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Semiconductor Notes

Physics notes class 12

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17 views14 pages

Semiconductor Notes

Physics notes class 12

Uploaded by

monish.d.v
Copyright
© © All Rights Reserved
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jmrtensic—Serniconckchoe Whe wo. denen free = 90-—Aensing OF Noles ancy {nrrensic_ Charge. cavvied Nes nha ni Cancenration v lenevay Band Diagram for Intrendc Lonfcand, a —— Ec. re, 3 of oh yctoe the | no Pe rype leat acceptor Teri gemicoode fn f Jot lextvo. 27 t8-.wearey Jewates 2 bole athacted by donor lean easily Filled bye. y | si- Si -covatent tna Y we very SOOM en, ss © in me type || Teopurit we 0 -o1e © A ves smoot enangy” a [Rs.req..to Pree the-© Oe ff a 0.01eN - 0-05€V ig | toner impurity y pohen He ee, ler ig Freed they will OEM PY by os , od ce rove; [tne toewest possible enexgy mee 10 tn, ole - os | revel in. Ec. hi « Hence the acceptor © | The_energy tevel Ea _Caonor Jeneegy level) ties below — | the _coodtuction and _ | vatence ood tnig_smatt fe Ak veone terop Peanye- J oP Voters —band age enexgy FAL tes above = © | At_voorm temp, ; eee gop—is—easily———} | eonverted by Hex ____jexcited_to_thes2 acces, as lexcitede= 12 + fener Sviet teasing (cand _has_| behind —equot—no. — |noove et than __heles_io. poles _f0 Ev, These holes Ht Valence loos, oS —Hnexy— bove |can__atlloco—_-he Fo, ea —_ ce otitouted__berh_loy taeemod fo —e= ita tion and door cenpuscite 2 Thus_the Ev has rare _ |. hoes Hnan_e- fo Ee. I: 1 ~ i |_| "A > Ne i : ae 0 P-N_sunction diode - Sk fs a single os Of _Germaniun | silicon doped in_ |Sudb_on._T_mamex lat __one nowt _portian —_act_as__ P=type —_armdcl__cinother pal€ ack ast Hy pe--_———— Fy . \ q ' gancBKoo— x 7s Wr_bounday | ptype —et_n-type.. . A _p-kype—I_n-type_ si caystall CON_be_obt, “padding Suitable acceptor _/ donor ‘nop gi_mmelt_cohite qnwing a ougion ) Wronsriesion bho ined ty Roto a ~enystOUL.. These cuystatln 2 cat _uintto Shin stiets. Coited wabfers. | So_Semni= conductor _ -unices are oa erode _ 6 woofers ——__ unbiased _p-0_ junctions. Pe N AOQOWs'e Oa { peepee = 6 | Paes * = tS Donor } _— OTe t OOo '' 6 a@ holes es 10/0, . a | 19.9.8) 116 © @ | ! \ : a ex Ls cette natto: ¢ __-2 when pant junction ts foaned_, pasicte hos bigness —_ rata of _nolkes_and__N-side bas _thighex cont. of e7 Conc._.gradient_holes_ond_e* —begins to diffuse ___ From PN __and_N=> p . || diffuse they leave —bebied fons tabich 1.e_as_hole diffuse From P-2N they ind_-ve__acceptoc__ions____ ——}tohi.co_set_=Up__-ve_chorge layer _on_p- side _of _xegjion. 2 pond_wice versa, This set _up_om fe near the, choo From N= p side _, any holes _neax_the : Te is pushed to Pside Similarly any cond > | Symbolic Representation « Cp- junction) _||p=stole md_=ve terminal to__n-side le" near the junchoo 1s pusired FO Nesicty i CON riers Ove eee jeeasecanatey No. charge [Small vegion Jin a junction re Lvegion Ts videinity of the Juncion ehicn i. ldteptetect of Ree chowge carrier nas Coby a i loos canned depletion xegion - =the Accurutahon of -ve- Cerge aan PeRion - J *Ve Gn pregtoo Ser Up o POreOHOL vorviey Hacvoss the juncion. This acts os }catledt as barrier potentiot (Vb). /Onty e7 owing Abe _ energy eV 8 —esill_be_atie 4, |ccoss the borrier and difFusioe takes place _ Thexetore the diffusion oP __mnojodty —naxge Coreg, laccoss the _junchon ives. _xise to PIER Caran, |Rom