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Paper Major-PYL702 (By Seniors)

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26 views2 pages

Paper Major-PYL702 (By Seniors)

Uploaded by

balharavinay21
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Major: PYL702 - Physics of Semiconductor Devices

Max. Marks: 50, Date: 08/01/2021

1. Describe the Schottky-Mott model and the Bardeen model to explain the barrier height in
Schottky barrier diodes. (4)

2. What are the conditions fulfilled by an ideal MIS capacitor? Draw the energy band
diagram of an ideal MIS capacitor with p-type semiconductor under zero bias. (2+2)

3. The high-frequency C-V characteristic curve of an MOS capacitor is shown in the figure
below. The area of the device is 2103 cm2. The metal semiconductor work function
difference is ms = 0.50 V and the doping concentration in silicon is 21016 cm3. (a) Is
the semiconductor n or p type? (b) What is the oxide thickness? (c) What is the equivalent
trapped oxide charge density? (d) Determine the flat-band capacitance. (e) Draw the
energy band diagram of this MOS capacitor when the voltage across it is 0.0 V.
(1+1+1+2+2)

4. Sketch the distributions of charge density, electric field and potential as a function of
distance for an ideal MIS device under strong inversion condition.
(5)

5. (a) Draw the equivalent circuit of a MIS capacitor when interface trap charges, Qit, are
present at the interface. (b) What is the effect of Qit on the high frequency C-V
characteristic curve of a MIS capacitor? (2+3)
6. What do you understand by the output and transfer characteristics of a MOSFET? How
can we experimentally determine the carrier mobility and threshold voltage of a MOSFET
from its transfer characteristics? (3+3)

7. Explain the origin of subthreshold conduction in the case of MOSFETs. Define the term
subthreshold swing. What is the unit of subthreshold swing? (3+2)

8. What is channel length modulation and why it is important in present day Si based CMOS
transistors? (4)

9. Fill in the blanks or choose the correct option: (10)

a) In an ideal MIS capacitor the work function difference between metal and semiconductor is

equal to …………………………

b) The trans-conductance of a MOSFET is given as…………………….………

c) The transfer characteristics of a MOSFET is a plot between

……………………………………………………….

d) The threshold voltage of an n-channel enhancement mode MOSFET is positive /negative

/equal to zero.

e) The fixed oxide charge in MOS capacitor is located

…………………………………………………………

f) The surface potential of a MIS capacitor at flat-band voltage condition is equal to

….........................................................

g) The SiO2 thin film in a MOS is crystalline/ polycrystalline /amorphous in nature.

h) The value of Dit in a high quality Si/SiO2 based MOS is of the order of ..........………….........

i) The barrier height of an ideal Schottky diode is given as …………………………………………

j) The reverse leakage current in a Schottky barrier diode depends on the following

factors/parameters:.........................................................................................................................

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