EXPERIMENT 1

JUNCTION DIODE CHARACTERISTICS

1. Objcctive:
i) To measure the effect of forward and reverse bias on junction diode.
diodes.
ii) To investigate the forward and reverse biased charactertistics of

2. Basic Theory:
A junction diode is a semiconductor element made of p and n type of semiconductor
materials. It conducts current only in one direction. The method of providing a de voltage to
the element (diode, transistor etc.) for its proper operation is called BIASING. If positive
terminal of a dc voltage source is connected to the anode of the diode and negatie teminal
of the source is connected to the cathode then the diode is said to be forv ard biased
otherwise the diode wilil be reverse biased. The diode conducts only when it is forward
biased. A schematic symbol is shown in Figure 1.1-(a), whereas its forward 2nd reverse
biased circuits are shown in Figure 1.1 (b) and (c).
D D
Anode Calhode
D

(a)
V
(b)
Figure 1.l (a) Junction Diode, (b) Forward and (c) Reserve biased

The current flowing through the diode can be controlled by regulating the external
voltage (biasing voltage). Curent in the diode flows in the direction of the arrow head of the
diode. The arrow head terminal of the diode is called ANODE and the second ierminal is
calied CATHODE. The anode is a p-type semiconductor and the cathode is n-type
semiconductor. The current flowing through the forward biased diode is called FORWARD
CURRENT and the curent through the reverse biased diode is called REVERSE CURRENT.
The forward current ranges from 0.2 to 20 A and the reverse current 1S in the range of
microamperes. The forward resistance of the diode is very small, while the reverse resistance
is very high. The forward and reverse diode resistances Re and R are determined as the
ratio
Vo Vo
RE = RR =:
IR
of the volatge drop across the diode to the current flowing
through the diode.
1
 VOLT-AMPERE CHARACTERISTIC:
The volt-ampere characteristic of a diode showvs a relationship between diode current
and the voltage across it. The graph of volt-ampere characteristic for Ge and Si diodes are
given in Figure 1.2 (a). The voltage V,, below which the current is very small or practically
zero is called THRESHOLD or CUTIN o OFFSEI VOLTAGE. Above this voltage, current
rises very rapidly. The threshold voltage for Ge diode is 0.2 to 0.3 volt and for Si diode is 0.6
to 0.7 volt. The diode current must not be increased beyond the maximum current limit
provided by the manufacturer. If the current is increased beyond that limit the diode will be
overheated and it will be destroyed.
I(mA) I(mA)
-Ge diode
Ordinar: Si divde
Si diode

iorward biased

0.30 6 ’V;(V) ).6 V(V)

Reverse biased

(a) (b)
Figure 1.2 Volt-ampere Characteristics of Ge and Si diodes

When the diode is reverse biased only a small current due to the minority carriers
flows in it. This current is called a REVERSE CURRENT and it is practically independent of
the applied reverse voltage. The magnitude of this current will be in microamperes range. In
Figure 1.2(b) the reverse current part is exaggerated for more clear picture. From the graph
it is clear that the reverse current is constant until acertain value of the reverse voltage across
the diode. The reverse saturation current for Ge diode is about 1000times greater than for a
similar Si diode. When the reverse bias voltage reaches certain value the reverse current rises
abruptly. This may also destroy the diode. Therefore, in case of reverse bias the diode must
not be operaled below this limit. The reverse voltage at which the reverse current rises
abruptly is called REVERSE BREAKDOWN VOLTAGE and the phenomena is called
AVALANCHEbreakdown.
In case of zener diode, it works in the breakdown region. Figure l.3 shows the volt
ampere characteristic curve of a zener diode. It is obvious that when a zener diode is forward
biased, it acts as an ordinary diode, whereas in the reverse region. it has only a snall reverse
current upto the breakdown voltage. Beyond the breakdown voltage, called as Zener voltage.
Vz the current increased sharply. Note that the voltage is almost constant, approximately
equal io V,over most of the breakdown region.
 lyue 1,Beahdonnrepion in Veuve

4. Equlpnnent and Components Required:

Small signal Si diode,
Zener diode,
100Q Resistor,
DC source, 0 40 volts.
DC voltmeter,
6. DC millianmeter with 0-0,110 100mA ranges,

5. Procedure:
A) To detenminc the seflectol lonwaxsd mdresersg biusesol aseuicgnduetor diode
| Connect acireuit as shown in Figure 1.4.
A

Figure 14 Circuit for determining eflectof forward andreserse biases of diode

Adjust slowly the voltage of the exiernal voltage source until the nilliammeter reads l00
IA,
i. Record the value shown by the voltmeter and milliammeter in Table I.1.
", Turn the power OFF and then reverse the connection of the diode in the circuit such tha:
thediode will be reverse biased.
5. Nowturn on the power source ON and adjust the value of the source to 20V.
. Record the reading of the anmeter obtained for this voltage in the Table 11.
7. Turn the power OFF.
8. Calulate the forward and reverse resistance of the diode using the experimental data.
Table 1.I
I, (mA) V, (V)

R
Ra

B) To plot the V-l curve of asilicon ordinary and zener diodes

R.

Vs

1. Connect the circuit as shown in Figure 1.5 using a silicon diode.

Figure l.5 Circuit for plotting V-Icurve of Silicon diode

9. Turn the power ON and start to take the reading of the voltmeter and milliammeter for
the values of thevoltage given in the Table 2.2 (a).
0. Turn the power OFF and reverse the connection of the silicon diode so that it will be
reverse biased. Noie do not exceed voltage beyond the reverse breakdown voltuge.
?.Turn the power ON :nd start to take the reading of the millianmmeter for the values of the
voltagesgiven in Table 2.2 (b).
2. After completion turn the power OFF.
23. Connect the circuit as shown in Figure 1.6using a zener diode.
Rs

Figure 1.6 Circuit for plotting V-l curve of Zener diode

4
14. Turn the power (ON and start to take the reading of the voltmeter and milliammeter for
the values of the voltage given in the Table 2.3.
15. Plot the graphs for the experimental values from the Tables 2.2 (a) &tb) and Table 2.3 in
the same graph paper.

Table 2.2 (a)

V, I,(mA)
0.2
0.3
0.45
0.5
0.55
0.6
0.65
0.7

Table 2.2 (b)

V, (V)
1
2

Table 2.3
V, (V) IR (mA)

10
20
40
50
60

6. Conclusion: