SYMBOL:

CIRCUIT DIAGRAM:

FORWARD BIAS:

REVERSE BIAS:
 Exp.No: CHARACTERISTICS OF SEMICONDUCTOR (PN
Date: JUNCTION) DIODE

AIM:
To determine the forward and reverse characteristics of the given PN junction diode and
to determine cut-in voltage

APPARATUS REQUIRED:

S.No Name Range Qty

1 R.P.S (0-30)V 1
2 Ammeter (0-5) mA, 2
(0-25) mA 1

3 Voltmeter (0-10)V 1
(0-1 )V 1
4 Connecting wires -
5 Bread Board - 1
6 Resistors 1KΩ 2
7 Diode- PN BY127 1

THEORY:

A diode is a PN junction formed by a layer of P type and layer of N type

Semiconductors. Once formed the free electrons in the N region diffuse across the junction and
combine with holes in P region and so a depletion Layer is developed. The depletion layer
consists of ions, which acts like a barrier for diffusion of charged beyond a certain limit. The
difference of potential across the depletion layer is called the barrier potential. At 2.5degree the
barrier potential approximately equal 0.7v for silicon diode and 0.3v for germanium diode.

When the junction is forward bias, the majority carrier acquired sufficient energy to
overcome the barrier and the diode conducts. When the junction is reverse biased the depletion
layer widens and the barrier potential increases. Hence the Majority carrier cannot cross the
junction and the diode does not conduct. But there will be a leakage current due to minority
carrier. When diode is forward biased, resistance offered is zero, and when reverse biased
resistance offered is infinity. It acts as a perfect switch.

TABULATION:
FORWARD BIAS:

S.No. Forward voltage(Vf) Reverse Current(If)

REVERSE BIAS:

S.No. Reverse voltage(Vr) Reverse Current(Ir)

MODEL GRAPH

PROCEDURE:
FORWARD BIAS:

a. The connections are made as per the circuit diagram.

b. The positive terminal of power supply is connected to anode of the diode
and negative terminal to cathode of the diode.
c. Forward voltage Vf across the diode is increased in small steps and the
forward current is noted.
d. The readings are tabulated. A graph is drawn between V f and I f.

REVERSE BIAS :

a. The connections are made as per the circuit diagram.

b. The positive terminal of power supply is connected to cathode of the diode
and negative terminal to anode of the diode.
c. Reverse voltage Vf across the diode is increased in small steps and the
Reverse current is noted.
d. The readings are tabulated. A graph is drawn between V r and I r.

Applications:
It is the process of rectifier as one of the part of DC Power Supplies. In cut-out circuits
utilized for waveform era. PN junctions have been used as rectifiers in power supplies, detectors
in RF,circuits, Zener diodes which are voltage regulators, clippers, LED's, PIN diodes are RF
switches.

RESULT:

Thus the characteristics of PN-Junction diode were drawn.

VIVA VOCE:
1. What is meant by a semiconductor? Give two examples?

2. What are the types of semiconductor?

3. What is meant by doping?

4. Define – drift current

5. How depletion region is formed in the PN junction?

6. List the applications of PN junction diode.

7. Define – Barrier potential

8. What is peak inverse voltage of a diode?

9. What is avalanche breakdown?

10. What is leakage current?

11. What is meant by forward bias?

12. What is meant by reverse bias?

13. What is an ideal diode? How does it differ from a real diode?

14. What is the effect of temperature in the diode reverse characteristics?

15. What is cut-in or knee voltage? Specify its value in case of Ge or Si?

16. What are the difference between Ge and Si diode?

17. What is the relationship between depletion width and the concentration of impurities?

18. Comment on diode operation under zero biasing condition

19. How does PN junction diode acts as a switch?

20. What is the need for connecting Resistance Rs in series with PN diode?

21. Write the diode current equation.

22. What is the static resistance of a diode?

23. What is the dynamic resistance of a diode?

24. Why is silicon used popularly compared

to germanium?

SYMBOL:
CIRCUIT DIAGRAM:

FORWARD BIAS:

REVERSE BIAS:
 Exp. No:
CHARACTERISTICS OF ZENER DIODE
Date:
AIM:

To determine the forward and reverse characteristics of Zener diode and to determine its
breakdown voltage

APPARATUS REQUIRED:
S.No Name Range Qty
1 R.P.S (0-30)V 1
2 Ammeter (0-15) mA 1
(0-50) mA 1

3 Voltmeter (0-10)V 1
(0-1 )V 1
4 Connecting wires -
5 Bread Board - 1
6 Resistors 1KΩ 2
7 Diode- Zener F825 1

THEORY:

Zener diode is a heavily doped Silicon diode. An ideal P-N junction diode does not
conduct in reverse biased condition. A Zener diode conducts excellently even in reverse biased
condition. These diodes operate at a precise value of voltage called break down voltage. A Zener
diode when forward biased behaves like an ordinary P-N junction diode. A Zener diode when
reverse biased undergoes avalanche break down or zener break down.

Avalanche Break down:

If both p-side and n-side of the diode are lightly doped, depletion region at the junction
widens. Application of a very large electric field at the junction increases the kinetic energy of
the charge carriers which collides with the adjacent atoms and generates charge carriers by
breaking the bond, they in-turn collides with other atoms by creating new charge carriers, this
process is cumulative which results in the generation of large current resulting in Avalanche
Breakdown.

Zener Break down:

If both p-side and n-side of the diode are heavily doped, depletion region at the junction
reduces, it leads to the development of strong electric field and application of even a small
voltage at the junction may rupture covalent bond and generate large number of charge carriers.
Such sudden increase in the number of charge carriers results in Zener break down.

TABULATION:
FORWARD BIAS:

S.No. Forward voltage(Vf) Reverse Current(If)

REVERSE BIAS:

S.No. Reverse voltage(Vr) Reverse Current(Ir)

MODEL GRAPH

PROCEDURE:
FORWARD BIAS:

a. The connections are made as per the circuit diagram.

b. The positive terminal of power supply is connected to anode of the diode
and negative terminal to cathode of the diode.
c. Forward voltage Vf across the diode is increased in small steps and the
forward current is noted.
d. The readings are tabulated. A graph is drawn between V f and I f.

REVERSE BIAS:

a. The connections are made as per the circuit diagram.

b. The positive terminal of power supply is connected to cathode of the diode
and negative terminal to anode of the diode.
c. Reverse voltage Vf across the diode is increased in small steps and the
Reverse current is noted.
d. The readings are tabulated. A graph is drawn between V r and I r.

