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KTU B.Tech S3 SSD questions and answers
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0% found this document useful (0 votes)
32 views14 pagesSSD Questions and Answers
KTU B.Tech S3 SSD questions and answers
Uploaded by
mineminecraft365Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF or read online on Scribd
/ 14
Va) Derive He expression nepo =ni> Com Cundamental,
Jatainsi€ Cone. concerloabies
The rumbev of elettrvom: Gaijin the conduction band ts equal do
He Humber oF holes CPi) im He valence bane. Ther ‘fer an
In byncre Semiconductors
We = Pe
Law -of macs Actions For ahy se ot dermal equilib ram te product
ef fle electron cone. CH) and hele concen (Pp) iS Constant ane
i depends only Ob Temperature _ Th —+5 kro
npr
We an exkringic Cdoped) SC Me eQuilinium elechren Cont: ts
veprwsented by no qua He equilibrium hele Conc - by po-
Even with doping , te mass action lax holds so;
ho. Pg =n
3
b) A Germanium sample 1s doped with td? boron atoms per cms
Inboinsie Canaiey concentrcilion Of Sermoniam Sen?
fy WS wFen
ab poole Fine & Conc.
Given ie 5 NO-Po=He
Nato” cm ,
ho. aid? = Cas x10!) *
1
ngs 2-Sx10?
moe Casxi3)* «
Ee. Blasx ie
fo onn a s
ro
e to
= G2sxio en? c) An whype silleon Sample with Md- trem? Is Sleadily
Imlurieales Such thol gop = O° EHAim® see if Tp
Tre Te =lKs fox tus excitation, draw ehengy bans dlasran
With the quass ~ Fermi levels ak soole . lndvingic Canvey
cone. of silicon ts PS KIS CH
= Cle sxto)® sxe
mr ——— - 2-25 10
we lol®
Jie gehecks sale gop
ts tra hunter oP eletkron hole paint 7@rmaes
Por
unk Volare por secons, Which Ww EHPicK >
Tle Vecombinabfen vale cs defermrred by be canrier liPe kine
Th ana Te both giver as TMS > w®
pe?
Ne Za) Explain He temporature dependence oP canriey concenbation of an
exbinsie Semicondutloy with te help of graph.
si doped ontype wlth a
| \abinsee donoy cencontration Nad of
to
tober? AL ver low TF Clonge 1/1)
et extrin sre neg Ligble mmininere MPs exist
te 1 lonizalion ay eteclrons art bound ‘to tHe
wo atoms
ia 4 6 Ewe
~ AL about wok ClooofT= wall He
tooolt (rey ht
doroy aloms ave fonize? = fonrzatron
evegion
No & Ala ~ lF cre
then every Available ex}ringie.
band
transfered le ‘Hhe Cott! conduction
Clectron has been
conctond untt until the no -becomes ‘Comparable
No
Ko ts virtually
fo be ONE
dominake
Ak higher hemp weoNa Gna he mbinsrc canntens
bp). Wohat ts Hall ef Ret -Dentve He Expression for Finding He canvie
Conc. C4 Semicondutlor Rom Hail voltage
Half effect
ae
+ If a Current caning Conductor ft plated dn a fransverte maghehe Feld
an Emr is developed on He edge Of fhe Condinttor Hall effect
+ Magnitase depends on the densi of Plus 2 Consider 0 — Lye Semiconductor ber of fenstt ' yt
|
,-
>
L jwidth w and fhiekness b.
«An Eleclrre Field Cx ts qppued in db 7% direction
nt
and a magnetic Field Be m Me 2 airertion
-Heles Mover Ww fle x amection VeSulhing t \ fo
t.
in cunven Ta
= Since te magnetre. fleld ts applied perpendicular to the
Bivectron ih whch holes ditt vin the p-byPe bar, fe path
ol whe holes fends to be deflected
+ Using Me Vetlor notation , te belal fence on a Single hole
duc fo fe electere and magnetre Gields 15
F-q (€4+vx @)°
To maintain a Steady stale Plow of holes dows ste length of
tie bar , the elethie Cell Ey musk just balance tHe product.
