input power must be lower than the rated power.

Ex. R6020ENZ SOA data

OFF to ON ON to OFF

© 2017 ROHM Co.,Ltd. P. 52

 Criteria for Selecting a Transistor
SOA Destruction
・Destruction mode that a local heating momentary occurs and destroys a transistor when over
currents and voltages are applied due to unoccur short-circuit condition in normal operation.
・Destruction mode by thermal runaway exceeding the Tj max due to uninterrupted heating with
unmatched thermal design or higher continuous pulse frequency.

Limited by heating Source side

Limited by secondary
breakdown

Drain side

© 2017 ROHM Co.,Ltd. P. 53

 Criteria for Selecting a Transistor
SOA Graph
Limited by heating
IDpules value
Limited by
secondary breakdown

ID=VDS/RDS(ON)
R6020EN:RDS(ON)=170mΩ
Ex.
0.588A=0.1V/170mΩ
5.88A=1V/170mΩ

Ta=25℃

Single Pulse

Limited by VDSS

© 2017 ROHM Co.,Ltd. P. 54

 Criteria for Selecting a Transistor

④ Within SOA derated by the ambient temperature at actual use?

・Temperature derating is required when the chip temperature is raised by self heating or the
ambient temperature is more than 25℃ because the SOA temperature condition is just 25℃.

Ex. SOA Derating （Left：Bipolar transistor, Right：MOSFET）

Thermal
limited area Derating for max current
due to Ron raise
Secondary
breakdowm
area

Derated
Derated SOA line at 25℃
Derated SOA line

© 2017 ROHM Co.,Ltd. P. 55

 Criteria for Selecting a Transistor

SOA Derating

100V x 45A = 4500W

↓
When Tj=75℃, derate to PD = 60%
↓
4500W x 60% =2700W
↓
At Tj=75℃, 100V x 27A

© 2017 ROHM Co.,Ltd. P. 56

 Criteria for Selecting a Transistor
⑥ Is the average power dissipation within the rated power at
the ambient temperature? *1 * Assumes the answer for “⑤ Single pulse or continuous pules?” is “continuous”

・”Within the rated power at ambient temperature” means that the chip temperature is
less than 150℃ as the abs max rating.
・The rated power is defined as the power at 150℃ of chip temperature.
・Basically average power is that a value divided the integral of the product of current and
voltage with time by time.

Voltage
Current

Voltage loss at ON
(Ron, VCE(SAT))

ON period OFF

Period: T

For the above switching operation:

© 2017 ROHM Co.,Ltd. P. 57

 Criteria for Selecting a Transistor
⑥ Is the average power dissipation within the rated power at
the ambient temperature?
Ex. R6020ENZ switching wave form
OFF to ON

ID:5A/div 100ns/ Sum of the integral (E) of each period from OFF
div
VDS:100V/div to ON to OFF and divide it by a period (T), them
VGS:5V/div
Power
the average power dissipation can be derived.

Integral equation for OFF to ON / ON to

OFF
ON to OFF

200ns/
ID:5A/div div
VDS:100V/div
VGS:5V/div
Power

© 2017 ROHM Co.,Ltd. P. 58

 Criteria for Selecting a Transistor
⑥ Is the average power dissipation within the rated power at
the ambient temperature?

・The example was for MOSFET.

The average power dissipation
can be calculated, for the
digital transistor, by IO and VO,
for bipolar transistor, by IC and
VCE, to integrate them.

・Check that the average power

is within the drain loss
(collector loss for bipolar
Transistor) in the data sheet.

© 2017 ROHM Co.,Ltd. P. 59

 Criteria for Selecting a Transistor

⑦ Is the junction temperature within 150℃?

・The Tj of transistor must be always below 150℃.
・The operating life will shorten extremely if Tj exceeds 150℃ (recommendation: 100℃).
In the worst case, degradation and/or destruction may occur.
・Tj can be calculated from thermal resistance, ambient temperature and power
dissipation.

Ambient temperature (at the measurement room)

Junction to ambient thermal resistance
Power dissipation

© 2017 ROHM Co.,Ltd. P. 60

 Criteria for Selecting a Transistor
How to calculate Tj from Tc?
・Tj can be calculated from ambient temperature, thermal resistance, and power dissipation.
Heat sink
Case temperature
Ex. TO-220
(Temp between package and heat sink)

Heat

Heat
Chip Ambient
: Case temperature Radiate to Chip
Temp
ambient
: Junction to case thermal resistance
: Power dissipation
Package Heat Sink

Rth(c-a): Thermal resistance of heat sink

* To be zero with infinite heat sink.

