ELECTRONIC DEVICES & CIRCUITS

LABORATORY MANUAL
(EEE-218)
(II/IV EEE I SEMESTER)

Prepared by
Ms.V.Shireesha

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

ANIL NEERUKONDA INSTITUTE OF TECHNOLOGY & SCIENCES (A)

(Affiliated to AU, Approved by AICTE & Accredited by NBA) Sangivalasa-531 162,
Visakhapatnam District, Phone: 08933-225083/84/87

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 Anil Neerukonda Institute of Technology & Sciences (Autonomous)
(Affiliated to AU, Approved by AICTE & Accredited by NBA & NAAC with ‘A’ Grade)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam District
Phone: 08933-225083/84/87 Fax: 226395
Website: www.anits.edu.in email: principal@anits.edu.in

Vision of the Institute

ANITS envisions to emerge as a world-class technical institution whose products represent a good blend of
technological excellence and the best of human values.

Mission of the Institute

To train young men and women into competent and confident engineers with excellent communication
skills, to face the challenges of future technology changes, by imparting holistic technical education using the
best of infrastructure, outstanding technical and teaching expertise and an exemplary work culture, besides
molding them into good citizens

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

Vision of the Department

To become a centre of excellence in Education, research and produce high quality engineers in the field of
Electronics and Communication Engineering to face the challenges of future technological changes.

Mission of the Department

1) To achieve vision department will

2) Transform students into valuable resources for industry and society by imparting contemporary technical
education.
3) Develop interpersonal skills and leadership qualities among students by creating an ambience of
academic integrity to participate in various professional activities
4) Create a suitable academic environment to promote research attitude among students.

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam

Program Educational Objectives (PEOs):

PEO1 : Graduates excel in their career in the domains of Electronics, Communication and Information
Technology.
PEO2 : Graduates will practice professional ethics and excel in professional career through interpersonal
skills and leadership qualities.
PEO3 : Graduates demonstrate passion for competence in higher education, research and participate in
various professional activities.
Program Outcomes (POs):
Engineering Graduates will be able to:
1. Engineering knowledge: Apply the knowledge of mathematics, science, engineering fundamentals, and
an engineering specialization to the solution of complex engineering problems.
2. Problem analysis: Identify, formulate, review research literature, and analyze complex engineering
problems reaching substantiated conclusions using first principles of mathematics, natural sciences, and
engineering sciences.
3. Design/development of solutions: Design solutions for complex engineering problems and design
system components or processes that meet the specified needs with appropriate consideration for the
public health and safety, and the cultural, societal, and environmental considerations.
4. Conduct investigations of complex problems: Use research-based knowledge and research methods
including design of experiments, analysis and interpretation of data, and synthesis of the information to
provide valid conclusions.
5. Modern tool usage: Create, select, and apply appropriate techniques, resources, and modern engineering
and IT tools including prediction and modeling to complex engineering activities with an understanding
of the limitations.
6. The engineer and society: Apply reasoning informed by the contextual knowledge to assess societal,
health, safety, legal and cultural issues and the consequent responsibilities relevant to the professional
engineering practice.
7. Environment and sustainability: Understand the impact of the professional engineering solutions in
societal and environmental contexts, and demonstrate the knowledge of, and need for sustainable
development.
8. Ethics: Apply ethical principles and commit to professional ethics and responsibilities and norms of the
engineering practice.
9. Individual and team work: Function effectively as an individual, and as a member or leader in diverse
teams, and in multidisciplinary settings.
10. Communication: Communicate effectively on complex engineering activities with the engineering
community and with society at large, such as, being able to comprehend and write effective reports and

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 design documentation, make effective presentations, and give and receive clear instructions.
11. Project management and finance: Demonstrate knowledge and understanding of the engineering and
management principles and apply these to one’s own work, as a member and leader in a team, to manage
projects and in multidisciplinary environments.
12. Life-long learning: Recognize the need for, and have the preparation and ability to engage in
independent and life-long learning in the broadest context of technological change.

Program Specific Outcomes (PSOs):

PSO1 : Implement Signal & Image Processing techniques using modern tools.
PSO2 : Design and analyze Communication systems using emerging techniques.
PSO3 : Solve real time problems with expertise in Embedded Systems.

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 ELECTRONICS DEVICES CIRCUITS LABARATORY
EEE 218 Credits: 2
Instruction: 3 Practicals / Week Sessional Marks: 50M
End Exam: 3 hrs End Exam Marks: 50M

COURSE OUTCOMES:
1. Measure the important parameters of a PN diode from the V-I characteristics.
2. Analyze different rectifier circuits and voltage regulation circuits
used in regulated Power supplies and Zener diode.
3. Analyze different configuration to determine the h-parameters..
4. Analyze the switching characteristics of BJT & SCR.
5. Analyze different logic circuits by using PN diode, BJT.

CO-PO Mapping
Mapping of course outcomes with program outcomes& program specific outcomes:

PO1 PO2 PO3 PO4 PO8 PO9 PO10 PSO1

CO1 1 0 3 0 1 1 1 1
CO2 2 0 3 0 1 1 1 2
CO3 2 0 3 0 1 1 1 2
CO4 2 0 3 0 1 1 1 2
CO5 2 0 3 0 1 1 1 2

Mapping of course outcomes with:

Correlation levels 1: Slight (Low) 2: Moderate(Medium) 3: Substantial (High)

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam
Scheme of Evaluation

(ELECTRONIC DEVICES AND CIRCUITS LABORATORY)

Total marks for each student to evaluate in lab: 100 marks

Out of 100 marks:
External exam Evaluation: 50 marks
Internal Evaluation marks: 50 marks

Internal Marks (50M):

Internal lab Exam :25M
Continuous evaluation :25 M

Distribution of Continuous evaluation marks:

a) Viva on every lab session : 5M
b )Observation with final results : 5M
c) Record : 10M
d) Attendance : 5M

Distribution of Record Marks (20M): (scaled to 10M)

a) Aim and apparatus : 3M
b) Circuit diagrams : 2M
c) Theory : 4M
d) Tabular from & calculations : 4M
e) Procedure with theoretical calculations : 4M
f) Graph : 2M
g) Result/Conclusion : 1M

Internal / External Lab Marks division:

Internal Exam (25 M) External Exam (50 M)
Write Up : 10M Write Up :10M
Execution/Performance : 10M Execution :20M
Graphs & Result : 5M Graphs & Result :10M
Viva : 5M Viva :10M