Applications:

Zener diode is used to provide a 3V reference to the Bluetooth device. Another

application involves use of Zener diode as a voltage regulator. This filtered DC voltage is
regulated by the diode to provide a constant reference voltage of 15V.

RESULT:

Thus the characteristics of Zener diode were drawn.

VIVA VOCE:

1. What are breakdown diodes or Zener diodes?

2. What is Zener breakdown?

3. What is break down? What are its types?

4. How does the Zener breakdown voltage vary with temperature?

5. What is avalanche break down?

6. What is the difference between PN Junction diode and Zener diode?

7. What is break down voltage?

8. What are the applications of Zener diode?

9. What is voltage regulator?

10. What is the doping concentration in Zener diodes?

11. Can we use Zener diode as a switch?

12. List the other Zener diodes with different breakdown voltages.

13. What is the cause of reverse breakdown?

14. What is Zener voltage?

15. Draw the symbol for the Zener diode.

CIRCUIT DIAGRAM:

(0-25mA)
 + A -
1KΩ
+
RPS(0-30)V
V
(0-30)V
-

TABULATION:
Reverse voltage Reverse current Reverse current
(V) (In darkness) (In illumination)
(mA) (mA)

MODEL GRAPH

Exp.No:
CHARACTERISTICS OF PHOTODIODE
Date:
AIM:

To study the V-I characteristics of a photo-diode

APPARATUS REQUIRED:

S.No Component Range/Specification Quantity

1 Photodiode - 1
2 Resistor 1KΩ 1
3 Ammeter 0-25mA 1
4 Voltmeter 0-30 V 1
5 RPS 0-30 V 1
6 Breadboard and connecting wires - 1

THEORY:

A silicon photodiode is a solid state light detector that consists of a shallow diffused P-N
junction with connections provided to the outside world. When the top surface is illuminated,
photons of light penetrate into the silicon to a depth determined by the photon energy and are
absorbed by the silicon generating electron-hole pairs.

The electron-hole pairs are free to diffuse (or wander) throughout the bulk of the
photodiode until they recombine. The average time before recombination is the “minority carrier
lifetime”. At the P-N junction is a region of strong electric field called the depletion region. It is
formed by the voltage potential that exists at the P-N junction. Those light generated carriers that
wander into contact with this field are swept across the junction.

If an external connection is made to both sides of the junction a photo induced current
will flow as long as light falls upon the photodiode. In addition to the photocurrent, a voltage is
produced across the diode. In effect, the photodiode functions exactly like a solar cell by
generating a current and voltage when exposed to light.
PROCEDURE:

1. Switch on the power supply.

2. Photodiode is subjected to darkness and illumination and the following steps are
followed each time.
3. By varying the supply voltage in steps of 1V, note ddown the reverse voltage(Vr)
and corresponding reverse current (Ir)
4. Plot the graph between reverse voltage and reverse current.

Application:
 Medical devices
 Safety equipment
 Optical communication devices
 Position sensors
 Bar code scanners
 Automotive devices

RESULT:

Thus the characteristic of a photodiode were plotted.

VIVA VOCE:

1. Explain the principle of photoconduction.

2. What are the applications of photo diode?

3. In what sense does the photo diode differs from a rectifier diode?

4. Why photo diode works in reverse bias condition only?

5. Differentiate between Photo diode and LED.

6. Between what parameters is the diode characteristics curve plotted?

7. What for photodiode is used?

8. How is a PN junction formed?

9. On what parameter does the colour of light emitted by LED depend?

10. What does the arrow direction in the diode symbol indicate?
CIRCUIT DIAGRAM:

TABULATION:

S.No Under Darkness Under illumination

VCE(V) Ic(mA) VCE(V) Ic(mA)

MODEL GRAPH
 Exp. No: CHARACTERISTICS OF PHOTOTRANSISTOR
Date:
AIM:

To study the V-I characteristics of a photo-transistor

APPARATUS REQUIRED:

S.No Component Range/Specification Quantity

1 Phototransistor - 1
2 Resistor 1KΩ 1
3 Ammeter 0-25mA 1
4 Voltmeter 0-10 V 1
5 RPS 0-30 V 1
6 Breadboard and connecting wires - 1

THEORY:

The photo transistor is a 3 terminal device which gives an electrical current as output if
an input light excitation is provided. It works in reverse bias. When reverse biased along with the
reverse bias current ICO, the light current IL is also added to the total output current. The
amount of current flow depends on the input light intensity given as excitation. Phototransistor is
basically a photodiode with amplification and operates by exposing its base region to the light
source. Phototransistor light sensors operate the same as photodiodes except that they can
provide current gain and are much more sensitive than the photodiode with currents are 50 - 100
times greater than that of the standard photodiode. Phototransistors consist mainly of a bipolar
NPN transistor with the collector-base PN-junction reverse-biased. The phototransistor’s large
base region is left electrically unconnected and uses photons of light to generate a base current
which in turn causes a collector to emitter current to flow.
PROCEDURE:
 1. Switch on the power supply.
2. Photodiode is subjected to darkness and illumination and the following steps are
followed each time.
3. By varying the supply voltage in steps of 1V, note down the voltage(VCE)
and corresponding current (Ic)
4. Plot the graph between voltage and current.

Application:
Opto-isolators

RESULT:

Thus the characteristic of a phototransistor were plotted.

VIVA VOCE:
1. What sense does the photo transistor differs from a rectifier diode?

2. In which region does the photo transistor operates?

3. Draw the basic arrangement of biasing of a phototransistor.

4. What is meant by dark resistance in photo transistor?

5. Differentiate between photo diode and phototransistor.

6. What are the various types of luminescence?

7. Define – Photoluminescence

8. Define –Hybrid Parameters

9. What is the use of h-parameters?

10. Which is the most commonly used transistor configuration?

CIRCUIT DIAGRAM:

PIN DIAGRAM OF BC107

 B

C
 Exp. No: CHARACTERISTICS OF A NPN TRANSISTOR
Date: UNDER COMMON EMITTER CONFIGURATION

AIM:

To obtain the input and output characteristics of the given transistor in common emitter
configuration.

APPARATUS REQUIRED:

S.No. COMPONENTS SPECIFICATION QTY

1 Transistor BC 107 Max Rating : 50V 1A, 3W 1

2 Resistors 1kΩ,470Ω 2

3 Regulated power supply (0-30) V 2

(0-10) v 1
4 Voltmeters
(0-1) v 1

5 Ammeters (0-10) m A 2

6 Bread board & connecting wires - 1

THEORY:
A NPN function transistor consist of a silicon (or germanium) crystal in which a layer of
p – type silicon is sandwiched between two layers of N – type silicon. The arrow on emitter lead
specifies the direction of the current flow when the emitter – base function is forward biased. As
the conductivity of the BJT depends on both the majority and minority carriers it is called bipolar
device. In CE configuration, Emitter is common to both the Emitter and Base.