・Rth(j-c) is originally used for through-hole devices like TO-220 mounting on a heat sink.
・In this case, Tj can be precisely calculated to measure Tc at a main radiation path between
case to heat sink.
・Assuming to use an ideal heat sink (infinite heat sink), calculating with conditions such as
Tc=Ta=25℃ will be available.
・Thermal resistance of infinite heat sink: Rth(c-a)=0, therefore, Rth(j-a)=Rth(j-c).

© 2017 ROHM Co.,Ltd. P. 61

Si Power Devices: Application Examples Utilizing the Merits

• Si Diodes
• Si Transistors
• Criteria for Selecting a Transistor
• Application Examples Utilizing the Merits
• Active PFCs
- 2 types of PFC control mode (BCM/CCM）
- Efficiency improvement of BCM circuit
- Efficiency improvement of CCM circuit
- Reference: Interleave scheme
• LED lighting system: Efficiency Comparison by
MOSFETs
• Utilizing merits of the Hybrid MOS

© 2017 ROHM Co.,Ltd. P. 62

Application Examples: PFC
General PFC
FRD or
SiC diode

MOSFET or
IGBT
Interleaved PFC

© 2017 ROHM Co.,Ltd. P. 63

Application Examples: PFC

PFC Circuit Example (simulation circuit)

D7
FRD or SiC diode
47u D1
10m

L1 R13 SCS210AM
D2
Iin

R6007ENX Vo
BD8693 beta DRF051VA1S 10
VDD VDD1 U2
Vin VOUT 470 R10

MOSFET or IGBT
GNDNC1 D9
Q1
18 NC3 NC2 R6
V4 15k
D3
R15
V3
3.3Meg 125
R8 C4 R2
637k 560u IC=200
C6 R1
100n IC=100
D4 47m
R9
PFC CCM 200kHz
Iref Vcs1 U3
VOUT
REF 1e6
150k GND 2SK3018 LAP1
R7
D5
Q11

33k
R3
1T 5
R11 22k V1
R12

© 2017 ROHM Co.,Ltd. P. 64

Application Examples: PFC

Interleaved PFC Circuit (simulation circuit)

FRD or SiC diode

D6

D1
10m

L1 R2 SCS210AM

10m

L2 R13
D7
D2 Vo
SCS210AM
BD8693 beta R6015ENX
DRB160M-30
VDD VDD1 U2
Vin VOUT R10
GNDNC1 D9
Q1
15 NC3 NC2 R6
V4 15k
D3
R15
5 Sine(0 141.421 50 0 0)
V3 3.3Meg
R8 R6015ENX C4 125
D4 637k 470u IC=250 R12
R1
82m
R9 Q6
C6
100n PFC inter
Iref Vcs1 U1
VOUT
REF
GND
Vcs2
VOUT2
150k
R7 13k
R3
1T
R11 DRB160M-30
D5 BD8693 beta
VDD VDD1 U3 R4
Vin VOUT D8
GNDNC1 R5
NC3 NC2 82m
15k R26
R31

MOSFET or IGBT

© 2017 ROHM Co.,Ltd. P. 65

Application Examples： 2 Types of PFC control mode

BCM vs CCM: Current Wave Form Comparison

Boundary Current Mode（BCM） Continuous Current Mode（CCM）

Current Current

• Current goes to 0A • Continuous current flow

• Larger peak current • Smaller peak current
• Variable frequency • Fixed frequency
• Small affect of diode ｔｒｒ • Large affect of diode ｔｒｒ

© 2017 ROHM Co.,Ltd. P. 66

Application Examples： 2 Types of PFC control mode

Output Power vs Peak Current by Control Mode

Interleaved
BCM

CCM
BCM
Interleaved
CCM

For high output power circuits, CCM is commonly used.