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam

RUBRICS
S.No Competency Performance Indicator
1. Demonstrate an ability to conduct Laboratory preparation & finding the appropriate values of the
experiments consistent with their level of components to meet the specifications (verification of Lab observation)
knowledge and understanding.
Stating clearly the aim of the experiment, its scope and importance for
purpose of doing experiment & Oral Presentation (Based on viva)
2. Demonstrate an ability to design Experimental procedures & ability to construct the circuit diagram on a
experiments to get the desired output. bread board and use meters/ instruments to record the measured data
according to the range selected (Based on physical
observation)
3. Demonstrate an ability to analyze the Presentation of record & Conclusions of the lab experiment performed.
data and reach valid conclusions. (Based on Lab record)

S.N Performance Indicator Excellent Good(B Need improvement Fail (D)

o (A) ) 80% (C) 60% <40%
100%
1. Laboratory preparation & Read and understand the Observations are completed Observation s are No
ability to construct the lab manual before with necessary theoretical incomplete effor
circuit diagram on a bread coming to lab. Calculations but With-out &Obtai t exhibited
board and use meters/ Observations are proper understanding & n the incorrect values
instruments to record the completed with necessary Obtain the correct values for components.
measured data according theoretical calculations for only few components Lacks the appropriate
to the range selected including the use of units after calculations. Follow knowledge of the lab
(Based on and significant figures & the given experimental procedures. Has
physica Obtain the correct values procedures, but obtained no idea what to do
l observation) (5M) of the components after results with some errors.
calculations. Follow the
given
experimenta
l procedures, to obtain the
desired output.
2. Stating clearly the aim of Clearly describes the Clearly describes the Some idea of doing No
the experiment, its scope purpose of purpose of experiment but not effor
and importance doing doing very clear & responds t exhibited
for purpose of doing experiment and its scope. experiment. Responds in in giving answers to
experiment & Oral Responds confidently, giving answers to questions questions but all
Presentation (Based on and precisely in giving but some answers are answers are wrong.
viva)(5M) answers to questions wrong.
correctly

3. Presentation of record & Well-organized, Presentation of record Presentation of No

Conclusions of the lab interesting, acceptable record lacks clarity effor
experiment performed. confident and organized t exhibited
(Based on presentation of record &
Lab able to correlate the
record)(10M) theoretical concepts with
the concerned lab results
with appropriate reasons.

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam

About EDC Lab

In EDC Lab, the students will study and analyze the basic electronic devices like
different diodes, BJTs and JFETs . Rectifiers are introduced and their performances with
different types of filters are observed. The basic amplifier circuit is designed and its
frequency response characteristics are observed . With this knowledge students, will be
able to do mini-projects with the help of diodes and transistors.

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam

LIST OF MAJOR EQUIPMENT IN EDC-II/EDC LABORATORY

SL.No NAME OF THE MAKE QUANTITY

EQUIPMENT
1. 20 MHz DUAL TRACE AP LAB 16
OSCILLOSCOPE /SCIENTIFIC
2. 1 MHz FUNCTION AP LAB/ PACIFIC 14
GENERATOR WITH
DIGITAL DISPLAY
3. TRPS 0-30V, 2A DUAL ITL
ITL/PACIFIC 16
CHANNEL /FALCON
4. DC MICRO & MILLI MECO/HI- Q/AQUILA 47
AMMETERS
5. DC MICRO VOLTMETER MECO/HI-
MECO Q/AQUILA 13
6. BENCH TOP DIGITAL METRAVI/ MECO 15
MULTIMETER
7. 5KVA SERVO HI- Q 01
CONTROLLED
STABILIZER

TOTAL EXPENDITURE OF THE LABORATORY (including consumables): Rs. 13,78,942.41/-

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam

EDC-II Laboratory

Do’s
1. Be punctual and regular to the laboratory.

2. Maintain Discipline all the time and obey the instructions.

3. Check the connections properly before turning ON the circuit.

4. Turn OFF the circuit immediately if you see any component heating.

5. Dismount all the components and wires before returning the kit.

6. Any failure / break-down of equipment must be reported to the faculty

Don’ts
1. Don’t touch live electric wires.

2. Don’t turn ON the circuit unless it is completed.

3. Avoid making loose connections.

4. Don’t leave the lab without permission.

5. Do not handle any equipment without reading the instructions/Instruction manuals.

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam

ELECTRONIC DEVICES & CIRCUITS LABORSTORY

LIST OF EXPERIMENTS

Sl.No NAME OF THE Page

EXPERIMENT No.s
1. Study of CRO and Applications 4

2. V-I Characteristics of PN Junction Diode 8

3. V-I Characteristics of Zener Diode and Zener regulator characteristics. 11

4. V-I Characteristics of LED 15

5. Half-wave rectifier without and with filter 17

6. Full-wave rectifier without and with filter 21

7. Characteristics of BJT in CB configuration, h-parameters 25

8. Characteristics of BJT in CE configuration, h-parameters 28

9. Drain and transfer characteristics of JFET 32

10. Transistor as a switch 35

11. Implementation of logic gates using diodes and transistors. 37

12. SCR Characteristics 41

13. Unijunction Transistor (UJT) Characteristics 44

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 EXPERIMENT 1
STUDY OF CATHODE RAY OSCILLOSCOPE AND APPLICATIONS

AIM: To study the front & back panels of a cathode ray oscilloscope. And also to observe different
waveforms like sinusoidal, square and triangular that are generated by function generator.

APPARATUS:
Cathode ray oscilloscope,
Audio frequency probe or audio frequency generator,
Connecting wires.

THEORY: CRO is an electronic device which is capable of giving a visual indication of a signal waveform.
With an oscilloscope the waveform of the signal can be studied with
Respect to amplitude distortion and deviation from the normal. Oscilloscope can also be used for measuring
voltage, frequency and phase shift.

Cathode Ray Tube: Cathode Ray Tube is a heart of Oscilloscope providing visual display of the input signals.
CRT consists of three basic parts.

1.Electron Gun.
2.Deflecting System.
3.Flouroscent Screen
These essential parts are arranged inside a tunnel shaped glass envelope.