A transistor can be in any of the three configurations viz, Common base, Common
emitter and Common Collector .The transistor consists of three terminal emitter, collector and
base. The emitter layer is the source of the charge carriers and it is heavily doped with a
moderate cross sectional area. The collector collects the charge carries and hence has moderate
doping and large cross sectional area. The base region acts a path for the movement of the charge
carriers. In order to reduce the recombination of holes and electrons the base region is lightly
doped and is of hollow cross sectional area. Normally the transistor operates with the emitter
base junction forward biased. In transistor, the current is same in both junctions, which indicates
that there is a transfer of resistance between the two junctions which is known as transfer
resistance of transistor.

TABULATION:
Input Characteristics:

VCE = VCE =
VBE(V) IB (mA) VBE(V) IB(mA)

Output characteristics:
IB = IB=

VCE(V) IC (mA) VCE(V) Ic (mA)

MODEL GRAPH

PROCEDURE:
Input Characteristics:

Voltage across Base Emitter junction VBE vs IB, where VCE constant

Output Characteristics:

Voltage across Collector Emitter junction VCE vs IC where IB constant

PROCEDURE:

Input Characteristics:

1. Connections are made as per the circuit diagram.

2. VCE is kept const (say 2v), VBE is varied insteps of 0.1v and the corresponding IB
values are tabulated. The above procedure is repeated for 1V etc.
3. Graph is plotted between VBE Vs IB, where VCE constant.

Output Characteristics:

1. Connection are made as per the circuit diagram

IB is kept const, VCE is varied in step IV the corresponding IC values are tabulated.
2. The
above procedure is repeated for different constant values.
3. Graph is plotted between VCE and Ic for a constant IB.

Applications:

CE Amplifier. The common emitter circuit is popular because it's well-suited for voltage
amplification, especially at low frequencies. Common-emitter amplifiers are also used in radio
frequency transceiver circuits. Common emitter configuration commonly used in low-noise
amplifiers.

RESULT:

The transistor characteristics of a Common Emitter (CE) configuration were plotted.

VIVA VOCE:
1. Why CE configuration is commonly used for amplifier circuits?

2. What is indicated by B, C and 107 in BC107?

3. What are the regions of operation of a transistor?

4. What is meant by thermal run away?

5. To operate a transistor as amplifier, emitter junction is forward biased and collector junction is
reverse biased. Why?

6. Which transistor configuration provides a phase reversal between the input and output signals?

7. What is the range β of a BJT?

8. What is Early Effect?

9. Why the doping of collector is less compared to emitter?

10. What are the input and output impedances of CE configuration?

11. Identify various regions in the output characteristics?

12. What is the relation between α, β and γ?

13. What is current gain in CE configuration?

14. Why CE configuration is preferred for amplification?

15. What is the phase relation between input and output?

16. Draw diagram of CE configuration for PNP transistor?

17. What is the power gain of CE configuration?

18. What are the applications of CE configuration?

19. Why the output is phase shifted by 180 degree only in CE configuration.

20. At what region of the output characteristics, a transistor can act as an amplifier?

PIN DIAGRAM OF BC107

 400 B

CIRCUIT DIAGRAM:

TABULATION:

Input Characteristics:
VCB = VCB =
VBE(V) IE (mA) VBE(V) IE (mA)

Output Characteristics:

IE = IE=

VBE(V) IC (mA) VBE(V) Ic (mA)

Exp. No: CHARACTERISTICS OF NPN TRANSISTOR UNDER CB

Date: CONFIGURATION
AIM:

To obtain the input and output characteristics of the given BJT in common base
configuration

APPARATUS REQUIRED:
S.No. COMPONENTS SPECIFICATION QTY

1 Transistor BC 107 Max Rating : 50V 1A, 3W 1

2 Resistors 1kΩ,470Ω 2

3 Regulated power supply (0-30) V 1

(0-10) v 1
4 Voltmeters
(0-1) v 1

5 Ammeters (0-10) m A 2

6 Bread board & connecting wires - 1

THEORY:

In this configuration the base is made common to both the input and out. The emitter is
given the input and the output is taken across the collector. The current gain of this configuration
is less than unity. The voltage gain of common base configuration is high. Due to the high
voltage gain, the power gain is also high. In common base configuration, Base is common to
both input and output. In this configuration the input characteristics relate IE and VEB for a
constant VCB. Initially let VCB = 0 then the input junction is equivalent to a forward biased
diode and the characteristics resembles that of a diode. Where VCB = +VI (volts) due to early
effect IE increases and so the characteristics shifts to the left. The output characteristics relate IC
and VCB for a constant IE.
MODEL GRAPH
PROCEDURE:

Input Characteristics:

Voltage across Base Emitter junction VBE vs IE, where VCB constant

Output characteristics:

Voltage across Collector Emitter junction VBC vs ICwhere IE constant

PROCEDURE:

Input Characteristics:

a. Connections are made as per the circuit diagram.

b. VCB is kept const (say 2v), VBE is varied insteps of 0.1v and the
corresponding IE values are tabulated. The above procedure is repeated
for 1V etc.
c. Graph is plotted between VBE vs IE, where VCB constant.

Output Characteristics:

a. Connection are made as per the circuit diagram

b. IE is kept const, VBC is varied in step IV the corresponding IC values are
tabulated.
c. The above procedure is repeated for different constant values.
d. Graph is plotted between VBC and Ic for a constant IE.

Applications:

This type of bipolar transistor configuration has a greater input impedance, current
and power gain than that of the common base configuration but its voltage gain is much
lower. The common emitter configuration is an inverting amplifier circuit.

RESULT:
The transistor characteristics of a common base configuration were plotted.
VIVA VOCE:

1. Express Ic in terms ICE0 and ICB0.

2. What does arrow in the transistor symbol indicate?

3. Why emitter of a transistor is highly doped?

4. Which configuration is good as a constant current source? Why?

5. What is the range of ?

6. Why is less than unity?

7. Input and output impedance equations for CB configuration?

8. What is carrier lifetime?

9. What is the importance of Fermi level?

JFET AC Equivalent Circuit:

PIN DIAGRAM OF BFW10

S
G

Shield

CIRCUIT DIAGRAM

TABULATION:

Drain characteristics

VGS = -2V VGS = - 4 V

VDS (V) ID (mA) VDS (V) ID (mA)

Transfer Characteristics

VDS = 2V VDS = 4V

Vgs (V) ID (mA) VGS (V) ID (mA)

 Exp. No:
Date: CHARACTERISTICS OF JFET

AIM:

To determine the drain and transfer characteristics of junction FET at constant gate
voltages.

APPARATUS REQUIRED:

S.No. Components Specification Qty

BFW10
1 FET 1
Idss> 8 mA, Vp<8V
2 Resistors 1kΩ 1

Regulated dual
3 (0-30)V 1
power supply
4 Voltmeters (0-10)V 2
5 Ammeters (0-15) mA 1
Bread board & 1
6 -
connecting wires

THEORY:

FET is a unipolar voltage operated device. It has got 3 terminals. They are source,
drain and gate. When the gate is biased negative with respect to the source, the PN junctions
are reverse biased & depletion regions are formed. The channel is more lightly doped than the
p type gate, so the depletion region penetrate deeply in to the channel. The result is that the
channel is narrowed, its resistance is increased and ID is reduced. When the negative bias
voltage is further increased, the depletion regions meet at the center and ID is cutoff
completely. The depletion regions produces a potential gradient which is of varying thickness
around the PN junction and restrict the current flow through the channel by reducing its
effective width and thus increasing the overall resistance of the channel itself. Then we can
see that the most-depleted portion of the depletion region is in between the gate and the drain,
while the least depleted conducts with zero bias voltage applied (i.e, the depletion region has
near zero width).
MODEL GRAPH

With no external Gate voltage (VG = 0), and a small voltage ( VDS ) applied between
the drain and the source, maximum saturation current ( IDSS ) will flow through the channel
from the drain to the source restricted only by the small depletion region around the
junctions. If a small negative voltage ( -VGS ) is now applied to the gate the size of the
depletion region begins to increase reducing the overall effective area of the channel and thus
reducing the current flowing reverse bias voltage increases the width of the depletion region
which in turn reduces the conduction of the channel.

PROCEDURE:

DRAIN CHARACTERISTICS

INPUT: Drain voltage VDS is varied insteps of 1V, VGS is kept constant
OUTPUT: Drain current ID

TRANSFER CHARACTERISTICS

INPUT: Gate – source voltage VGS is varied ,Drain –source voltage VDS is kept constant
OUTPUT: Drain current ID

PROCEDURE:

Drain Characteristics:

a. Connections are made as per the circuit diagram.

b. Gate –source voltage VGS is kept constant (say –1v), drain voltage VDS is varied
insteps of 1v and the corresponding drain current ID values are tabulated.
c. The above procedure is repeated for VGS= -2v, 0v.
d. The graph is plotted VDS and ID for a constant VGS.
e. The drain resistance is found from the graph
rd =VDS/ ID
Transfer Characteristics:

a. Connections are made as per the circuit diagram.

b. Drain –source voltage VDS is kept constant (say 5v), the gate – source voltage
VGS is varied insteps of 1v (-VE voltage) and the corresponding drain current
ID values are tabulated.
c. The above procedure is repeated for VDS = 10v, 15v
d. Graph is plotted between VGS and ID for a constant VDS.
e. The trans conductance is found from the graph
gm =ID/VG
Applications:
 The junction field effect transistor (JFET) is used as a constant current source. The
JFET is used as a buffer amplifier. ... The JFET is used as high impedance wide band
amplifier. The JFET is used as a voltage variable resistor (VVR) or voltage development
resistor (VDR)

RESULT:

Thus the drain and transfer characteristics of a JFET is plotted.

VIVA VOCE:

1. Why FET is called a unipolar device?

2. What are the advantages of FET?

3. What is trans-conductance?

4. Why an input characteristic of FET is not drawn?

5. What are the characteristics of JFET source amplifier?

6. Why FET is called as a unipolar transistor?

7. What are the advantages of FET over BJT?

8. State why FET is voltage controlled device.

9. Why thermal runaway does not occur in FET?

10. What is the difference between MOSFET and FET?

11. What is trans-conductance?

PIN DIAGRAM

B1

E C B2

CIRCUIT DIAGRAM:

TABULATION:

VB1B2 = 2v VB1B2 = 4v VB1B2 = 6v

VB1E(v) IE(mA) VB1E(v) IE(mA) VB1E(v) IE(mA)
 Exp. No: CHARACTERISTICS OF UJT AND GENERATION
Date: OF SAWTOOTH WAVEFORMS
AIM:

To determine the characteristics of UJT and to calculate intrinsic stand-off ratio.

APPARATUS REQUIRED:

S.No Components Specification Quantity

1 UJT (2N2646) 1

2 Resistors 1K 2

3 Ammeter (0-25) mA 1

4 Voltmeters (0-10)V 2

5 Regulated dual power supply (0-30) V 1

6 Bread board & connecting wires. - 1

THEORY:

UJT (double base diode) consists of a bar of lightly doped n-type silicon with a small
piece of heavily doped P type material joined to one side. It has got three terminals. They are
Emitter (E), Base1 (B1), Base2 (B2). Since the silicon bar is lightly doped, it has a high
resistance and can be represented as two resistors, rB1and rB2. When VB1B2 = 0, a small
increase in VE forward biases the emitter junction. The resultant plot of VE and I E is simply
the characteristics of forward biased diode with resistance. Increasing VEB1 reduces the
emitter junction reverse bias. When VEB1 = VrB1 there is no forward or reverse bias and IE
= 0. Increasing VEB1 beyond this point begins to forward bias the emitter junction. At the
peak point, a small forward emitter current is flowing. This current is termed as peak current
(IP ). Until this point UJT is said to be operating in cutoff region. When IE increases beyond
peak current the device enters the negative resistance region. In which the resistance rB1 falls
rapidly and VE falls to the valley voltage Vv. At this point IE = Iv. A further increase of IE
causes the device to enter the saturation region.

MODEL GRAPH
PROCEDURE:
 a. Connections are given as per the circuit diagram.
b. The voltage across B1and B2 (VB1B2) is kept constant (say 5v), emitter voltage
VB1E is varied insteps & the corresponding IE values are tabulated.
c. The above procedure is repeated for VB1B2=10V.
d. Graph is plotted between VB1E and IE for a constant value of VB1B2.
e. From the graph, peak voltage & valley voltage is obtained.