e>N Side calted diffussion Current. the sma OO bowvier Ong Ht I. | N - Anode rrnno Caknede when ann ext..P.dcan be appli ed to the pn —| : el | junction in tuo uses T) Forwoxd biased Chowack erStics.. tReet Hanes stent ee ! Foxvdexrct 8) sed Chewackersies = 2 IHexe +ve terminal 6¢ Bottery Connected to | Ve_as__a_resuit he | ‘ = yopposes—tne Va_as. th effeckive VB decreases, U7 ig NerN- energy bawier acres the junction “pre meogoxikey_chang, e_Coxvier begins to Row toxords — \ \ junctioo-— Ine Ai Sion _Of_e- 4 holes_in_depleon layer y_its jit hence —ePFechive_vessishante cress junesicn jwren—Y exceeds _V8_the majority choxqe—coxccier | gpovts—Ploding —oncess_unctioe and_ aoe = ex [padad 25 foricond Ciscrente. j.€ = Cuscrent Twi OSS aSe— eS he N var \\AAMAN PY on LV \\\\\ ~—-|HOaS_cauned depierion regio? —Laceass the juncion Tis — ack *—Onvy _e7_noving- a e” . . near Me jun chon is pushed a ee ers Oe EEE Ig the__smalt Con sequan AY —-PO— charge cor woni.on_is__ - | Seno vegion dina junction se [xegion_ ts _vidcinity of tne Jerre —_||lepleted_of fee choxge Carxciex PO? OOLY “HOM OBIIg. ve cnarge iP Vegion orenhod corvrier —_ boxvier and The _Accurnutaron—oF ger up oP os en Wb). NB will be—odle_to #Ve_Un__nvegto Caled as barrier _potentiot _ abe energy =the oxrier — and (ALFFusioe- tolees place TT lexos Thexerore_tne dius laccoss the — junchion —ives— » called difeussion Ouxent——___ Rom Pn Side co oP reo}, oviky Charge —Coereier__ _yige to_elec. Curnrne a 1yrobolic Representation Cp=n juncki > 2. nL - anode FO posonene > llworking—o& P-N_sucKon= when a ext. B.D can_ be applied _to_the pen ——__| Junction in _tuo0_vosy, —_||99 Foxwexd biased. | 1iReverse _brasect cha. eh . Eoxudaxcl Binsed heaters IHexe sve terminal s¢ Battery Connected bo. P-sickk _qnd_-ve terminal to n-side cs ee ape ePterkiva Ne _ctensenses— i ee mes 4 | \\\\\ | 8 [ i | J = | 3 f - - = © jwohen She -ve- £erminol da __conrectad. top. Sia, land une t+ve terminal (Gn _connecad te iesigy o |The appliad vol _@9 VB orn dP. Some direction, las a _ssputt tt VB_dino2cses— Promo Vet Veqy ; 7 a oo | hance typos OLrOSS_ GUND —Anetases i oO : @ | Tha_moagority chong COaniLAA NONE — ODO — frog |, U i ido _of _Aplabon to I guedien. ond _iner92ag2e4—09l. i I _aaista.nce 6) 2-N_ junction died —bernenss : rong done Rufpreme_cunsanh POUR SCI88 ja = fe my cnenge smo _ o_O discde _tneough_Rhecstasd @_bokrery, _is__connecred. go brat the voltage applied _todi ode canbe — epanged — The _roA_measuxe_the_curcent Florsing throug tne — — _| diode , Wibexease tine _Voikmeter_meosuxe—voll ee — acess Ype_diode... [pox tne Aife_value of volte.ge the Value of —Cuscren js_noted— J Great swogion | oererse > eatares. of the graph: [come tuo diode 1» Awerset biased, he averse | biased _vo lrage-producas_a_very Smal curen of aby, ‘tess _mA_wohich almost renaies -¥. | Soe —get—Ppusiniing_pulsating De Voltage across er. — since the _Cukput voltage across Ri i S_ebrained Por both —Gutl_and_bale cycte of Ac. This process is. Lcalled Full_woowe_reckiFication and this arrangement lig Cotled Rill cooue ) NUMERICALS = 14-6) nate woy ve vechFication ony one shone \Ts_ebloiusd per cycte of Phe Sees Thess fore, oukpuue Frequincy of soe ALCHFien Gy lesa, [XD Gnpuk ferquancy (50423 dn fut Loose, DtchiFication we get 2 supple per cycle of thy foster oukpuk Frequency of tuts on. eck Fae 4 quot to_2% Input. Frequancy = |

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