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5 260624

The document discusses the operation and characteristics of MOSFETs, including the effects of voltage on charge distribution and the formation of depletion regions. It explains the principles of inversion and the relationship between gate voltage and threshold voltage, as well as the behavior of the channel under different voltage conditions. Additionally, it touches on the importance of doping levels and the impact of these factors on the overall performance of the device.

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Ameen Aazam
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18 views12 pages

5 260624

The document discusses the operation and characteristics of MOSFETs, including the effects of voltage on charge distribution and the formation of depletion regions. It explains the principles of inversion and the relationship between gate voltage and threshold voltage, as well as the behavior of the channel under different voltage conditions. Additionally, it touches on the importance of doping levels and the impact of these factors on the overall performance of the device.

Uploaded by

Ameen Aazam
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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MOSFET 23/06/2024 MOS Gpacitoe —? Quobitotive ‘Anody sis — a a @A Mos copacilor Structure —> Gductoe Traudotor ride) n-type (Gr P-ms) @ Let's think about in teams of Enewy bond dhagsam. Genes Eur Xr Electron Eee! Affinity). eat = cic eb (hr Rinetion) ® PH (Wak Gnetim) is te aeroge enews reqpiced for om electron t be free. @ex why re we Anleinge aba tha) 2X of Lemiconductor ond:nok @ whot if we apphy a ioterttial diff ocrose the Gate? Remember , the indicated lughts uill nok change because & fiondanuntet material properties we dit? Ey alll in brernt ain anil the} ave| nat rent} connected 1s = @® Wis is Quite fost Process as Metal £ n-type both have plenty of caraier @ what it we reverse te polanty I? nytt this region of operation's colled een mutation» UJ @ ww a we opply a -ve voltage. it will repel 4 2's from te che 2 tee we kernele willbe (eRe aut resubtigg in. depletion wgion. @ But why is. ro chayge distribution is atmat flor a¢ compared to the previ aus one? 4 Pevioutly it needed e's. And there were lotr of 2's there which ould |come from te hulle ond result ints thot tind of chat diste| bution 2. Rut, ts time lit needg +ve arte See eee ee a ee eee eee Mosiroum., HVE chops densely! ON, Ae_there ove! nove |aowyier charger i in tne. n-bypes. 8. And once ithe Hensity isles then Wo. than it ollmy exponentiod fouhion od iL choad (this mode of operation. is_coMed. depletion) @ whed if we farther increase the voltage applied ——> Eve ® Look ot the egion, on thu sur fore . Ei>Ee. Te nedure of doping ie inverted. nou) 1 me oto hove eorrier holet. $0 we con think obsut romping them. @ But where dol tre |holer come eam? 4 The Rial doesn’t have hale ox | Hojority. 2, Grand con wk urpply neler! 3, tery to often singe ei oie gis pnt the tngler act gacumuLloted. in fhe surface... UIST RANVIER. @® Wse ore inreeecsee in ThermoA equilib um. which may toke. 0 while. ee Cin tre bulk) @ “Fen whos hoppens dep by step as there is_o, delay when you.cuddenly opphy a. v> 1. Dw tp chee meutodity depletion ae forms_in¢tontly ond. extends upto wheres | needed 2. te the toler get gencorted.. the_depletion agen shrinks. BF you cheek | tre.| apacetanee| ——> Buontitotive Mnodysis-—> Vg = APoy + ant tires | M Omens @ Foe of point x inside the cememduestor —> inside oF oxide, Hronet charge! fea 2 ve ccled 312 is ambonk ee 20) = f ECO = He Xe 24.5 AOdnco a aes FY @ Prd, APox = Cx tox Doy = Ds+—at te turface > Loe Box = € Es > fx = S Hs > Boy = + x, dots teh > Vee Abe = Ta (Fs Lo, | y= tet TAS @® What is defined as inverston ? Téehnicodty Whenever £:>2¢ then only inversion oeetes. Puck a spy SR isdefined tel (Pp - Oe obage= Ep -E Deane she rate 3 The clnfode is| on p-type, ak mebype the bulk ts. Q)_Whad obowt ye lassumptions| tut we've made? {om gener Bm Pe S| tere ison ofbsct val tage ve get thot flotbend , depere}on coping level Se tr BD- D Semiconductor fe PCC| Locttiog wits sp? hybridization. fo on the edge there ote. clarglig. bond with unpowred Cs, which ton eoaily collet —-ve Sa tol 0x Qa. Are on extio.