Applications:
The most common application of a unijunction transistor is as a triggering device for
SCR's and Triacs but other UJT applications include sawtoothed generators, simple
oscillators, phase control, and timing circuits. The simplest of all UJT circuits is the
Relaxation Oscillator producing non-sinusoidal waveforms.

RESULT:

Thus the static emitter characteristics of UJT drawn

VIVA VOCE:
1. Write the features of UJT.

2. What are the applications of UJT?

3. What is relaxation oscillator?

4. Why does negative resistance region appears in UJT?

5. What is the doping profile of UJT?

6. What is the importance of intrinsic stand-off ratio?

7. Is there any break down region in UJT?

8. Write the features of UJT.

9. What is the difference between UJT and FET?

10. Define – Latching current

11. Define – Holding current

12. What is drain resistance?

13. What is inter-base resistance?

14. What is amplification factor?

PIN DIAGRAM:
 Bottom view

Symbol

CIRCUIT DIAGRAM:

TABULATION:
Vi =
Frequency (Hz) Vo (V) Gain = Vo / Vi Gain= 20log(Vo/Vi)dB
 DESIGN FREQUENCY RESPONSE
Exp. No:
CHARACTERISTICS OF A COMMON EMITTER
Date:
AMPLIFIER
AIM:

To design a common emitter amplifier circuit and to plot frequency response

characteristic curve

APPARATUS REQUIRED:

Sl.No Equipments/Components Range/Details Qty

1 RPS (0-30)V 1

2 Resistors

3 Capacitors

4 Transistors BC107 1

5 CRO (0-30)MHZ 1

6 FG (0-3) MHZ 1

7 Bread Board, Connecting Wires 1

THEORY:

Amplifier is an electronic circuit that is used to raise the strength of a weak signal.
The process of raising the strength of a weak signal is known as amplification. One
importance requirement during amplification is that only the magnitude of the signal should
increase and there should be no change in signal shape. The transistor is used for
amplification. From the voltage waveforms for the CE circuit shown below, it is seen that
there is a 180o phase shift between the input and output waveforms. This can be understood
by considering the effect of a positive going input signal. When VS increases in a positive
direction, it increases the transistor VBE. The increase in VBE raises the level of IC, thereby
increasing the drop across Rc, and thus reducing the level of the VC. The changing level of
VC is capacitor-coupled to the circuit output to produce the ac output voltage, VO. As VS
increases in a positive direction, VO goes in a negative direction. Similarly, When VS
changes in a negative direction, the resultant decrease in VBE reduces the IC level, thereby
reducing VRC, and producing a positive going output.

MODEL GRAPH
DESIGN:
Choose β= 100, VCC = 12V, IC = 2mA and S≤ 5
Design of RC and RE:
By applying KVL to output side,
VCC = ICRC + VCE + IERE
VE = VCC /10
VE = IERE
RE =VE /IE (since IC + IB = IE and IB = IC/β)
VCE = VCC /2
RC = 0.4VCC /IC
Design of R1 and R2:
VBE = 0.7V
VTH = IBRTH + VBE + (IB + IC)RE
R1 = RTHVCC/VTH
R2 = R1VTH /(VCC –VTH)
Design of Capacitor:
Ri = RB || hie
F = 1/2π Ri C
Take F = 100Hz and hie = 1.6 KΩ
C = 1/ (2π x Rix F) µF
F = 1/2πRCCo
Co = 1/ (2π x RC x F) µF
Calculation:
Bandwidth = fH – fL

CE amplifier circuit elements and their functions:

Biasing circuit: The resistances R1, R2 and RE form the biasing and stabilization circuit. The
biasing circuit must establish a proper operating point, otherwise a part of the negative half-
cycle of the signal may be cut-off in the output.
Input capacitor, C1: An electrolyte capacitor C1 is used to couple the signal to the base of the
transistor. If it is not used, the signal source resistance, Rs will come across R2 and thus
change the bias. C1 allows only ac signal to flow but isolates the signal source from R2.

Emitter bypass capacitor, CE: An emitter bypass capacitor, CE is used parallel with RE to
provide low reactance path to the amplified ac signal. If it is not used, then ac amplified ac
signal following through RE will cause a voltage drop across it, thereby reducing the output
voltage.
Coupling capacitor, C2: The coupling capacitor, C2 couples one stage of amplification to the
next stage. If it is not used, the bias conditions of the next stage will be drastically changed
due to the shunting effect of RC. This is because RC will come in parallel with the upper
resistance R1 of the biasing network of the next stage, thereby altering the biasing conditions
of the latter. In short, the coupling capacitor C2 isolates the dc of one stage from the next
stage, but allows the passage of ac signal.
The circuit has input impedance (Zi) and output impedance (ZO). These can cause voltage
division of the circuit input and output voltages. The circuit voltage amplification (AV), or
voltage gain, depends on the transistor parameters and on resistor RC and RL.

PROCEDURE:
a. Connect the circuit as per the circuit diagram
b. Set Vin = 2V in the signal generator. Keeping input voltage constant, vary the
frequency from 1Hz to 3MHzin regular steps.
c. Note down the corresponding output voltage.
d. Plot the graph: Gain in dB Vs Frequency in Hz.
e. Calculate the Bandwidth from the Frequency response graph.
Application:
The common emitter circuit is popular because it's well-suited for voltage
amplification, especially at low frequencies. Common-emitter amplifiers are also used in
radio frequency transceiver circuits. Common emitter configuration commonly used in low-
noise amplifiers

RESULT:

Thus a BJT CE Amplifier with self bias is designed and implemented and the
frequency response curve is plotted.
VIVA VOCE:
1. What is an amplifier?

2. What is small signal amplifier?

3. List the four differential amplifier configurations.

4. Why does amplifier gain reduce?

5. Explain the different regions in frequency response?

6. What is the equation for voltage gain?

7. What is cut off frequency? What is lower 3dB and upper 3dB cut off frequency?

8. What are the applications of CE amplifier?

9. What is active region?

10. What is bandwidth of an amplifier?

11. What is the importance of gain bandwidth product?

12. Draw h-parameter equivalent circuit of CE amplifier.

CIRCUIT DIAGRAM:
 Exp. No: 10 STUDY OF LIGHT ACTIVATED RELAY
Date: CIRCUIT
AIM:

To study the working of light activated relay circuit

THEORY:

1. Relay is a protective device used in the circuit to isolate the circuit from damage to occur
due to short circuit, over voltage etc.

2. The isolation is automatic, disconnecting the supply from the faulty section leaving the
healthier section in operation.