© 2017 ROHM Co.,Ltd. P. 67

Application Examples： Efficiency Improvement in PFC BCM

55 in. LCD-TV PFC with BCM

D2
FRD

P1
D1
Icoil 50m 390V
Vo
2Meg R5
R7

S1
V1 D3 C3 22k TX1
R12 D6
D4

C4 540k
3.3u R15 10k
R9 C2 1.6k
D5 C1
L6562A beta 154u IC=384 R1
1u IC=0
INV VCC U1 10
COMPGD
MULTGND R13 Q1
CS ZCD 10k 2.325Meg
R4 R11

15k
R2 1K 47m 15k
C5 R8 R3 R10
22u

100

R6

2.5V LAP1
1

NOTE:
Information here is just for you reference and you can use.
Actual evaluation and testing for products and circuits must be done on your own responsibility, if any product in this reference document is adopted to your design.
Regarding use of information here, ROHM shall have no liability for any damage of any kind including injures to any parties.

© 2017 ROHM Co.,Ltd. P. 68

Application Examples： Efficiency Improvement in PFC BCM

PFC BCM: Diode Loss Simulation Results

PFC BCM Diode Loss Simulation Results （100W 60Hz）

RFNL10TJ6S RFV08TJ6S
Low VF High Speed trr
For PFC BCM, loss of low
Input Power VF diode is smaller
0.23W 0.41W
100W

Abs Max Ratings/Electrical Characteristics

RFNL10TJ6S RFV8TJ6S Unit
VRM 600 600 V
IF 10 8 A
IFSM 120 60 A
VF 1.25 (@IF=8A) 3 (@IF=8A) Vmax
IR 10 10 µA
Trr 65 20 ns max

© 2017 ROHM Co.,Ltd. P. 69

Application Examples： Efficiency Improvement in PFC BCM

PFC BCM: Diode Loss Simulation Results (input: 100W)

Diode Loss (RFNL10TJ6S)： 0.23W

562.9737u 16.77501m
16.21204m

5
Icoil / A/ A

4
3
Icoil

2
1
0
-1
/ W/ W

50

40
(D1)
Power(D1)

30

20
Power

10

385 -1.057443

384
Vo Vo/ /VV

383 383.12296

382 382.06551

381
2 4 6 8 10 12 14 16
REF A
Time/mSecs 2mSecs/div
NOTE:
Information here is just for you reference and you can use.
Actual evaluation and testing for products and circuits must be done on your own responsibility, if any product in this reference document is adopted to your design.
Regarding use of information here, ROHM shall have no liability for any damage of any kind including injures to any parties.

© 2017 ROHM Co.,Ltd. P. 70

Application Examples： Efficiency Improvement in PFC BCM

PFC BCM: Diode Loss Simulation Results (input: 100W)

Diode Loss (RFV8TJ6S): 0.41W
5
Vo / V Power(D1) / W Icoil / A
Icoil / A

2
-1
Power (D1) / W

40
20
0
386
384
Vo / V

382
380
2 4 6 8 10 12 14 16 18

Time/mSecs 2mSecs/div
NOTE:
Information here is just for you reference and you can use.
Actual evaluation and testing for products and circuits must be done on your own responsibility, if any product in this reference document is adopted to your design.
Regarding use of information here, ROHM shall have no liability for any damage of any kind including injures to any parties.

© 2017 ROHM Co.,Ltd. P. 71

Application Examples： Efficiency Improvement in PFC CCM

Efficiency vs FRD Trr

Slower trr makes loss increase

Ｔｒｒ(ns)
in case that a low VF FRD is used
for CCM

Conditions:
CCM
連続モード Po=300W swF=200kHz Vin=115Vrms Vo=390V
Diode Characteristics and Efficiency
Io (A) VF (V) trr (ns) Efficiency (%)
RFNL10TJ6S 10 1.1 100 89.10
RFV8TG6S 8 2.3 25 93.59
RFVS8TG6S 8 2.5 20 93.87

For CCM, Choosing a FRD with faster trr is significant to improve efficiency.

© 2017 ROHM Co.,Ltd. P. 72

Application Examples： Efficiency Improvement in PFC CCM

Diode trr Affects in PFC CCM

5
Affects of FRD Trr
Current（A)

0
I diode / A

-5
FRD

-10

-15

-20
Current（A)