| o. exypivotent volige ts needled to get fp he #atbond. Vie 4 Be Bes @ Duo ol of these correction, tha Vy becomes quite -vondom vouuss, which may difer From a desivedone. So on top of that we do odditionat choge implant (Qi) to adfuat tbe tenesanld. vollnge Veg = Bro Rash Cox Si/eu Varo = Nee tote +1ay @®_ twersion choge is defined 04 whatever chore accumulted after shag, inversion, Qin = Cox Qs—Vea) 0 2 ave here becouse of hese assumption. MOgEe a jah Seam top VS Gp ——> ere ae ae of tra chonnel aca te Gode fotentiot. @® FLET— Feld Effect Fonsistor. lets make a device wig, bis poperty . Vi ul fm fos Sar] Za eres We want truce eontocts be os “tow resistive & possible, Go nt Yo @ How vill the Veg affect ane Frreshold wllage ? Vio = Mey + Ochy +1 Bey Lf SS > thie term teed | is ig Subghrode i Feit age 5 Tigo hog “ts be lodfuated Inversion. Mems we néed. tmore valtoge. to aet ith some levell of doit. (244) on the _dhomie!. $ he oatuor tineshgld. vol tage —> Vy = Meg t 29 + Tse reg Ve Vy +¥ [25 Ne 2 | —* Body Effect @ emir foversion layer a MOSFET ic weodly fost in contrast of MOS Cop. fe it doesn't rely om teat generosion. Inctend they got the chayget dram the ot (Gnle 2 Drei) @® Whad happens if you.lapply Vaqs_tiita no Vag ? Sia Sa @ Whod happens if we have Voc + but wo Ves applied? Vewy less cunent. coe @_whod._if | bolt axe applied 2 a ae ~. ESL L-V Chowocleristie of MOSFET — Vol is very SomU-— Qinv = Cop Misr) > Vin = WLGx CYas—Yr > T= Vi _ WEOxWes-Vr) TT Fim Wy Cis—Vn) HE = Why, as) ME Te bh Gre (dV) Mig One Heaian Cesare gs density is @ It behover Like a Fesistonee with volue depend upon. Vc - ® Why! do we keep thal Gode-txide thin 2 boy, 0 PY Ve Aho + hs S, tho WERENT , tre MARTINIS we riced - The more tsi theldieleetrelamstonit, the llecser Leek lvaltage) Mk SI Veg = Ve When Ye ts not very soll, we con nok ocsume the chowge density te be uniform trea oud the chowmel tis fi es 7 ae If tu chonnel volbage difference in the source = Vos , in te daodn = Veg —Vpg fox omy paint on the charmel, Av = Veg — VOD Dd = WCox Dis YOO Ve] + Ty = AY = W Coy Digg VOY] pen EGE, = poo lon 2 [Moe Moe 2 Ty = WOxrn[Yye—Ved—VAl ay are) L (Ty dus Wtf [Vg.—-V0O Vr d Vex) ° 6 Assumption : | dey = Wily [vis-VOod Vy] du Cy we assumed this Vy 0d eorttomt ond. doesn’t depend up Vx) or %. But the tmeshold voltage is dependent on VOD Yat ad we ow Ix Kody Offect. Lo, neor te Dinin will be move thon that of Gote side. for aetuot it shod be, Sin = Wax Yas - VCO VCO] doe Pin ron. Weis @ whod if Vee =Vee—Ve ? => Strong inversion ceotes ot the end of the ehonne! Nas Vegas “Vr @ Beyond thot Vag>Vas—Vr),, the. ehonnel gets pinched. off in between Tait ae Zu My Cones in Depletion Rea @ Te snetgy digg looks like. — Chonnel Voltage = Vas- Vr SLY — genoa E ' ti H AMS =. lee at @ Lo be hmneti (ust lek Like the transistor in triode rein with ——> L=Leg Vag= Veg Vz CRction of Pinch aff, Vas-YOO-Vr =O] a a, = Mtl (we) ee ae ay Quadratic dependence with Veg. @ sau ob Nog, bee b Zt. (vac) SE Cege= L-4] ae We treat it oA contont @® And if we wonna approximate» Legewl . ten we need a modification of the I-V ehoroaterisbe —> T= Pee a tvs Cl4AVnd) —Pineh off veaion . @® If yor wanna remove the dicemntinuty bly te triode £ pinch 0 agen eqs , you com. modify te prev. ona —> a > | — eee [.(vgs—Vet) Vole— dye] G+Avod) Tyiode i Chamel Chore > 4, = Nlox GasVOO-V dx | d= Lee >» Bn = ar (Deg VG] da ° ‘ ane ls > Oy = ee Tia vex) a= agen (Yes ~e) 2 84s WLC x CVs) HaGeWl Fy voo—K]dVGd @ fFective copocitonce of te Gote— Qe

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