3. Photodiode in the circuit is used as photoconductive device.

4. When no light is incident on photodiode, the base current is supplied by the potentiometer
and the transistor is forward biased.

5. The relay coil is energized and the LED glows.

6. When light is incident on the photodiode, the diode current increases to a certain level.

7. The drop across base and emitter of transistor is not sufficient to forward bias the base-
emitter junction of transistor.

Thus the relay is de-energized when the incident light on the photodiode is raised to a
particular level, thereby turns off the LED.

Application:
This light sensitive circuit can operate a relay to switch on lamps or any AC loads
when it senses darkness. It is ideal to use as switch less night lamps driver. LDR is used as
the light sensor. When the intensity of light reduces, LDR offers more resistance and more
current passes to the base of T1 and it conducts.

RESULT:

Thus the working of light activated relay circuit was studied successfully.
VIVA VOCE:
1. What is a light activated relay?

2. How will the light level be measured?

3. How will the relay be released back when there is a need?

4. Which type of transistor configuration is used in relay circuit?

5. How can the sensitivity of circuit increased?

6. How is the intensity of light related to resistance offered by LDR?

7. Which component is used as a light sensor?

8. What are the various applications of light sensitive circuits?

CIRCUIT DIAGRAM:
TABULATION:

Exp. No: DESIGN AND TESTING OF RC PHASE SHIFT

Date: OSCILLATOR

AIM:
 To design and construct a RC phase shift oscillator for the given frequency (f0).

APPARATUS REQUIRED:

S.NO ITEM RANGE QTY

1 TRANSISTOR BC 107 1
2 RESISTOR
3 CAPACITOR
4 CRO ( 0 – 30 ) MHz 1
5 RPS (0-30) V 1
6 FUNCTION (0-1 )MHz 1
GENERATOR

THEORY:

In the RC phase shift oscillator, the required phase shift of 180˚ in the feedback loop from
the output to input is obtained by using R and C components, instead of tank circuit. Here a
common emitter amplifier is used in forward path followed by three sections of RC phase
network in the reverse path with the output of the last section being returned to the input of
the amplifier. The phase shift Ф is given by each RC section Ф=tanˉ1 (1/ωRC). In practice R-
value is adjusted such that Ф becomes 60˚. If the value of R and C are chosen such that the
given frequency for the phase shift of each RC section is 60˚. Therefore at a specific
frequency the total phase shift from base to transistor’s around circuit and back to base is
exactly 360˚ or 0˚. Thus the Barkhausen criterion for oscillation is satisfied.

DESIGN:
Vcc=12v, Ic=1mA, β=100,RE = 560 Ω
Vce=Vcc/2=6V, Vre=0.1Vcc=1.2V
Vb=Vre+0.7=1.9V,
R1=Vcc/10Ib – R2
=12/(10*20μA) – 10 K =47 K Ω
R2=Vb/10Ib = .9/(10*20μA)=9.5K Ω=10 K Ω
Rc=Vcc-Vce-(IeRe/Ic)
=2.4 K Ω

f=1/(2πR √ (6+4(Rc/R)))
C=1/2πRc√ (6+4(Rc/R)))

MODEL GRAPH
 =1/

(6.28*10*10^3*4 √ (6+4(2.2*10^3/10)))
=0.0015 μF
PROCEDURE:

1. Connect as per circuit diagram.

2. Connect CRO output terminals and observe the waveform.
3. Calculate practically the frequency of oscillations by using the expression f = 1 / T where
( T= Time period of the waveform)
4. Repeat the above steps 2, 3 for different values of L, and note down the practical values of
oscillations of the RC-phase shift oscillator.
5. Compare the values of oscillations both theoretically and practically.

Application:
Local oscillator for synchronous receivers, study purposes, musical instruments.

RESULT:

Thus a RC phase shift oscillator was designed and tested successfully.

VIVA VOCE:

1. What is an Oscillator circuit?

2. What are the classifications of Oscillators?

3. State the frequency for RC phase shift oscillator.

4. What are the types of feedback oscillators?

5. What is the minimum value of hfe for the oscillations in transistorized RC Phase shift
oscillator?

6. What is the frequency of oscillation of Wein bridge?

7. What do phase shift oscillator, twin- T oscillator and Wein bridge oscillator have in
common?

8. When will the stability of frequency of oscillation be high?

9. What is the primary advantage of RC phase shift oscillator?

10. What type of stability does an oscillator circuit using quartz crystal offer?

11. State the condition to get constant amplitude oscillation in a feedback oscillator circuit.

12. What type of crystal does a crystal oscillator have?

13. State the condition for sustained oscillation in a RC phase shift oscillator using FET.

14. What is the value of angular frequency of oscillation in a RC phase shift oscillator using
FET?
CIRCUIT DIAGRAM:
 Exp. No:
DIFFERENTIAL AMPLIFIERS USING FET
Date:

AIM:

To construct the Differential Amplifier in Differential mode and to find the

common mode rejection ratio (CMRR).

APPARATUS REQUIRED:

Sl.No Equipments/Components Range/Details Qty

1 FET 2

2 Resistors

3 RPS 2

4 Capacitors

5 CRO (0-30)MHZ 1

6 Bread Board, Connecting Wires

THEORY:

A differential amplifier is a type of electronic amplifier that amplifies the difference

between two input voltages but suppresses any voltage common to the two inputs.
Differential amplifiers are usually implemented with a basic two-transistor circuit called a
long-tailed pair or differential pair. This circuit was originally implemented using a pair of
vacuum tubes. The circuit works the same way for all three-terminal devices with current
gain. The long-tail resistor circuit bias points are largely determined by Ohm's Law and less
so by active component characteristics

1. A differential amplifier is a voltage amplifier that amplifies the difference between the two
input signals.
2. It is widely used in analog integrated circuits, because of its good bias stability, high
voltage gain and high input impedance.
3. The basic characteristic of differential amplifier is that, it is DC-coupled and avoids the use
of large bypass capacitors.
4. FET differential amplifier has higher input impedance than BJT differential amplifier.
5. The differential amplifier is said to operate in common-mode configuration when same
voltage is applied to both the input terminals.
TABULATION:
6. The ability of differential amplifier to reject a common-mode signal defined by its
common-mode Rejection Ratio (CMRR).

7. CMRR is expressed as the ration of differential gain to the common-mode gain.

C.M.R.R = | Ad/Ac |
C.M.R.R in dB = 20 log | Ad/Ac |
Ad = Differential mode gain
Ac = Common mode gain

PROCEDURE:

1. Connections are made as per the circuit diagram.

2. The input sine wave signal with appropriate amplitude from the function generator is fed to
the circuit.

3. The output is viewed in the CRO and the corresponding differential gain is calculated.

4. The frequency of the input signal is varied and the output signal gain is tabulated for
different frequencies.

5. A frequency Vs Gain (dB) plot using semilog sheet is plotted and the bandwidth of the
given amplifier is calculated from the plot.

