hyits

em)-concductor

Energy Bards
forbicdden Conduction
Valence band
Band eneg
band
electoom are s arey
here are Valence No electavm
Cre found found
e

èrlher emp o
moy
be partially or complele portially ¥ rth
Compleel |le coth|emp e
e
eio his bond
>ein his band cle Contibue to clectic

not coibuke to
Cument
elechic cuient which
there are e
e of
here are ae obteined o n btakip
oudumost orbit of the covglet kond.
atom
kond con be
Tbis band can b4his
never be emp emP

Forbidden enersy 9ap (Eg) fum

or shiting e
>The min enerny qui
C is known as band gap.
UR to

Eg fc-Ev

cB

VB
 Iype of solids
c ol, d: n
COn the batis of boned chuchure
divided in thee codeqie
isrductur 1tulatrc
Proper Concducto
1.able(1o)
modesote (16)
4 Conductiui Ve high (10 7)
modesode(151 r) ve (166
a. Resshuhy Ie (1o')

3 Band
suchure
com1ed
VEd

4 Eney gap Ze
E9 1IeV Ge

Curent Due to fee e Due to fcre e 4

5
CarIefs
hole
filed 4

6A+ Orcinar VB 4CB are Compleryce s

filled VB is Semeuwhat er ce er f
Aemp
irsulot
Rehaviour at Super concluctog ingulote
Ok
ve
Temp. Coef. of ve

resiglan ce
Au,etc
efHc Si, Ge, Ga,
Cu, Aq, Au, Na,
EKamplen
 pes of Semiconducto

Ertintic (1nt4 doping)

tinsic (pue)

nype
pype
Bismulh Borcn
Alumiium
Assenic
Amhmony lim
phosphotu Tndium

trinsic Erinsic
P u r e Si os Ge Pure Si os Get impur y

Conductioity is Conduchoity is high

N

no. of Aee e in cB is nene thh

hole in UB
equa no. of
ne n) practically uged
not used practically han igbinsic
is moie

E g is ery Smal
Eg
shift
leve I this fejmi lee
n this fermi enegy
C8.
in he middle
of toword U8 o
li
08CB
 Itnsic SemicUncductos

ha)
fach i atom Aol(
fve SI tom toma ccvale
am
bond ilh neyhbouri
as
f a c h si crtom behave
H ha e

A TO0memp
moves fo c8
ebrcoke the bonc become -kte hole,
called o
h e vactantg creotd by r e el is
Ahis procen callec elecon-hole pair qeneiaT 0
fov evC 10 Si aom 1 e-h poir is gene rade d
A t h e same home,)ehole recombination oCCur

Vg

n = no. of hole> io 0ß
ho. of sre e CR
Jpe s e n i conduclox
when ivalent impurrly is added to
semi cs
insic semi, hen ppe
Ho me
Sili(on
>Boio qtom has 3 valen (e ef
ha
boron
h e thvee valen (ee,of
forms covalendbond th 3
( neihbourina si aloms.

Jouth covalent bønd is incomplet

I electen.
with shorlage of

called a hole
issi of e is
he bole-
S o ecch boron alom accppt one e o il
impurhe.
impurithio are caled acceptor
So al -tivalent
is eleckicolly eual.
semicancluctor
>ptype

holeo majorit

CB e
miDorIy

fem
eve
Mh he

A
A
 Extoinsic Semiconc)uctor

when peto vale7 impur

S imoinsic Sem then
added o an

gemi is tomed
pe
vglene e ond
phosphorus ha
Si has4
- -> The 4 Ualence el of each phoph0us
bondo ith
Crtom orm 4 covalent
4 neiyhbuti Si atom
ih phosphoou e i e doe not
mathon ot
invclve i o 4he tos
konds, hen te it i
kre
coualeot

m0

atom conate 1 ¢tre elechon.

S o , each phDsphoru
are callecdonor inmpurity
Therctort.penta valent impurihe
semicomducto 1s heutal
Hutal electric charge of npe

j o CaierTI

Ec fermi
et holes )inoriy caies

heh
D elechons.
net curent is mainly u e
2
De h = D;

MeN
 P- junchon liocle

When o pype Sem is byoy in cogtact oth ntype

is collee p-n j" diode.
Semi, tsulting aongement
No

P
+

OT K n e e
Rare
PoeTha VoHage

ele pletion
yes

of hole
is h anufactured con teyathion
When pn iun" ciode
is mox ot left and right sicde rep. e
e Tight f
conc. holt diffuse touwar
Due to non-uniHovm a
i4fusion

left constitue a curent called

ciffuetoward
Current ore crcateo
hole» e el.+ve 4 - ve ion
recomlbinahon of of intanal
Due fo Current because
liffution
ohich oppoJe
at junchion
electic fheld is Coled
COTTeS n gion AB,o i t
A there gre m0 charge
as deplehon tayun
of curre
curret is same
same as ha
citction
irtction of
urent->
elechon o m pt N
of hole oppoite to

Symbol
 Biaging of pn juo diode

O fovuwarcd Bias1n
forworc voHaqe is fo produre Tmo
ee e i0 n-type hole 1 pype
h

e holes sush oeards Hhe junchon

an recombine
of holes and reead e lecton
re combinahion
Constitute foruoard cUTet
Widh of deplehon layer decre asen

Rever1e Kiaing9
Major charqe cariens move
auay
fcom 4he juncton
smal cument flows due toCombnahon
hey c o n t k
of inorit chare carsrca
curnnto
a small Cyient called leakage
severse CUneT
intrese
WicHh of depletion ayer
Gcelo-3) il
r e o ko o w n

