Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

ISD 2024 - Week 4 Assignment

There are 10 questions for a total of 20 marks.

1. (2 marks) According to the depletion approximation, what primarily constitutes the electric field in the
depletion region?
In free
A. Free electrons and holes depletion region
B. Neutral atoms carriers absent So
are
.

C. Ionized dopant atoms contribution is by

imised
D. Both free carriers and dopant atoms .
dopants
For Q2-Q3: Consider an abrupt silicon pn+ (abrupt) junction with a doping profile as shown in the figure
below. Based on the doping profile, answer the following questions.
put ,
xp w

2. (2 marks) Identify the corresponding charge configuration of the pn+ junction.

nt-heavily
doped ,

more

narrower

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

A. (b)

B. (a)

C. (d)

D. (c)

3. (2 marks) Identify the corresponding field profile at the pn+ junction from the figure below.

A. (a)

B. (b)
nt -

heavily doped
E decrease that side
sharply on
.

C. (c)

D. (d)

For Q4-Q5: The doping concentrations in an abrupt silicon pn junction at T = 300 K are Na = 1014 cm 3

and Nd = 1018 cm 3. Assume ni = 1010 cm 3, kT /q = 25 mV at 300 K, ✏Si = 11.9, ✏0 = 8.85 ⇥

10 14 F cm 1.

4. (2 marks) The built-in voltage of the pn junction is V.

(
A. 2.1

It
en
Ubi
B. 1.4
=

C. 0.7

D. 3.5

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 Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

5. (2 marks) The total depletion width of the pn junction is µm.

A. 0.12

B. 3.0

C. 12
=
si
D. 24.5

Reflect and remember: What is the depletion width on the n side (xn ) and p side (xp ) of the
pn junction? Analyze how do the depletion widths change when the doping densities are swapped
and when Nd = Na .

6. (2 marks) Using the depletion approximation, charge configuration and field profiles are given for the PN
(abrupt), PN (linear), and PIN junctions at equilibrium conditions. Choose the CORRECT statement.

Pine junt
>
-
> is

constant
PN(linear) Over

-
Eis depletion
n
tic regi
quadra

Ex
A. (a) (i), (b) (ii).(c) (iii) PN(abrupt] +

either side
linearly
B. (a) (ii), (b) (i), (c) (iii)
on
C. (a) (iii), (b) (i), (c) (ii)

D. (a) (i), (b) (iii), (c) (ii)

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

Reflect and remember: Analyse how the built-in potential for these junctions and understand their
relationship with their depletion width.

7. (2 marks) Consider a uniform p-type bar within which a thin sheet of positive charge has been embedded.
This charge is fixed in the lattice and cannot move. This forces the majority carrier holes to rearrange and
satisfy Poisson’s equation. Assume sheet charge density Qp in it as shown in the figure. Which of the
following figures represents the electric field?

Fixed charge

A. # C.

B. D.

8. (2 marks) Find the magnitude of the electric field at the center of the depletion region of a Si pn junction
with NA = ND = 1015 atoms cm 3 and built-in potential of 0.6 V . Take ✏Si = 12✏0 , where ✏0 =
8.85 ⇥ 10 14 F/cm.

A. 94.5 M V /cm
Eman =

B. 94.5 kV /cm

C. 9.5 M V /cm epletion

D. 9.5 kV /cm

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Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2024

9. (2 marks) (EC-GATE 2016) Consider a silicon p-n junction with a uniform acceptor doping concentration
of 1017 cm 3 on the p-side and a uniform donor doping concentration of 1016 cm 3 on the n-side. No external
voltage is applied to the diode. Assume, ni = 1.5 ⇥ 1010 cm 3, ✏Si = 12 ⇥ ✏0 = 12 ⇥ 8.85 ⇥ 10 14 F/cm.

The magnitude of charge per unit junction area (nC/cm2 ) in the depletion region on the p-side is .

Wp = w
A. 100

B. 500 "bi ,
W
,

ND
C. 50 Na +
D. 20 & =
Wp Na. .
e -
A
10. (2 marks) (EC-GATE 2018) A junction is made between p-Si with doping density NA1 = 1015 cm 3 and
p-Si with doping density NA2 = 1017 cm 3. Given Boltzmann constant K = 1.38 ⇥ 10 23 JK 1 , electronic
charge q = 1.6 ⇥ 10 19 C. At room temperature (T = 300 K), the magnitude of the built-in potential (in
Volts) will be .

Ybi
In
A. 0.12
=

B. 1.2

C. 0.8

D. 2.5

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