6. Connect the circuit as shown in fig.2.

7. Apply input signal and observe the output using CRO.

8. Calculate the common-mode gain.

9. Calculate CMRR of the amplifier.

MODEL CALCULATIONS:

1. For common mode

signal: Gain Ac = Vo / Vi
Ac =
2. For differential mode
signal: Gain Ad = Vo / Vi
Ad =
CMRR = 20 log (Ad / Ac).
Application:
op-amp follower, non-inverting amplifier

RESULT:

Thus the differential amplifier is constructed and CMRR has been calculated.
VIVA VOCE:

1. What is a differential amplifier?

2. Give the applications of differential amplifier.

3. In a differential amplifier, VCC ≠ VEE. Why?

4. State the different configurations of differential amplifier. Which one is commonly used?

5. Give the main advantage of constant current bias over emitter bias.

6. A Differential Amplifier should have collector resistor‟s value (RC1 & RC2) as :

7. What is the purpose of differential amplifier?

8. A differential amplifier is capable of amplifying both AC and DC signal. Justify

CIRCUIT DIAGRAM:

CIRCUIT DIAGRAM FOR HALF WAVE RECTIFIER WITHOUT

FILTER:

CIRCUIT DIAGRAM FOR HALF WAVE RECTIFIER WITH FILTER:

 Exp. No: SINGLE PHASE HALF-WAVE RECTIFIERS
Date: WITH CAPACITIVE FILTER

AIM:

To construct a half wave rectifier using diode with capacitive filter and to draw its
output waveform.

APPARATUS REQUIRED:

Sl.No Equipments/Components Range/Details Qty

1 Multimeter 1

2 Resistors

3 Capacitors

4 Diode 1N4001 1

5 CRO (0-30)MHZ 1

6 Transformer 230V/(9-0-9) V 1

7 Bread Board, Connecting Wires

THEORY:

During positive half-cycle of the input voltage, the diode D1 is in forward bias and
conducts through the load resistor R1. Hence the current produces an output voltage across
the load resistor R1, which has the same shape as the positive half cycle of the input voltage.
During the negative half cycle of the input voltage, the diode is reverse biased and there is no
current through the circuit. i.e, the voltage across R1 is zero. The net result is that only the
positive half cycle of the input voltage appears across the load. The average value of the half
wave rectified output voltage is the value measured on DC voltmeter. For practical circuits,
transformer coupling is usually provided for two reasons.

1. The voltage can be stepped-up or stepped-down, as needed.

2. The AC source is electrically isolated from the rectifier. Thus, preventing shock hazards in
the secondary circuit.

TABULATION
MODEL GRAPH

With filter:

PROCEDURE:
1. Connections are made as per the circuit diagram.

2. Connect the primary side of the transformer to ac mains and the secondary side to the
rectifier input.

3. Using multimeter, measure the AC input voltage of the rectifier and DC voltage at the
output of the rectifier.

4. Find the theoretical of dc voltage by using the formula,

Vdc =Vm / π
where Vm=2Vrms, (Vrms= output AC voltage.)
5. The Ripple factor is calculated by using the formula „r‟ = AC output voltage / DC output
voltage.

Regulation characteristics:
1. Connections are made as per the circuit diagram.

2. By increasing the value of the rheostat, the voltage across the load and current flowing
through the load are measured.

3. The reading is tabulated

4. Draw a graph between load voltage (VL and load current ( IL ) taking VL on X-axis and IL
on y-axis.

5. From the value of no-load voltages, the percentage regulation can be calculated using the
formula.

Application:
Local oscillator for synchronous receivers, study purposes, musical instruments

RESULT:

Thus the half wave rectifier is designed with and without capacitor filter and the
corresponding dc output voltages and the ripple factors are measured and verified with the
theoretical values.
VIVA VOCE:
1. What are the advantages of bridge rectifier over centre-taped full wave rectifier?

2. Define - Transformer Utilization Factor. What is the TUF for half wave rectifier?

3. Give the expression for ripple factor of half wave rectifier?

4. What are the different types of filter circuits?

5. What is the PIV of half wave rectifier?

6. What is the mean value of half wave rectified sine wave?

7. What is the form factor for half wave rectified sine wave?

8. A half-wave rectifier circuit with a capacitive filter is connected to 200 Volts, 50 Hz ac

line. What will be the output voltage across the capacitor?

9. What is a thyratron?

10. What is the thyristor equivalent of a thyratron tube?

11. What is a Silicon Controlled Rectifier?

12. State the necessary condition for triggerring Thyristors.

13. Why pulse triggering is preferred over DC triggering?

14. Number of diodes required to construct a half wave rectifier:

 Exp. No: STUDY OF CRO FOR FREQUENCY AND
Date: PHASE MEASUREMENT

AIM:

To measure the phase difference & frequency using CRO

APPARATUS REQUIRED:

THEORY:

1.1 Measurement of Voltage Using CRO :

A voltage can be measured by noting the Y deflection produced by the voltage; using this
deflection in conjunction with the Y-gain setting, the voltage can be calculated as follows :
V = ( no. of boxes in cm. ) * ( selected Volts/cm scale )

1.2 Measurement of Current and Resistance Using a CRO :

Using the general method, a correctly calibrated CRO can be used in conjunction with a
known value of resistance R to determine the current, I‟ flowing through the resistor.

1.3 Measurement of Frequency Using a CRO :

A simple method of determining the frequency of a signal is to estimate its periodic time
from the trace on the screen of a CRO. However, this method has limited accuracy and
should only be used where other methods are not available. To calculate the frequency of the
observed signal, one has to measure the period, i.e. the time taken for 1 complete cycle, using
the calibrated sweep scale. The period could be calculated by,

T = ( no. of squares in cm) * ( selected time/cm scale ) Once the period „T‟ is known, the
frequency is given by, f (Hz) = 1/T(sec)

1.4. Measurement of Phase :

The calibrated time scales can be used to calculate the phase shift between two sinusoidal
signals of the same frequency. If a dual trace or beam CRO is available to display the two
signals simultaneously ( one of the signals is used for synchronization), both of the signals
will appear in proper time perspective and the amount of time difference between the
waveforms can be measured. This, in turn can be utilized to calculate the phase angle θ,
between the two signals.
PROCEDURE:

1. Set the signal generator to a frequency of 1000 cycles per second

2. Connect the output from the generator to the vertical input of the oscilloscope

3. The AC voltmeter and the leads to the vertical input of the oscilloscope are connected
across the generator's output

4. By adjusting the Horizontal Sweep time/cm and trigger, a steady trace of the sine wave
may be displayed on the screen

5. The trace represents a plot of voltage vs. time, where the vertical deflection of the trace
about the line of symmetry CD is proportional to the magnitude of the voltage at any instant
of time.