Electron Gun: The function of this is to provide a sharply focused stream of electrons. It mainly consists of
an indirectly heated cathode, a control grid, focusing anode and accelerating anode. Control grid is cylinder
in shape. It is connected to negative voltage w.r.t to cathode. Focusing and accelerating anodes are at high
positive potential. w.r.t anode. Cathode is indirectly heated type & is heated by filament. Plenty of electrons
are released from the surface of cathode due to Barium Oxide coating. Control Grid encloses the cathode and
controls the number of electrons passing through the tube.
A voltage on the control grid consists the cathode determines the number of electrons freed by heating which
are allowed to continue moving towards the face of the tube. The accelerated anode is heated at much higher
potential than focusing anode. Because of this reason the accelerating anode accelerates the light beam into
high velocity. The beam when strikes the screen produces the spot or visible light.
The name electron Gun is used because it fires the electrons like a gun that fires a bullet.

Deflection system: The beam after coming out of the accelerated anode passes through two sets of deflection
plates with the tube . The first set is the vertical deflection plate and the second set is horizontal deflection
plates. The vertical deflection plates are oriented to deflect the electron beam that moves vertically up and
down. The direction of the vertical deflection beam is determined by the voltage polarity applied to the
plates. The amount of deflection is set by the magnitude of the applied voltage. The beam is also deflected
horizontally left or right by a voltage applied to horizontal plates. The deflecting beam is then further
accelerated by a very high voltage applied to the tube.

Fluorescent Screen: The screen is large inside the face of the tube and is coated with a thin layer of
florescent material called Phosphor. On this fluorescent material when high velocity electron beam strikes its

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converting the energy of the electron the electron beam between into visible light(spots). Hence the name is
given as fluorescent screen.

FRONT PANEL OF CATHODE RAY OSCILLOSCOPE(CRO)

PANEL CONTROLS:

1. POWER ON/OFF : Push the button switch to supply power to the instrument.
2. X5 : Switch when pushed inwards gives 5 times magnification of the X signal
3. XY : Switched when pressed cut off the time base and allows access the exit
horizontal signal to be fed through CH II
( used for XY display).
4. CH I/CH II/TRIG I/ : Switch out when selects and triggers CH I and when
TRIG II pressed selects and triggers CH II.
5. MOO/DUEL : Switch when selects the dual operation switch
6. ALT/CHOP/ADD : Switch selects alternate or chopped in dual mode. If mode is selected then this
switch enables addition or subtraction of the channel i.e. CH-I +/- CH-II.
7. TIME/DIV : Switch selects the time base speed.
8. AT/NORM : Switch selects AUTO/NORMAL position .Auto is used to get trace when no
signal is fed at the input. In NORM the trigger level can be varied from the
positive peak to negative peak with level control.
9. LEVEL : Controls the trigger level from the peak to peak amplitude signal.
10. TRIG.INP : Socket provided to feed the external trigger signal in EXT. mode.
11. CAL OUT : Socket provided for the square wave output 200 mv used for probe
compensation and checking vertical sensitivity etc.
12. EXT : Switch when pressed allows external triggering signal to be fed from the
socket marked TRIG.INP.
13. X-POS : Controls the horizontal position of the trace.

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14. VAR : Controls the time speed in between two steps of time/div switch .For
calibration put this fully anticlockwise (at cal pos)
15. TV : Switch when it allows video frequency aupto 20 KHz to be locked.
16. + - : Switch selects the slope of trigger whether positive going or negative.
17. INV CHJ II : Switch when pressed inverts the CH ii.
18. INTENS : Controls brightness of trace.
19. TR : Controls the alignment of the trace with gratitude (screw driver adjustment).
20. FOCUS : Controls the sharpness of the trace.
21. CT : Switch when pressed starts CT operation.
22. GD/AC /DC : Input coupling switch for each channel. In AC the signal is coupled through
the 0.1MFD capacitor.
23. DC/AC/GD : BNC connectors serve as input connectors for the CH I and CH II channel
input connector also serves as the horizontal external signal.
24. CT-IN : To test any components in the circuit, put one test probe in this socket and
connect the other test probe in the ground socket.
25. VOLTS /DIV : Switches select the sensitivity of each channel.
26. Y POS I AND II : Controls provided for vertical deflection for each channel.

BACK PANEL CONTROLS

1. FUSE : 350 mA fuse is provided at the back panel spare fuses are provided inside the
instrument.
2. ZMOD : Banana socket provided for modulating signal input i.e. Z-modulation.

PROCEDURE:

1. Turn on the power.

2. In function generator required frequency & voltage is set. Press the SINE Button to get the Sinusoidal
waveform.
3. In CRO the sine wave is adjusted The amplitude of the wave is obtained from the vertical axis.If required
use multiplication factor to find the appropriate Voltage.
4. Time period is calculated from X-axis.
5. Frequency is obtained by formula F=1/T.
6. This frequency is compared with t6he frequency applied.
7. Voltage in the CRO is compared with the voltage applied from function generator.
8. By repeating the above steps we can find frequency and voltages o0f square wave & triangular waves can
be calculated.

PRECAUTIONS
1. Avoid using CRO in high ambient light conditions.
2. Select the location free from Temperature & humidity. It should not be used in dusty environment.
3. Do not operate in a place where mechanical vibrations are more or in a place which generates strong
magnetic fields or impulses.
5. Do not increase the brightness of the CRO than that is required.

RESULT: The Front and Back Panels of CRO are studied. The different waveforms like sinusoidal, square

15
and triangular that were generated using Function generator are observed in CRO and its amplitudes,
frequencies and time periods are obtained both practically and theoretically.

VIVA QUESTIONS:
1. What is the function of horizontal and vertical deflection coil?
2. What type of deflection is used in CRO?
3. Explain Front Panel of CRO.
4. What is the function of Triggering?
5. Draw CRT diagram.

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 EXPERIMENT 2
V-I CHARACTERISTICS OF PN JUNCTION DIODE

AIM: To plot the V-I characteristics of PN junction diode in forward and reverse bias and also to calculate Static and
Dynamic Resistance.

APPARATUS:
1. 1N4007 Diode.
2. Resistor 470 Ω, 1KΩ.
3. Ammeter (0-100mA), (0-100µA).
4. Voltmeter (0-2V), (0-30V).
5. TRPS (0-30V)
6. Bread Board with connecting wires.

CIRCUIT DIAGRAM:

Forward Bias:

470 (0-100mA)
ohms + -
mA

1
TRPS + A +
IN4007 V
(0-30V) (0-2V)
- K -
2

Reverse Bias

1K (0-100µA)
ohms + -
µA

1
TRPS + +
IN4007 K V
(0-30V)
- -
2
A (0-30V)

TABULAR FORMS:

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Forward bias: Reverse bias:

VS Vf If VS Vr Ir
(Volts) (Volts) (mA) (Volts) (Volts) (μA)

MODEL GRAPH:
If(mA) Forward characteristics

Vr(V) V Vf(V)

Reverse characteristics
Ir(µA)

PROCEDURE:
Forward bias:
1. Make the Connections according to circuit diagram.
2. In forward bias, connect the positive end of battery to Anode and negative end of the battery to Cathode of diode.
3. By varying the input voltage in steps of 0.1V, note corresponding Voltmeter and Ammeter readings.
4. Plot the graph between forward voltage (Vf) and forward current (If).