Voc Be Se Prat bt met force th De devection 9 Vere
ie Fy> @ (€y-vx Be) =o
Hews fire By = Va Be
eSlablrshren of Me elethie Field Sy is koe aa be
Hatt eFPeck.
The sesulling
voltage Van EyW 4s called te Mall velhage 3a) Whal ss Einslem Relation 7 Derive He Exprescron
Relales tee
Since elechrons dosfl rn a dtrechron opposite
fo the ffeld , He polenbyal erers4 fon elechoon:
incyeases in be direction af te Creld.
Tle Cleckostahre polentral Vim) varies th the
opposite. dirvectron, since if rs dePinea ih len ims.
of ave charges.
Vix) = FOO
é-4)
whee Boy - electron polental Chergg
Eteckoie Getd is Eox) ® dvoy
tx
Choosing Fi as @ craferenee Por fe electwasiatic golenkior, He lettre
(veld con be written as
; aa Fs qe
E(x) = - dvoy 2 [&] = o .
cz dx (C# a
AL equilibrian pe net Canvent Flows IK Semiconducter
+ Any Fluckuatton which causes a UiPRusten convent alto Seb up
an clectrte Creld which vedistribules Camvieys by derfh.
the balance of dwift and diffusion is mainbeines by build
Rfels. accompanied by grediony tm BY
Ak equilibrium — Jpead 0
4 Mp PC*? Etoo ~ 4, 00° sree
E De _t dP _ Dp ae _ dé,
—_— se) - iw
Elm) =
\
Bp boa te hp kr
Tle arelobionship detbetveen dvPfusion coeffiren one prob lies
AE eguilibvien dip =o
™
equ GD yeduer be te (Eee » 1 dE.)
m=)
Dp On = kT
— = a ~ Einslern velelres.
iStribabion Githiw
) Draw the Charge density and etectvic Pretd d
von of @ PN junchion tith NL ena:
He Laansibion svegi
Label all Fhe debedts.
xc)
i
Nd
% @4 > G@ Ax ond
&)
=x po
e (Chavge }
cana. [sonst |
Q_ = -4 Amp, ue
Etetkwe Geld dittsthadio
bation 5) Devive Weel diode equation
Approx: mahion>
tL. Diede fs a long diode , he >> Pe,
2. The Dom Junction 15 Abrupt
a. Tle conlatls at te tee ends are Shente
he depletion 96 lon.
4. No Jehewatie: oF mecembinre tion wltlis
tre Coroad bias,
S. low level tyjoction conaittor fr constderes fer
We hae Y= kr og. Po
% Pr
% 40] 57
wre —o reap _ Bbewelier
oe -
When bias Is applied fi
Flom Re 7 . Pvelier SY lier
regres * BC -
(ans)
Pp = PCR)
=) 2% Ot
© 1p. = pvire
PW leans
? Od OMELET
-
ee =i
Fecess hoe concerbotion gp, ot hte edge ef bransikion
VeGion is
Dore Plxay-t —@
Ov kt
= Pare
Pr Arabs Co _) -@
Wh G, egeess EF on p Side
one = rp eM — ©
Ue hve Spay= ap. ae _@
So TeCmw) = Sp. er lee -o
bat APn a ce)
So @ > Splam) = pe Carlet _ yy *rler
@ Spey = dene? _@
fn Gx) = Sup. rl? ©
$6) FonFewerd bras y bane diagram of a Mos capacitor fm
F-b) Bara Peaw He erers
accumulation and mm investor Comal Hon.