20
Affects of FRD Trr
MOSFET

make losses at
I mosfet / A

15

10 MOSFET on increase
5

-0
4.12 4.13 4.14 4.15 4.16 4.17 4.18

Time/mSecs 10uSecs/div

© 2017 ROHM Co.,Ltd. P. 73

Application Examples： Interleaved PFC (Reference)
D7

Iin
D2
47u

L1
10m

R13
D1

SCS210AM
General PFC
Vo

R6024ENX
BD8693 beta R6007ENX
DRF051VA1S 10
VDD VDD1 U2
Vin VOUT 470 R10
GNDNC1 D9
Q1
18 NC3 NC2 R6

600V 24A
V4 15k
D3

MOSFET Loss
R15
V3
3.3Meg 125
R8 C4 R2

Rds(on) = 0.15Ω
637k 560u IC=200

13.5W
C6 R1
100n IC=100
D4 47m
R9
PFC CCM 200kHz
Iref Vcs1 U3
VOUT
REF 1e6
150k GND 2SK3018 LAP1
R7
D5
Q11

33k
R3
1T 5
R11 22k V1
R12

D6

Interleaved PFC
D1
10m

L1 R2 SCS210AM

10m

L2 R13
D7

R6015ENX x 2
D2 Vo
SCS210AM
BD8693 beta R6015ENX
DRB160M-30
VDD VDD1 U2
Vin VOUT R10

600V 15A
GNDNC1 D9
Q1

MOSFET Loss
15 NC3 NC2 R6
V4 15k
D3
R15
5 Sine(0 141.421 50 0 0)
V3 3.3Meg

Rds(on) = 0.26Ω 3.4W/unit

R8 R6015ENX C4 125
D4 637k 470u IC=250 R12
R1
82m
R9 Q6
C6
100n PFC inter
Iref Vcs1 U1
VOUT
REF
GND
Vcs2
VOUT2
150k
R7 13k
R3
1T

Interleave scheme remarkably

R11 DRB160M-30
D5 BD8693 beta
VDD VDD1 U3 R4
Vin VOUT D8
GNDNC1 R5
NC3 NC2 82m
15k R26

reduces losses to around 50%

R31

© 2017 ROHM Co.,Ltd. P. 74

Application Examples： Interleaved PFC (Reference)

Reason for Loss Reduction by Interleaving

Current is 50% reduced for

non- interleaved scheme

• MOSFET conduction losses can be reduced to

25% for non- interleaved scheme
Pd=Rds(on)×Id2
• MOSFET switching losses lower for non-
interleaved scheme
• The smaller ID, the shorter tf.

© 2017 ROHM Co.,Ltd. P. 75

Application Examples： LED Lighting

LED Lighting Circuit: PFC BCM＋DC/DC Converter

Circuit Diagram (partial)
PFC DC/DC
D1

R5207AND
L1 Q2 L3 L2

L4 R7

RG 100Ω

C4 C5

LED
TX1 D2

S1
R5207AND
C1 C3

Q1

P1
R5 R4 100 R2
R3

D3
C2

510m
R1

R6

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Application Examples： LED Lighting
Efficiency by MOSFETs
PFC DC/DC

SJ MOSFETs Characteristics Original Original

R5207 R6004(RG=50Ω)
VDSS ID Rds(on) Qg R6004 R6004(RG=50Ω)
（V） （A） （Ω） （nC） R6007 R6007(RG=50Ω)
R5207 R6007(RG=50Ω)
Original 600 6.2 0.68 12
R5207
R5207AND 525 7 0.78 13 R6004(RG=100Ω)
R6007
R6004END 600 4 0.9 15 R5207(RG=100Ω)
R6004
R6007END3 600 7 0.57 20 R5207(RG=100Ω)
R5207
R6007(RG=100Ω)
Replace MOSFET with each of above.
Comparison of efficiency and noise with
changing RG value.

Input: Input:
100VAC 200VAC
Efficiency of Each SJ MOSFET
PFC Original R6004END R6007END3 R5207AND R5207AND R5207AND R5207AND R6004END R6007END3
Original R5207AND R5207AND R6004END R6007END3 R6004END R6007END3 R6004END R6007END3
DC/DC
(RG=100Ω) (RG=100Ω) (RG=100Ω) (RG=100Ω) (RG=100Ω) (RG=50Ω) (RG=50Ω) (RG=50Ω) (RG=50Ω)
Vin(rms) (V) Efficiency (%)
84.7 83.48 83.39 83.68 83.71 83.29 84.49 84.33 84.40 84.44
99.8 84.05 83.93 84.10 84.19 83.77 84.96 84.82 84.90 84.94
114.8 84.33 84.26 84.37 84.47 84.05 85.32 85.11 85.20 85.17
199.7 84.31 84.15 84.10 84.35 83.97 85.12 84.95 85.08 84.99
219.7 83.86 83.71 83.64 83.87 83.50 84.63 84.47 84.56 84.51
229.7 83.50 83.40 83.53 83.53 83.19 84.37 84.15 84.29 84.26
241.7 83.14 83.05 82.99 83.16 82.81 83.95 83.74 83.90 83.89

