MDS3753E– P-Channel Trench MOSFET

MDS3753E
P-Channel Trench MOSFET, -40V, -7.1A, 30mΩ

General Description Features

The MDS3753E uses advanced Magnachip’s MOSFET
 VDS = -40V
Technology to provide low on-state resistance, high
 ID = -7.1A @ VGS = 10V
switching performance and excellent reliability
 RDS(ON)
<30m @ VGS = -10V
Low RDS(ON) and low gate charge operation offer superior
benefit in the application. <37m @ VGS = -4.5V

Applications
 Inverters
 General purpose applications

5(D)
6(D)
7(D)
8(D)

G
4(G)
3(S)
2(S)
1(S) S

Absolute Maximum Ratings (TA =25oC unless otherwise noted)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS -40 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (Note 1) ID -7.1 A
Pulsed Drain Current IDM -50 A
Power Dissipation PD 2.5 W
Single Pulse Avalanche Energy (Note 2) EAS 98 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics

Characteristics Symbol Rating Unit

Thermal Resistance, Junction-to-Ambient (Note 1) RθJA 50
o
C/W
Thermal Resistance, Junction-to-Case RθJC 25

Jan. 2021. Version 1.2 1 Magnachip Semiconductor Ltd.

 MDS3753E– P-Channel Trench MOSFET
Ordering Information

Part Number Temp. Range Package Packing RoHS Status

MDS3753EURH -55~150oC SO-8 Tape & Reel Halogen Free

Electrical Characteristics (TJ =25oC unless otherwise noted)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = -250μA, VGS = 0V -40 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250μA -1.0 -1.8 -3.0
Drain Cut-Off Current IDSS VDS = -40V, VGS = 0V - - -10
μA
Gate Leakage Current IGSS VGS = ±16V, VDS = 0V - - ±10
VGS = -10V, ID = -3.3A - 20 30
Drain-Source ON Resistance RDS(ON) mΩ
VGS = -4.5V, ID = -3.3A - 27 37
Forward Transconductance gFS VDS = -10V, ID = -3.3A 14 - S
Dynamic Characteristics
Total Gate Charge Qg - 32.7 -
Gate-Source Charge Qgs VDD = -32V, ID = -4.7A,VGS = -10V - 4.1 - nC
Gate-Drain Charge Qgd - 7.4 -
Input Capacitance Ciss - 1423 -
Reverse Transfer Capacitance Crss VDS = -15V, VGS = 0V, f = 1.0MHz - 129 - pF
Output Capacitance Coss - 221 -
Turn-On Delay Time td(on) - 14.7 -
Turn-On Rise Time tr VGS = -10V ,VDD = -20V, ID = -3.3A - 7.1 -
ns
Turn-Off Delay Time td(off) RGEN = 4.7Ω - 44.2 -
Turn-Off Fall Time tf - 9.0 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = -4.7A, VGS = 0V - 0.81 1.2 V
Reverse Recovery Time trr - 34 - ns
IS = -4.7A, di/dt=100A/us
Reverse Recovery Charge Qrr - 36.5 - nC

Note :

1. Surface mounted FR4 board with 2oz. Copper.

2. Starting TJ=25°C, L=1mH, IAS=-14A VDD=-20V, VGS=-10V

Jan. 2021. Version 1.2 2 Magnachip Semiconductor Ltd.

 MDS3753E– P-Channel Trench MOSFET
20 60
VGS = -10V
-4.0V

Drain-Source On-Resistance [mΩ]

-5.0V -3.5V 50
15 -4.5V
-ID, Drain Current [A]

-6.0V

40

10 VGS = -4.5V
30

-3.0V
20
5 VGS = -10V

10

0
0.0 0.5 1.0 1.5 2.0
5 10 15 20
-VDS, Drain-Source Voltage [V] -ID, Drain Current [A]
Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage

1.8
100
※ Notes :
1. VGS = -10 V
1.6 2. ID = -3.3 A
Drain-Source On-Resistance

Drain-Source On-Resistance

80
RDS(ON), (Normalized)

1.4
RDS(ON) [mΩ ],

60
1.2

TA = 125℃
40
1.0

0.8 20
TA = 25℃

0.6
-50 -25 0 25 50 75 100 125 150 0
2 4 6 8 10
o
TJ, Junction Temperature [ C] -VGS, Gate to Source Volatge [V]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage
Area

20
※ Notes :
※ Notes : VGS = 0V
1
VDS = -10V 10
-IDR, Reverse Drain Current [A]

16
-ID, Drain Current [A]

12

TA=25℃
0
10
8

TA=125℃
25℃

-1
0 10
0 1 2 3 4 5 0.2 0.4 0.6 0.8 1.0 1.2

-VGS, Gate-Source Voltage [V] -VSD, Source-Drain voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Jan. 2021. Version 1.2 3 Magnachip Semiconductor Ltd.

 MDS3753E– P-Channel Trench MOSFET
10 2.0n
Ciss = Cgs + Cgd (Cds = shorted)
※ Note : ID = -4.7A Coss = Cds + Cgd
Crss = Cgd
8 1.6n
-VGS, Gate-Source Voltage [V]

Ciss

VDS = -32V

Capacitance [F]
6 1.2n

4 800.0p

※ Notes ;
1. VGS = 0 V
400.0p 2. f = 1 MHz
2
Coss

Crss
0 0.0
0 2 4 6 8 10 12 0 10 20 30
QG, Total Gate Charge [nC] -VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

3
10 10

Operation in This Area

2
is Limited by R DS(on)
10 8
-ID, Drain Current [A]

-ID, Drain Current [A]

100 s
1 1 ms
10 6
10 ms
100 ms
0 1s
10 4
10 s
100 s
DC
-1
10 2
Single Pulse
RthJA=125℃ /W
TA=25℃
-2
10 0
-1 0 1 2
10 10 10 10 25 50 75 100 125 150
-VDS, Drain-Source Voltage [V] TA, Case Temperature [℃ ]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
Temperature

0
10

D=0.5
Zθ JA(t), Thermal Response

0.2

-1
10 0.1

0.05 ※ Notes :
Duty Factor, D=t1/t2
0.02 PEAK TJ = PDM * Zθ JA* Rθ JA(t) + TA
RΘ JA=125℃ /W
0.01
-2
10

single pulse

-3
10
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response Curve

Jan. 2021. Version 1.2 4 Magnachip Semiconductor Ltd.

 MDS3753E– P-Channel Trench MOSFET
Physical Dimensions

8 Leads, SOIC

Dimensions are in millimeters unless otherwise specified

Note : Package body size, length and width do not include mold flash, protrusions and gate burrs.

Jan. 2021. Version 1.2 5 Magnachip Semiconductor Ltd.

 MDS3753E– P-Channel Trench MOSFET

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a Magnachip product. is a registered trademark of Magnachip
Semiconductor Ltd.

Jan. 2021. Version 1.2 6 Magnachip Semiconductor Ltd.