Inversion
Accumulation
sciences
<
©
ep
bees —— Eip
av
- EFp
Nee
mie *
Sires weale steeng faved:
plicelnies Tetaetin sheng Inet
E ney ' 5
} _ Kc veptet
1 Uhen Va large 2. AS Na become less negabive
Cd increases » Ci and Cd Comes ih series
Total capacitance :
1O + CdiCE OM clive copacilance decrease,
Cd ter
3B. n
bhen Vase (equilibriun
we obtai
MS Plot bend Vollages, Berod this depletion veg/on
Widbh Thevcases.
cd a So CA deeneasey ,Ihur C decreases
Until Gnally Inversion 1s weatled ab VT
4. When VB aro cd decreases, thveshold 15 aHathed
5. Afler inversion Codepends om tle thpat Freaienty of Phe gate
Sowvee vollase.
).0) wheal ane fle mechanisms which Canute bare Current ha
bran sisler?
1. Charge canaiew Injection + Elechons (NPA on holes (PNP) injecled
inte He base (rom te emitley meee veplacerent duc te
vecombination, creaking base Canver.
Some Carrvits recombine ix tle bate,
2. Recombination tm Base \
fo veplenish there cannrerd,
mequixing a Steady base current
F- Minority Carrion Diffusion t ln PNP bvantister, holer moving fe tee
collector alse need bate Cunrent for minority canriex vecombinahon
tyidth Modulation (Eoaly Effect)! Migh collethor -ease wollage
frcweating base Curyent,
4. Bare
eedutes hate width , Slightly
There! Henevalten > Heol qenewakes extra Carvieys, Tals ing bate
carvent Slightly , espectally im high pouey application. b) Onvats aistvibubton in PNP bransisloy éeevins I
Ho mwinon'ly canzien
AChWwe mode.
ache mode
C). Explain the ampliicahion action of a transisley
ansisley «
1 Canrent Injection
es : /
ceshen a Simoll inet Cunent Plow! Plough tLe bate ~Crnitiry junchen
Clormond laasesd, 7E ingeths Chavge Carviers into He ate:
Sle an NPN Enarsitioy Clectrenw Crem te emiley Ane ingectes
jnte fle base where only a Simalll porkion nrecombine due fo le
bases harvow width dina Light doping:
2. Controlled Oubpat
collettey- bate Junchren
+The svemaining electrons veath the
sColtettoy due to be eleche
Cooverse biased) ane ave Swept Into ‘He
field, wresulking In a lavgew collettey Current.
The rrabts of collecto~ Current Cl te base carvend CEA) dofiner
by be Current gan B waking We BIT A conver controlled dewen.
3. Ap Ampiificaion Mechanttm
—e—eerre
a Tle emilley Current (PE) Consist sof feo compohents : elethrons injec
ecleg
Crom He emitler fo baie and holes dnyected Prom fe base to
Crritler + Th majovity of FE Flows Into ble collector
Ure as LO allowing
base re
cunment TB fo contol 4 larger collector Cunsenb
ve sulbin es
9TH Cunvent ameplification. AmpliGcabion re Cum dg mentay
| be Bs
Operon sn applicebions eAuliny Sisral ampicPreokron
whee a Small mpuk ab He base vesulhls in 9 l@rge Cubpat
ak te collector due fe te bases Ghirty to controt the
emitter fo collellor Curent Plow.
d). hak 1s base teidth modulation
The base region 1s Weghtly doped ;the depletron + 7eg10h eh
Fle rveventa ~biased coltectoy juntteler com extend sig ribicontly
Tafo the n-tyPe base wegion:
\ As We collector vollage 15 tnercatea, Fre Space charge layer
fakes ue move of the metallurgical width of the bate bb.
ana as a vesaik fe effectwe base width tyb 7s decrease!
Thes effect ts called Base norrenind , Boje width rmedulabion, |
or Fook efPoe
do). Explam the outpuk choracternisties of MOSFET
| je Ohmic_oy Trlode region
when Vos < (Vas-VrH) te MOSFET operates in fle byiede
evegion wwhere pracy as 4 variable wesisley - Hert, Eg imcneases
Vinearly with Vps duc bo aa tninkervuphed Channel sty ts
region, the MOSFET follows Ohm's law behavior
2. Saturation Regron
parse
| swhen Vee = Cvas—vri) He Channel becomes Pinched off new
| He mosrer enters tHe Satwraltor region - In thes