Reverse bias:
1. Make the Connections according to circuit diagram.
2. In reverse bias, connect the positive end of battery to Cathode and negative
end of the battery to Anode of diode.
3. By varying the note corresponding Voltmeter and Ammeter readings.
4. Plot the graph between Reverse voltage (Vr) and Reverse current (Ir).

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CALCULATIONS: i. Static resistance = V / I at Q-point
ii.Dynamic resistance = ΔV / ΔI at Q-point

PREACAUTIONS:
1. Connections must be made carefully to avoid short circuit.
2. Readings must be taken without parallel ox error

RESULT:
The V-I Characteristics of a pn-diode are observed and the graphs are plotted. And the values obtained from
the graph are
1. Static resistance =
2. Dynamic resistance=
3. Cut-in Voltage =

VIVA QUESTIONS:
1. When diode acts like ideal switch?
2. What is the cut in voltage? And give the typical values for Ge and Si.
3. What is reverse saturation current?
4. What is Dynamic and static resistance?
5. What is V-I characteristics equation?
6. What is depletion layer?
7. What are P type and N type materials? And what IN4007 Diode indicates?
8. What is the effect of temperature on Ico ,Ve?
9. What is Q point?

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 EXPERIMENT 3
V-I CHARACTERISTICS OF ZENER DIODE AND ZENER DIODE REGULATOR

AIM: To plot the V-I characteristics of Zener Diode in reverse bias and to verify that Zener Diode acts as a
Voltage Regulator.

APPARATUS:
1) Zener diode IMZ5.1 V.
2) 470Ω resistor.
3) Ammeter (0-50mA).
4) Voltmeter (0-10V).
5) TRPS (0-30V).
6) Bread Board.
7) Decade Resistance Box (DRB).
8) Connecting Wires.

CIRCUIT DIAGRAM:
Reverse bias characteristics:

(0-100mA)
470Ω + -
A

(0-30)Vs K
+
IMZ5.1 VR
_
A -

PROCEDURE:

a) To Plot V-I Characteristics

1. Make the connections as shown in the circuit diagram.
2. Vary the RPS voltage from 0V to 30V in steps of 1V.
3. Tabulate the readings of Ammeter (IZ) and Voltmeter (VZ).
4. Plot the graph between VZ & IZ.
5. Calculate the break down voltage of given zener diode from the graph

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TABULAR FORM: (V-I Characteristics)

S.No. VS (Volts) VZ (Volts) IZ (mA)

MODEL GRAPH:
Reverse characteristics

Vz

Vr(V)

Ir(mA)

CIRCUIT DIAGRAM:

Zener diode as Voltage Regulator:

(0-100mA)
470Ω + -
-

+
(0-10)V
+ K VL
IMZ5.1
VSZ RL - _
- A

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TABULAR FORM: (Regulation Characteristics)

VNL =………….

IS=(IZ+IL) % Regulation
S.No. RL (ohms) VL (Volts)
(mA) ((VNL-VL) /VL) X 100

1100Ω
to
100Ω

PROCEDURE:
b) As Voltage Regulator:
1. Make the connections as shown in figure 2.
2. Measure VNL (No load voltage) by opening the load resistance.
3. Connect the load resistance, and vary the load resistance from 1100Ω to 100Ω
in steps of 100Ω and note down the readings of Voltmeter (VZ) and
Ammeter (IS).
4. Calculate % Regulation by using the formula given below.

%Regulation = ((VNL-VL) /VL) X 100

MODEL GRAPH:

%Regulation Better Regulation

Poor Regulation

RL (Ω)

Regulation characteristics

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PREACAUTIONS:

1. Connections must be made carefully to avoid short circuit.

2. Readings must be taken without parallax error.
3. The readings should not exceed meter range.

RESULT:

1.The reverse bias characteristics of Zener diode are observed and the graph was plotted. And the
breakdown voltage was obtained from the graph.

2.The Regulation characteristics of a Zener Diode are observed and the graph was plotted.

VIVA QUESTIONS:

1. Difference between Zener and Avalanche breakdown.

2. What is the difference between zener and ordinary diode?
3. Draw equivalent circuit for Zener diode.
4. What is Breakdown voltage?
5. What are the applications of zener diode?
6. How zener acts as a regulator?
7. What does IMZ5.1V indicates?

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 EXPERIMENT 4
V-I CHARACTERISTICS of LIGHT EMITTING DIODE (LED)

AIM: To determine the forward bias characteristics of the light emitting diode (LED).

APPARATUS: 1. L.E.D
2.470 resistor
3. Ammeter (0-100ma)
4. Voltmeter (0-20v)
5. TRPS
6. Bread board
7. Connecting wires

CIRCUIT DIAGRAM

PROCEDURE:
1. COnnections must be made as per the circuit diagram.
2. By varying the voltage in steps corresponding current in the ammeter is noted.
3. At the same time the glow intensity of the light emitting diode is also to be noted.
4. Taking voltage on X-axis and current on Y-axis that gives the forward bias V-characteristics, plot a graph.

TABULAR FORM:
Intensity of
S.NO VS(V) VF(V) If(mA) glow

MODEL GRAPH:

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 If(mA)

Vf(V)

PRECAUTIONS:
1.Connections must be made carefully to avoid short circuit.
2.Readings must be taken without parallel-ox error.
3.readings should not exceed meter range.

RESULT: The forward characteristics of a light emitting diode are obtained and the graph was plotted.

VIVA QUESTIONS:
1. What is LED?
2 Which materials are used in manufacturing of LEDs?
3. What are the applications of LEDs?
4. How LED is different from ordinary diode?
5. What is the difference between direct band gap and indirect bandgap semiconductor?

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 EXPERIMENT-5
HALF WAVE RECTIFIER WITHOUT AND WITH FILTER

AIM: To observe the output waveforms and to find ripple Factor of a Half Wave Rectifier with and without
filter.

APPARATUS: 1. 0-12V Step down Transformer – 1no.