UoH a g e
Silo7)

NT
 RecthfierL
cdevice ohich convers acfo pulsathng dc
s a

Half Wove Rectifier

o
RL
23oV

soH-
D-0N OFF ON

P transfovmer ancd
Cnc
ceiPePa) of
s applitd at pmoy
input (AL)
is taken acmss lodd resistance uret
output foruoar ia ed
(s) gets
1 0 +ve
cycle, diode
half

f louy thxyh ciode. devene biage, i does not conducd

diode (a) gets
in ve holf cyde
Full wave Rech fie
@Cenypbe- 1eippe Brid
P
P

RL
920V MM
SoH 4
AC

D1

OFF oN
D ON
oN OfF
O, ON
OF F
ON
Da4D4OE
ON
 pulo livde

peei pupoge pn jun dode fobriratrd

0ih onpa iclo Jo allu lih
o fall on Ihe iode
ias
ii operqed unor ever3e
he) enevs 0f is (hu) 1 rrader iho
he due o
eh pairs qeneratd
aMctntior of photons

agniude o (uuto depends o imlentiofg7

Symbol
B

Applicorhon ute o deke optico siqnals.

Solar cell open ckt vta

VoC V
Sur fa

s
P
short cki
Curent
aclk
Conda ct

orea is
kept much larger
bias applied4.junction
-No erd is
 Zener iode
is Usec as voltage requlator
everse blas in breakdown reon
A aluoays operated under

heauly clope pn junchion oliode o1 he

ue o his deplehon region is very hio f el ectic -field

un is entemel hxh

Symbol-> tmA

mOjo
orty

mi0T

i(A)

hole tom
minor carier
Cariers -
curremflous dye to minor
Reve tse
4 eaom p-n.
nP when V=V2 then the
bias is increagec
Ahea As e erse
valence eleceng. + ~
to pul
electic ielc sengh is hixh enouh at the brea kdouwn
bYcak
a c c o u n f o r hih
curre
hepe walence e
a
regulatov
Ooltaqe gulato
a)
Zener cliode
=iLtiz
to kCL
acc.
N VztIRs
acc to kVL
M V =V a + i t i ) R

Vs
Vot ( u t )P
V- |V,
increase
either IL o iz
hen Then
i ncre aye IConst
s
(i-ifV;
ae onsta
ase As Yo & PL
2 i nc C a J e n .
constartirspechve

semoins
VeHaqe
Anc op N
of chaqe in
 iocle Pro blems

Forware 8iayec mode

is than uoHaae at
When vo ltage
vo tage at Cnoe side more

ccthocde Sicfe heg diocle is in fB moce

e9 moce

RB

-\ -0S

R t5V

2V SV
L
K

K R
mtlov
 qui c?eu of iode
cliode is forar biasce ( u maxX)So repla
cliode by short cueuf

oliocde is biagee ) 1eslstance is max ) So eplare

diode by eper cifuit

(O.C

find cuent

M 0

3V
-As AV TB mode

k
J
3N
M-
4-(-6)
A
B oode
VA V
-V
-IV

-I-(-3)A
D i
t0A

OV

OV o A
-tA
Vk
replo ac o signa actos PL will be

-SV

i-9 2kA
M

20V

2k

+2o

A
 ansistor
3 mina device
evice
S 3 Tgon, 2unction

Type
php
npn
_Collectoy

base

Base ve
thin 4 ighHy doped cae)
cartiens

doped (major
moderate Gihe , heaui
charge )
Emitr>
(collect
the
moderate dpmg
Jarge s ine,
Colecr
Condiguiq ion

CC
cl
ilp
ilp
olp tuning cicuit

Ampitie
Applicahon- buffer

(ut PT
ain
 Adion of rasirlo

fo acwale 1-keuios

ndder Colleed
Kevease

Vec
N
VcReveaje
FoJuOar
the
emitler em
ct cmitHer side,
Due to oarc biasi
elechon collecto i a bast
Uia has
go io base
he emitled elecpo 0ih
electony m emiHes, Tecombine
the colectss.
Collects.
Some of
elechonm
are cof
ar collecHed
lecded bby bae remaíni
CInc remaiins n hole in
ith
ecombíne
5 elecbon,
Genera
genera
eryter ito
colectd

electoon
9
i e i icj
Tc
CB
e

Cyiret gqin
BCE
 Trons istor Charac1ciches

(AVE
(Ve

i n p u t c h a r a c t e n r t e t
when VtECondt

Vs
Vs Vee
h oof
f
a graph
i

Vee
0.1
Vg
0.7 A

when Ig= cont

characteisthes

Output Te V
Vs Vce
Nte
of
ua
graph
Cut-off
S a t u qDon

when g
MA
Achve (Acthve gion

(3Sqturqton gi0
Vee
T = ( e n s a r

(ut-off
 rqns istor a a swifch
aCC o kVL

-V¢ :0
Vce - Re
VcE
e MM VeeVec -I Re

(2IR moy mor Vee:0

input output
Vcc

ransistor as a amplitier

the shenyth
shtnyth of
of aa igna
1gna
incrtase

deuice use d o
>IH i a

Ap

Vo-Ic Ru

o Vo -PGP

Vc
VgB Vo
when V;=0, Vo ax
beccuse mu/tplieel by
Case)
V mA,
when V
CaeCi)