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 Application Examples： LED Lighting
Efficiency and Noise by MOSFETs
Efficiency of Each SJ MOSFET
PFC Original R6004EN R6007EN R5207AN R5207AN R5207AN R5207AN R6004EN R6004EN
Original R5207AN R5207AN R6004EN R6007EN R6004EN R6007EN R6004EN R6007EN
DC/DC
(RG=100Ω) (RG=100Ω) (RG=100Ω) (RG=100Ω) (RG=100Ω) (RG=50Ω) (RG=50Ω) (RG=50Ω) (RG=50Ω)
Vin(rms) (V) Efficiency (%)
84.7 83.48 83.39 83.68 83.71 83.29 84.49 84.33 84.40 84.44
99.8 84.05 83.93 84.10 84.19 83.77 84.96 84.82 84.90 84.94
114.8 84.33 84.26 84.37 84.47 84.05 85.32 85.11 85.20 85.17
199.7 84.31 84.15 84.10 84.35 83.97 85.12 84.95 85.08 84.99
219.7 83.86 83.71 83.64 83.87 83.50 84.63 84.47 84.56 84.51
229.7 83.50 83.40 83.53 83.53 83.19 84.37 84.15 84.29 84.26
241.7 83.14 83.05 82.99 83.16 82.81 83.95 83.74 83.90 83.89

Noise of Each SJ MOSFET

Original RG=100Ω R6004END RG=50Ω
Change in RG=50Ω, the
nose reduced less than
the original circuit

Larger RG was used to the original circuit for noise reduction. R6004END can use smaller RG and
the efficiency was improved as the result.

© 2017 ROHM Co.,Ltd. P. 78

Application Examples： LED Lighting

LED Lighting Circuit: PFC Wave Form Comparison

Original R6004END

R5207AND

Comparison of switching wave forms at PFC

© 2017 ROHM Co.,Ltd. P. 79

Application Examples： LED Lighting

Expanded Wave Form: PFC ON

Original R6004END

1.03us 1.18us

R5207AND

1.12us

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Application Examples： LED Lighting

Expanded Wave Form: PFC OFF

Original R6004END

192ns 184ns

R5207AND

184ns

© 2017 ROHM Co.,Ltd. P. 81

Application Examples： LED Lighting
LED Lighting Circuit: DC/DC Converter Wave Form Comparison
Original R6004END
RG=100Ω RG＝100Ω

R5207AND R6004END
RG=100Ω RG＝50Ω

© 2017 ROHM Co.,Ltd. P. 82

Application Examples： LED Lighting
Expanded Wave Form: DC/DC ON
Original R6004END
RG=100Ω RG＝100Ω

105ns 99ns

R5207AND R6004END
RG=100Ω RG＝50Ω

116ns 94ns

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Application Examples： LED Lighting
Expanded Wave Form: DC/DC OFF

Original R6004END
RG=100Ω RG＝100Ω
100ns
79ns

R5207AND R6004END
RG=100Ω RG＝50Ω

94ns 76ns

© 2017 ROHM Co.,Ltd. P. 84

Application Examples： Utilizing merits of the Hybrid MOS

PFC CCM Circuit for Air Conditioning

SCS112AM
MOSFET Driver IC R6035GN
BD8693 D7
RFUS20TF6S

D1

L1

AC200V~265V 340V
L2
BD8693 beta D6
D2 VDD VDD1 U2 Vo
10
Vin VOUT
GNDNC1 R4 Q1
d1n4007 NC3 NC2 15k
R15 C3
1u
d1n4007 18 10m
BD8693 beta 510m
V4 R13
VDD VDD1 U3 10 R14
D3 Vin VOUT
5 Sine(0 282.843 50 0 0) GNDNC1 R5 Q6 R2
V3 R8 NC3 NC2
D4 R1 C5
1u
1K
d1n4007 10m 15k C4
R18
C6 R9 R31 510m
100n PFC inter R17
Iref Vcs1 U1
VOUT
REF
GND 1K
Vcs2
VOUT2 R19
R7
10m R3
C1 C8 R26
330p 330p
D5

d1n4007
PFC Control IC
Interleaved CCM

© 2017 ROHM Co.,Ltd. P. 85

Application Examples： Utilizing merits of the Hybrid MOS

PFC Actual Evaluation: SiC Diode vs Si Diode （FRD）

Company A Company A
FRD FRD

Efficiency (%) Loss (W)