2. IN 4007 Diode – 1no.
3. 0-30V Voltmeter or Millimeter/DMM – 1no.
4. 1000Ω resistor – 1no.
5. 1000µf/25V capacitor – 1no.
6. Bread Board.
7. Connecting wires.

CIRCUIT DIAGRAM: Half Wave Rectifier Without Filter:

Step Down
Transformer
(230/12V)) D1

ph
1N4007 K
A
+ +
12V AC 1KΩ
230V 50Hz RL
50Hz V (0-20v) CRO

- -

TABULAR FORM: Without filter:

1) Using CRO

Vm (V) Vdc=Vm/Π(V) Vrms=Vm/2(V) Vr (rms)=√ (Vrms2 – Vdc2) (V) R.F =Vr (rms) / Vdc

2) Using DMM:
VAC VDC R.F=VAC/VDC

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 HALF WAVE RECTIFIER WITH CAPACITOR FILTER

TABULAR FORM:

With filter:

1. Using CRO

Vr (V) Vm (V) Vdc =Vm- Vr/2 Vr (rms) =Vr / 2√3 R.F = Vr (rms) / Vdc

2. Using DMM:

VAC VDC R.F=VAC/VDC

PROCEDURE: With & Without Filter:

1) Connections are made as per the circuit diagram.
2) Observe the output waveform on CRO. Note down the peak voltage value V M.Using DMM/multimeter
down the AC voltage and DC voltage.
3) Now calculate Vdc,Vrms, Ripple Factor and other parameters of half wave rectifier according to the
formulae.
4) Now connect a shunt capacitor and repeat the above process.
5) For with filter put CRO in ac mode, and find out the value of V r. And calculate Vdc and Vr(rms) and other
parameters.
6) Plot the graphs.

27
MODEL GRAPHS:
Vi
Input waveform

Vm

Time(ms)
Vm
V0
Output without filter

Time(ms)
Output with filter
V‫ﻻ‬

Time(ms)

CALCULATIONS:
Without filter:

1. Vdc = Vm / Π
2. Vrms = Vm / 2
3. Vr(rms) = √Vrms2 – Vdc2
4. Ripple Factor = Vr(rms) / Vdc

With filter:
1. Vdc = Vm -Vr/2
2. Vr (rms) = Vr / 2√3
3. Ripple Factor = Vr(rms) / Vdc

Theoretical Calculations:
Ripple factor= 1/(2√3fRC)

28
PRECAUTIONS:

1. Connections must be made carefully to avoid short circuit.

2. Readings must be taken without parallel ox error.

RESULT:
The output waveforms are observed and Ripple factor of a Half wave rectifier with filter and without filter
are obtained as
1. Ripple factor of Half wave rectifier with out filter =
2. Ripple factor of Half wave rectifier with filter =

VIVA QUESTIONS:

1. What is rectifier?
2. What is filter?
3. Define Ripple factor. What is the ripple factor value of rectifier with & without
filter?
4. What is Peak inverse voltage? Give the value of PIV for half wave rectifier.
5. How capacitor acts as filter?
6. Give the efficiency & Ripple frequency output with and without filter.

29
 EXPERIMENT 6
FULL WAVE RECTIFIER WITH & WITHOUT FILTER

AIM: To observe the output waveform and to find ripple factor of the center tapped full wave rectifier.

APPARATUS: 1. Center tapped Step down transformer

2. IN4007 diodes –2
3. Resistor 1000Ω
4. 1000μf/25v capacitor
5. Voltmeter (0-20v)
6. Bread board.
7. Connecting wires.

THEORY:
In this the circuit has 2 diodes d1 &d2 as shown .A center tapped secondary winding AB is used with diodes
connected so that each uses one half of the input voltage. During positive half cycle, voltage polarities are
shown,D1 is in forward bias and D2 is in reverse bias and hence current flows through D1 acts as short
circuit. The current in negative half cycle flows through D2 and D1 acts as open circuit. The current in both
half cycles through the load is in same direction. Therefore dc output across the load resistance should be
noted. Vm is the maximum voltage across secondary winding since at any time one diode conducts and
while other doesn’t. The whole secondary voltage would appear across non conducting diode consequently
peak inverse voltage (PIV=2Vm).A filter circuit is a device which removes a.c component of output. It
consists of a capacitor placed across rectifier output in parallel with load R L.

CIRCUIT DIAGRAM:

CRO/DMM

CRO/DMM

30
TABULAR FORM:

WITHOUT FILTER:

1) Using CRO

Vm Vdc= 2Vm / Π Vrms=Vm/√2

Vr (rms)=√ (Vrms2 – Vdc2) (V) R.F =Vr (rms) / Vdc
(V) (V) (V)

2) Using DMM:
VAC VDC R.F=VAC/VDC

WITH FILTER:

1) Using CRO:

Vr (V) Vm (V) Vdc = Vm- Vr/2 Vr (rms) = Vr / 2√3 R.F = Vr (rms) / Vdc

2) Using DMM:

VAC VDC R.F=VAC/VDC

31
MODEL GRAPHS:

Input waveform

Vm

Time(ms)

Output without filter

VO

Output with filter Time(ms)

VO

Time(ms)

PROCEDURE: With & Without Filter:

1. Connections are made as per the circuit diagram.
2. Observe the output waveform on CRO. Note down the peak voltage value V M.
3. Using DMM/multimeter down the AC voltage and DC voltage.
4. Now calculate Vdc,Vrms, Ripple Factor and other parameters of Half wave rectifier
according to the formulae.
5. Now connect a shunt capacitor and repeat the above process.
6. For with filter put CRO in ac mode, and find out the value of V r.qand calculate Vdc and Vr(rms)
and other parameters.
7. Plot the graphs.

CALCULATIONS:

Without filter:
1. Vdc=2Vm / Π
2. Vrms=Vm/√2
3. Vr(rms) =√ Vrms2 – Vdc2
4. Ripple Factor r = (Vr)rms / Vdc

32
With filter:
1. Vdc=Vm-Vr/2
2. (Vr)rms=Vr/2√3
3. Ripple Factor r = (Vr)rms / Vdc

Theoretical Calculation: R.F = 1/(4√3fCR)

PRECAUTIONS:
1. Avoid loose and wrong connections
2. Avoid parallax error.

