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12 views4 pages

Cmvlisi

Uploaded by

sai vasu
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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1.

Define Threshold Voltage and Drive the Vt Equation


for MOS Transistor

Threshold Voltage (Vt) is the minimum gate-to-source voltage (Vgs) required to


create a conductive channel between the source and drain terminals of a MOSFET.
Below this voltage, the MOSFET is in the off state, and above it, the device turns on
and allows current to flow.

Vt Equation: The threshold voltage for a long-channel NMOS transistor can be


derived from the following considerations:

Where:

 Vt0 is the zero-bias threshold voltage.


 Vsb is the source-bulk voltage.
 Γ is the body effect coefficient.

2. Explain the Types of Etching and Photoresist

Types of Etching:

1. Wet Etching: Uses liquid chemicals to remove material. It’s isotropic and can lead to
undercutting.
2. Dry Etching: Uses gases or plasmas for etching, including:

o Reactive Ion Etching (RIE): Directional etching that provides better resolution.
o Deep Reactive Ion Etching (DRIE): Creates deep, vertical structures.

Photoresist:

1. Positive Photoresist: Exposed areas become soluble and are removed during development.
2. Negative Photoresist: Exposed areas become insoluble and remain after development.

3. Define Figure of Merit

Figure of Merit (FoM) is a quantitative measure used to evaluate the performance of


a device or system. In semiconductor devices, it often refers to a trade-off between
speed, power consumption, and other characteristics, helping to identify the best
choice for a specific application.
4. Compare CMOS with BiCMOS

CMOS (Complementary Metal-Oxide-Semiconductor):

o Uses complementary pairs of p-type and n-type MOSFETs.


o Lower static power consumption.
o High noise immunity and high density.

BiCMOS (Bipolar-CMOS):

o Combines CMOS technology with bipolar transistors.


o Offers high speed due to the bipolar transistors.
o Generally higher power consumption than CMOS.
o Used for high-performance applications where speed is critical.

5. What is Pull Up and Pull Down Device?


 Pull-Up Device: Typically a p-type MOSFET that connects the output to the supply voltage
(Vdd) when activated.
 Pull-Down Device: Typically an n-type MOSFET that connects the output to ground (Vss)
when activated.

6. Why NMOS Technology is Preferred More Than


PMOS Technology?
 Higher Electron Mobility: NMOS transistors have higher electron mobility than holes in
PMOS, resulting in better performance (faster switching speeds).
 Smaller Size: NMOS devices can be made smaller for the same performance.

7. What are the Different MOS Layers?

1. Gate Layer: Typically polysilicon or metal.


2. Dielectric Layer: Often silicon dioxide (SiO2).
3. Source/Drain Regions: Heavily doped n-type or p-type semiconductor regions.
4. Body/Bulk Layer: The substrate that supports the MOSFET.

8. What is Stick Diagram?

A Stick Diagram is a simplified representation of a circuit layout, using sticks and


symbols to represent the different components and their connections without detailing
the actual dimensions. It’s a helpful tool for visualizing layout designs.

9. Sketch the Simple AND Gate Schematic Using P-


MOS & N-MOS
10. What is Switch Logic?

Switch Logic refers to the logic design approach using MOSFETs as switches, where
the gate controls the flow of current. Logic levels are represented by the on/off states
of the transistors.

11. Explain Oxidation and Different Types of Oxidation

Oxidation is a process used to grow a silicon dioxide (SiO2) layer on a silicon


substrate. It can be done in various ways:

1. Thermal Oxidation: Heating silicon in an oxidizing environment (wet or dry).

o Wet Oxidation: Uses steam, producing thicker oxide layers.


o Dry Oxidation: Uses oxygen, producing thinner layers with better quality.

12. What are the Advantages of CMOS Process?


 Low Power Consumption: CMOS only consumes power during switching.
 High Noise Immunity: Robust against noise due to complementary design.
 High Density: Allows for a large number of transistors in a small area.

13. What is Channel-Length Modulation?

Channel-Length Modulation occurs in MOSFETs when the effective channel length


decreases as the drain-source voltage increases, leading to an increase in drain current
even beyond saturation. This effect is more pronounced in short-channel devices.

14. What are the Uses of Stick Diagram?


 To visualize the layout of circuits.
 To simplify the design process by abstracting geometrical details.
 To communicate design ideas quickly among engineers.

15. Give the Various Color Coding Used in Stick


Diagram
 Black: Conductors (metal).
 Red: P-MOS transistors.
 Green: N-MOS transistors.
 Blue: Contact/Via.

16. What is Body Effect?

Body Effect refers to the influence of the source-bulk voltage on the threshold
voltage of a MOSFET. When the source potential is raised, the threshold voltage
increases, which can affect the transistor’s operation.
17. Explain the Two Types of Layout Design Rules

1. Geometric Rules: Specify the minimum dimensions of shapes (widths, lengths).


2. Spacing Rules: Define the required distances between different elements to avoid short
circuits and ensure manufacturability.

18. Which MOS Can Pass Logic 1 and Logic 0


Strongly?
 NMOS transistors can pass Logic 0 (ground) strongly.
 PMOS transistors can pass Logic 1 (Vdd) strongly.

19. What is Static CMOS?

Static CMOS refers to a logic circuit design using complementary NMOS and PMOS
transistors that maintain their output state without requiring continuous power supply.
It results in low static power consumption, making it ideal for battery-operated
devices.

A static CMOS gate is a combination of two networks, called the pull-up network
(PUN) and the pull-down network (PDN). The function of the PUN is to provide a
connection between the output and VDD anytime the output of the logic gate is meant
to be 1 (based on the inputs).
Similarly, the function of the PDN is to connect the output to VSS when the output of
the logic gate is meant to be 0 (based on the inputs). The PUN and PDN networks are
constructed in a mutually exclusive fashion such that, one and only one of these
networks is conducting in the steady state.

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