Po(W) FRD
他社FRD SiC Po(W) FRD
他社FRD SiC
351 97.63% 97.74% 351 8.33 7.90
525 97.68% 97.83% 525 12.17 11.35
769 97.63% 97.78% 769 18.19 16.98
1047 97.54% 97.69% 1047 25.81 24.12
1535 97.33% 97.49% 1535 40.96 38.42
2094 97.01% 97.20% 2094 62.51 58.35
Reduced 4.2W at 2kW

© 2017 ROHM Co.,Ltd. P. 86

Application Examples： Utilizing merits of the Hybrid MOS

Hybrid MOSFET vs IGBT

Actual Circuit A: PFC Evaluation
Efficiency

Conditions：
200V
60Hz Reduced 4W
Vo=340V at 1kW
fsw=35kHz

Loss (W)
L=200μH
Diode：SCS112AM

Efficiency (W)
Po(W) IGBT R6035GN Reduction(W)
改善量(W)
500 15.86 12.54 3.32
750 22.37 18.64 3.73
1000 30.26 26.28 3.97
1500 44.56 41.13 3.43
Output Power (W)

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Application Examples： Utilizing merits of the Hybrid MOS

Actual Circuit A: Reason for Low Loss of Hybrid MOSFET

Hybrid-
MOS
R6035GNX

Part of lower loss

IGBT
Ultra high
speed type

• Lower loss at on
• Faster switching

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 Application Examples： Utilizing merits of the Hybrid MOS

Efficiency Comparison

Hybrid-MOS + SiC SBD

Original
Efficiency (%)

Efficiency

Circuit
効
率

HybridMOS HybridMOS
Original SJ MOS+FRD +FRD +SiC SBD

MOSFET Original R6030ENZ R6035ENZ R6046ANZ R6035GNZ R6035GNZ

RFUH30TS RFUH30TS RFUH30TS RFUH30TS
DIODE Original SCS112AM
6D 6D 6D 6D
Po (W) Efficiency (%)
196 93.55 93.92 93.85 93.64 93.90 95.50
500 95.89 96.39 96.41 96.36 96.41 97.13
751 96.36 96.92 96.97 96.93 96.94 97.47
1003 96.50 97.11 97.05 97.07 97.13 97.62
1509 96.64 97.28 97.25 97.26 97.29 97.63
2004 96.70 97.19 97.17 97.16 97.24 97.57
2531 96.67 97.08 97.08 97.08 97.17 97.41
3008 96.63 96.90 96.91 96.89 97.04 97.24
3575 96.55 96.69 96.71 96.69 96.88 97.00
4000 96.47 96.43 96.47 96.54 96.71 96.77
© 2017 ROHM Co.,Ltd. P. 89
Si Power Devices: Application Examples Utilizing the Merits

Si Diodes Si Transistors

• Types and Characteristics • Types, Characteristics, Comparison

• Rectifier Diode: Characteristics Comparison • Bipolar, MOSFET, IGBT
• Schottky Barrier Diode: Types and • High Voltage MOSFETs
Characteristics • Standard Super Junction MOSFET
• Fast Recovery Diode: Types and • Low Noise Super Junction MOSFET
Characteristics • High Speed Super Junction MOSFET
• Presto MOS High Speed trr Super Junction
Criteria for Selecting a Transistor MOSFET
• Hybrid MOS
-Application Criteria
①Measure actual current and voltage wave
form Application Examples Utilizing the Merits
②Always within absolute maximum ratings?
• Active PFCs
③Within SOA?
⁃ 2 types of PFC control mode (BCM/CCM）
④Within SOA derated by the ambient
⁃ Efficiency improvement of BCM circuit
temperature at actual use?
⁃ Efficiency improvement of CCM circuit
⑤Single pulse or continuous pules?
⁃ Reference: Interleave scheme
⑥Is the average power dissipation within the
rated power at the ambient temperature? •LED lighting system: Efficiency Comparison
⑦Is the junction temperature within 150℃? by MOSFETs
⑧Criteria for selecting a transistor • Utilizing merits of the Hybrid MOS

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© 2017 ROHM Co.,Ltd.