RESULT: The output waveforms are observed and Ripple factor of a Full wave rectifier with filter and
without filter are obtained as
1. Ripple factor of full wave rectifier without filter =
2. Ripple factor of full wave rectifier with filter =

VIVA QUESTIONS:
1. What is a full wave rectifier?
2. How Diode acts as a rectifier?
3. What is the significance of PIV requirement of Diode in full-wave rectifier?
4. Compare capacitor filter with an inductor filter?
5. Draw the o/p wave form without filter? Draw the O/P? What is wave form with filter?
6. What happens to the o/p wave form if we increase the capacitor value? What happens if we increase
the capacitor value?
7. What is meant by ripple factor? For a good filter whether ripple factor should be high or low? What
happens to the ripple factor if we insert the filter?
8. What is meant by regulation? Why regulation is poor in the case of inductor filter?
9. What is the theoretical maximum value of ripple factor for a full wave rectifier?

33
 EXPERIMENT 7
CHARACTERISTICS OF BJT IN CB CONFIGURATION, h-PARAMETERS

AIM: To plot the input and output characteristics of a transistor in CB Configuration and to compute the h
- parameters.

APPARATUS: 1. (0-30) V TRPS --------------------------2no.s

2. 1KΩ resistors ----------------------------2no.s
3. (0-100) mA ammeters --------------- 2no.s
4. (0-2) V & (0-20) V Voltmeters -----1no. (each)
5. BC 107 transistor----------------------1no.
6. Bread Board
7. Connecting wires.

CIRCUIT DIAGRAM:
(0-100)mA 1KΩ
- +
A
1KΩ (0-100)mA
-
+ A
E
3C
3C
+
BC107
B (0-20)V
- - + Vcc
VEE
vEB (0-2)V - VCB
(0-30)V
(0-30)V + -
+
+

MODEL GRAPH: INPUT CHARACTERISTICS:

34
TABULAR COLUMN:

INPUT CHARACTERISTICS:

VCB = 0V VCB = 10V VCB = 20V

VBE (V) IE (mA) VBE (V) IE (mA) VBE (V) IE (mA)

OUTPUT CHARACTERISTICS:

OUTPUT CHARACTERISTICS:

IE = 0 mA IE = 5 mA IE = 10 mA

VCB (V) IC (mA) VCB (V) VCB (V) IC (mA)

IC (mA)

35
PROCEDURE:
1. Make connections as shown in circuit diagram.
2. For I/P characteristics keep VCB constant at 0 V and vary voltage VBE slowly in steps of 0.1 V and note
down the corresponding values of IE .
3. Repeat the same procedure for VCB = 5 V and VCB =10 V. Vary the voltage source V2 for adjusting VCB
to 5 V and 10 V.
4. For O/P characteristics keep IE constant at 0 mA and vary voltage VBC vary slowly insteps of 1 V and
note down the corresponding values of IC .
5. Repeat the same procedure for IE = 5 mA and IE = 10 mA. Vary the voltage source V1 for adjusting IE
to 5 mA and 10 mA.
6. Plot the I/P & O/P characteristics and calculate the h – parameters from the graph using the formulae
given below.

CALCULATIONS:

1. Input Impedance Gain hib = Δ VEB / Δ IE at VCB = constant

2. Reverse Voltage Gain hrb = ΔVEB / ΔVCB at IE = constant
3. Output Admittance, hob = Δ IC / Δ VCB at IE = constant
4. Forward Current Gain, hfb = Δ IC / Δ IE VCB = constant

PRECAUTIONS:
1. Connections must be made carefully to avoid short circuit.
2.Readings must be taken without parallax error.
3.The readings should not exceed the meter range.

RESULT: The input and output characteristics of transistor in CB configuration was observed and the graphs
are plotted. And the h-parameters of CB configuration are obtained as hib= hrb = hob = hfb =

VIVA QUESTIONS:
1.What is Early effect?
2.Draw the small signal model of BJT Common Base Configuration.
3.What is Reach –Through effect?
4.What are the applications of Common Base.
5.What will be the parameters of CB.
6.What is Transistor action?

36
 EXPERIMENT 8
CHARACTERISTICS OF BJT IN CE CONFIGURATION, h-PARAMETERS

AIM: To plot the input and output characteristics of a transistor in CE Configuration and to compute the h –
parameters.

APPARATUS: 1. (0-30) V TRPS ----------------------------2no.s

2. 1K, 300K resistors ----------------------1no. (each)
3. (0-100) μA, (0-100) mA ammeters ---1no. (each)
4. (0-2) V & (0-20) V Voltmeters -------1no. (each)
5. BC 107 transistor------------------------1no.
6. Bread Board
7. Connecting wires.

CIRCUIT DIAGRAM:

(0-100)mA 1 KΩ
- +
A
300 KΩ (0-100)uA 3
+ -
A 2
BC107
+
Vce
+ (0-20)V
Vbe 1 - VCC (0-30)V
VBB (0-30)V
- (0-2)V

Tabular Form: INPUT CHARACTERISTICS:

VCE= 0 V VCE= 10 V VCE = 20 V

VBE (V) IB (μA) VBE (V) IB (μA) VBE (V) IB (μA)

37
MODEL GRAPHS:

OUTPUT CHARACTERISTICS:

38
Tabular Form: OUTPUT CHARACTERISTICS:

IB = 0 μA IB = 10 μA IB = 20 μA

VCE (V) IC (mA) VCE (V) IC (mA) VCE (V) IC (mA)

PROCEDURE:

1. Make connections as shown in circuit diagram.

2. For I/P characteristics keep VCE constant at 0 V and vary voltage VBE slowly in steps of 0.1 V and note
down the corresponding values of IB. Repeat the same procedure for VCE = 10 V and VCE = 20 V. Vary the
voltage source V2 for adjusting VCE to 10 V and 20 V.
3. For O/P characteristics keep IB constant at 0 μA and vary voltage VCE slowly in steps of 1 V and note
down the corresponding values of IC . Repeat the same procedure for IB = 10 μA
and IB = 20 μA. Vary the voltage source V1 for adjusting IB to 10 μA and 20 μA.
4. Plot the I/P & O/P characteristics and calculate the h – parameters from the graph using the formulae given
below.

CALCULATIONS:

1. Input Impedance Gain hie = Δ VBE / Δ IB at VCE = constant

2. Reverse Voltage Gain hre = ΔVBE / ΔVCE at IB = constant
3. Output Admittance, hoe = Δ IC / Δ VCE at IB = constant
4. Forward Current Gain, hfe = Δ IC / Δ IB VCE = constant
PRECAUTIONS:
1. Connections must be made carefully to avoid short circuit.
2. Readings must be taken without parallel ox error.
3. The readings should not exceed the meter range.