6. The relationship between the magnitude of the peak voltage displayed on the scope and the
effective or RMS voltage (VRMS) read on the AC voltmeter is
VRMS = 0.707 Vm (for a sine or cosine wave).

7. Set the horizontal gain so that only one complete wave form is displayed. the signal is
displayed as a function of time. Frequencies can then be determined as reciprocal of the
periods.

Application:
Radio, TV receivers, Medical fields.

RESULT:

Thus the measurement of phase difference & frequency using CRO was studied.
VIVA VOCE:
1. What is Cathode Ray Oscilloscope?

2. What are the basic components of CRO?

3. What is the function of probe in CRO?

4. How many types of probe are used in CRO?

5. What are the functions of different probes used in CRO?

6. In how many dimensions, does CRO give the visual representation of time varying signals?

7. Principally CRO is a Voltmeter. Justify

8. The sweep generator of a CRO is used to produce___________.

9. Which part is called as heart of CRO?

10. The light emitted by the zinc silicate coated fluorescent screen of CRT is of
______colour.

11. In terms of the division on screen, the voltage of the waveform in CRO is_________.

12. What is meant by Lissjous Pattern?

13. The Lissajous patterns help in the measurement of__________.

14. Input impedance of CRO is:

15. CRO uses Electrostatic deflection - Justify

16. What is the difference between spectrum analyzer and CRO?

17. Why digital storage oscilloscope is more preferable?

CIRCUIT DIAGRAM:

Exp. No:
REALIZATION OF PASSIVE FILTERS
Date:
AIM:

To determine experimentally the frequency response of low pass and high pass filters
and note down the cut off frequency

APPARATUS REQUIRED:

1. Simulation Software
2. PC With desktop

THEORY:

High pass filter:

This filter allows only high frequency of AC voltage and rejects the low frequency
components at the output. We know that Xc < 1/f (Reactance is inversely proportional to the
frequency). At low frequency, reactance is very high so it does not allow any signal at the
output. At high frequency, reactance is very low so it does not allow the entire signal at the
output.

Low pass filter:

This filter allows only low frequency of AC voltage and rejects the high frequency
components at the output. We know that Xc < f (Reactance is directly proportional to the
frequency). At low frequency, reactance is very low so it does not allow the entire signal at
the output. At high frequency, reactance is very high so it does not allow any signal at the
output.

PROCEDURE:
1. The circuit connections are made as per circuit diagram.

2. Switch on the power supply and increase the input frequency in steps of 100 Hz and note
down the corresponding output voltage in the voltmeter.

3. Calculate the gain value.

4. Draw the graph between frequency Vs gain.

MODEL GRAPH
Application:
Amplifiers, oscillators and power supply circuits
RESULT:

Thus the low pass and high pass filter was designed successfully.
VIVA VOCE:

1. What is an ideal low pass filter?

2. What is the difference between an ideal and a practical low pass filter?

3. What is high-pass filter?

4. What are passive filters?

5. What is a band pass filter?

6. Define – Quality Factor

7. What is the range of quality factor for band pass filter?

8. What do you mean by order of filter?

9. What is the importance of higher order filter?

Exp. No: THREE PHASE HALF WAVE CONTROLLED
Date: RECTIFIER FED DC SHUNT MOTOR

AIM:
To simulate the speed control of the DC motor using half wave controlled converter.

APPARATUS:

MAT Lab software

PROCEDURE:

1. Connect DC motor field & armature terminals to respective points in the power
circuit & speed sensor to feedback terminals socket. Connect the voltmeter &
ammeter to the respective points.
2. Circuit connections are made as shown in the circuit diagram.
3. Check the connections and conform the connections made are correct before
switching on mains supply.
4. Keeping all the knobs at minimum position.
5. Keeping PID switches ON (down ward) position.
6. Switch on the field supply to the motor.
7. Switch on the firing controller POWER supply switch.
8. Switch on the Power Circuit. Single phase auto transformer may be used set the
voltage slowly or to avoid sudden surge of current.
9. Set the rpm to suitable value through the knob SET RPM (say 1000rpm).
RESULTS:

Thus the speed control of rectifier fed DC motor is verified through MAT Lab
software.
VIVA QUESTIONS:
1. What is rectifier?
2. What is half wave rectifier?
3. How you measure the speed of dc motor?
4. How to control SCR?
5. What is the function of Thyristorised converter?
6. What is the function of PID controller?
7. What is mean by Isolation transformer?
8. What are the types of DC Motors?
9. What are the advantages of isolation transformer?
10. What are the applications of PID controller?
Exp. No: THREE PHASE FULL WAVE CONTROLLED
Date: RECTIFIER FED DC SHUNT MOTOR

AIM:
To simulate the speed control of the DC motor using half wave controlled converter.

APPARATUS:

MAT Lab software

PROCEDURE
1. Connect DC motor field & armature terminals to respective points in the power
circuit& speed sensor to feedback terminals socket. Connect the voltmeter &
ammeter to the respective points.
2. Circuit connections are made as shown in the circuit diagram.
3. Check the connections and conform the connections made are correct before
switching on mains supply.
4. Keeping all the knobs at minimum position.
5. Keeping PID switches ON (down ward) position.
6. Switch on the field supply to the motor.
7. Switch on the firing controller POWER supply switch.
8. Switch on the Power Circuit. Single phase auto transformer may be used set the
voltage slowly or to avoid sudden surge of current.
9. Set the rpm to suitable value through the knob SET RPM (say 1000rpm).
RESULT:

Thus the speed control of rectifier fed DC motor is verified through MAT Lab
software.
VIVA QUESTIONS:

1. What is full wave converter?

2. What is latching current?
3. What is holding current?
4. What is the emf equation of dc motor?
5. How you measure the speed of dc motor?
6. What is the function of Thyristorised converter?
7. What is the function of PID controller?
8. What is mean by Isolation transformer?
9. What are the types of DC Motors?
10. What are the advantages of isolation transformer?
11. What are the applications of PID controller?