RESULT: The input and output characteristics of transistor in CE configuration was observed and the graphs
are plotted. And the h-parameters of CE configuration are obtained as hie= hre = hoe = hfe =

39
VIVA QUESTIONS:
1. Why CE configuration is most widely used?
2. Draw the equivalent circuit of C.E.
3. What is the Current Gain,voltage gain,i/p and o/p impedance in CE?.
4. Give the Relation between ‘’ and ‘’ and γ
5. Give the condition to operate the given Transistor in active, saturation & cut-off regions.
6. What is Emitter Efficiency?

40
 EXPERIMENT 9
DRAIN & TRANSFER CHARACTERISTICS OF JFET CHARACTERISTICS

AIM: To plot the Drain and Transfer characteristics of a given JFET and to calculate the Drain Resistance
rd, mutual Conductance gm & Amplification factor μ.

APPARATUS: 1. TRPS (0-30v)- 2no.

2. (0-2)V & (0-20)V Voltmeters – 1no. (each),
3. JFET BFW10-1
4. Connecting wires
5. Bread board
6. 1KΩ resistance.

CIRCUIT DIAGRAM:
(0-50mA)
- + 1K
D A
G
BFW 10
- S +
+
VGG - VDD
(0-20V) Vds -
+ Vgs(0-10V)
-
(0-30V) TRPS +
(0-30V) TRPS

TABULAR FORM:

Drain Characteristics:

VGS = 0V VGS = 1V VGS = 2V

VDS(V) ID (mA) VDS (V) ID (mA) VDS (V) ID (mA)

Transfer Characteristics:

41
 VDS = 1V VDS = 2V VDS = 3V

VGS (V) ID (mA) VGS (V) ID (mA) VGS (V) ID (mA)

MODEL GRAPHS:

Drain characteristics

Transfer characteristics

PROCEDURE:

42
 1. 1.Connections are made as per the circuit diagram.
2. For different fixed values of VGS by varying the drain to source voltage VDS thevalues of ID are
noted.
3. For these values the drain characteristics of the JFET are obtained.
4. For different fixed values of VDS by varying the gate to source voltage VGS, thevalues of ID are noted.
5. From these values the transfer characteristics of the JFET are obtained.

CALCULATIONS:
1. Drain resistance (rd) = ΔVDS / Δ ID (Ω)
2. Mutual conductance (gm) = Δ ID / Δ VGS
3. Amplification Factor (μ) = rd x gm

PRECAUTIONS:
1. Connections must be made carefully to avoid short circuit.
2. Readings must be taken without parallel ox error.
3. The readings should not exceed the meter range.

RESULT:
1. The Drain and transfer characteristics of a JFET are obtained and the graphs are plotted.
2. The Drain resistance, transconductance and amplification factor are obtained as r d= gm= μ=

VIVA QUESTIONS:
1.What is meant by Field Effect Transistor?
2.What is meant by Uniploar and bipolar?
3.What is the difference between BJT and FET?
4.What are the characteristics of FET?
5. What is Pinch Off Voltage?
6.Why FET is called Voltage controlled Device?
7.Draw Small Signal model of FET.
8.What are the advantages of FET?

43
 EXPERIMENT 10
TRANSISTOR AS A SWITCH

AIM: To verify the switching action of a transistor and to measure the cut off and saturation voltages.

APPARATUS: 1. (0-30) V TRPS ----------------------------2no.s,

2. 100K, 2.2K,100Ω,4.7K resistors ---1no. (each),
3. (0-2) V & (0-20) V Voltmeters -------1no. (each),
4.LED
5. BC 107 transistor------------------------1no.,
6. Bread Board,
7. Connecting wires.

CIRCUIT DIAGRAM:

TABULAR FORM:

VCE(SAT) VCB(SAT) VBE(SAT) VCE(cutoff) VCB(cutoff) VBE(cutoff)

PROCEDURE:
1. Connections are made as per the circuit diagram.Vce(cutoff).
2. Set Vi=0V,Measure VCE,VCB,VBE cutoff voltages.
3. Observe the glow of LED.
4. Set Vi=5v,measure VCE,VCB,VBE Saturation voltages.LED doesn’t glow

PRECAUTIONS:

44
1. Connections must be made carefully to avoid short circuit.
2. Readings must be taken without parallel ox error.
3. The readings should not exceed the meter range.

RESULT: The switching action of a Transistor is verified. And the saturation and cut-off values are noted as
VCE(SAT)= VCB(SAT)= VBE(SAT)=
VCE(CUTOFF)= VCB(CUTOFF)= VBE(CUTOFF)=

Viva Questions:
1. What are the different modes of operation of transistor?
2. When transistor is operated as a switch?
3. What is the value of VBE in saturation mode of operation?
4. What are the saturation and cut-off voltages?
5. Explain the transistor as a Switch circuit operation.

45
 EXPERIMENT 11
IMPLEMENTATION OF LOGIC GATES USING DIODES AND TRANSISTORS

AIM: To verify the truth table for various logic gates using resistors, diodes and transistors.

APPARATUS:
1.Diodes IN4007-2No.
2.Transistor BC107-1no.
3.Resistor 1kΩ-2no.
4.Bread board
5.Connecting wires
6.TRPS.

THEORY:
Circuits used to process digital signals are called logic gates. Gate is a digital circuit with one or more inputs
but only one output. The basic gates are AND, OR ,NOT, NAND, NOR by connecting these gates in
different ways we can build circuits that can perform arithmetic and other functions. The logic gates NAND,
NOR are universal gates.

CIRCUIT DIAGRAMS:

1. AND GATE TRUTH TABLE

A B O/P
0 0 0
0 1 0
1 0 0
1 1 1

46
2. OR GATE TRUTH TABLE

A B O/P
0 0 0
0 1 1
1 0 1
1 1 1

3. NAND GATE TRUTH TABLE

A B O/P
0 0 1
0 1 1
1 0 1
1 1 0

47
4. NOR GATE TRUTH TABLE

A B O/P

0 0 1

0 1 0

1 0 0

1 1 0

5. NOT GATE TRUTH TABLE

+5 V

A O/P
1 K

0 1
+
3
1 K

2
BC 107
1 0
1 V0

+
5V -
-

2 1

NOT

PROCEDURE:
1. Connections are made as per the circuit diagram.
2. Output is taken across the load resistance.
3. Outputs are tabulated and truth table is verified.

48
PRECAUTIONS:
1. Loose and wrong connections should be avoided.
2. Supply should be switched on only after giving all the input connections.
3. Power should be switched off while connecting.

RESULT: The truth table of various logic gates is verified.

VIVA QUESTIONS:
1. What are different types of logic gates?
2. What are universal gates? Why called so?
3. Explain the operation of each gate using resistors and transistors?
4. Explain logic gates using switches?
5. Draw the truth table for Exclusive OR operation.

49
 EXPERIMENT 12
SILICON-CONTROLLED RECTIFIER (SCR) CHARACTERISTICS

AIM: To plot the V-I characteristics of Silicon Controlled Rectifier.

APPARATUS: SCR (TYN616)

Regulated Power Supply (0-30V)
Resistors 10KΩ, 1KΩ -- 1no.(each)
Ammeter (0-50) µA
Voltmeter (0-10V)
Bread board and connecting wires.

CIRCUIT DIAGRAM:

THEORY:
It is a four layer semiconductor device being alternate of P-type and N-type silicon. It consists of 3 junctions
J1, J2, J3 the J1 and J3 operate in forward direction and J2 operates in reverse direction and three terminals
called anode A, cathode K , and a gate G. The operation of SCR can be studied when the gate is open and
when the gate is positive with respect to cathode.

When gate is open, no voltage is applied at the gate due to reverse bias of the junction J2 no current flows
through R2 and hence SCR is at cutt off. When anode voltage is increased J2 tends to breakdown.

50
 When the gate positive,with respect to cathode J3 junction is forward biased and J2 is reverse
biased .Electrons from N-type material move across junction J3 towards gate while holes from P-type material
moves across junction J3 towards cathode. So gate current starts flowing ,anode current increaase is in
extremely small current junction J2 break down and SCR conducts heavily.
When gate is open thee breakover voltage is determined on the minimum forward voltage at which
SCR conducts heavily.Now most of the supply voltage appears across the load resistance.The holfing current
is the maximum anode current gate being open , when break over occurs.

PROCEDURE:
1. Connections are made as per circuit diagram.
2. Keep the gate supply voltage at some constant value
3. Vary the anode to cathode supply voltage and note down the readings of voltmeter and
ammeter. Keep the gate voltage at standard value.
4. A graph is drawn between VAK and IAK.

OBSERVATION:

VAK(V) IAK ( µA)

MODEL WAVEFORM:

51
PRECAUTIONS:
1. Loose and wrong connections should be avoided.
2. Supply should be switched on only after giving all the input connections.
3. Power should be switched off while connecting.

RESULT: The V-I characteristics of SCR were observed and the graph was plotted.

VIVA QUESTIONS:
1. What the symbol of SCR?
2. In which state SCR turns of conducting state to blocking state?
3. What are the applications of SCR?
4. What is holding current?
5. What are the important type’s thyristors?
6. How many numbers of junctions are involved in SCR?
7. What is the function of gate in SCR?
8. When gate is open, what happens when anode voltage is increased?
9. What is the value of forward resistance offered by SCR?
10. What is the condition for making from conducting state to non conducting state?

52
 EXPERIMENT 13
UNIJUNCTION TRANSISTOR(UJT) CHARACTERISTICS

AIM: To obtain the V-I characteristics of UJT and plot its input negative resistance characteristics also to
find its Intrinsic Standoff Ratio

APPARATUS:
Regulated Power Supply (0-30V, 1A) - 2Nos
UJT 2N2646
Resistors 1kΩ, 100Ω
Voltmeter (0-30V) - 1no
Ammeter (0-30mA) -1no.
Breadboard and connecting Wires

THEORY:
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only one
junction. The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and two bases (B1
and B2). The base is formed by lightly doped n-type bar of silicon. Two ohmic contacts B1 and B2
are attached at its ends. The emitter is of p-type and it is heavily doped. The resistance between B1
and B2, when the emitter is open-circuit is called interbase resistance.The original unijunction
transistor, or UJT, is a simple device that is essentially a bar of N type semiconductor material into
which P type material has been diffused somewhere along its length. The 2N2646 is the most
commonly used version of the UJT.

Circuit symbol
The UJT is biased with a positive voltage between the two bases. This causes a potential drop along
the length of the device. When the emitter voltage is driven approximately one diode voltage above
the voltage at the point where the P diffusion (emitter) is, current will begin to flow from the emitter
into the base region. Because the base region is very lightly doped, the additional current (actually
charges in the base region) causes (conductivity modulation) which reduces the resistance of the
portion of the base between the emitter junction and the B2 terminal. This reduction in resistance
means that the emitter junction is more forward biased, and so even more current is injected.
Overall, the effect is a negative resistance at the emitter terminal.

53
 This is what makes the UJT useful, especially in simple oscillator circuits. When the emitter voltage
reaches Vp, the current starts to increase and the emitter voltage starts to decrease. This is
represented by negative slope of the characteristics which is referred to as the negative resistance
region, beyond the valley point ,RB1 reaches minimum value and this region, VEB proportional to
IE.

CIRCUIT DIAGRAM:

VEE(V)

PROCEDURE:

1. Connection is made as per circuit diagram.

2. Output voltage is fixed at a constant level and by varying input voltage corresponding emitter
current values are noted down.
3. This procedure is repeated for different values of output voltages.
4. All the readings are tabulated and Intrinsic Stand-Off ratio is calculated using
η = (Vp-VD) / VBB
5. A graph is plotted between VEE and IE for different values of VBE.

54
MODEL GRAPHS:

OBSEVATIONS:

CALCULAT VBB=1V VBB=2V VBB=3V

IONS:
VEB(V) V IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

η
V
B
B + VD
η = (VP-VD) / VBB
η = ( η1 + η2 + η3 ) / 3

PRECAUTIONS:
1. Loose and wrong connections should be avoided.
2. Supply should be switched on only after giving all the input connections.
3. Power should be switched off while connecting.

55
RESULT: The V-I characteristics of UJT are observed and its input negative resistance characteristics are
plotted. And also its Intrinsic Standoff Ratio is obtained as η= .

VIVA QUESTIONS:

1. What is the symbol of UJT?

2. Draw the equivalent circuit of UJT?
3. What are the applications of UJT?
4. Formula for the intrinsic standoff ratio?
5. What does it indicates the direction of arrow in the UJT?
6. What is the difference between FET and UJT?
7. Is UJT is used an oscillator? Why?
8. What is the Resistance between B 1 and B2 is called as?
9. What is its value of resistance between B 1 and B2?
10. Draw the characteristics of UJT?

56